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用小角x射线散射技术研究以直流磁控溅射方法制备TiNi合金薄膜其退火生成的晶化粒子的长大行为.发现在室温下溅射的TiNi合金薄膜存在小于1nm尺寸的微空洞,将退火后薄膜的小角x射线散射强度扣除退火前微空洞产生的小角x射线散射强度,用这种方法得到的散射强度遵从Porod定律;而用通常方法扣除背底得到的散射强度结果不满足Porod定律.TiNi合金薄膜在733—793K之间退火晶化粒子的长大激活能Eg=301kJmol.
关键词:
TiNi薄膜
晶化粒子
长大激活能 相似文献
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自从 Krishnamurti(1930)和 Warren(1934)首先对碳黑及其它一些物质观察到小角散射现象后,立即吸引了科学家们的注意,把精力投入基本原理和X射线谱仪的更新工作中去.在用X射线对溶液、纤维和蛋白质研究的同时,又推动了光和热中子小角散射研究的发展,确认小角散射技术能够广泛应用于冶金学、生物大分子、聚合物及物理化学等各种领域.1955年法国著名物理学家 Guinier和 Fournet合写的“Small Angle Scattering of X-Rays”这一经典著作问世后,热中子小角散射的研究自此稳定地开展起来. 第一届和第二届小角散射国际会议分别在美国的 Syrac… 相似文献
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应用小角x射线散射技术分析了Al-Zn-Mg-Cu-Li合金在130,150和160℃温度时效24 h析出粒子的微结构参数的变化情况. 粒子的半径随着时效温度的增高而增加,它的比内表面积和体积百分数随着时效温度的增高而减小. 对Porod曲线q3J(q)-q2的分析表明,析出粒子与基体之间有明显的界面.
关键词:
小角x射线散射
Al-Zn-Mg-Cu-Li合金
时效
析出粒子 相似文献
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应用小角X射线散射技术(SAXS)对两亲嵌段共聚物聚苯乙烯聚丙烯酸(PS-b-PAA)胶束形貌的温度影响进行了原位表征.SAXS结果表明:随着水含量的增加,粒子尺寸相应增加;对于水含量10%的PS_(3000)-b-PAA_(5000)胶束溶液,发现了明显的SAXS双峰现象;双峰的位置不随着温度的变化而改变,但是peak 1和peak 2的相对强度随着温度发生了减弱和增强的交错变化;相邻的SAXS双峰说明在PS_(3000)-b-PAA_(5000)胶束溶液中最初形成的粒子尺寸并不是均匀的,主要分为尺寸极其相近的两种球形粒子;随着温度的升高,粒径大小不同的两种粒子存在着一种消融和生长的过程,并且保持着一个相同的归一化动态平衡速率. 相似文献
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本文分析了同步辐射小角X射线散射的特点与应用、国内外现状及新建北京同步辐射小角X射线散射站的必要性与机遇。 相似文献
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文章主要介绍了几种X射线散射技术,包括X射线小角反射技术、X射线漫散射技术、掠入射X射线衍射和多晶薄膜的小角衍射技术。通过具体的事例说明这些X射线散射方法在薄膜研究中的应用。 相似文献
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We study the discrete Painlevé equations associated to the affine Weyl group which can be obtained by the implementation of a special limits of -associated equations. This study is motivated by the existence of two -associated discrete both having a double ternary dependence in their coefficients and which have not been related before. We show here that two equations correspond to two different limits of a -associated discrete Painlevé equation. Applying the same limiting procedures to other -associated equations we obtained several -related equations most of which have not been previously derived. 相似文献
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研究了Er1.0P5O14铒非晶玻璃的红外量子剪裁现象. 从吸收谱和激发光谱的计算比较中肯定了Er1.0P5O14非晶 玻璃的1537.0 nm红外荧光为多光子量子剪裁荧光. 从Er1.0P5O14非晶玻璃的可见和红外荧光发射光谱中发现激发2H11/2, 4G11/2和4G9/2能级所导致的4I13/2→4I15/2量子剪裁红外荧光很强;基于自发辐射速率、无辐射弛豫速率和能量传递速率等参数的计算,对其量子剪裁机理进行了分析.发现起源于基态的强下转换能量传递{2H11/2→4I9/2,4I15/2→4I13/2},{4G11/2→4I13/2, 4I15/2→2H11/2},{4G9/2→4F7/2,4I15/2→4I13/2}和{4G9/2→4I13/2, 4I15/2→2H11/2}是导致Er1.0P5O14非晶玻璃具有强的三光子和四光子量子剪裁红外荧光的原因.研究结果对改善太阳能电池效率有一定意义. 相似文献
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An attempt is made to synthesize Nd2Co14C compound by mechanical alloying Nd16Co76B8−xCx (0x8) alloys and subsequent annealing. Phase formation and magnetic properties of Nd2Fe14B-type Nd16Co76B8−xCx alloys and their hydrides are investigated. The Nd2Co14(B,C) phase with Nd2Fe14B-type structure is formed for Nd16Co76B8−xCx (0x7) alloys, while NdCo7Cδ phase with TbCu7-type structure is observed in Nd16Co76C8 alloy. The lattice parameter c of the Nd2Co14(B,C) phase decreases with increasing the carbon content. A limit volume of the unit cell to form the Nd2Fe14B-type structure is estimated to be 0.870 nm3. The spin-reorientation temperature TSR increases with increasing the carbon content, due to an enhancement of magnetocrystalline anisotropy caused by carbon substitution for boron. After hydrogenation, the lattice expansion is observed for Nd16Co76B8−xCx (0x7) alloys. The spin-reorientation temperature of Nd16Co76B8−xCxHy (0x7) is much lower than that of the host alloys. Some structural and magnetic properties of hypothetic Nd2Co14C and Nd2Co14CHy compounds are estimated by extrapolation. 相似文献
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The effects of an electric field on the interband transitions in InxGa1−xAs/InyAl1−yAs coupled step quantum wells have been investigated both experimentally and theoretically. A InxGa1−xAs/InyAl1−yAs coupled step quantum well sample consisted of the two sets of a 50 Å In0.53Ga0.47As shallow quantum well and a 50 Å In0.65Ga0.35As deep step quantum well bounded by two thick In0.52Al0.48As barriers separated by a 30 Å In0.52Al0.48As embedded potential barrier. The Stark shift of the interband transition energy in the InxGa1−xAs/InyAl1−yAs coupled step quantum well is larger than that of the single quantum well, and the oscillator strength in the InxGa1−xAs/InyAl1−yAs coupled step quantum well is larger than that in a coupled rectangular quantum well. These results indicate that InxGa1−xAs/InyAl1−yAs coupled step quantum wells hold promise for potential applications in optoelectron devices, such as tunable lasers. 相似文献
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