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1.
我们通过固态反应法制备了MgxB2(x=0.2,0.6,0.8,1.0,1.2,1.4,1.8,2.2,2.6)系列超导样品.用四引线法测量了每一个样品在制备烧结过程中的高温R~T曲线.由这些曲线的升温阶段数据得知MgxB2系列样品的起始成相温度Tonset随着x值的增加而降低.由它们的X光衍射图可知,x≤1.0时,没有Mg和MgO的杂相峰;到x>1.0后,随x值的增大,杂相Mg和MgO的衍射峰强度逐渐增强.它们的低温R~T曲线表明随x值的增加,正常态电阻减小,起始超导转变温度在39.3 K到39.9 K之间.综合Tc(onset)和△Tc,Mg1.4B2样品呈现出最好的超导状态.这些样品的单位质量M~T测量数据表明起起转变温度处于37.4~38.6 K之间,且Mg1.4B2样品呈现出最高的磁测Tc(onset)=38.60 K.在Mg含量x大于或低于1.4时,磁测Tc(onset)均小于此值.综合R~T和M~T这两种测量,为得到高Tc的MgB2超导块材,胚体MgB2的配比应取x=1.4为好. 相似文献
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利用电泳技术在不锈钢和铁基底上制备MgB2带材 总被引:2,自引:0,他引:2
本文首次报道了利用电泳技术在铁和不锈钢基底上制备MgB2超导带材.电阻测量表明,沉积在铁和不锈钢基底上MgB2带材的超导零电阻转变温度分别为37.5K和31K,超导转变宽度分别为0.3K和1K.磁测量表明,(5K,OT)时不锈钢基底上带材的临界电流密度为6×105(A/cm2).X射线衍射谱和扫描电子显微镜图象表明样品结晶良好,晶粒生长致密.本工艺制备MgB2带材时不受系统真空度的限制,生长迅速,成本低廉,并且可以根据不同的需要任意选择基底的形状和大小. 相似文献
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采用In-Situ PIT方法,以工业级低纯度B粉(92%)和镁粉(99%)为原料制备了19芯Fe/Cu复合包套MgB2超导线。断面扫描电镜观测表明,超导线内部超导芯分布排列均匀,Fe层都能完好包围MgB2芯体,Fe与Cu层结合紧密,填充因子0.17。750℃热处理1h后,样品超导转变温度Tc(onset)=33.5K,转变宽度ΔTc=4.8K。X光衍射检测发现,MgB2超导相中不存在其它Mg-B化合物杂项,但含有少量MgO和FeB2。多芯化后,超导芯中FeB2略有增加。四引线Ic测试发现,19芯样品在4.2K,4T时,临界电流密度为5622A/cm2,比单芯样品14400 A/cm2降低约2/3。 相似文献
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本文报道了利用化学气相沉积技术制备MgB2超导薄膜.首先在MgO(111)基片上化学气相沉积一层B膜,然后在Mg蒸气环境下对B膜进行后退火处理.退火后得到的MgB2薄膜在MgO(111)基片上呈随即取向生长,Mg、B原子比接近于1∶2.4;薄膜表面光滑致密,晶粒粒度约为0.5μm.电阻测量和直流磁测量表明薄膜超导转变温度为38K,转变宽度仅为0.1K.毕恩公式计算结果显示MgB2薄膜的临界电流密度在0T、10K时高达2×107A/cm2. 相似文献
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报道了用两步法制备MgB2超导薄膜.首先利用脉冲激光沉积技术制备B膜,然后在Mg蒸气环境下对B膜进行后退火处理,通过扩散反应生成MgB2超导薄膜.采用扫描电子显微镜、x射线衍射、电阻测量和磁测量技术分析了前驱物B膜的制备温度对扩散产物MgB2薄膜的表面形貌、晶体结构、超导转变温度和临界电流密度的影响.结果表明,随着B膜制备温度的降低,MgB2薄膜中晶粒粒度减小、c取向的衍射线宽化、超导转变温度升高、临界电流密度增大.300℃时制备的MgB2超导薄膜的超导起始转变温度为395K,临界电流密度为13×107A
关键词:
MgB2超导薄膜
脉冲激光沉积
基片温度 相似文献
7.
混合物理化学气相沉积法制备Al2O3衬底MgB2薄膜性质的研究 总被引:1,自引:0,他引:1
我们用混合物理化学气相沉积(Hybrid Physical-Chemical Vapor Deposition简称为HPCVD)法在Al2O3(00l)衬底上原位制备了MgB2超导薄膜样品.样品厚度约为1μm左右,最高的超导起始转变温度Tc(onset)=40.3K,转变宽度ΔT为0.3K.ρ50K=2.3μΩcm,剩余电阻比率RRR=R300K/R50K=10.样品的X射线衍射分析表明,MgB2薄膜具有较好的c轴取向,晶粒大小约200nm.由毕恩模型计算求得在5K和零场条件下,样品的临界电流密度Jc=7.6×106A/cm2,不同磁场下测得R~T曲线可以外推得到Hc2(0K)约10T.这些结果表明HPCVD技术在MgB2薄膜原位制备方面有着很大的优势,从而有利于实现MgB2薄膜在电子器件方面的应用. 相似文献
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采用一种新的Mg扩散方法,在常压下成功制备出致密的MgB2超导块材,样品密度最高达1.95 g/cm3,并得到了最佳的热处理条件.采用X射线衍射仪(XRD),扫描电镜(SEM)和超导量子干涉仪(MPMS)分别对样品的物相,微观结构和超导性能进行了表征.结果表明:纯的MgB2在5×10-3 T的外场下,起始超导转变温度(Tc)为38.1 K,转变宽度仅0.9 K;10 K自场下临界电流密度(Jc)值达0.53 MA/cm2.此外,纳米Pr6O11或C掺杂能显著改善MgB2的实用化性能,其中15at.%C掺杂的MgB2(MgB1.85C0.15)在10 K,6 T下,Jc高达104 A/cm2. 相似文献
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我们用混和物理化学气相沉积法(HPCVD)在不锈钢衬底上原位制备了以MgB2厚膜(约10微米厚)为过渡层的MgB2超导厚膜(约20微米厚)样品,两层膜总厚约30微米.X光衍射实验表明过渡层为(101)取向的织构膜,表层MgB2超导厚膜接近多晶膜,但有较强(101)取向,两者均含有少量的Mg和MgO杂相.此超导厚膜样品的Tc(onset)=37.8K,Tc(zero)=36.6K,ΔT=1.2K.对此样品的弯曲实验表明,以曲率半径500微米弯曲到180°后,样品仍具有Tc(onset)=37.8K,Tc(zero)=36.4K的超导电性.样品剖面SEM观测表明该膜结构致密,表面厚膜层和过渡层之间连接紧密.样品表面的SEM观测表明虽然样品弯曲导致表面MgB2超导厚膜面出现了裂缝,甚至有小部分膜面的脱落,但过渡层始终紧紧附着在不锈钢衬底上.这表明过渡层MgB2厚膜的存在大大地提高样品整体的柔韧性,展现了不锈钢衬底上的MgB2厚膜超导带(线)巨大的开发潜力和诱人的广阔应用前景. 相似文献
11.
Superconductivity in dense MgB2 wires 总被引:11,自引:0,他引:11
Canfield PC Finnemore DK Bud'ko SL Ostenson JE Lapertot G Cunningham CE Petrovic C 《Physical review letters》2001,86(11):2423-2426
MgB2 becomes superconducting just below 40 K. Whereas porous polycrystalline samples of MgB2 can be synthesized from boron powders, in this Letter we demonstrate that dense wires of MgB2 can be prepared by exposing boron filaments to Mg vapor. The resulting wires have a diameter of 160 microm, are better than 80% dense, and manifest the full chi = -1/4pi shielding in the superconducting state. Temperature-dependent resistivity measurements indicate that MgB2 is a highly conducting metal in the normal state with rho(40 K) = 0.38 microOmega cm. By using this value, an electronic mean-free path, l approximately 600 A can be estimated, indicating that MgB2 wires are well within the clean limit. Tc, Hc2(T), and Jc data indicate that MgB2 manifests comparable or better superconducting properties in dense wire form than it manifests as a sintered pellet. 相似文献
12.
以B4C和Mg为原料合成的MgB2-B4C复相超导体具有高的临界电流密度(Jc)和高的超导转变温度(Tc),是一种有潜力的实用MgB2超导材料,其成相机理对复相MgB2超导体的相含量调控和磁通钉扎研究具有重要意义。结合经典烧结理论,研究了B4C-Mg真空固相烧结制备MgB2-B4C复相超导体的超导相形成和晶粒生长过程,给出了B4C-Mg的金斯特林格扩散模型和MgB2晶粒生长过程。通过选择B4C原料粒径,MgB2-B4C复相超导体超导相体积相含量在18%-88%范围可控。相含量88%的MgB2-B4C复相超导体临界转变温度达33.5K,转变宽度1.5K。10 K环境6T外场下电流密度可以达到1×104A/cm2,表明MgB2-B4C复相超导体具有良好的磁通钉扎行为。 相似文献
13.
Singh PP 《Physical review letters》2006,97(24):247002
We study the effects of pressure on the electron-phonon interaction in MgB2 using density-functional-based methods. Our results show that the superconductivity in MgB2 vanishes by 100 GPa, and then reappears at higher pressures. In particular, we find a superconducting transition temperature Tc approximately 2 K for mu*=0.1 at a pressure of 137 GPa. 相似文献
14.
Thermodynamic and transport properties of superconducting Mg10B2 总被引:6,自引:0,他引:6
Finnemore DK Ostenson JE Bud'ko SL Lapertot G Canfield PC 《Physical review letters》2001,86(11):2420-2422
Transport and thermodynamic properties of a sintered pellet of the newly discovered MgB2 superconductor have been measured to determine the characteristic critical magnetic fields and critical current densities. Both resistive transition and magnetization data give similar values of the upper critical field, Hc2, with magnetization data giving dHc2/dT = 0.44 T/K at the transition temperature of Tc = 40.2 K. Close to the transition temperature, magnetization curves are thermodynamically reversible, but at low temperatures the trapped flux can be on the order of 1 T. The value of dHc/dT at Tc is estimated to be about 12 mT/K, a value similar to classical superconductors like Sn. Hence, the Ginzburg-Landau parameter kappa approximately 26. Estimates of the critical supercurrent density, Jc, using hysteresis loops and the Bean model, give critical current densities on the order of 10(5) A/cm2. Hence the supercurrent coupling through the grain boundaries is comparable to intermetallics like Nb3Sn. 相似文献
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MgB2超导电性的发现及新一轮高临界温度超导研究热潮 总被引:6,自引:0,他引:6
2001年1月10日,在日本召开的学术会议上,Aoyama Gakuin大学的J.Akimitsu教授宣布和MgB2显现超导电性(Tc=39K),紧接着一系列研究工作表明,MgB2属于BCS超导体,这些发现引起了新一轮高临界温度超导研究热潮。 相似文献
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本文综述了实用化MgB2超导材料的最新研究进展.最新的理论和实验结果表明通过元素替代和掺杂,有希望进一步提高MgB2超导线带材的临界电流密度和磁通钉扎特性,完全可以达到实用化要求.目前MgB2超导磁体的制备技术研究已经开始,极有可能开发出采用闭路循环制冷机制冷的核磁共振成像仪(MRI)取代现在医学上使用的基于低温超导的核磁共振成像系统. 相似文献
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Putti M Affronte M Ferdeghini C Manfrinetti P Tarantini C Lehmann E 《Physical review letters》2006,96(7):077003
We report specific heat measurements on neutron-irradiated MgB2 samples, for which the critical temperature is lowered to 8.7 K, but the superconducting transition remains extremely sharp, indicative of a defect structure extremely homogeneous. Our results evidence the presence of two superconducting gaps in the temperature range above 21 K, while single-gap superconductivity is well established as a bulk property, not associated with local disorder fluctuations, when Tc decreases to 11 K. 相似文献
19.
Boron isotope effect in superconducting MgB2 总被引:16,自引:0,他引:16
Bud'ko SL Lapertot G Petrovic C Cunningham CE Anderson N Canfield PC 《Physical review letters》2001,86(9):1877-1880
We report the preparation method of and boron isotope effect for MgB2, a new binary intermetallic superconductor with a remarkably high superconducting transition temperature T(c)(10B) = 40.2 K. Measurements of both temperature dependent magnetization and specific heat reveal a 1.0 K shift in T(c) between Mg11B2 and Mg10B2. Whereas such a high transition temperature might imply exotic coupling mechanisms, the boron isotope effect in MgB2 is consistent with the material being a phonon-mediated BCS superconductor. 相似文献