Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes

Current-voltage and capacitance-voltage characteristics of Sn/p-Si Schottky diodes measured in the temperature range 80-320 K are presented and analysed. Anomalous strong temperature dependencies of the ideality factor and apparent barrier height were obtained. There was also a considerable difference between the apparent barrier heights obtained from current-voltage and capacitance-voltage characteristics. These anomalies are explained by the domination of the current by a high level of thermionic-field emission, and by the presence of deep levels near the Sn/Si interface, which yield a reduction of free hole concentration and a significant temperature dependence of the charge stored near the metal-semiconductor (MS) interface. The evaluation of temperature dependence of forward current for thermionic-field emission resulted in the following parameters: characteristic energy E₀₀ = 9.8 meV, Schottky barrier height at zero bias Φ_b0 = 0.802 eV, bias coefficient of barrier height β = 0, and effective Richardson constant A* = 37.32 A cm⁻² K⁻².     

Improved electrical and interfacial properties of RF-sputtered HfAlOx on n-GaAs with effective Si passivation

In this paper, we present the effects of ultrathin Si interfacial layer on the physical and electrical properties of GaAs MOS capacitors fabricated using RF-sputtered HfAlO_x gate dielectric. It is found that HfAlO_x/Si/n-GaAs stack exhibits excellent electrical properties with low frequency dispersion (∼4.8%), hysteresis voltage (0.27 V) and interface trap density (1.3 × 10¹² eV⁻¹ cm⁻²). The current density of 3.7 × 10⁻⁵ A/cm² is achieved with an equivalent-oxide-thickness of 1.8 nm at V_FB + 1 V for Si-passivated HfAlO_x films on n-GaAs. X-ray photoelectron spectroscopy (XPS) analysis shows that the suppression of low-k interfacial layer formation is accomplished with the introduction of ultrathin Si interface control layer (ICL). Thus the introduction of thin layer of Si between HfAlO_x dielectrics and GaAs substrate is an effective way to improve the interface quality such as low frequency dispersion, hysteresis voltage and leakage current. Additionally, current conduction mechanism has been studied and the dominant conduction mechanisms are found to be Schottky emission at low to medium electric fields and Poole-Frenkel at high fields and high temperatures under substrate injection. In case of gate injection, the main current conduction at low field is found to be the Schottky emission at high temperatures.     

Current–voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes

The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current–voltage (I−V) measurements in the temperature range 140–300 K. The I–V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) (Φ_B) increases with the increasing temperature. The I–V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal–semiconductor interface. The zero-bias barrier height Φ_B vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of Φ_B=0.615 eV and standard deviation σ_s0=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm⁻² K⁻² and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm⁻² K⁻². This may be due to greater inhomogeneities at the interface.     

Analysis of the current-transport mechanism across a CVD diamond/silicon interface

This work presents a study on the mechanism of injection and charge transport through a CVD diamond/n⁺-Si interface. The current-voltage-temperature characteristics of CVD diamond/silicon heterojunctions measured in the temperature range 119-400 K have been interpreted according to thermionic theory and thermionic field-emission theory. This junction shows deviations from the ideal thermionic theory current model, suggesting the presence of surface states, thin-layer depletion and/or non-homogeneity in the diamond/silicon interface. The T₀ anomaly has been used to explain the behaviour of the ideality factor with temperature. At very low temperatures tunnelling may occur because the E₀₀ values for these junctions are close to the value expected by thermionic field-emission theory. The usual activation-energy plot deviates from linearity at low temperatures. This deviation has been corrected supposing a ln(J_S/T²) versus 10³/nT plot. Under these conditions the Richardson constant is found to be 0.819 A cm⁻² K⁻², which is close to the theoretical value of 1.2 A cm⁻² K⁻². Field-emission device is a promising application for diamond/silicon structure.     

Interface control of high-k gate dielectrics on Ge

Important progress has been made in the passivation of Ge/gate dielectric interfaces. One important approach is by thermally oxidized GeO₂ interface and ALD high-k layers, with an interface state density D_it ∼ 2 × 10¹¹ cm⁻² eV⁻¹. Another approach is with an epi-Si/SiO₂ interface, resulting in similar D_it. Hysteresis and V_th shift, however, are still not optimal. Extensive material characterization and theoretical insights help us understanding the root cause of these remaining issues and show the way to improved interface control.     

The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer

The current-voltage (I-V) characteristics of Al/p-Si Schottky barrier diodes (SBDs) with native insulator layer were measured in the temperature range of 150-375 K. The estimated zero-bias barrier height Φ_B0 and the ideality factor n assuming thermionic emission (TE) theory show strong temperature dependence. Evaluation of the forward I-V data reveals an increase of zero-bias barrier height Φ_B0 but decrease of ideality factor n with increase in temperature. The conventional Richardson plot exhibits non-linearity below 250 K with the linear portion corresponding to activation energy of 0.41 eV and Richardson constant (A^*) value of 1.3 × 10⁻⁴ A cm⁻² K⁻² is determined from intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 A cm² K² for holes in p-type Si. Such behavior is attributed to Schottky barrier inhomogene ties by assuming a Gaussian distribution of barrier heights (BHs) due to barrier height inhomogeneities that prevail at interface. Also, Φ_B0 versus q/2kT plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of Φ_B0 = 1.055 eV and σ₀ = 0.13 V for the mean BH and zero-bias standard deviation have been obtained from this plot, respectively. Thus, the modified versus q/kT plot gives Φ_B0 and A^* as 1.050 eV and 40.08 A cm⁻² K⁻², respectively, without using the temperature coefficient of the barrier height. This value of the Richardson constant 40.03 A cm⁻² K⁻² is very close to the theoretical value of 32 A K⁻² cm⁻² for p-type Si. Hence, it has been concluded that the temperature dependence of the forward I-V characteristics of the Al/p-Si Schottky barrier diodes with native insulator layer can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights.     

Characterization of Y2O3 gate dielectric on n-GaAs substrates

Physical and electrical properties of sputtered deposited Y₂O₃ films on NH₄OH treated n-GaAs substrate are investigated. The as-deposited films and interfacial layer formation have been analyzed by using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). It is found that directly deposited Y₂O₃ on n-GaAs exhibits excellent electrical properties with low frequency dispersion (<5%), hysteresis voltage (0.24 V), and interface trap density (3 × 10¹² eV⁻¹ cm⁻²). The results show that the deposition of Y₂O₃ on n-GaAs can be an effective way to improve the interface quality by the suppression on native oxides formation, especially arsenic oxide which causes Fermi level pinning at high-k/GaAs interface. The Al/Y₂O₃/n-GaAs stack with an equivalent oxide thickness (EOT) of 2.1 nm shows a leakage current density of 3.6 × 10⁻⁶ A cm⁻² at a V_FB of 1 V. While the low-field leakage current conduction mechanism has been found to be dominated by the Schottky emission, Poole-Frenkel emission takes over at high electric fields. The energy band alignment of Y₂O₃ films on n-GaAs substrate is extracted from detailed XPS measurements. The valence and conduction band offsets at Y₂O₃/n-GaAs interfaces are found to be 2.14 and 2.21 eV, respectively.     

A comparative study of thermionic emission from vertically grown carbon nanotubes and tungsten cathodes

Thermionic emission from vertically grown carbon nanotubes (CNTs) by water-assisted chemical vapor deposition (WA-CVD) is investigated. I-V characteristics of WA-CNT samples exhibit strong Schottky effect leading to field proportionality factor β ∼ 10⁴ cm⁻¹in contrast to β ∼ 200 cm⁻¹ for the bare tungsten substrate. Non-contact atomic force microscopy imaging of CNT samples show propensity of nanoasperities over a scale of micron size over which the tungsten surface is seen to be atomically smooth. The values of root mean-square roughness for CNTs and W were found to be 24.2 nm and 0.44 nm respectively. The Richardson-Dushman plots yield work function values of Φ_CNT ? 4.5 and Φ_W ? 4.3 eV. Current versus time data shows that CNT cathodes are fifteen times noisier than tungsten cathode presumably due to increased importance of individual atomic events on the sharp CNT tips of bristle like structures. Power spectral density of current exhibited 1/f^ξ behavior with ξ ? 1.5, and 2 for W and CNTs. The former suggests surface diffusion whereas the latter indicates adsorption/desorption of atomic/molecular species as a dominant mechanism of noise generation.     

Experimental intensity and lineshape parameters of the oxygen A-band using frequency-stabilized cavity ring-down spectroscopy

Line intensities, self- and air-broadened linewidths, pressure-induced shifts, and collisional narrowing coefficients were measured from 2 ? J′ ? 32 in the P branch of the O₂A-band (12 975-13110 cm⁻¹) utilizing Galatry line profiles. Spectra were recorded using the frequency-stabilized cavity ring-down spectrometer located at NIST, Gaithersburg, MD with a spectral resolution <0.0001 cm⁻¹ and noise-equivalent absorption coefficient of 6 × 10⁻⁸ m⁻¹ Hz^−1/2. Line intensities, obtained from calibrated gas samples for 2 ? J′ ? 32, are ∼1% lower than the values in current spectroscopic databases. At higher J (18 ? J′ ? 32), the measured air- and self- broadened half widths are up to 20% lower than the extrapolated values given in HITRAN 2004, while corresponding half-widths for 2 ? J′ ? 15 are in better agreement. Available self-broadened half widths are fitted to empirical expressions with an rms of 0.8%. We discuss the implications of our results for accurate remote sensing of surface pressure and photon path length distributions.     

High-quality two-dimensional electron gas at large scale GaN/AlGaN wafer interface prepared by mass production MOCVD systems

Basic electronic properties of two-dimensional electron gas (2DEG) formed at GaN/AlGaN hetero-interface in large-scale (100 mm) wafer made by metal organic chemical vapour deposition (MOCVD) have been reported and discussed. From conventional Hall measurements, highest electron mobility was found to be μ_e∼1680 and 9000 cm²/V s at room temperature and at ∼5 K, respectively, for sheet electron density of n_s∼8×10¹² cm⁻². In magneto-resistance (MR) measurements carried out at 1.5 K in Hall bar sample defined by photolithography and ion implantation, very clear Schubnikov de-Haas oscillations and integer quantum Hall effect were observed in diagonal (R_xx) and off-diagonal (R_xy) resistances, respectively. In addition, a good insulating nature of GaN layer is confirmed by capacitance-voltage (C-V) measurement. These results suggest the high-qualitiness of our 100 mm GaN/AlGaN high electron mobility transistor (HEMT) wafers comparable to those so far reported.     

Interface characterization and current conduction in HfO2-gated MOS capacitors

Metal-oxide-semiconductor (MOS) capacitors incorporating hafnium dioxide (HfO₂) dielectrics were fabricated and investigated. In this work, the electrical and interfacial properties were characterized based on capacitance-voltage (C-V) and current-voltage (I-V) measurements. Thereafter the current conduction mechanism, electron effective mass (m*), mean density of interface traps per unit area and energy (), energy distribution of interface traps density and near-interface oxide traps density (N_NIOT) were studied in details. The characterization reveals that the dominant conduction mechanism in the region of high temperature and high field is Schottky emission. The mean density of interface traps per unit area and energy is about 6.3 × 10¹² cm⁻² eV⁻¹ by using high-low frequency capacitance method. The maximum D_it is about 7.76 × 10¹² cm⁻² eV⁻¹ located at 0.27 eV above the valence band.     

Microwave spectrum of the OD-OH2 complex: A strong deuterium isotope effect on angular momentum quenching in the hydroxyl moiety

Microwave spectra of the hydrogen bonded complex ¹⁶OD-¹⁶OH₂ have been recorded using pulsed-nozzle Fourier transform microwave spectroscopy. The potential splitting, ρ, which describes the partial quenching of the OD orbital angular momentum upon complexation, is determined to be −142.703173(65) cm⁻¹. Within the spectroscopic model employed, this value implies an energy difference of 202.46 cm⁻¹ between the ground (²A′) and first excited (²A′′) states of the complex. The observed value of ρ represents a rather large change of 3.85710(11) cm⁻¹ relative to that in the parent complex and implies a 1.30 cm⁻¹ decrease in the ²A′-²A′′ energy spacing relative to the parent species. Comparison with previous results for the ¹⁸OH complex suggests that these changes likely arise from changes in vibrationally averaged geometry upon deuteration. Magnetic hyperfine structure from the deuterium and the water protons is analyzed, as is the nuclear electric quadrupole coupling of the deuterium nucleus. Assuming negligible changes in the axial component of the electric field gradient at the deuterium upon complexation, the deuterium quadrupole coupling constant implies an average angular excursion of the OD bond axis from the vibrationally averaged a-inertial axis of the complex of ∼24°.     

Effect of plasma treatment on interface property of BCN/GaN structure

Interface properties of BCN/GaN metal-insulator-semiconductor (MIS) structures are investigated by X-ray photoelectron spectroscopy (XPS) and capacitance versus voltage (C-V) characteristics measurements. The BCN/GaN samples are fabricated by in situ process consisting of plasma treatment and deposition of BCN film in the plasma-assisted chemical vapor deposition (PACVD) apparatus. XPS measurement shows that the oxide formation at the BCN/GaN interface is suppressed by nitrogen (N₂) and hydrogen (H₂) plasma treatment. The interface state density is estimated from C-V characteristics measured at 1 MHz using Terman method. The minimum interface state density appears from 0.2 to 0.7 eV below the conduction band edge of GaN. The minimum value of the interface state density is estimated to be 3.0 × 10¹⁰ eV⁻¹ cm⁻² for the BCN/GaN structure with mixed N₂ and H₂ plasma treatment for 25 min. Even after annealing at 430 °C for 10 min, the interface state density as low as 6.0 × 10¹⁰ eV⁻¹ cm⁻² is maintained.     

Superconductivity in porous MgB2

Porous magnesium diboride samples have been prepared by the heat treatment of a pressed mixture of Mg and MgB₂ powders. It was found that linked superconducting structure is formed down to the minimum normalized density γ_c=d/d₀≅0.16 (percolation threshold), where d is the density of MgB₂ averaged over the sample, d₀=2.62 g/cm³ is the X-ray density. Lattice parameters and critical temperature of the porous sample decrease with increasing porosity (decreasing γ) and T_c2≅32 K is minimal at γ_c. The grain boundaries in the porous samples are transparent for the current and J_c∼3×10⁵ A/cm² in self field at T=20 K in the samples with γ∼0.24.     

Galvanomagnetic properties of air-stable and highly conductive potassium-intercalated graphite sheet

Magnetoresistance and Hall coefficient of air-stable potassium-intercalated graphite sheets (hereafter abbreviated as K-PGS) were determined at room temperature. The magnitude of the magnetoresistance and the absolute value of Hall coefficient of K-PGS decreased with increasing potassium content of K-PGS, n_K/n_C. Two-carrier model was used for calculating carrier density and mobility. The electron density increased with increasing n_K/n_C: 3.07×10²⁰ cm⁻³ (n_K/n_C=0.005), 5.67×10²⁰ cm⁻³ (n_K/n_C=0.008) and 6.40×10²⁰ cm⁻³ (n_K/n_C=0.011). The value of the electron density of K-PGS with n_K/n_C=0.011 (nominal composition KC₉₁) was about 80% of the reported value, 7.8×10²⁰ cm⁻³, for KC₄₈ (n_K/n_C=0.021) prepared from HOPG (highly oriented pyrolytic graphite). The mobility decreased with increasing n_K/n_C: 2.11×10³ cm² V⁻¹ s⁻¹ (n_K/n_C=0.005), 1.42×10³ cm² V⁻¹ s⁻¹ (n_K/n_C=0.008) and 1.34×10³ cm² V⁻¹ s⁻¹ (n_K/n_C=0.011). The value of the mobility of K-PGS with n_K/n_C=0.011 was about 60% of the reported value (2300 cm² V⁻¹ s⁻¹) for KC₄₈ prepared from HOPG.     

Microstructural and electrochromic properties of tungsten oxide thin films produced by surfactant mediated electrodeposition

By electrochemically controlling the structure of the surface aggregates, the grain microstructure has been optimized to yield mesoporous thin films of tungsten oxide (WO₃) at the electrode-electrolyte interface in a peroxotungstate sol in the presence of a structure-directing agent (Triton) at room temperature. Apart from the dominant ultrafine nanocrystallites and pores (5-10 nm), well-developed abutting grains (25-100 nm) and nanofibrils also constitute an integral part of the film matrix. X-ray photoemission spectra reveal the as-deposited film (WO_3−x) to be constituted by a high proportion of W⁶⁺ states with a low oxygen deficiency (x = 0.02). A relatively high W⁵⁺ content in the film, upon intercalation of 18 mC cm⁻² charge translates into a large coloring efficiency (η_VIS ∼ 70 cm² C⁻¹) and transmission modulation. At a lithium intercalation level of 22 mC cm⁻², in addition to W⁵⁺ and W⁶⁺ states, the film also comprises of W⁴⁺ states. The extremely fast color-bleach kinetics (3 and 2 s, respectively, for a 50% change in transmittance) shown by the as-deposited WO₃ film are repercussions of the mesopore morphology, the multiple nanostructures and the sixfold channels of its hexagonal modification. The film shows a high cycling stability as the switching times do not show any significant decline even after 3500 repetitive cycles. Coloration efficiency over the solar and photopic regions and current density for lithium intercalation for the as-deposited film are superior to that observed for the films annealed at 100, 250 and 500 °C. The abysmal electrochromic response of the annealed films is a consequence of surface defects like cracks and uncontrolled densification and pore shrinkage.     

Ethylene adsorption on the Pt-Cu bimetallic catalysts. Density functional theory cluster study

The adsorption of ethylene on Cu₁₂Pt₂ clusters has been studied within the density functional theory (DFT) approach to understand the high ethylene selectivity of Cu-rich Pt-Cu catalyst particles in the reaction of hydrogen-assisted 1,2-dichloroethane dechlorination. The structural parameters for Cu₁₂Pt₂ clusters with D_4h, D_2d, and C_3v symmetry have been calculated. The relative stability of the isomeric Cu₁₂Pt₂ clusters follows the order: C_3v > D_2d > D_4h. Each isomer has an active site for ethylene adsorption that consists of a single Pt atom surrounded by Cu atoms. The interaction of ethylene with the active site yields a π-C₂H₄ adsorption complex. The strongest π-C₂H₄ complex forms with the cluster of C_3v symmetry; the bonding energy, ΔE_π(C₂H₄), is −15.6 kcal mol⁻¹. The bonding energies for the π-C₂H₄ complex with Cu₁₄ and Pt₁₄ clusters are −6.5 and −18.8 kcal mol⁻¹, respectively.The addition of Pt to Cu modifies the valence spd-band of the cluster as compared to a Cu₁₄ cluster. The DOS near the Fermi level increases when C₂H₄ adsorbs on the Cu₁₂Pt₂ cluster. As well, the center of the d-band shifts toward lower binding energies. Ethylene adsorption also induces a number of states below the d-band. These states correspond to those of gas-phase C₂H₄.The vibrational frequencies of C₂H₄ adsorbed on the clusters of D_4h and C_3v symmetry have been calculated. The phonon vibrations occur below 250 cm⁻¹. The intense bands around 200 cm⁻¹ are attributed to stretching vibrations of the Pt-Cu bonds normal to the cluster surface. The stretching vibrations of the Pt-C bonds depend on the local structure of the active site: ν_s(Pt-C) = 268 cm⁻¹ and ν_as(Pt-C) = 357 cm⁻¹ for the cluster of the D_4h symmetry; ν_s(Pt-C) = 335 cm⁻¹ and ν_as(Pt-C) = 397 cm⁻¹ for the cluster of the C_3v symmetry. Bands in the range of 800-3100 cm⁻¹ are attributed to vibrations of the adsorbed C₂H₄ molecule. The signature frequencies of the π-C₂H₄ adsorption complex are the δ_s(CH₂) deformation vibration at ∼1200 cm⁻¹ and the ν(C-C) stretching vibration at ∼1500 cm⁻¹. These vibration are absent for di-σ-C₂H₄ adsorption complexes.     

Fourier transform emission spectroscopy of the EΠ-XΣ transition of CaH and CaD

The emission spectra of CaH and CaD have been recorded at high resolution using a Fourier transform spectrometer and bands belonging to the E²Π-X²Σ⁺ transition have been measured in the 20 100-20 700 cm⁻¹ region. A rotational analysis of 0-0 and 1-1 bands of both the isotopologues has been carried out. The present measurements have been combined with the previously available pure rotation and vibration-rotation data to provide improved spectroscopic constants for the E²Π state. The constants ΔG(½) = 1199.8867(34) cm⁻¹, B_e = 4.345032(49) cm⁻¹, α_e = 0.122115(92) cm⁻¹, r_e = 1.986633(11) Å for CaH, and ΔG(½)=868.7438(46) cm⁻¹, B_e = 2.212496(51) cm⁻¹, α_e = 0.036509(97) cm⁻¹, r_e = 1.993396(23) Å for CaD have been determined.     

Investigation of diode parameters using I-V and C-V characteristics of In/SiO2/p-Si (MIS) Schottky diodes

A study on interface states density distribution and characteristic parameters of the In/SiO₂/p-Si (MIS) capacitor has been made. The thickness of the SiO₂ film obtained from the measurement of the corrected capacitance in the strong accumulation region for MIS Schottky diodes was 220 Å. The diode parameters from the forward bias I-V characteristics such as ideality factor, series resistance and barrier heights were found to be 1.75, 106-112 Ω and 0.592 eV, respectively. The energy distribution of the interface state density D_it was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density obtained using the I-V characteristics had an exponential growth, with bias towards the top of the valance band, from 9.44×10¹³ eV⁻¹ cm⁻² in 0.329-E_v eV to 1.11×10¹³ eV⁻¹ cm⁻² in 0.527-E_v eV at room temperature. Furthermore, the values of interface state density D_it obtained by the Hill-Coleman method from the C-V characteristics range from 52.9×10¹³ to 1.11×10¹³ eV⁻¹ cm⁻² at a frequency range of 30kHz-1 MHz. These values of D_it and R_s were responsible for the non-ideal behaviour of I-V and C-V characteristics.     

EDXRF measurements on gold diffusion-doped Bi1.8Pb0.35Sr1.9Ca2.1Cu3Oy

Gold (Au) diffusion in superconducting Bi_1.8Pb_0.35Sr_1.9Ca_2.1Cu₃O_y was investigated over the temperature range 500-800 °C by the energy dispersive X-ray fluorescence (EDXRF) technique. It is found that the Au diffusion coefficient decreases as the diffusion-annealing temperature decreases. The temperature dependences of Au diffusion coefficient in grains and over grain boundaries are described by the relations D₁=6.7×10⁻⁵exp(−1.19 eV/k_BT) and D₂=9.7×10⁻⁴exp(−1.09 eV/k_BT), respectively. The diffusion doping of Bi-2223 by Au causes a significant increase of the lattice parameter c by about 0.19%. For the Au-diffused samples, dc electrical resistivity and transport critical current density measurements indicated the critical transition temperature increased from 100 to 104 K and the critical current density increased from 40 to 125 A cm⁻², in comparison with those of undoped samples. From scanning electron microscope (SEM) and X-ray diffraction (XRD) measurements it is observed that Au doping of the sample also improved the surface morphology and increased the ratio of the high-T_c phase to the low-T_c phase. The possible reasons for the observed improvement in microstructure and superconducting properties of the samples due to Au diffusion are also discussed.