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1.
采用共沉淀方法制备了名义组分为Zn1-xMnxO(x=0.001,0.005,0.007,0.01)的Mn掺杂的ZnO基稀磁半导体材料,并研究了在大气气氛下经过不同温度退火后样品的结构和磁性的变化.结果表明:样品在600℃的大气条件下退火后, 仍为单一的六方纤锌矿结构的ZnO颗粒材料;当样品经过800℃退火后,Mn掺杂量为0.007,0.01的样品中除了ZnO纤锌矿结构外还观察到ZnMnO3第二相的存在.磁性测量表明,大气条件下600℃退火后的样品,呈现出室温铁磁性;而800℃退火后的样品,其室温铁磁性显著减弱,并表现为明显的顺磁性.结合对样品的光致发光谱的分析,认为合成样品的室温铁磁性是由于Mn离子对ZnO中的Zn离子的替代形成的.
关键词:
ZnO
掺杂
稀磁半导体
铁磁性 相似文献
2.
使用对Zn2N3:Mn薄膜热氧化的方法成功制备了高含N量的Mn和N共掺ZnO的稀磁半导体薄膜.在没有N离子共掺的情况下,ZnO:Mn薄膜的铁磁性非常微弱;如果进行N离子的共掺杂,就会发现ZnO:Mn薄膜在室温下表现出非常明显的铁磁性,饱和离子磁矩为0.23 μB—0.61 μB.这说明N的共掺激发了ZnO:Mn薄膜中的室温铁磁性,也就是受主的共掺引起的空穴有利于ZnO中二价Mn离子的铁磁性耦合,这和最近的相关理论研究符合很好.
关键词:
磁性半导体
受主掺杂
空穴媒介的铁磁性 相似文献
3.
利用X射线吸收精细结构、X射线衍射和磁性测量等技术研究脉冲激光气相沉积法制备的Zn1-zCoxO(x=0.01,0.02)稀磁半导体薄膜的结构和磁性.磁性测量结果表明Zn1-xCoxO样品都具有室温铁磁性.X射线衍射结果显示其薄膜样品具有结晶良好的纤锌矿结构.荧光X射线吸收精细结构测试结果表明,脉冲激光气相沉积法制备的样品中的Co离子全部进入ZnO晶格中替代了部分Zn的格点位置,生成单一相的Zn1-xCoxO稀磁半导体.通过对X射线吸收近边结构谱的分析,确定Zn1-xCoxO薄膜中存在O空位,表明Co离子与O空位的相互作用是诱导Zn1-xCoxO产生室温铁磁性的主要原因. 相似文献
4.
利用X射线吸收精细结构、X射线衍射和磁性测量等技术研究脉冲激光气相沉积法制备的Zn1-xCoxO (x=0.01,0.02)稀磁半导体薄膜的结构和磁性.磁性测量结果表明Zn1-xCoxO样品都具有室温铁磁性.X射线衍射结果显示其薄膜样品具有结晶良好的纤锌矿结构.荧光X射线吸收精细结构测试结果表明,脉冲激光气相沉积法制备的样品中的Co离子全部进入ZnO晶格中替代了部分Zn的格点位置,生成单一相的Zn1-xCoxO 稀磁半导体.通过对X射线吸收近边结构谱的分析,确定Zn1-xCoxO薄膜中存在O空位,表明Co离子与O空位的相互作用是诱导Zn1-xCoxO产生室温铁磁性的主要原因.
关键词:
1-xCoxO稀磁半导体')" href="#">Zn1-xCoxO稀磁半导体
X射线吸收精细结构谱
脉冲激光气相沉积法 相似文献
5.
本文以ZnCl2, CrCl3. 6H2O和氨水缓冲溶液为原料, 在4T脉冲磁场下水热法制备了Cr掺杂ZnO稀磁半导体晶体, 通过X射线衍射分析、扫描电子显微镜观察及采用振动样品磁强计进行磁性分析等, 探讨了脉冲磁场对其微观结构及磁性能的影响. 结果表明: Cr掺杂ZnO稀磁半导体晶体仍保持ZnO的六方纤锌矿结构, 脉冲磁场具有促进晶粒生长及取向排列的作用, 4T脉冲磁场条件下合成的Cr掺杂ZnO稀磁半导体具有良好的室温铁磁性, 其饱和磁化强度(Ms)为0.068 emu/g, 而无脉冲磁场情况下制备的样品室温下呈顺磁性, 并且, 脉冲磁场下制备将稀磁半导体的居里温度提高了16 K. 相似文献
6.
7.
采用固相反应法,将ZnO和Co2O3粉末按不同的成分配比混合,制备了稀磁半导体Zn1-xCoxO (x=0.02,0.06,0.10)材料.并使用H2气氛退火技术对样品进行了处理,得到了具有室温铁磁性的掺Co氧化锌稀磁半导体.利用全自动X射线衍射仪、X射线光电子能谱仪、高分辨透射电子显微镜和超导量子干涉器件磁强计对样品的结构、晶粒的尺寸、微观形貌以及磁性等进行了测量和标度.
关键词:
稀磁半导体
氧化锌
掺杂
固相反应法 相似文献
8.
采用直流磁控溅射方法在玻璃基底上制备了不同Fe掺杂浓度的TiO2薄膜, 并对其晶体结构和磁特性进行了研究.在所有掺杂样品中,均观察到了室温铁磁性, 磁性源于Fe离子与其近邻空间分布的空穴相互作用. 在掺杂量为7%的锐钛矿相薄膜中观察到了最大的磁化强度. 随着Fe掺杂浓度的进一步增加, TiO2的晶体结构逐渐由锐钛矿相向金红石相转变,并且磁性减弱. 不同结构的TiO2中Ti–O键长不同,导致替代的磁性Fe离子与空穴的作用强度发生改变, 进而使其磁性发生变化.
关键词:
稀磁半导体
结构相变
铁磁性 相似文献
9.
通过溶胶凝胶自燃法合成锰掺杂氧化锌纳米晶体, 研究了Mn掺杂ZnO稀磁半导体(简称DMS)的性质.X射线衍射光谱表明,锰掺杂氧化锌保留纤锌矿型状氧化锌六角晶体结构.采用能量色散X射线能谱和扫描电子显微镜分别对成分和形态进行研究.温度依赖的电阻率显示了DMS的半导体材料行为.振动样品磁强计测定的室温磁性行为,揭示了锰掺杂氧化锌的铁磁性和反磁性特性. 相似文献
10.
从实验和理论上阐述了氧空位对Co掺杂ZnO半导体磁性能的影响.采用磁控溅射法在不同的氧分压下制备了Zn095Co005O薄膜,研究了氧分压对薄膜磁性能的影响.实验结果表明,高真空条件下制备的Zn095Co005O薄膜具有室温铁磁性,提高氧分压后制备的薄膜铁磁性逐渐消失.第一性原理计算表明,在Co掺杂ZnO体系中引入氧空位有利于降低铁磁态的能量,铁磁态的稳定性与氧空位和Co之间的距离密切相关.
关键词:
Co掺杂ZnO
稀磁半导体
第一性原理计算
氧空位缺陷 相似文献
11.
12.
We report the effects of co-doping ZnO with Co and Mn in an n-type environment on ferromagnetism (FM). Two sets of samples, Zn(0.95-x)Co(0.04)Mn(x)O (0.000 ≤ x ≤ 0.02) and Zn(0.95-y)Co(y)Mn(0.04)O (0.000 ≤ y ≤ 0.02), were synthesized by the chemical route with oxygen vacancies introduced via annealing in a forming gas (reducing the atmosphere). In addition to the magnetization, the particles were characterized by x-ray diffraction, diffuse reflectance spectroscopy and x-ray absorption near-edge emission spectroscopy. The Co and Mn ions were determined to be in the + 2 state in a tetrahedral symmetry, with no evidence of metallic Co or Mn. We find that while a purely Mn-doped sample exhibits weak FM at room temperature, the general effect of Mn as a co-dopant with Co, in an n-type environment, is to decrease the moment strongly. All of our results can be systematically explained within the context of defect mediated FM in these wide bandgap semiconductors, where the coincidence of the spin-split-impurity (defect) band states and the 3d states leads to the development of a net moment alongside the formation of spin polarons. 相似文献
13.
We report the microstructural and magnetic properties of transition (3d) and rare earth (4f) metal substituted into the Ax:Zn1?xO (A=Mn, Gd and Mn/Gd) nanocrystal samples synthesized by solgel method. The structural properties and morphology of all samples have been analysed using X-ray diffraction (XRD) method and scanning electron microscopy. The impurity phase in the XRD patterns for all samples is not seen, except (Mn/Gd):ZnO sample where a very weak secondary phase of Gd2O3 is observed. Due to the large mismatch of the ionic radii between Mn2+ and Gd3+ ions, the strain inside the matrix increases, unlike the crystallite size decreases with the substitution of Mn and Gd into ZnO system. A couple of additional vibration modes due to the dopant have been observed in Raman spectrum. The magnetic properties have been studied by vibrating sample magnetometer. The magnetic hysteresis shows that Mn:ZnO and Gd:ZnO have soft ferromagnetic (FM) behaviour, whereas (Mn/Gd):ZnO has strong FM behaviour at room temperature (RT). The enhancement of ferromagnetism (FM) in (Mn/Gd):ZnO sample might be related to short-range FM coupling between Mn2+ and Gd3+ ions via defects potential and/or strain-induced FM coupling due to the expansion lattice by doping. The experimental results indicate that RTFM can be achieved by co-substitution of 3d and 4f metals in ZnO which can be used in spintronics applications. 相似文献
14.
15.
M.-H. Tsai T.-Y. JiangC.-Y. Huang 《Journal of magnetism and magnetic materials》2012,324(9):1733-1738
Spin-polarized first-principles electronic structure and total energy calculations have been performed to better understand the magnetic properties of Co doped ZnO (ZnO:Co) with vacancies and Ga co-dopants. The paramagnetic state of ZnO:Co, in which Co ions lose their magnetic moments, has been found to be unstable. The total energy results show that acceptor-like Zn vacancies and donor-like Ga co-dopants render the anti-ferromagnetic (AFM) and ferromagnetic (FM) states to be more favorable, respectively. With O vacancies, ZnO:Co has been found to be in the weak FM state. These magnetic properties can be understood by the calculated O- and Zn-vacancies and Ga co-dopant induced changes of the electronic structure, which suggest that AFM and FM Co-Co couplings are mediated by O 2p-Co majority (↑)-spin 3d hybridized states in the valence band of ZnO and O-vacancy-derived p states or Ga sp states in the ZnO band gap, respectively. For ZnO:Co with Zn vacancies (Ga co-dopants) the AFM (FM) coupling outweighs the FM (AFM) coupling and results in the AFM (FM) state, while for ZnO:Co with O vacancies, both the FM and AFM couplings are enhanced by similar degrees and result in the weak FM state. This study reveals a competition between FM and AFM couplings in ZnO:Co with vacancies and Ga co-dopants, the detailed balancing between which determines the magnetic properties of these materials. 相似文献
16.
Ni-doped ZnO powder was synthesized by thermal co-decomposition of a mixture of bis(acetylacetonato) zinc(II)hydrate and bis(dimethylglyoximato)nickel(II) complexes. The samples were characterised by X-ray diffraction (XRD), Energy dispersion X-ray fluorescence (EDXRF), and FT-IR spectroscopy. The atomic ratio Ni/Zn of the samples was determined by the EDXRF method to be 1%, 4.3%, 7.4% and 22.5 wt%. The XRD studies show the formation of nanocrystalline (14-18 nm) of Ni-doped ZnO along with nanoparticles of NiO. By magnetic measurements, it was observed that powder contains 1%Ni, 4.3%Ni, 7.4%Ni exhibits superparamagnetic behaviour while the sample of 22.5%Ni prepared in closed atmospheric environment shows clear ferromagnetic (FM) loop at room temperature due to the formation of solid solution Zn1−xNixO. 相似文献
17.
Miaojuan Ren Xianyang Feng Ping Li Xiaojing Liu Zhong Zhang 《Solid State Communications》2011,151(11):864-866
The electronic structures and magnetic properties of Pd-doped ZnO have been studied by the full-potential linear augmented plane wave (FLAPW) method using the generalized gradient approximation (GGA). We find that Pd-doped ZnO becomes 100% spin polarized when Pd substitutes for Zn in the 2×2×2 ZnO supercell. The supercell magnetic moment reaches 2.0μB. Long-range ferromagnetic (FM) coupling is obtained with all Pd dopant configurations, and a Curie temperature as high as 860 K is predicted for the ground-state configuration. The hybridized Pd(4d)-O(2p)-Zn(4d)-O(2p)-Pd(4d) chain formed through p-d-like coupling is responsible for the long-range room-temperature FM coupling. We discuss the effect of O vacancies or Zn vacancies on the magnetism as well. 相似文献
18.
Youguo Yan Lixia Zhou Jun Zhang Songqing Hu Shuangqing Sun Yuhua Zhen 《Applied Physics A: Materials Science & Processing》2012,109(3):627-634
In this article, novel ZnO nanotetrapods with tubular legs was successfully synthesized using mixed powder of Zn, ZnO, and carbon as source. The growth process was analyzed at large, and a two-step growth model, viz. initial deficient-oxidation and latter second-volatilization, was proposed to explain the formation of tubular leg of ZnO nanotetrapod. In the growth model, the high Zn vapor pressure and high growth temperature were considered as two crucial factors determining the growth behavior. Zn-rich ZnO nanotetrapod formed under high Zn vapor pressure at the initial stage. These redundant Zn clusters coexisted in ZnO lattice as interstitial Zn. The following second-volatilization of interstitial Zn under high growth temperature led to formation of tubular leg. Four other experiments were designed to analyze the growth behavior under high and low Zn vapor pressure and growth temperature, respectively, and these experimental results further confirmed the validity of our growth model. Our experiment proposed a feasible synthesis route to prepare hollow nanostructures controlled by the vapor pressure and growth temperature. Furthermore, these novel ZnO nanotetrapods might have potential application as building blocks for functional nanodevices. 相似文献
19.
The Cu-doped ZnO and pure ZnO powders were synthesized by sol-gel method. The structural properties of the samples were investigated by X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and X-ray absorption spectroscopy. All the results confirmed that copper ions were well incorporated into the ZnO lattices by substituting Zn sites without changing the wurtzite structure and no secondary phase existed in Cu-doped ZnO nanoparticles. The Zn0.97Cu0.03O nanoparticles exhibited ferromagnetism at room temperature, as established by the vibrating sample magnetometer analysis. 相似文献
20.
B. Pandey P. R. Poudel A. K. Singh A. Neogi D. L. Weathers 《Applied Physics A: Materials Science & Processing》2013,112(3):801-806
Zinc oxide (ZnO) nanostructures have been synthesized by the implantation of ZnO molecular ions into SiO2 followed by high temperature thermal annealing. 35 keV ZnO? ions were implanted to a fluence of 5×1016 ions/cm2 into SiO2 at room temperature (RT). The implanted sample was annealed in an oxygen environment to allow the growth of ZnO precipitates. In the as-implanted sample, Zn nanoparticles up to 4.5 nm in diameter were observed and were distributed throughout the implanted depth in the SiO2. The highest concentration of Zn from the implantation was at a depth of 25 nm. During annealing, Zn diffused into the substrate and combined with oxygen to form ZnO. ZnO nanostructures thus formed had diameters up to 8 nm, embedded in SiO2. Donor-bound exciton (D, X), acceptor-bound exciton (A, X), and donor–acceptor-pair (DAP) transitions were observed in low temperature photoluminescence (PL) measurements on an annealed sample. RT-PL measurement showed band-edge emission in the ultraviolet region with a full width at half maximum of 121 meV. Time-resolved PL measurements performed at 4 K revealed an excitonic lifetime of 160 ps. 相似文献