具有阻尼项的非线性波动方程的相似约化

利用Clarkson和Kruskal引入的直接约化法,给出了具有阻尼项的非线性波动方程u_tt-2bu_xxt+αu_xxxx=β(uⁿ_x)x(α>0,β≠0,n≥2)三种类型的相似约化.从这些约化方程的Painlevé分析表明该方程在Ablowitz的猜测意义下是不可积的.此外还获得了该方程(n=2)的4种精确类孤波解. 关键词： 波动方程 相似约化 Painlevé分析 精确解     

耦合Burgers方程的对称性及对称约化

对称性分析是自然科学研究中的重要方法之一. 利用对称性分析研究了一个描述两层流体体系的模型即耦合Burgers方程的对称性. 利用对称性给出了这个模型的四种对称性约化并给出了这些约化方程的一些特殊的严格解,如有理解、行波孤立子解和非行波孤立子解. 关键词： 对称性约化 耦合Burgers方程 孤立子     

Zn Belavin模型反射方程的多参数解

利用A_(n－1)⁽¹⁾面模型反射方程的对角解,得到了ZnBelavin模型反射方程的含有n+1个参数的解.当n=2时,其结果与侯伯宇等人给出的8项角反射方程的解是一致的.     

溶液法制备Tl_mBa_2Ca_nCu_(n+1)O_y超导膜

本文采用溶液浸涂法制备 Tl-Ba-Ca-Cu-O 系超导晶相 Tl_mBa_2Ca_nCu_(n+1)O_y(m=1,2;n=1,2).研究了组分与晶相之间的关系,并提出晶相控制参量 Tl/Ba,当 Tl/Ba>0.7时,可以得到 m=2的双铊氧面超导相;当 Tl/Ba<0.7时,可以得到 m=1的单铊氧面超导相.阐述了溶液法制备高 T_c 氧化物超导膜的特点.所得的双铊氧面超导膜厚度约2μm,T_(c0) 约110K,J_c 可大于10~4A/cm~2.     

转动区偶偶核正宇称态的八极关联效应

运用了Usdpf(16)相互作用玻色子模型讨论了八极自由度P和f玻色子对转动区偶偶核正宇称态的效应.结果表明,偶数个P和f玻色子的组态能够混入到通常的基态带,β和γ振动带,并且自然地形成Kπ=1+、3+等转动带.这一结果与Usdg(15)-IBM相类似.本文还简要地给出了基态带间的E2约化跃迁几率,其结果与Usd(6)-IBM相一致.     

An－1(1)面模型反射方程的多参数解

利用面型因式化L算子,通过An－1(1)面模型反射方程的对角解,构造了一个含有n+1个任意参数的非对角解.     

基于U(1)对称的无限矩阵乘积态张量网络算法提取Luttinger液体参数K

本文数值研究了自旋S=1/2, 1, 2的各向异性量子XXZD模型的Luttinger液体参数K.首先,利用U (1)对称的无限矩阵乘积态算法(iMPS)得到在Luttinger液体相中的基态波函数.通过二分量子涨落F和有限纠缠标度指数κ的关系可以提取出Luttinger液体参数K.对于自旋S=1/2, D=0的量子XXZD模型,本文利用U (1)对称的iMPS的算法得到的数值结果与精确解符合得很好.在参数D≤-2的区域,自旋S=1的XXZD模型的哈密顿量可以被映射到一个自旋S=1/2的有效XXZ模型,本文计算了在这个区域内的Luttinger液体参数K与精确解基本是一致的,相对误差小于1%.此外,在参数?=-0.5, D=0处,本文数值计算的Luttinger液体参数与密度矩阵重整化群(DMRG)的结果也是一致的.这些研究结果表明:当系统具有U (1)对称性时,利用U (1)对称的iMPS的方法可以提取无能隙相中的Luttinger液体参数.本文利用此方法还研究了自旋S=1的XXZD模型在其他参数下的Luttinger液体参数,以及自旋S=2的XXZD模型的Luttinger液体参数.     

K(m,n)方程与B(m,n)方程的无穷序列新精确解

进一步研究了辅助方程法,给出了几种常用辅助方程的新解、B(a|¨)cklund变换和解的非线性叠加公式.在此基础上,根据m和n的不同情况,利用变换和直接积分相结合的方法,获得了K(m,n)方程与B(m,n)方程的无穷序列新精确解.这里包括无穷序列光滑孤立子解、无穷序列尖峰孤立子解和无穷序列紧孤立子解.     

n体聚集过程和联合聚集过程的集团尺寸分布

本文研究n体聚集过程和联合聚集过程的集团分布演化。从广义Smoluchovki方程出发,给出聚集核K(i₁,i₂,…,i_n)=A sumfrom i=1 to n i₁+B(A,B均为常数)的显解;利用聚集核K(i₁,i₂,…,i_n)=(Ai₁+B)(Ai₂+B)…(Ai_n+B)和核K(i₁,i₂,…,i_n)=A sumfrom i=1 to n i₁+B的方程之间的联系,得出核K(i₁,i₂,…,i_n)=S_(i1)S_(i2)…S_(in)(S_K=AK+B)的凝前解。而且,根据联合聚集动力学方程,讨论了聚集和型核分别为K₂(i,j)=i+j,K₃(i,j,k)=i+j+k的集团尺寸分布C_m(t)的长时行为,并将结论推广到一般的联合聚集过程。 关键词：     

Gam Pn和Gam P-n团簇结构及其光电子能谱的理论研究

采用密度泛函理论中B3LYP泛函方法,在6-31 G*水平上,对GamPn(m+n≤5)团簇及其阴离子的几何构型和振动光谱性质进行了研究.在相同水平下计算了GamP-n(m+n≤5)的垂直电离能和GamPn(m+n≤5)的绝热电子亲核势.结果表明:单线态稳定结构有较高的对称性,二重态的稳定结构对称性相对较低.     

核磁共振碳谱研究:烷烃化学位移和(CSS)与分子路径指数矢量(VPM)

系统研究了核磁共振碳谱和化学位移规律及其定量构谱关系(QSSR).本文研究了一组十元素分子路径指数矢量VPM,并发现它与烷烃化学位移和CCS有良好线性相关性.采用多元线性回归进行准确估计与预测,结果优良.     

Reduced s-d model with antiferromagnetically coupled impurity spins

An antiferromagnetic equivalent-neighbour Heisenberg interaction H_i between impurity spins is added to the reduced s-d Hamiltonian H_r previously introduced by simplifying the Kondo s-d exchange Hamiltonian H_K. Asymptotic mean-field theory is developed for H_r + H_i, in the presence and absence of external magnetic field, and applied to (La_1−xCe_x)Al₂ alloys. Specific heat c_i(T) and zero-field susceptibility χ_i(0,T) curves for (La_1−xCe_x)Al₂ are depicted. The coupling constants of H_r + H_i and conduction bandwidth are adjusted so that T_c temperatures for x = 0.2, 0.1 are equal to the experimental values. c_i(T) exhibits a jump at T_c and is decreasing for T < T_c. χ_i(0,T) has a first order pole at T_c which corresponds to the maximum of experimental susceptibility and χ_i(0,0) > 0. These results improve those obtained earlier on the grounds of H_r theory.     

Interrelations of discrete Painlevé equations through limiting procedures

We study the discrete Painlevé equations associated to the affine Weyl group which can be obtained by the implementation of a special limits of -associated equations. This study is motivated by the existence of two -associated discrete both having a double ternary dependence in their coefficients and which have not been related before. We show here that two equations correspond to two different limits of a -associated discrete Painlevé equation. Applying the same limiting procedures to other -associated equations we obtained several -related equations most of which have not been previously derived.     

What can we learn from B→DsKπ, Bd→DsKπ and Bd→DsK decays?

We study the nonresonant three-body decays of B⁺→D^(*)−_sK⁺π⁺ and B_d→D_s^(*)−K⁰π⁺. We find that these decays can provide the information on the time-like form factors of D^(*)_sK. We also explicitly investigate B_d→D_s^(*)−K^*+ decays by discriminating the nonresonant contributions with the unknown D^(*)_s wave functions being fixed by the measured mode of B_d→D_s⁻K⁺.     

稠苯芳杂环及其烷基质子化学位移的计算

本文提出了予测稠苯芳杂环及其烷基链上质子化学位移的计算方法。 将稠苯芳杂环化合物用凯库勒式表示,计算式为为需考虑的苯环内的乙烯基效应。σ_mi,ci为各苯环的环流效应。σ_1,Hc为各芳杂环的屏蔽效应,对杂环上质子它就是该单独芳杂环上相应质子的δ值,对苯环上质子要将它分解为各结构因素的效应,即:σ_1,He=(1/2)^d-1δ_x=y(或σ_z)+σ_c-c·σ_m,H. σ_x-y与σ_z为杂原子或其基团的屏蔽效应,σ_c=c为存在于芳杂环中的乙烯基的效应,σ_m,Hc为芳杂环的环流效应,d为对不同质子所考虑的键数。有取代基时需考虑取代基的效应。计算环上烷基质子的公式为:δ=σ_p,CH3+ασ_c,CH3+βσ_t,CH3+σ_l,G σ_l,G为稠苯芳杂环基的某级效应。     

Structural phase transitions at clean and metal-covered Si(111) surfaces investigated by RHEED spot analysis

Structural phase transitions between various kinds of superlattice structures formed on a Si(111) surface have been investigated by spot analysis of reflection high-energy electron diffraction (RHEED). Reversible transitions induced by temperature changes and irreversible ones induced by metal depositions were observed. Detailed discussions on the dynamics of the phase transitions are made by quantitative analyses of integrated spot intensity and profile. For a phase transition of 7′7  1′1 structures on a clean Si(111) surface, a hysteresis with temperature difference of 5°C. between in heating and cooling processes was found in the spot intensity change, indicating a first-order transition. Hysteresis was hardly recognized, on the other hand, for transitions of Au-induced superstructures (5×2-Au or ×-Au)  1×1-Au. The spot profiles were found to be broadened during the transition of Si(111)-×-Au  1×1-Au, which was a signature of a continuous transition, while the profiles remained unchanged during the transitions of the 7×7  1×1 and 5×2-Au  1×1-Au phases. Structural conversions induced by In adsorption on the Si(111) surface kept at constant temperatures were also analyzed. The conversions at room temperature were totally dependent on the initial substrate surface structures; the 7×7 surface did not show any structural conversion with In adsorption, while the ×-In surface successively converted to a 2×2 and a × phase with coverage increase. The structural transitions at elevated temperatures were sensitively dependent on the temperatures. Sequences of transitions among the 7×7, 4×1, ×, 1×, and ×4 were quantitatively revealed as changes in RHEED spot intensity.     

Interband Stark effects in InxGa1−xAs/InyAl1−yAs coupled step quantum wells

The effects of an electric field on the interband transitions in In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum wells have been investigated both experimentally and theoretically. A In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well sample consisted of the two sets of a 50 Å In_0.53Ga_0.47As shallow quantum well and a 50 Å In_0.65Ga_0.35As deep step quantum well bounded by two thick In_0.52Al_0.48As barriers separated by a 30 Å In_0.52Al_0.48As embedded potential barrier. The Stark shift of the interband transition energy in the In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well is larger than that of the single quantum well, and the oscillator strength in the In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well is larger than that in a coupled rectangular quantum well. These results indicate that In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum wells hold promise for potential applications in optoelectron devices, such as tunable lasers.     

ErP5O14非晶玻璃的红外量子剪裁

研究了Er_1.0P₅O₁₄铒非晶玻璃的红外量子剪裁现象. 从吸收谱和激发光谱的计算比较中肯定了Er_1.0P₅O₁₄非晶 玻璃的1537.0 nm红外荧光为多光子量子剪裁荧光. 从Er_1.0P₅O₁₄非晶玻璃的可见和红外荧光发射光谱中发现激发²H_11/2, ⁴G_11/2和⁴G_9/2能级所导致的⁴I_13/2→⁴I_15/2量子剪裁红外荧光很强;基于自发辐射速率、无辐射弛豫速率和能量传递速率等参数的计算,对其量子剪裁机理进行了分析.发现起源于基态的强下转换能量传递{²H_11/2→⁴I_9/2,⁴I_15/2→⁴I_13/2},{⁴G_11/2→⁴I_13/2, ⁴I_15/2→²H_11/2},{⁴G_9/2→⁴F_7/2,⁴I_15/2→⁴I_13/2}和{⁴G_9/2→⁴I_13/2, ⁴I_15/2→²H_11/2}是导致Er_1.0P₅O₁₄非晶玻璃具有强的三光子和四光子量子剪裁红外荧光的原因.研究结果对改善太阳能电池效率有一定意义.