Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes |
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Authors: | Enise Ayyildiz Hidayet Cetin |
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Institution: | a Erciyes University, Faculty of Sciences and Arts, Department of Physics, 38039 Kayseri, Turkey b Erciyes University, Yozgat Faculty of Sciences and Arts, Department of Physics, 66100 Yozgat, Turkey c Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, H-1325 Budapest, Hungary |
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Abstract: | Current-voltage and capacitance-voltage characteristics of Sn/p-Si Schottky diodes measured in the temperature range 80-320 K are presented and analysed. Anomalous strong temperature dependencies of the ideality factor and apparent barrier height were obtained. There was also a considerable difference between the apparent barrier heights obtained from current-voltage and capacitance-voltage characteristics. These anomalies are explained by the domination of the current by a high level of thermionic-field emission, and by the presence of deep levels near the Sn/Si interface, which yield a reduction of free hole concentration and a significant temperature dependence of the charge stored near the metal-semiconductor (MS) interface. The evaluation of temperature dependence of forward current for thermionic-field emission resulted in the following parameters: characteristic energy E00 = 9.8 meV, Schottky barrier height at zero bias Φb0 = 0.802 eV, bias coefficient of barrier height β = 0, and effective Richardson constant A* = 37.32 A cm−2 K−2. |
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Keywords: | Thermionic-field emission Schottky junctions Current-voltage and capacitance-voltage characteristics |
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