Transparent conductive reduced graphene oxide thin films produced by spray coating

Reduced graphene oxide thin films were fabricated on quartz by spray coating method using a stable dispersion of reduced graphene oxide in N,N-Dimethylformamide.The dispersion was produced by chemical reduction of graphene oxide,and the film thickness was controlled with the amount of spray volume.AFM measurements revealed that the thin films have near-atomically flat surface.The chemical and structural parameters of the samples were analyzed by Raman and XPS studies.It was found that the thin films show electrical conductivity with good optical transparency in the visible to near infrared region.The sheet resistance of the films can be significantly reduced by annealing in vacuum and reach 58 k?with a light transmittance of 68.69%at 550 nm.The conductive transparent properties of the reduced graphene oxide thin films would be useful to develop flexible electronics.     

Microstructure and properties of Nb/Ta multilayer films irradiated by a high current pulse electron beam

Nb/Ta multilayer films deposited on Ti6Al4V substrate with Nb and Ta monolayer thicknesses of 30 nm, 120 nm, and 240 nm were irradiated by a high current pulse electron beam (HCPEB) to prepare Nb-Ta alloyed layers. The microstructure and the composition of the outmost surface of melted alloyed layers were investigated using a transmission electron microscope (TEM) equipped with an X-ray energy dispersive spectrometer (EDS) attachment. The Ta content of the alloyed surface layer prepared from the monolayer of thickness 30 nm, 120 nm, and 240 nm was ～ 27.7 at.%, 6.37 at.%, and 0 at.%, respectively. It was found that the Ta content in the alloyed layer plays a dominant role in the microstructure of the films. The hardness and the wear rate of the alloyed layers decrease with the increasing content of Ta in the surface layer.     

In-situ monitoring of EuTiO_3 and SrTiO_3 film growth using time-resolved X-ray scattering during pulsed-laser deposition

Time-resolved X-ray scattering was employed to in-situ monitor the epitaxial growth process of the thin films and multilayers of EuTiO3 and SrTiO3 during pulsed laser deposition. The temporal intensity oscillations of the reflected X-rays at auti-Bragg position and the transient processes following the flux pulses were observed. The temporal intensity oscillations were used to control the film thickness, and the reflectivity along the crystal truncation rod was used to measure both the film thickness and the surface/interface roughness. The primary features of the X-ray intensity oscillations were reproduced via simulating the experimental data using diffusive rate equation model. Several mechanisms of determining the X-ray intensity features were discerned.     

Characterization of Microarc Oxidation Process on Aluminium Alloy

The specific features of electric current variation against time were studied by keeping the anode and cathode pulse voltage to be constant. The maximum thickness of the films fabricated by microarc oxidation was found to be closely related to the voltage. The surface morphology of the coatings can be divided into different stages according to the variation of electric current. A method for obtaining high micro hardness coating has been discussed.     

Dependence of Structure and Haemocompatibility of Amorphous Carbon Films on Substrate Bias Voltage

Tetrahedral amorphous hydrogenated carbon (ta-C:H) films on Si(lO0) substrates were prepared by using a magnetic-field-filter plasma stream deposition system. Samples with different ratios of sp^3-bond to sp^2-bond were obtained by changing the bias voltage applied to the substrates. The ellipsometric spectra of various carbon films in the photon energy range of 1.9-5.4eV were measured. The refractive index n and the relative sp^3 C ratio of these films were obtained by simulating their ellipsometric spectra using the Forouhi-Bloomer model and by using the Bruggeman effective medium approximation, respectively. The haemocompatibility of these ta-C:H films was analysed by observation of platelet adhesion and measurement of kinetic clotting time. The results show that the sp^3 C fraction is dependent on the substrate bias voltage, and the haemocompatibility is dependent on the ratio of sp^3-bond to sp^2-bond. A good haemocompatibility material of ta-C:H films with a suitable sp^3 C fraction can be prepared by changing the substrate bias voltage.     

Optical and magnetic properties of porous anodic alumina films embedded with Co nanowires

A simple method to tune the optical properties of porous anodic alumina （PAA） films embedded with Co nanowires （PAA@Co nanocomposite films） is reported in this paper. The films exhibit vivid structural colors and magnetic properties. The optical properties of the films can be effectively tuned by adjusting the thickness of the PAA template. The deposition of Co nanowires greatly increases the color saturation of the PAA films. The theoretical results of the changes in structural color according to the Bragg-Snell formula are consistent with the experimental results. PAA@Co films can be used in many areas, including decoration, display, and multifunctional anti-counterfeiting applications.     

Magnetic behaviors of cerium oxide-based thin films deposited using electrochemical method

Zn and Co multi-doped CeO2 thin films have been prepared using an anodic electrochemical method. The structures and magnetic behaviors are characterized by several techniques, in which the oxygen states in the lattice and the absorptive oxygen bonds at the surface are carefully examined. The absorptive oxygen bond is about 50% of the total oxygen bond by using a semi-quantitative method. The value of actual stoichiometry δ is close to 2. The experimental results indicate that the thin films are of a cerium oxide-based solid solution with few oxygen vacancies in the lattice and many absorptive oxygen bonds at the surface. Week ferromagnetic behaviors were evidenced by observed M–H hysteresis loops at room temperature. Furthermore, an evidence of relative ferromagnetic contributions was revealed by the temperature dependence of magnetization. It is believed that the ferromagnetic contributions exhibited in the M–H loops originate from the absorptive oxygen on the surface rather than the oxygen vacancies in the lattice.     

Preparation of Diamond—Like carbon Films in methane by Electron Cyclotron Resonance Microwave Plasma Source Ion Implantation

Diamond-like carbon(DLC)films were prepared on Si(100) substrates by ion implantation from an electron cyclotron resonance microwave plasma source.During the implantation,650W microwave power was used to produce discharge plasma with methane as working gas,and-20KV voltage pulses were applied to the substrate holder to accelerate ions in the plasma.Confocal Raman spectra confirmed the DLC characteristics of the films.Fourier-transform infrared characterization indicates that the DLC films were composed of sp^3 and sp^2 carbonbonded hydrogen.The hardness of the films was evaluated with a Nano Indenter-XP System.The result shows that the highest hardness valus was 14.6 GPa.The surface rms roughness of the films was as low as 0.104nm measured with an atomic force microscope.The friction coeffcient of the films was checked using a ball-on-disk microtribometer.The average friction coefficient is approximately 0.122.     

Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering

Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the sam- ples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300-400℃, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photolumines- cence spectra, and the origin of blue emission was investigated.     

Three different low-temperature plasma-based methods for hydrophilicity improvement of polyethylene films at atmospheric pressure

Three different low-temperature plasma-based methods were used to improve the surface hydrophilicity of polyethy- lene （PE） films, and all the modification processes were carried out by employing an atmospheric pressure plasma jet （APPJ） system. （a） PE films were directly modified by APPJ using a gas mixture of He and 02. （b） Acrylic acid （AA） was introduced into the system and a polymer acrylic acid （PAA） coating was deposited onto the PE films. （c） AA was grafted onto the PE surface activated by plasma pre-treatment. It was found that the hydrophilicity of the PE films was significantly improved for all the three methods. However, the samples modified by Process （a） showed hydrophobicity recovery after a storage time of 20 days while no significant change was found in samples modified by Process （b） and Process （c）. The Fourier transform infrared spectroscopy （FTIR） results indicated that the most intensive C=O peak was detected on the PE surface modified by Process （c）. According to the X-ray photoelectron spectroscopy （XPS） analysis, the ratios of oxygen-containing polar groups for samples modified by Process （b） and Process （c） were higher than that modified by Process （a）.     

Effects of half-wave and full-wave power source on the anodic oxidation process on AZ91D magnesium alloy

Anodic films have been prepared on the AZ91D magnesium alloys in 1 mol/L Na₂SiO₃ with 10 vol.% silica sol addition under the constant voltage of 60 V at room temperature by half-wave and full-wave power sources. The weight of the anodic films has been scaled by analytical balance, and the thickness has been measured by eddy current instrument. The surface morphologies, chemical composition and structure of the anodic films have been characterized by scanning electron microscopy (SEM), energy dispersion spectrometry (EDS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results show that the thickness and weight of the anodic films formed by the two power sources both increase with the anodizing time, and the films anodized by full-wave power source grow faster than that by half-wave one. Furthermore, we have fitted polynomial to the scattered data of the weight and thickness in a least-squares sense with MATLAB, which could express the growth process of the anodic films sufficiently. The full-wave power source is inclined to accelerate the growth of the anodic films, and the half-wave one is mainly contributed to the uniformity and fineness of the films. The anodic film consists of crystalline Mg₂SiO₄ and amorphous SiO₂.     

XPS and AES studies of anodic passive films grown on chromium electrodes in sulphuric acid baths

The surface composition and the thickness of anodic passive films formed on chromium electrodes in sulphuric acid baths have been studied by XPS and AES using Ar⁺—ion sputtering. The results are consistent with a 13–16-Å thick oxide layer of composition close to Cr₂O₃. Some evidence is also given concerning hydrated species located in the outermost part of the passive film.     

The growth mechanism and supercapacitor study of anodically deposited amorphous ruthenium oxide films

In the present study, ruthenium oxide (RuO₂) thin films were deposited on the stainless steel (s.s.) substrates by anodic deposition. The nucleation and growth mechanism of electrodeposited RuO₂ film has been studied by cyclic voltammetry (CV) and chronoamperometry (CA). The deposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive analysis by X-rays (EDAX) for structural, morphological, and compositional studies. The electrochemical supercapacitor study of ruthenium oxide thin films have been carried out for different film thicknesses in 0.5 M H₂SO₄ electrolyte. The highest specific capacitance was found to be 1190 F/g for 0.376 mg/cm² film thickness.     

Formation of highly textured (1 1 1) Bi2O3 films by anodization of electrodeposited bismuth films

Highly textured bismuth oxide (Bi₂O₃) thin films have been prepared using anodic oxidation of electrodeposited bismuth films onto stainless steel substrates. The Bi₂O₃ films were uniform and adherent to substrate. The Bi₂O₃ films were characterized for their structural and electrical properties by means of X-ray diffraction (XRD), electrical resistivity and dielectric measurement techniques. The X-ray diffraction pattern showed that Bi₂O₃ films are highly textured along (1 1 1) plane. The room temperature electrical resistivity of the Bi₂O₃ films was 10⁵ Ω cm. Dielectric measurement revealed normal oxide behavior with frequency.     

Interface of anodic sulfide-oxide on n-type InSb

A novel anodic sulfidization process for forming native sulfide-oxide films on n-type InSb is described. The results of Auger electron spectroscopy analysis indicate that native sulfide-oxide films are formed from aqueous sulfide solutions. The measured capacitance-voltage characteristics of metal-insulator-semiconductor devices indicate that the films have a low fixed surface charge density of the order of 3×10¹⁰ cm^–2 and small hysteresis. The native sulfide-oxide films leave the surface of n-type InSb practically at flatband and in this respect are superior to the passivation layers of anodic oxide and direct plasma SiN _x . The interface between InSb and its native sulfide-oxide in combination with plasma CVD SiN _x has excellent electrical properties.     

Structure and dielectric properties of ultra-thin ZrO<Subscript>2</Subscript> films for high-<Emphasis Type="Italic">k</Emphasis> gate dielectric application prepared by pulsed laser deposition

ZrO₂ thin films have been prepared on Pt-coated silicon substrates and directly on n-Si(100) substrates by the pulsed laser deposition (PLD) technique using a ZrO₂ ceramic target under different deposition conditions. X-ray diffraction showed that the films prepared at 400 °C in 20 Pa oxygen ambient remained amorphous. Differential thermal analysis was carried out to study the crystallization behavior of ZrO₂. The dielectric constant of ZrO₂ was determined to be around 24 by measuring a Pt/ZrO₂/Pt capacitor structure. Sputtering depth profile X-ray photoelectron spectroscopy was used to investigate the interfacial characteristics of ZrO₂/n-Si stacks. A Zr silicate interfacial layer was formed between the ZrO₂ layer and the silicon substrate. The equivalent oxide thickness (EOT) and leakage current densities of the films with 6.6 nm physical thickness post-annealed in O₂ and N₂ ambient were investigated. An EOT of 1.65 nm with a leakage current of 36.2 mA/cm² at 1 V gate voltage for the film post-annealed in N₂ has been obtained. ZrO₂ thin films prepared by PLD have acceptable structure and dielectric properties required by a candidate material of high-k gate dielectrics. PACS 77.55.+f; 81.15.Fg; 73.40.Qv     

Effect of poly silicon thickness on the formation of Ni-FUSI gate by using atomic layer deposited nickel film

The effect of poly-Si thickness on silicidation of Ni film was investigated by using X-ray diffraction, auger electron spectroscopy, cross-sectional scanning transmission electron microscopy, resistivity, I–V, and C–V measurements. The poly-Si films with various thickness of 30–200 nm were deposited by LPCVD on thermally grown 50 nm thick SiO₂, followed by deposition of Ni film right after removing the native oxide. The Ni film was prepared by using atomic layer deposition with a N²-hydroxyhexafluoroisopropyl-N¹ (Bis-Ni) precursor. Rapid thermal process was then applied for a formation of fully silicide (FUSI) gate at temperature of 500 °C in N₂ ambient during 30 s. The resultant phase of Ni-silicide was strongly dependent on the thickness of poly-Si layer, continuously changing its phase from Ni-rich (Ni₃Si₂) to Si-rich (NiSi₂) with increasing the thickness of the poly-Si layer, which is believed to be responsible for the observed flat band voltage shift, ΔV_FB, in C–V curves.     

A study of the oxidation of tantalum nitride by ellipsometry and auger electron spectroscopy

Ellipsometry and Auger electron spectroscopy in conjunction with in-situ ion sputtering have been used to study the thermal and anodic oxidation of thin tantalum nitride (Ta₂N) resistor films which are used in microelectronic circuits. In addition, the effects of thermal oxidation on the resistor-conductor contact resistance and conductor adhesion have been investigated.Thermal oxide thickness and stoichometry were estimated by Auger electron spectroscopy. A more accurate determination of oxide thickness was obtained by using multiple angle-of incidence ellipsometry. The thermal oxide was found to demonstrate a parabolic growth rate, in agreement with other workers. It was determined that the contact resistance should not be adversely affected by oxidation of the tantalum nitride at room temperature for storage times of several months; no significant decrease in the conductor adhesion was observed for oxide thicknesses up to 8 nm.A significant difference in the stoichiometry and refractive index of the thermally and anodically oxidized films was found, however. Depletion of the nitrogen from the surface of the anodically oxidized Ta₂N films resulted in an increase in the refractive index of the anodic oxide layer to a value close to that of pure Ta₂O₅.     

RAFT “grafting-through” approach to surface-anchored polymers: Electrodeposition of an electroactive methacrylate monomer

The synthesis of homopolymer and diblock copolymers on surfaces was demonstrated using electrodeposition of a methacrylate-functionalized carbazole dendron and subsequent reversible addition-fragmentation chain transfer (RAFT) “grafting-through” polymerization. First, the anodically electroactive carbazole dendron with methacrylate moiety (G1CzMA) was electrodeposited over a conducting surface (i.e. gold or indium tin oxide (ITO)) using cyclic voltammetry (CV). The electrodeposition process formed a crosslinked layer of carbazole units bearing exposed methacrylate moieties. This film was then used as the surface for RAFT polymerization process of methyl methacrylate (MMA), styrene (S), and tert-butyl acrylate (TBA) in the presence of a free RAFT agent and a free radical initiator, resulting in grafted polymer chains. The molecular weights and the polydispersity indices (PDI) of the sacrificial polymers were determined by gel permeation chromatography (GPC). The stages of surface modification were investigated using X-ray photoelectron spectroscopy (XPS), ellipsometry, and atomic force microscopy (AFM) to confirm the surface composition, thickness, and film morphology, respectively. UV-Vis spectroscopy also confirmed the formation of an electro-optically active crosslinked carbazole film with a p \pi - p^* \pi^{{\ast}}_{} absorption band from 450-650nm. Static water contact angle measurements confirmed the changes in surface energy of the ultrathin films with each modification step. The controlled polymer growth from the conducting polymer-modified surface suggests the viability of combining electrodeposition and grafting-through approach to form functional polymer ultrathin films.     

Polymer Surface Functionalization Using Plasma,Ultraviolet and Synchrotron Radiation

Polyurethane (PU) and polystyrene (PS) films were functionalized by ultraviolet (UV) or selective synchrotron radiations (SR) in the presence of reactive gases. The UV-PU results were compared with lowpressure plasma treatments of the same films. Oxygen or acrylic acid vapours (AA) were used as reactive gases. X-ray photoelectron spectroscopy measurements of UV modified films in the presence of oxygen or AA matched the RF-plasma treatments results. It is shown that COO and C=O functional groups were incorporated at the polymer surface efficiently with both methodologies. In addition, near-edge X-ray absorption fine structure showed that a thin film of poly(acrylic acid) is formed over the PU and PS films during the UV irradiation in the presence of AA vapours. These results resemble previous AA low-power plasma treatments. PU and PS films were also selectively functionalized by SR using oxygen as reactive gas. Surface concentrations of COO and C=O functional groups were enhanced by C_1s → σ* _C–C excitation after irradiation and oxygen introduction. This efficient surface functionalization was clearly observed in PS films which do not have CO and COO groups in their molecular structure. Excitations involving transitions to π* orbital (π*_C=C, π*_C=O) led to much lower functionalization efficiency. The SR results can be explained by taking into account previous photon stimulated ion desorption studies of polymers. SR results may open new ways to functionalize polymer surfaces selectively and efficiently.