倒装芯片塑料球栅阵列封装器件在外应力下的失效机理

倒装芯片塑料球栅阵列(FC-PBGA)封装形式独特而被广泛应用, 分析研究其在实际应用过程中, 在高温、电、水汽等多种综合环境应力条件作用下的失效机理对提高其应用可靠性有重要意义. 本文对0.13 μm 6层铜布线工艺的FC-PBGA FPGA器件, 通过暴露器件在以高温回流焊过程中的热-机械应力为主的综合外应力作用下的失效模式, 分析与失效模式相对应的失效机理. 研究结果表明, FC-PBGA器件组装时的内外温差及高温回流焊安装过程中所产生的热-机械应力是导致失效的根本原因, 在该应力作用下, 芯片上的焊球会发生再熔融、桥接相邻焊球致器件短路失效; 芯片与基板之间的填充料会发生裂缝分层、倒装芯片焊球开裂/脱落致器件开路失效; 芯片内部的铜/低k互连结构的完整性受损伤而影响FC-PBGA器件的使用寿命.     

基于腔面非注入区的半导体激光器的热特性分析

利用Ansys有限元分析软件模拟了宽条形激光器腔面在不同生热率条件下对有源区温度的影响,并对带有腔面非注入区的激光器结构进行了热分析,比较了不同长度的非注入区结构的器件的温度特性。腔面的温升对器件可靠性影响极大,计算结果表明随着非注入区宽度的增加,芯片前腔面有源区的温度明显降低。结果为采用非注入区结构提高COD阈值功率提供了设计参考。     

电离辐射环境下的部分耗尽绝缘体上硅n型金属氧化物半导体场效应晶体管可靠性研究

随着半导体技术的进步, 集成小尺寸绝缘体上硅器件的芯片开始应用到航空航天领域, 使得器件在使用中面临了深空辐射环境与自身常规可靠性的双重挑战. 进行小尺寸器件电离辐射环境下的可靠性试验有助于对器件综合可靠性进行评估. 参照国标GB2689.1-81恒定应力寿命试验与加速寿命试验方法总则进行电应力选取, 对部分耗尽绝缘体上硅n型金属氧化物半导体场效应晶体管进行了电离辐射环境下的常规可靠性研究. 通过试验对比, 定性地分析了氧化物陷阱电荷和界面态对器件敏感参数的影响, 得出了氧化物陷阱电荷和界面态随着时间参数的变化, 在不同阶段对器件参数的影响. 结果表明, 总剂量效应与电应力的共同作用将加剧器件敏感参数的退化, 二者的共同作用远大于单一影响因子.     

衬底弯曲度对GaN基LED芯片性能的影响

利用低压MOCVD系统在弯曲度值不同的蓝宝石衬底上生长了GaN基LED外延结构并制作芯片。测量了芯片的主要电学和光学参数,并分析了衬底弯曲度值对芯片性能的影响。分析结果表明:存在弯曲度的衬底预先弛豫了外延层中的部分应力,改善了外延层的质量,从而提高了LED芯片的性能。随着衬底弯曲度值的逐渐增加,下层GaN对有源层中InGaN材料的压应力作用不断减小,导致芯片的主波长逐渐发生蓝移。     

超短沟道绝缘层上硅平面场效应晶体管中热载流子注入应力导致的退化对沟道长度的依赖性

随着场效应晶体管(MOSFET)器件尺寸的进一步缩小和器件新结构的引入, 学术界和工业界对器件中热载流子注入(hot carrier injections, HCI)所引起的可靠性问题日益关注. 本文研究了超短沟道长度(L=30–150 nm)绝缘层上硅(silicon on insulator, SOI)场效应晶体管在HCI应力下的电学性能退化机理. 研究结果表明, 在超短沟道情况下, HCI 应力导致的退化随着沟道长度变小而减轻. 通过研究不同栅长器件的恢复特性可以看出, 该现象是由于随着沟道长度的减小, HCI应力下偏压温度不稳定性效应所占比例变大而导致的. 此外, 本文关于SOI器件中HCI应力导致的退化和器件栅长关系的结果与最近报道的鳍式场效晶体管(FinFET)中的结果相反. 因此, 在超短沟道情况下, SOI平面MOSFET器件有可能具有比FinFET器件更好的HCI可靠性.     

采用多晶硅场板降低单光子雪崩二极管探测器暗计数

针对削弱暗计数噪声对单光子雪崩二极管(single-photon avalanche diode, SPAD)探测器的影响,本文研究了采用多晶硅场板降低SPAD器件暗计数率(dark count rate, DCR)的机理和方法.基于0.18-μm标准CMOS工艺,在一种可缩小的P+/P阱/深N阱器件结构的P+有源区和浅沟道隔离区(shallow trench isolation, STI)之间淀积了一层多晶硅场板来减小器件暗计数噪声.测试结果表明,多晶硅场板的淀积使SPAD器件的DCR降低了一个数量级,其在高温下的暗计数性能甚至优于室温下的未淀积多晶硅场板的器件.通过TCAD仿真进一步发现, SPAD器件保护环区域的峰值电场被多晶硅场板引入到STI内部,保护环区域的整体电场降低了25%;最后通过对DCR的建模计算得出,多晶硅场板削弱了具有高缺陷密度的保护环区域的电场,使缺陷相关DCR显著降低,从而有效改善了SPAD的暗计数性能.     

工艺偏差下PMOS器件的负偏置温度不稳定效应分布特性

当器件特征尺寸进入纳米级,负偏置温度不稳定性(NBTI)效应和工艺偏差都会导致p型金属氧化层半导体(PMOS)器件性能和可靠性的下降.基于反应-扩散(R-D)模型,本文分析了工艺偏差对NBTI效应的影响;在此基础上将氧化层厚度误差和初始阈值电压误差引入到R-D模型中,提出了在工艺偏差下PMOS器件的NBTI效应统计模型.基于65 nm工艺,首先蒙特卡罗仿真表明在工艺偏差和NBTI效应共同作用下,PMOS器件阈值电压虽然会随着应力时间增大而沿着负方向增加,但是阈值电压的匹配性却随着时间推移而变好;其次验证本文提出的统计模型准确性,以R-D模型为参考,在10~4s应力时间内,PMOS器件阈值电压退化量平均值和均方差的最大相对误差分别为0.058%和0.91%;最后将此模型应用到电流舵型数模转换器中,仿真结果显示在工艺偏差和NBTI效应共同作用下,数模转换器的增益误差会随着应力时间的推移而增大,而线性误差会逐渐减小.     

CMOS有源像素传感器的中子辐照位移损伤效应

为研究空间高能粒子位移损伤效应引起的星用CMOS图像传感器性能退化,对国产CMOS有源像素传感器进行了中子辐照试验,当辐射注量达到预定注量点时,采用离线的测试方法,定量测试了器件的暗信号、暗信号非均匀性、饱和输出电压、像素单元输出电压等参数的变化规律。通过对CMOS图像传感器敏感参数退化规律及其与器件工艺、结构的相关性进行分析,并根据半导体器件辐射效应理论,深入研究了器件参数退化机理。试验结果表明,暗信号和暗信号非均匀性随着中子辐照注量的增大而显著增大,饱和输出电压基本保持不变。暗信号的退化是因为位移效应在体硅内引入大量体缺陷增加了耗尽区内热载流子产生率,暗信号非均匀性的退化主要来自于器件受中子辐照后在像素与像素之间产生了大量非均匀性的体缺陷能级。另外,还在样品芯片上引出了独立的像素单元测试管脚,测试了不同积分时间下像素单元输出信号。     

基于选区外延技术的单片集成阵列波导光栅与单载流子探测器的端对接设计

选区外延技术是实现有源与无源光器件单片集成的一种有效的工艺手段,但同时对两种器件在异质生长界面处的对接结构提出了更高的设计要求.本文通过选区外延技术实现了InP基O波段4通道阵列波导光栅与单载流子探测器的单片集成.通过光学仿真重点研究了选区外延后界面处形貌对无源波导结构与有源光探测器间光耦合效率的影响,包括伸长的光学匹配层、二次外延生长边界位置、波导刻蚀边界位置等因素.研究结果表明,在保证二次外延生长边界对准异质对接界面时,将光学匹配层伸出探测器前端10μm并与外延边界无缝对接既可以保证高效的光传输效率(或探测器量子效率),又可以避免外延界面处的异常生长对器件制备工艺的影响,保证生长工艺与器件制备工艺的兼容性.成功制备的单片集成芯片具有高达76%的探测器量子效率,证明了对接方案的有效性.同时,集成芯片的低串扰(-22 dB)与解复用特性展示出其作为解复用光接收芯片具有巨大潜力.     

CMOS电路低温特性及其仿真

本文采用0.25微米工艺制备了CMOS器件和电路,通过对300K、77K和4K温度下器件和电路特性的测量,研究了工作温度降低对CMOS电路特性的影响.通过讨论MOSFET器件和互连线主要特性参数随温度的变化情况,修改了常温CMOS BSIM3模型以及互连线参数,建立了77K、4K温度下的低温电路仿真模型.利用上述新建立的低温电路仿真模型对CMOS电路进行仿真,并将仿真结果与实际测量结果比较,获得了比较一致的结果.研究表明在4K温度下CMOS电路的工作性能大约有50%到60%的改善.     

Lateral stress-induced propagation characteristics in photonic crystal fibres

Using the finite element method, this paper investigates lateral stress-induced propagation characteristics in a photonic crystal fibre of hexagonal symmetry. The results of simulation show the strong stress dependence of effective index of the fundamental guided mode, phase modal birefringence and confinement loss. It also finds that the contribution of the geometrical effect that is related only to deformation of the photonic crystal fibre and the stress-related contribution to phase modal birefringence and confinement loss are entirely different. Furthermore, polarization-dependent stress sensitivity of confinement loss is proposed in this paper.     

Attaching Planar Waveguide Dies to Aluminum Using Low-Stress Thermal Conductive Adhesives

We analyzed stress and heat transfer in attached planar waveguides. Die attaching adhesives were known to be the key to avoiding stress buildup in and dissipating heat from waveguides. When adhesives have a shear modulus of less than 1 MPa and a thermal conductivity of 2 w/mk, a 0.1-0.2-mm-thick layer of adhesive can eliminate stress-related effects and efficiently dissipate 30-50 mW/mm² of heat, even if aluminum is used as a substrate. Supersoft thermal conductive adhesives were thus developed and used to attach 60-mm-long AWG dies to aluminum with excellent results.     

MR imaging of fatigue stress injuries to bones: intra- and interobserver agreement

The aim of this study was to determine the validity of MR imaging (MRI) in the assessment of stress-related injuries to bone.MR images of 50 military recruits (8 females and 42 males; 18-27 (mean 20) years of age) were retrospectively evaluated twice for stress injuries to bone by 4 radiologists (2 musculoskeletal radiologists, 2 radiology residents). Coronal T1-weighed (T1W) and STIR images, as well as axial and coronal T2-weighted (T2W) fat-suppressed images were taken using a 1.0T scanner. Rates for sensitivity, specificity, and accuracy of MRI of the stress-related injuries were calculated. Intraobserver and interobserver agreement was determined with kappa statistics.Rates for MRI sensitivity were 27-96%, for specificity 65-100%, and for diagnostic accuracy 58-97%. Lowest rates were seen when reading T1W images and highest when reading STIR images. Readers showed moderate to excellent intraobserver agreement (kappa 0.75-0.95). Interobserver agreement was fair to excellent (kappa 0.41-0.91), and the lowest values were seen in the interpretation of T1W images. Normal findings could be differentiated from various grades of stress injury to bone.MRI is a valid means of revealing the presence of stress injuries to bone and their staging. Observer agreement is good to excellent when using T2W images and STIR images, while T1W images are of lesser value.     

Influence of the stress on magnetoelectric effect in magnetostrictive-PZT bilayers

In this letter, we investigate the influence of the stress on magnetoelectric (ME) effect in a magnetostrictive-PZT bilayer. ME voltage coefficient α*_E = δE / δH, where δE is the induced electric field for an applied alternating current (ac) magnetic field δH, is obtained by solving the stress-related piezoelectric constitutive equation and the conventional magnetostrictive equation with appropriate boundary condition. Based on the free-energy density function of the PZT film in stress state, we get the stress-related piezoelectric charge coefficient ^p d*₃₁ and dielectric permittivity ^pε*₃₃. After taking the cobalt ferrite (CFO) as magnetostrictive phase, it is found that α*_E increases with decreasing 2-d compressive stress for CFO-PZT, which not only is qualitatively consistent with previous experimental measurements, but also provides a possible route to improve the ME effect.      

轴对称构件受力分析的插值粒子法

面对土木工程与机械工程中广泛存在的轴对称力学问题, 采用具有离散点插值特性的无网格方法形函数, 结合弹性力学空间轴对称问题的最小势能原理, 建立了轴对称构件力学分析的插值粒子法. 本文无网格法方法构造形函数不依赖网格, 也具有像有限元法一样可直接施加边界条件的优点. 本方法能直接获得全域连续应力场, 避免了有限元法应力后处理二次拟合带来的计算误差. 最后通过实例分析, 验证了所建立的无网格方法的有效性.     

Conditional Entropy: A Potential Digital Marker for Stress

Recent decades have witnessed a substantial progress in the utilization of brain activity for the identification of stress digital markers. In particular, the success of entropic measures for this purpose is very appealing, considering (1) their suitability for capturing both linear and non-linear characteristics of brain activity recordings and (2) their direct association with the brain signal variability. These findings rely on external stimuli to induce the brain stress response. On the other hand, research suggests that the use of different types of experimentally induced psychological and physical stressors could potentially yield differential impacts on the brain response to stress and therefore should be dissociated from more general patterns. The present study takes a step toward addressing this issue by introducing conditional entropy (CE) as a potential electroencephalography (EEG)-based resting-state digital marker of stress. For this purpose, we use the resting-state multi-channel EEG recordings of 20 individuals whose responses to stress-related questionnaires show significantly higher and lower level of stress. Through the application of representational similarity analysis (RSA) and K-nearest-neighbor (KNN) classification, we verify the potential that the use of CE can offer to the solution concept of finding an effective digital marker for stress.     

Extension of the Vook–Witt and inverse Vook–Witt elastic grain-interaction models to general loading states

The recently developed Vook–Witt and inverse Vook–Witt elastic grain-interaction models have been employed for the calculation of mechanical elastic constants and diffraction (X-ray) stress factors of, in particular, thin films. However, their applicability is limited to a planar, rotationally symmetric state of macroscopic, mechanical stress. For such a loading state (and an, at least, transversely, elastically isotropic specimen), only two mechanical elastic constants are necessary to describe mechanical elastic behaviour and only the sum of two diffraction (X-ray) stress factors is needed to relate lattice strains to the one independent component of the mechanical stress tensor. The restriction to a planar, rotationally symmetric state of mechanical stress will be removed in this work. Calculation of the full stiffness tensor and all six diffraction (X-ray) stress factors then becomes possible. It was found previously that the Vook–Witt and inverse Vook–Witt models become (but only approximately) equivalent to the Eshelby–Kröner model for certain ideal grain-shape textures. For this reason, results of numerical calculations of mechanical elastic constants and diffraction (X-ray) stress factors, based on the Vook–Witt and inverse Vook–Witt models, will be presented and compared to corresponding results obtained from the Eshelby--Kröner grain-interaction model considering ideal grain-shape (‘morphological’) textures.     

Behavior of a PZT ring under non-uniform mechanical stress

Ring-shaped lead zirconate titanate (PZT) piezoelectric vibrators were subjected to non-uniform mechanical stress applied by bolt clamping. The effect of mechanical stress on the effective electromechanical coupling factor (k_eff) and mechanical quality factor (Q_m) of the thickness and wall thickness modes was studied by an equivalent electric circuit analysis. The initiation and propagation of cracks under mechanical stress were also discussed based on the resonance method and the indentation technique. k_eff for both the thickness and wall thickness modes decreased with increase in mechanical stress due to de-poling of the PZT. Q_m of the thickness mode dropped sharply with increase in mechanical stress while Q_m of the wall thickness mode remained almost unchange. Existence of microcracks in a PZT vibrator can be detected by the occurrence of spurious vibrations at the wall thickness mode in the electrical impedance vs. frequency spectra.     

Therapeutic targets in the ASK1-dependent stress signaling pathways

Apoptosis signal-regulating kinase 1 (ASK1) is a member of the mitogen-activated protein kinase kinase kinase (MAP3K) family that activates downstream MAP kinases (MAPKs), c-Jun N-terminal kinases (JNKs) and p38 MAPKs, in response to various stresses, such as reactive oxygen species (ROS), endoplasmic reticulum (ER) stress, lipopolysaccharide, and calcium overload. Activation of the JNK and p38 pathways induces stress responses such as cell death, differentiation, and the production of inflammatory cytokines. A series of studies using ASK1-deficient mice have indicated that ASK1 plays important roles in many stress-related diseases, including cardiovascular and neurodegenerative diseases, suggesting that small compounds that inhibit ASK1 activity could possibly be used for the amelioration of the development and/or progression of these diseases. In this review, we provide an overview of the pathophysiological roles of ASK1-dependent signaling pathways and discuss the mechanistic basis for how these could serve as potential therapeutic targets.     

Sublimation inside an elastoplastic material

Thermodynamic and kinetic approaches for sublimation inside elastoplastic material under tensile stress are developed for large strains. Various conceptual problems related to irreversible plastic deformation are addressed for a spherical bubble. They include definitions of the thermodynamic driving forces and activation energies, nontraditional concepts of a critical nucleus, path dependence of its appearance, modes of its growth (sublimation or expansion due to loss of mechanical stability), and the possibility of reverse transformation. The kinetic relationships between sublimation pressure and temperature are obtained.