外压下VN相变和力学性质的第一性原理研究

运用基于赝势平面波基组的密度泛函程序VASP并结合Quantum ESPRESSO,Phonopy软件包对压力下VN的结构、力学性质、声子色散关系进行了第一性原理的研究.分别对Na Cl型(B1),Cs Cl型(B2),WC型(Bh)三种构型的VN进行了计算,三种结构的体积能量曲线、焓压关系和声子谱表明在常压下六角WC结构与立方结构相比更稳定.随着压力增加VN由Bh结构到B1结构的相变发生在30 GPa左右,而B1结构到B2结构的相变可能发生在150 GPa左右.常压下三种结构的VN是力学稳定的,其弹性常数和弹性模量都有随压强的增大而增加的趋势,三者都是脆性材料.B1结构和B2结构坐标基矢方向上的杨氏模量数值与体对角线方向上的差距较大,体现出明显的各向异性.随压力的增加B1结构各向异性程度增大而B2结构各向异性程度减小.     

外压下VN相变和力学性质的第一性原理研究

运用基于赝势平面波基组的密度泛函程序VASP并结合Quantum ESPRESSO,Phonopy软件包对压力下VN的结构、力学性质、声子色散关系进行了第一性原理的研究.分别对NaCl型（B1）,CsCl型（B2）,WC型（Bh）三种构型的VN进行了计算,三种结构的体积能量曲线、焓压关系和声子谱表明在常压下六角WC结构与立方结构相比更稳定.随着压力增加VN由Bh结构到B1结构的相变点发生在30GPa左右,而B1结构到B2结构的相变点可能发生在150GPa左右.常压下三种结构的VN是力学稳定的,其弹性常数和弹性模量都有随压强的增大而增加的趋势,三者都是脆性材料.B1结构和B2结构坐标基矢方向上的杨氏模量数值与体对角线方向上的差距较大,体现出明显的各向异性.随压力的增加B1结构各向异性程度增大而B2结构各向异性程度减小     

压力下CaN_2结构稳定性和电子结构的第一性原理研究

通过运用基于密度泛函理论的第一性原理计算方法结合广义梯度近似对压力下CaN_2的结构稳定性和电子结构进行了理论研究.对结构稳定性的研究表明,ZnCl_2型结构是CaN_2在环境压力下最稳定的结构,而实验上观察到的CaC_2-I型结构是CaN_2高压下(8.7 GPa)的稳定性结构.在50 GPa的压力范围内,CaN_2将发生从ZnCl_2型结构到ThC_2型结构再到CaC_2-I型结构的两次压致结构相变,其相变压力分别为0.81 GPa和8.77 GPa.而对电子结构的研究表明ZnCl_2型、ThC_2型和CaC_2-I型三种结构的CaN_2都表现出了金属特征,三种结构CaN_2当中Ca-N键的离子-共价性特征和N原子间的N=N双键特征得到了确认.     

CeO_2纳米八面体高压结构相变的Raman研究(英文)

利用高压原位拉曼光谱技术研究了非静水条件对CeO2纳米八面体高压结构相变的重压影响。研究表明:在非静水条件下(无传压介质),当压力达到26 GPa时,CeO2纳米八面体发生由立方萤石型结构到正交α-PbCl2型结构的可逆结构相变,相变压力低于相应的体材料(30 GPa)。相反,在准静水压条件下,CeO2纳米八面体的相变压力为33 GPa,高于其体材料。研究表明,实验条件对CeO2纳米八面体结构稳定性具有重要影响。     

高压下LiF和NaF的结构稳定性及其电子和光学性质的第一性原理研究

基于密度泛函理论，采用全势线性缀加平面波加局域轨道方法，计算模拟了LiF高压下的相变行为，预测其在450GPa附近发生由NaCl结构(B1)到CsCl结构(B2)的结构相变.同时还计算了高压下LiF不同相的电学特性，LiF的复介电函数以及介电常数随压强变化关系.通过比较能带结构的变化行为，得出LiF在53GPa附近还存在等结构相变，即由直接带隙结构变为间接带隙结构.将LiF的计算结果与另外一个同构化合物NaF进行了比较讨论. 关键词： LiF 压致相变 从头计算     

冲击波诱导Nd_2Fe_(14)B磁相变的理论计算研究

根据Nd2Fe14B的冲击加载实验,计算了3.3—7.2 GPa压力范围内冲击波阵面上压力与温度的关系.基于分子场理论,引入压力等效场,改进了双亚点阵理论模型,并分析了在不同温度和压力下Nd2Fe14B的磁性转变机理.计算了压力对Nd2Fe14B磁致伸缩系数、磁化率、磁化强度以及居里温度的影响,给出了Nd2Fe14B发生铁磁–顺磁相变的压力和温度判据.计算结果表明:压力使Nd2Fe14B的居里温度逐渐向低温区转移,当压力从0 GPa增加到1.15 GPa时,居里温度从584 K降至292 K;随着压力的增加,Nd2Fe14B的磁化强度不断下降,且临界去磁压力随温度的升高呈下降趋势;在3.3—7.2 GPa压力范围内,Nd2Fe14B发生了铁磁-顺磁相变.     

MgS晶体结构性质的密度泛函研究

采用基于密度泛函理论(DFT)基础上的第一性原理赝势平面波方法对MgS晶体四种构型(B1，B2，B3，B4)的体相性质进行了系统研究.计算结果表明，B1构型的晶体是间接带隙型半导体，而B2，B3和B4构型的晶体则是直接带隙型材料，其中B2构型的带隙宽度最窄，其值为0.42eV.在压力不超过200.3GPa时，B1构型的MgS 晶胞是最稳定的，当压力大于该值时，会发生B1构型到B2构型的转化. 关键词： MgS 第一性原理赝势平面波方法 电子结构 转化压力     

SmN晶体的电子结构和高压相变的第一性原理

利用基于密度泛函理论的第一性原理,研究了SmN晶体的电子结构和高压相变. SmN晶体的电子结构具有半金属特征,多数自旋电子显示金属导电性,少数自旋电子显示半导体导电性. 高压相变的结果显示,SmN晶体经历从NaCl型(B1)到CsCl型(B2)结构转变的压致结构相变,相变压力117 GPa. 弹性系数的结果显示,在环境压力下SmN晶体的弹性系数满足玻恩稳定条件,标志着B1相是力学稳定结构. 声子谱结果显示,在环境压力下B1相是热力学稳定结构,与弹性系数的计算结果一致.     

六角相B-C-N化合物的高压相变研究

采用原位高压同步辐射能散X射线衍射和金刚石压砧技术,实验研究了新型超硬材料六角相B0.47C0.23N0.30的高压相变及物理特性,压力范围为1.4～30 GPa.实验结果表明,六角相B..47C0.23N0.30在14.9 GPa压力下发生了相变,形成的新相为六方纤锌矿结构.计算得到了具有六方纤锌矿结构的B0.47C...     

高压下钡的硫化物的结构相变和光学性质研究(英文)

利用基于密度泛函的第一性原理,计算了高压下钡的硫化物(BaS、BaSe和BaTe)的结构相变和光学性质。计算结果表明,这些化合物的压致结构相变是从NaCl型结构转变为CsCl型结构;对于结构转变压力和金属化转变压力,BaS为8.57 GPa和45.4 GPa,BaSe为7.44 GPa和36.5 GPa,BaTe则分别为5.67 GPa和16.7 GPa。光学性质计算结果显示:随着压力的增加,静态介电常数ε0不断增加,介电常数虚部ε2的峰值向高能方向移动(蓝移)。     

Effect of deposition and annealing temperature on mechanical properties of TaN film

Tantalum nitride films (TaN) were synthesized by microwave ECR-DC sputtering. The effects of deposition and annealing temperature on mechanical properties of TaN films were investigated. Cross-section pattern, microstructure and binding energy of the films were investigated by scanning electron microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. Mechanical properties were evaluated using nano-indentation and scratch tester. The results showed that the maximal hardness value of approximately 40 GPa was deposited in the TaN sample at 573 K. While the preparation temperature decreased, the hardness, modulus and adhesion of TaN film also decreased. Hardness and modulus also decreased with the increase in annealing temperature. Meanwhile the adhesion strength was also sensitive to the annealing temperature, with a maximum adhesion strength of 40 N measured in the TaN film annealed at 448 K. The results demonstrated that a desirable mechanical property of TaN films deposited by DC reactive magnetron sputtering can be obtained by controlling the deposition and annealing temperature.     

Full potential calculation of structural, elastic properties and high-pressure phase of binary noble metal carbide: ruthenium carbide

We present in this paper the results of an ab initio theoretical study within the local density approximation (LDA) to determine in rock-salt (B1), cesium chloride (B2), zinc-blende (B3), and tungsten carbide (WC) type structures, the structural, elastic constants, hardness properties and high-pressure phase of the noble metal carbide of ruthenium carbide (RuC).The ground state properties such as the equilibrium lattice constant, elastic constant, the bulk modulus, its pressure derivative, and the hardness in the four phases are determined and compared with available theoretical data. Only for the three phases B1, B3, and WC, is the RuC mechanically stable, while in the B2 phase it is unstable, but in B3 RuC is the most energetically favourable phase with the bulk modulus 263 GPa, and at sufficiently high pressure (P_t=19.2 GPa) the tungsten carbide (WC) structure would be favoured, where ReC-WC is meta-stable.The highest bulk modulus values in the B3, B2, and WC structures and the hardnesses of H(B3)=36.94 GPa, H(B1)=25.21 GPa, and H(WC)=25.30 GPa indicate that the RuC compound is a superhard material in B3, and is not superhard in B1 and WC structures compared with the H(diamond)=96 GPa.     

Effect of interface layer on growth behavior of atomic-layer-deposited Ir thin film as novel Cu diffusion barrier

Growth and nucleation behavior of Ir films grown by atomic layer deposition (ALD) on different interfacial layers such as SiO₂, surface-treated TaN, and 3-nm-thick TaN were investigated. To grow Ir thin film by ALD, (1,5-cyclooctadiene) (ethylcyclopentadienyl) iridium (Ir(EtCp)(COD)) and oxygen were employed as the metalorganic precursor and reactant, respectively. To obtain optimal deposition conditions, the deposition temperature was varied from 240 to 420 °C and the number of deposition cycles was changed from 150 to 300. The Ir film grown on the 3-nm-thick TaN surface showed the smoothest and most uniform layer for all the deposition cycles, whereas poor nucleation and three-dimensional island-type growth of the Ir layer were observed on Si, SiO₂, and surface-treated TaN after fewer number of deposition cycles. The uniformity of the Ir film layer was maintained for all the different substrates up to 300 deposition cycles. Therefore we suggest that the growth behavior of the Ir layer on different interface layer is related to the chemical bonding pattern of the substrate film or interface layer, resulting in better understand the growth mechanism of Ir layer as a copper diffusion barrier. The ALD-grown Ir films show the preferential direction of (1 1 1) for all the reflections, which indicates the absence of IrO₂ in metallic Ir.     

Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering

TaN thin film is an attractive interlayer as well as a diffusion barrier layer in [FeN/TaN]_n multilayers for the application as potential write-head materials in high-density magnetic recording. We synthesized two series of TaN films on glass and Si substrates by using reactive radio-frequency sputtering under 5-mtorr Ar/N₂ processing pressure with varied N₂ partial pressure, and carried out systematic characterization analyses of the films. We observed clear changes of phases in the films from metallic bcc Ta to a mixture of bcc Ta(N) and hexagonal Ta₂N, then sequentially to fcc TaN and a mixture of TaN with N-rich phases when the N₂ partial pressure increased from 0.0% to 30%. The changes were associated with changes in the grain shapes as well as in the preferred crystalline orientation of the films from bcc Ta [100] to [110], then to random and finally to fcc TaN [111], correspondingly. They were also associated with a change in film resistivity from metallic to semiconductor-like behavior in the range of 77–295 K. The films showed a typical polycrystalline textured structure with small, crystallized domains and irregular grain shapes. Clear preferred (111) stacks parallel to the substrate surface with embedded amorphous regions were observed in the film. TaN film with [111]-preferred orientation and a resistivity of 6.0 mΩ cm was obtained at 25% N₂ partial pressure, which may be suitable for the interlayer in [FeN/TaN]_n multilayers. Received: 6 December 1999 / Accepted: 24 July 2000 / Published online: 9 November 2000     

高能等离子体辅助CVD法新型纳米碳膜的制备及分析

利用自制高能等离子体辅助化学气相沉积设备在1Cr18Ni9Ti衬底上，在离子能量2keV、工作压力2Pa、工作气氛为CH₄/H₂=10%的工艺条件下得到了一种硬度高、导电性能良好、可能具有碳链结构的新型碳膜.工艺研究结果表明，衬底材料对制备该新型纳米碳膜具有关键作用，离子能量、工作压力及气氛等工艺因素也具有重要作用.原子力显微镜分析结果表明，该薄膜晶粒尺寸小于100nm，薄膜光滑、致密、均匀.拉曼光谱分析显示，该薄膜的拉曼光谱特征为中心峰在1580cm ^{关键词： 高能等离子体 CVD法 纳米碳膜 衬底材料}     

The structure of liquid SnTe under pressure

We investigated the structure of liquid SnTe at high pressures up to 8.2 GPa by energy-dispersive x-ray diffraction. On melting at low pressures, the crystalline B1 structure changed into not B1-like but distorted-B1-like local structure. We also found that the structure changes at around 1.6-3.3 GPa. At high pressures, the bond angle and coordination number approached those for B2-based structure, but still showed clear deviations from B2-like local structure.     

Inter-diffusion study in MgO tunneling magneto-resistive (TMR) system by XPS

In this paper, we investigated the elemental inter-diffusion in MgO TMR system, namely, between MgO barrier and free layer (CoFeB, NiFe or their combination) interface and the oxygen diffusion into the capping layers (Ta, Ru, TaN) at elevated temperatures using simple sheet film stack to simplify the results interpretation. Boron, cobalt, iron, and nickel show various diffusion tendencies into the MgO barrier after annealing the sheet film stack. Oxygen has different penetration depth into single CoFeB free layer upon annealing under N₂ + Ar protective atmosphere for different capping layers. Ru and TaN capping layer provide much better O₂ diffusion barrier, compared with Ta capping layer. This could potentially change the boron segregation tendency at free layer and capping layer interface and thus affect the interface crystallization process and lattice matching between the crystallized CoFeB free layer and the MgO(0 0 1) barrier layer. All these effects will impact the overall TMR performance.     

FP-LMTO investigations of mechanical stability and high pressure of platinum nitride compounds

We report local density functional calculations using the full potential linear muffin-tin orbital (FP-LMTO) method for binary platinum nitride (PtN), in five different crystal structures, the rock salt (B1), zinc-blende (B3), wurtzite (B4), nickel arsenide (B8), and PbS (B10) phases. The ground state properties such as the equilibrium lattice constant, elastic constants, the bulk modulus and its pressure derivative of PtN in these phases are determined and compared with the other available experimental and theoretical works.Our calculations confirm in the B3 structure that PtN is found to be mechanically stable with a large bulk modulus B=232.45 GPa and at a sufficiently high pressure the B8₁ structure would be favoured.The theoretical transition pressure from zinc blende (B3) to NiAs (B8₁), zinc-blende (B3) to rock-salt (B1) and zinc-blende (B3) to PbO (B10) is determined to be 9.10 GPa, 9.85 GPa and 69.35 GPa, respectively. Our calculation shows also in five different structures for PtN a high bulk modulus is a good indicator of a hard material.     

High-Pressure Behavior of Nano Titanium Dioxide

Nanocrystalline rutile Titanium dioxide has been studied by X-ray diffraction at ambient temperature up to 47.4 GPa. The material is found to transform to the monoclinic baddeleyite structure between 20 and 30 GPa, which is higher than the corresponding pressure range for bulk material. Upon decompression, the baddeleyite phase transforms to the f -PbO 2 phase at about 4-2 GPa. The experimental bulk moduli are 211(7) GPa for the rutile phase, 235(16) for the baddeleyite type and 212(25) GPa for the f -PbO 2 type phase. The results are compared with previous measurements of bulk rutile Titanium dioxide.