电离辐射环境下的部分耗尽绝缘体上硅n型金属氧化物半导体场效应晶体管可靠性研究

随着半导体技术的进步, 集成小尺寸绝缘体上硅器件的芯片开始应用到航空航天领域, 使得器件在使用中面临了深空辐射环境与自身常规可靠性的双重挑战. 进行小尺寸器件电离辐射环境下的可靠性试验有助于对器件综合可靠性进行评估. 参照国标GB2689.1-81恒定应力寿命试验与加速寿命试验方法总则进行电应力选取, 对部分耗尽绝缘体上硅n型金属氧化物半导体场效应晶体管进行了电离辐射环境下的常规可靠性研究. 通过试验对比, 定性地分析了氧化物陷阱电荷和界面态对器件敏感参数的影响, 得出了氧化物陷阱电荷和界面态随着时间参数的变化, 在不同阶段对器件参数的影响. 结果表明, 总剂量效应与电应力的共同作用将加剧器件敏感参数的退化, 二者的共同作用远大于单一影响因子.

Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment

With the development of semiconductor technology, the small size silicon-on-insulator metal-oxide-semiconductor field-effect transistor devices start to be applied to the aerospace field, which makes the device in use face dual challenges of the deep space radiation environment and conventional reliability. The small size device reliability test under ionizing radiation environment is conducible to the assessing of the comprehensive reliability of the device. With reference to the national standard GB2689.1-81 constant stress life test and accelerated life test method for the general electric stress, the conventional reliability of the sub-micron type partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor is studied under the ionizing radiation environment. The experiment is divided into three groups marked by A, B and C. For all the experimental devices, the gate oxide t_ox=12.5 nm, channel length L=0.8 μm and width W=8 μm, and nominal operating voltage V=3.5 V. We carry out the electrical stress test on A group after irradiation with γ -ray dose up to 1×10⁴ Gy (Si) under the bias condition. Before group B is tested, it has been irradiated by the same dose γ -ray and annealed for one week. Group C is not irradiated by γ -ray before the electric stress test. After irradiation we measure the DC characteristics of the devices: the drain current versus gate voltage (I_DS-V_GS) and the drain current versus drain voltage (I_DS-V_DS). The hot carrier injection (HCI) experiment is periodically interrupted to measure the DC characteristics of the device. The sensitive parameters of HCI and irradiation are V_T, GM and ID_lin, and after HCI stress, all parameters are degenerated. Through the contrast test, we qualitatively analyze the influences of the oxide trap charge and interface state on the sensitive parameters. We obtain the curve of the oxide trap charge and interface state versus time, and the influences of the different stages on device parameters. The results show that the combination of the total dose radiation environment and electrical stress causes the sensitive parameters of the device to rapidly degrade, this combination of these two factors gives rise to bigger effect than a single influence factor.