Doctor-bladed Cu2ZnSnS4 light absorption layer for low-cost solar cell application

The doctor-blade method is investigated for the preparation of Cu₂ZnSnS₄ films for low-cost solar cell application. Cu₂ZnSnS₄ precursor powder, the main raw material for the doctor-blade paste, is synthesized by a simple ball-milling process. The doctor-bladed Cu₂ZnSnS₄ films are annealed in N₂ ambient under various conditions and characterized by X-ray diffraction, ultraviolent/vis spectrophotometry, scanning electron microscopy, and current-voltage (J-V) meansurement. Our experimental results indicate that (i) the X-ray diffraction peaks of the Cu₂ZnSnS₄ precursor powder each show a red shift of about 0.4°; (ii) the high-temperature annealing process can effectively improve the crystallinity of the doctor-bladed Cu₂ZnSnS₄, whereas an overlong annealing introduces defects; (iii) the band gap value of the doctor-bladed Cu₂ZnSnS₄ is around 1.41 eV; (iv) the short-circuit current density, the open-circuit voltage, the fill factor, and the efficiency of the best Cu₂ZnSnS₄ solar cell obtained with the superstrate structure of fluorine-doped tin oxide glass/TiO₂/In₂S₃/Cu₂ZnSnS₄/Mo are 7.82 mA/cm², 240 mV, 0.29, and 0.55%, respectively.     

Band alignment of Ga2O3/6H-SiC heterojunction

A high-quality Ga₂O₃ thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga₂O₃/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy. The energy band diagram of the Ga₂O₃/6H-SiC heterojunction is obtained by analysing the binding energies of Ga 3d and Si 2p at the surface and the interface of the heterojunction. The valence band offset is experimentally determined to be 2.8 eV and the conduction band offset is calculated to be 0.89 eV, which indicate a type-II band alignment. This provides useful guidance for the application of Ga₂O₃/6H-SiC electronic devices.     

Spectroscopic studies of interfacial structures of CeO2-TiO2 mixed oxides

We have investigated the geometric and electronic structures of the cerium oxide (CeO₂)-titanium dioxide (TiO₂) mixed oxides with various Ce/TiO₂ weight ratios prepared by the sol-gel method in detail by means of X-ray diffraction (XRD), high-resolution X-ray photoelectron spectroscopy (XPS), Raman spectroscopy excited by 325 and 514.5 nm lasers, and scanning electron microscope (SEM). Existence of cerium effectively inhibits the phase transition of TiO₂ from the anatase phase to the rutile phase. XRD peaks of TiO₂ anatase attenuate continuously with the increasing amount of CeO₂ in the mixed oxide, but the XRD peaks of cubic CeO₂ appear only after the weight ratio of Ce/TiO₂ reaches 0.50. The average crystalline sizes of TiO₂ anatase and cubic CeO₂ in CeO₂-TiO₂ mixed oxides are smaller than those in the corresponding individual TiO₂ anatase and cubic CeO₂. Raman spectroscopy excited by the 514.5 nm laser detects CeO₂ after the weight ratio of Ce/TiO₂ reaches 0.70 whereas Raman spectroscopy excited by the 325 nm laser detects CeO₂ after the weight ratio of Ce/TiO₂ reaches 0.90. XPS results demonstrate that Ti exists in the form of Ti⁴⁺ in the CeO₂-TiO₂ mixed oxide. Ce is completely in the form of Ce³⁺ in the mixed oxides with a 0.05 weight ratio of Ce/TiO₂. With the increasing weight ratio of Ce/TiO₂, Ce⁴⁺ dominates. On basis of these results, we proposed that CeO₂ initially nucleates at the defects (oxygen vacancies) within TiO₂ anatase, forming an interface bridged with oxygen between CeO₂ and TiO₂ anatase. At the interface, Ce species cannot substitute Ti⁴⁺ in the lattice of TiO₂ anatase whereas Ti⁴⁺ can substitute Ce⁴⁺ in the lattice of cubic CeO₂. The decreasing concentration of oxygen vacancies, the Ti-O-Ce interface, and the decreasing average crystalline size of TiO₂ anatase act to inhibit the phase transformation of TiO₂ anatase. With the increasing amounts of CeO₂, the CeO₂ clusters continuously grow and form cubic CeO₂ nanocrystals. Spectroscopic results strongly demonstrate that the surface region of CeO₂-TiO₂ mixed oxide is enriched with TiO₂.     

甲醇分子在金红石TiO2(110)和锐钛矿TiO2(001)表面吸附和反应的活性位点

通过高分辨的扫描隧道显微术研究并比较了金红石型TiO₂(110)-(1×1)和锐钛矿型TiO₂(001)-(1×4)两种表面的活性位点． 在金红石型TiO₂(110)-(1×1)表面, 观察到氧空位缺陷是O₂和CO₂分子的活性吸附位点,而五配位的Ti原子是水分子和甲醇分子的光催化反应活性位点．在锐钛矿型TiO₂(001)-(1×4)表面,观察到完全氧化的表面,Ti原子更可能是六配位的,H₂O和O₂分子均不易在这些Ti原子上吸附．经还原后表面出现富Ti的缺陷位点, 这些缺陷位点对H₂O和O₂分子表现出明显的活性． 锐钛矿型TiO₂(001)-(1×4)表面的吸附和反应活性并不具有很高的活性,某种程度上其表现出的活性似乎低于金红石型TiO₂(110)-(1×1)表面．     

Cocktail effect of Fe2O3 and TiO2 semiconductors for a high performance dye-sensitized solar cell

The bi-semiconductors of TiO₂ and Fe₂O₃ were used as a photoelectrode material in a high performance dye-sensitized solar cell due to cocktail effects from the two conduction bands. The size of the semiconductors was reduced by using a paint shaker to enlarge the contact area of the semiconductor with the dye or electrolyte. The fill factor and the efficiency of the prepared dye-sensitized solar cell were improved by over 16% and 300%, respectively; these parameters were measured from a current-voltage curve that was based on the effects of the Fe₂O₃ co-semiconductor and the size reduction. A mechanism is suggested wherein the conduction band of Fe₂O₃ works to prohibit the trapping effects of electrons in the conduction band of TiO₂. This result is attributed to the prevention of electron recombination between electrons in the TiO₂ conduction band with dye or electrolytes. The mechanism is suggested based on impedance results, which indicate improved electron transport at the interface of the TiO₂/dye/electrolyte.     

Surface state of TiO2 treated with low ion energy plasma

The effect of low pressure radio frequency (rf) plasma treatment on TiO₂ surface states has been studied using X-ray photoelectron spectroscopy. Three different oxidation states of oxygen in untreated TiO₂ powder were observed, which suggests the existence of adsorbed water and carbon on the surface. The ratio of oxygen to titanium (O/Ti) was decreased for the low ion dose plasma treated samples due to desorption of water from the surface. In the case of Ti 2p about 20% of surface states were converted to Ti³⁺ 2p_3/2 state after plasma treatment with a very good stability, whereas untreated TiO₂ remained mostly as Ti⁴⁺ state. A rapid decrease in the ratio of carbon to titanium (C/Ti) at TiO₂ surface was also observed after plasma treatment and more than 90% of carbon atoms were removed from the surface. Therefore, the plasma treatment of TiO₂ has advantages to surface carbon cleaning, increasing O⁻ and Ti³⁺ surface states, hence improving the activity of TiO₂ for different environmental, energy and biological applications.     

A density functional theory study on the adsorption and dissociation of N2O on Cu2O(1 1 1) surface

Density functional theory has been employed to investigate the adsorption and the dissociation of an N₂O at different sites on perfect and defective Cu₂O(1 1 1) surfaces. The calculations are performed on periodic systems using slab model. The Lewis acid site, Cu_CUS, and Lewis base site, O_SUF are considered for adsorption. Adsorption energies and the energies of the dissociation reaction N₂O → N₂ + O(s) at different sites are calculated. The calculations show that adsorption of N₂O is more favorable on Cu_CUS adsorption site energetically. Cu_CUS site exhibits a very high activity. The Cu_CUS-N₂O reaction is exothermic with a reaction energy of 77.45 kJ mol⁻¹ and an activation energy of 88.82 kJ mol⁻¹, whereas the O_SUF-N₂O reaction is endothermic with a reaction energy of 205.21 kJ mol⁻¹ and an activation energy of 256.19 kJ mol⁻¹. The calculations for defective surface indicate that O vacancy cannot obviously improve the catalytic activity of Cu₂O.     

Effect of calcination temperature on the structure and hydroxylation activity of Ni0.5Cu0.5Fe2O4 nanoparticles

Nanocrystalline Ni_0.5Cu_0.5Fe₂O₄ was synthesized by sol-gel method with varying calcination temperature over the range of 500-1000. The powders obtained were characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). In addition, thermal analysis (TG-DTG-DTA) of the precursor was carried out. The study reveals the simultaneous decomposition and ferritization process at rather low temperature (280-350). For the crystalline structure investigated, single cubic spinel is gained when the precursor was decomposed at 800-1000, whereas separated crystal CuO formed when calcination temperature is below 800. The increase of calcination temperature favors the appearance of Fe_B³⁺, Cu_A²⁺ and O on the spinel surface. The hydroxylation activity is relative to the amount of Cu_B²⁺ species on the spinel surface. The lattice oxygen species on the spinel surface are favorable for the deep oxidation of phenol.     

Oxygen vacancy in N-doped Cu2O crystals: A density functional theory study

The N-doping effects on the electronic properties of Cu2O crystals are investigated using density functional theory. The calculated results show that N-doped Cu2O with or without oxygen vacancy exhibits different modifications of electronic band structure. In N anion-doped Cu2O, some N 2p states overlap and mix with the O 2p valence band, leading to a slight narrowing of band gap compared with the undoped Cu2O. However, it is found that the coexistence of both N impurity and oxygen vacancy contributes to band gap widening which may account for the experimentally observed optical band gap widening by N doping.     

FePc与TiO2(110)及C60界面电子结构研究

基于C₆₀受体和有机分子给体的太阳能电池是目前非常重要的一个研究热点, 利用同步辐射真空紫外光电子能谱(SRUPS) 技术研究了酞菁铁(FePc)与TiO₂(110)及C₆₀的界面电子结构, 以及FePc与C₆₀分子混合薄膜的电子结构. SRUPS价带谱显示, FePc沉积在化学计量比与还原态两种不同的TiO₂(110)表面时, FePc分子的HOMO能级均随FePc厚度的变化发生了移动, 而在化学计量比的TiO₂(110)表面位移较大, 同时发生界面能带弯曲, 说明存在从有机层向衬底的电子转移. 在FePc/C₆₀和C₆₀/FePc界面形成过程中, FePc与C₆₀分子的最高占据分子轨道(HOMO)位移大小基本相同. 由界面能级排列发现, 在FePc与C₆₀的混合薄膜中, FePc分子的HOMO与C₆₀分子的最高占据分子轨道能级差较大, 这有利于提高器件开路电压, 改善器件性能.     

Bifunctional photocatalysis of TiO2/Cu2O composite under visible light: Ti in organic pollutant degradation and water splitting

Photocatalytic experiment results under visible light demonstrate that both TiO₂ and Cu₂O have low activity for brilliant red X-3B degradation and neither can produce H₂ from water splitting. In comparison, TiO₂/Cu₂O composite can do the both efficiently. Further investigation shows that the formation of Ti³⁺ under visible light has great contribution. The mechanism of photocatalytic reaction is proposed based on energy band theory and experimental results. The photogenerated electrons from Cu₂O were captured by Ti⁴⁺ ions in TiO₂ and Ti⁴⁺ ions were further reduced to Ti³⁺ ions. Thus, the photogenerated electrons were stored in Ti³⁺ ions as the form of energy. These electrons trapped in Ti³⁺ can be released if a suitable electron acceptor is present. So, the electrons can be transferred to the interface between the composite and solution to participate in photocatalytic reaction. XPS spectra of TiO₂/Cu₂O composite before and after visible light irradiation were carried out and provided evidence for the presence of Ti³⁺. The image of high-resolution transmission electron microscopy demonstrates that TiO₂ combines with Cu₂O tightly. So, the photogenerated electrons can be transferred from Cu₂O to TiO₂.     

N掺杂Cu2O薄膜的光学性质及第一性原理分析

采用射频磁控溅射技术, 在不同温度下制备了N掺杂Cu₂O薄膜．透射光谱分析发现, N掺杂导致Cu₂O成为允许的带隙直接跃迁半导体, 并使Cu₂O的光学禁带宽度增加．不同温度下沉积的薄膜光学禁带宽度E_g=2.52± 0.03 eV．第一性原理计算表明, N掺杂导致Cu₂O的禁带宽度增加了约25%, 主要与价带顶下移和导带底上移有关, 与实验报道基本符合．N的2p电子态分布不同于O原子, 在价带顶附近具有较大的态密度是N掺杂Cu₂O变成允许的带隙直接跃迁半导体的根本原因．     

Formation and characterization of the Cu2O overlayer on Zn-terminated ZnO(0 0 0 1)

Low-energy electron diffraction, X-ray photoelectron spectroscopy and synchrotron-radiation-excited angle-resolved photoelectron spectroscopy have been used to characterize Cu-oxide overlayers on the Zn-terminated ZnO(0 0 0 1) surface. Deposition of Cu on the ZnO(0 0 0 1)-Zn surface results in the formation of Cu clusters with (1 1 1) top terraces. Oxidation of these clusters by annealing at 650 K in O₂ atmosphere (1.3 × 10⁻⁴ Pa) leads to an ordered Cu₂O overlayer with (1 1 1) orientation. Good crystallinity of the Cu₂O(1 1 1) overlayer is proved by energy dispersion of one of Cu₂O valence bands. The Cu₂O(1 1 1) film exhibits a strong p-type semiconducting nature with the valence band maximum (VBM) of 0.1 eV below the Fermi level. The VBM of ZnO at the Cu₂O(1 1 1)/ZnO(0 0 0 1)-Zn interface is estimated to be 2.4 eV, yielding the valence-band offset of 2.3 eV.     

Influence of overcoat on laser-induced damage threshold of 532 and 800 nm TiO2/SiO2 high reflectors

TiO₂/SiO₂ high reflectors with and without a SiO₂ overcoat are deposited by electron-beam evaporation. The film properties are characterized by visible spectrometry measures, structure analysis, roughness and laser-induced damage threshold (LIDT) tests, surface defects and damage morphology observation. The effects of overcoats on LIDT at 532 nm, 8 ns and 800 nm, 220 ps laser pulses are investigated. The relations between film structure, roughness, surface defects, electric field and LIDT are discussed. It is found that overcoats can increase the LIDT at these two laser wavelengths. The reduction of peak temperature, the low defects density and roughness, the low intrinsic absorption of SiO₂ and its amorphous structure are the main reasons for LIDT improvement by overcoats.     

Investigations on co-evaporated Cu2SnSe3 and Cu2SnSe3-ZnSe thin films

Cu₂SnSe₃ is an important precursor material for the growth of Cu₂ZnSnSe₄, an emerging solar cell absorber layer via solid state reaction of Cu₂SnSe₃ and ZnSe. In this study, we have grown Cu₂SnSe₃ (CTSe) and Cu₂SnSe₃-ZnSe (20%) films onto soda-lime glass substrates held at 573 K by co-evaporation technique. The effect of annealing of these films at 723 K for an hour in selenium atmosphere is also investigated. XRD studies of as-deposited Cu₂SnSe₃ and Cu₂SnSe₃-ZnSe films indicated SnSe as secondary phase which disappeared on annealing. The direct optical band gap of annealed Cu₂SnSe₃ and Cu₂SnSe₃-ZnSe films were found to be 0.90 eV and 0.94 eV respectively. Raman spectroscopy studies were used to understand the effect of ZnSe on the properties of Cu₂SnSe₃.     

Development of rf plasma sputtered Al2O3-TiO2 multilayer broad band antireflecting coatings and its correlation with plasma parameters

TiO₂/Al₂O₃/TiO₂/Al₂O₃ multilayer structures were obtained at different oxygen:argon gas ratios of 20:80, 30:70, 50:50 and 60:40 sccm and constant rf power of 200 W using reactive magnetron sputtering. Grain size and elemental distribution in the films were studied from AFM image and XPS spectra respectively. The deposited grain size increased with increasing oxygen:argon gas ratio. The optical band gap, refractive index, extinction coefficient were calculated from UV-vis transmittance and reflectance spectra. It was observed that the value of refractive index, extinction coefficient and band gap increased with increasing oxygen. These variations are due to the defects levels generated by the heterostructure and explained by the PL spectrum. The antireflecting (AR) efficiency of the films was estimated from the reflectance spectra of the films. Broad band antireflecting coating for the visible range was achieved by varying oxygen content in the film. The plasma chemistry controlled the antireflecting property by the interface interdiffusion of atoms during layer transition in multilayer deposition. The in situ investigation of the plasma chemistry was performed using optical emission spectroscopy. The plasma parameters were estimated and correlated with the characteristics of the films.     

Preparation and photoelectrochemical performance of Ag/graphene/TiO2 composite film

By dipping-lifting in sol-gel solution and reducing process, the graphene/TiO₂ composite film on the glass plate was first prepared. Then, the Ag/graphene/TiO₂ composite film was fabricated by interface reaction with AgNO₃ and N₂H₄·H₂O on the surface of graphene/TiO₂ composite film. The characterization results show that the uniform porous TiO₂ film is made up of the anatase crystal, and the Ag/graphene/TiO₂ composite film is constructed by doping or depositing graphene sheets and Ag nanoparticles on the surface of TiO₂ film. The photoelectrochemical measurement results indicate that the Ag/graphene/TiO₂ composite film has an excellent photoelectrochemical conversion property.     

Photoluminescence characterization of polycrystalline n-type Cu2O films

Electrodeposition was used to deposit Cu₂O thin films on ITO substrates. Photoresponse of the film clearly indicated n-type behavior of Cu₂O in photoelectrochemical cells. The temperature dependence of photoluminescence (PL) revealed that the spectra consist of donor-acceptor pair emissions and the recombination between electrons bound to donors and free holes. We observed that the dominant intrinsic defect, oxygen vacancies, creates a donor energy level at 0.38 eV below the bottom of the conduction band. As a result, this donor level acts as a center for both PL emissions and to produce n-type conductivity in the electrodeposited Cu₂O films. In addition, an acceptor energy level at 0.16 eV from the top of the valence band was observed.     

Synthesis, structure and optical properties of Eu/TiO2 nanocrystals at room temperature

The nanocrystal samples of titanium dioxide doped with europium ion (Eu³⁺/TiO₂ nanocrystal) are synthesized by the sol-gel method with hydrothermal treatment. The Eu³⁺ contents (molar ratio) in the samples are 0, 0.5%, 1%, 2%, 3% and 4%. The X-ray diffraction, UV-Vis spectroscopy data and scanning electron microscope image show that crystallite size is reduced by the doping of Eu³⁺ into TiO₂. Comparing the Raman spectra of TiO₂ with Eu³⁺/TiO₂ (molar ratio Eu³⁺/TiO₂=1%, 2% and 4%) nanocrystals at different annealing temperatures indicates that the anatase-to-rutile phase transformation temperatures of Eu³⁺/TiO₂ nanocrystals are higher than that of TiO₂. This is due to the formation of Eu-O-Ti bonds on the surface of the TiO₂ crystallite, as characterized by the X-ray photoelectron spectroscopy. The photoluminescence spectra of TiO₂ in Eu³⁺/TiO₂ nanocrystals are interpreted by the surface self-trapped and defect-trapped exciton relaxation. The photoluminescence of Eu³⁺ in Eu³⁺/TiO₂ nanocrystals has the strongest emission intensity at 2% of Eu³⁺ concentration.     

锐钛矿型TiO2(101)面本征点缺陷的理论研究

采用平面波超软赝势方法计算了锐钛矿型TiO₂(101)面存在本征空位和间隙点缺陷的几何结构以及缺陷形成能.首先分析了点缺陷对表面结构的影响,发现不同类型缺陷导致缺陷周围原子有不同的位移趋势：O空位的产生导致空位周围的Ti原子向空位外移动,Ti₁和Ti₂空位的产生均使O₁自发地与周围的O原子团聚,O_i原子易被周围的氧原子吸附而成键,而Ti_i2缺陷几乎 关键词： 第一性原理 2')" href="#">TiO₂ 点缺陷 表面结构