Auger recombination and charge-carrier thermalization in Hg - n -cluster photoelectron studies

Photoelectron spectra (PES) of Hg(-)(n) show strong dependence of spectral features on photon energy, i.e., peak tailing and band gap filling. This dependence suggests the existence of complex photoinduced processes in parallel with the direct photodetachment process. The "corrupted" PES, taken with intermediate photon energy, carry the signature of interband absorption followed by charge-carrier thermalization and Auger electron ejection in Hg(-)(n). These processes, so significant in the photophysics of bulk semiconductors and nanoparticles, have not yet been identified in clusters.     

Global minimum determination of the Born-Oppenheimer surface within density functional theory

We present a novel method, which we refer to as the dual minima hopping method, that allows us to find the global minimum of the potential energy surface (PES) within density functional theory for systems where a fast but less accurate calculation of the PES is possible. This method can rapidly find the ground state configuration of clusters and other complex systems with present day computer power by performing a systematic search. We apply the new method to silicon clusters. Even though these systems have already been extensively studied by other methods, we find new global minimum candidates for Si16 and Si19, as well as new low-lying isomers for Si16, Si17, and Si18.     

The origin of narrowing of the Si 2p coincidence photoelectron spectroscopy main line of Si(1 0 0) surface

The Si 2p photoelectron spectroscopy (PES) main line of Si(1 0 0) surface measured in coincidence with the singles (noncoincidence) Si L_2,3-VV Auger-electron spectroscopy (AES) elastic peak is calculated. The agreement with the experiment is good. The present work is the first many-body calculation of the experimental coincidence PES spectrum of solid surface. The narrowing of the coincidence Si 2p PES main line compared to the singles one is due to the mechanism inherent in the coincidence PES. The inherent mechanism is explained by a many-body theory by which photoemission and Auger-electron emission are treated on the same footing.     

Ca+CH_3I→CaI+CH_3反应的矢量相关研究(英文)

本文采用准经典轨线方法,在LEPS势基础上计算了Ca+CH3I→CaI+CH3在不同碰撞能下的矢量相关计算了质心系中四个广义极化微分反应截面(2π/σ)(dσ00/dωt),(2π/σ)(dσ20/dωt),(2π/σ)(dσ22+/dωt),(2π/σ)(dσ21-/dωt),k-j′两矢量相关的P(θr)分布、k-k′-j′三矢量相关的极角分布P(φr)以及用θr和φr表示的产物转动角动量的空间分布P(θr,φr).     

Evidence for second-phonon nuclear wobbling

The nucleus 163Lu has been populated through the reaction 139La(29Si,5n) with a beam energy of 157 MeV. Three triaxial, strongly deformed (TSD) bands have been observed with very similar rotational properties. The first excited TSD band has earlier been assigned as a one-phonon wobbling excitation built on the lowest-lying (yrast) TSD band. The large B(E2)(out)/B(E2)(in) value obtainable for one of four observed transitions between the second and first excited TSD bands is in good agreement with particle-rotor calculations for a two-phonon wobbling excitation.     

饱和吸附H原子的Si（100）表面的光学二次谐波研究

测量了Ｓｉ（１００）（２×１）－Ｈ表面和Ｓｉ（１００）（３×１）－Ｈ表面的反射二次谐波强度随温度的变化关系，并与清洁的Ｓｉ（１００）（２×１）表面进行了比较。Ｓｉ（１００）（２×１）表面和Ｓｉ（１００）（３×１）－Ｈ表面的二次谐波强度随温度的上升而单调地减小，Ｓｉ（１００）（２×１）－Ｈ表面二次谐波强度随温度的变化不是单调的，约在４７０Ｋ时信号最大。可以根据二次谐波信号的强度及其随温度的变化关系来确定样品温度和表面结构。     

理论研究B3Sin0\- (n=15-20)团簇的几何结构、稳定性和电子特性

基于B3LYP/6-311+G(d)下的密度泛函理论和卡里普索结构预测方法,系统研究了B3Sin0\- (n=15-20)团簇的几何结构、稳定性和电子特性。结构搜索发现,三个硼原子易构成三角结构并包裹在硅团簇笼子中。并通过对比实验和理论的光电子谱,进一步确定基态结构的合理性。此外,利用平均结合能、二阶差分能、最高占据轨道和最低未占据轨道能隙研究了体系的稳定性。最后,讨论了体系电荷的分布和转移、红外和拉曼谱等电子特性。     

Adiabatic decoupling sidebands

An analytical solution is given for amplitudes and phases of adiabatic decoupling sidebands as a function of spin inversion time tau. Since all the adiabatic decoupling phases theta(t, tau) refocus at two periods (2T) of the decoupling pulse, the sidebands are located at n/2T rather than at n/T as observed in other decoupling schemes. The real (R(n)(tau)) and imaginary (I(n)(tau)) amplitudes of the sidebands have symmetry R(n)(tau) = R(-n)(tau) and I(n)(tau) = -I(-n)(tau), forming a mirror image between the counterparts of the sidebands. When frequency sweep changes direction all I(n)(tau) are inverted while all R(n)(tau) remain unchanged, leading to pure absorption sidebands with two accumulations as demonstrated by Kupce and Freeman, and to an exchange of sidebands between counterparts. The sum of the real parts for sidebands n = 1 and 2 is almost a constant near on-resonance decoupling, and it increases substantially for large decoupling offsets. The phase defocusing can be minimized for all decoupling offsets by inserting an initial decoupling period with T(ini) = T/2, eliminating all sidebands located at n/2T (n = +/-1, +/-3, +/-5, ...).     

Theoretical study of the Cox-Symons model for normal muonium in silicon

A theoretical study of the Cox-Symons model for normal muonium in Si is presented. The calculations are performed using polarized basis set ab-initio Hartree Fock calculations followed by corrections for electron correlation. It is shown that, if lattice relaxations are included, the antibonding site becomes a minimum of the potential energy surface (PES) for neutral interstitial hydrogen. The energy at this minimum is lower than that at the undistorted tetrahedral interstitial site. The spin density changes from being almost entirely on the muon (for Mu at the T site) to being almost entirely on a three-fold coordinated Si atom (for Mu in the AB configuration). The mechanism required to explain the isotropy and magnitude of the observed hyperfine tensor of Mu in c-Si is complicated. Large displacements of some host atoms are needed, and the system must be dynamic. However, this model is the first able to produce a minimum of the PES together with an isotropic hyperfine interaction and a delocalized spin density.     

Stability of the DX- center in GaAs quantum dots

Using a first-principles band structure method, we study how the size of quantum dots affects the stability and transition energy levels of defects in GaAs. We show that, although a negatively charged DX- center is unstable in bulk GaAs:Si with respect to the tetrahedral coordinated Si(-)(Ga), it becomes stable when the dot size is small enough. The critical size of the dot is about 14.5 nm in diameter. The reason for the stabilization is the strong quantum-confinement effect, which increases the formation energy of Si(-)(Ga) more than that of the DX- defect center. Our studies show that defect properties in quantum dots could be significantly different from those in bulk semiconductors.     

Interaction of thin gold films with silicon

The study of thin (~ 10 monolayers) films Au on Si(III) after heating using LEED, ELS, AES, TEM, PES methods has been carried out. We came to the conclusion that gold on the silicon surface forms a chemical bond with the semiconductor forming surface phases with different electron structures, depending on the Si and Au concentrations.     

半导体异质结界面能带排列的实验研究

本文综述半导体异质结界面能带排列的实验研究情况。介绍了九种目前已成功用于这方面研究的实验方法,这包括C—V测试、光致发光谱测量和光电子能谱测量,并讨论了Al_xGa_(-x)As/GaAs、InAs/GaSb、Ge/Si和Ge/GaAs等几种典型系统的一些研究结果。     

Giant alkali-metal-induced lattice relaxation as the driving force of the insulating phase of alkali-metal/Si(111):B

Ab initio density-functional theory calculations, photoemission spectroscopy (PES), scanning tunneling microscopy, and spectroscopy (STM, STS) have been used to solve the 2sqrt[3]×2sqrt[3]R30 surface reconstruction observed previously by LEED on 0.5 ML K/Si:B. A large K-induced vertical lattice relaxation occurring only for 3/4 of Si adatoms is shown to quantitatively explain both the chemical shift of 1.14 eV and the ratio 1/3 measured on the two distinct B 1s core levels. A gap is observed between valence and conduction surface bands by ARPES and STS which is shown to have mainly a Si-B character. Finally, the calculated STM images agree with our experimental results. This work solves the controversy about the origin of the insulating ground state of alkali-metal/Si(111):B semiconducting interfaces which were believed previously to be related to many-body effects.     

Photoelectron spectroscopy (PES) and photoelectron diffraction (XPD) studies on the local adsorption of cyclopentene on Si(100)

We investigated the chemical and geometrical characteristics of the system cyclopentene on Si(100) in a combined photoelectron spectroscopy (PES) and photoelectron diffraction (XPD) investigation. In this study synchrotron radiation was applied to achieve a high resolution with high surface sensitivity. Our PES and XPD results show that the cyclopentene reacts with the silicon dimers of the (2 × 1)-reconstructed surface, changing the planar molecule to a diverse tilted molecule after the adsorption.     

Agn-1Si（n=5-10）团簇结构与性质研究

采用密度泛函理论研究了Agn-1Si团簇（n = 5-10）的几何结构和物理性质。首先得到体系最低能量结构，其中Ag5Si 和 Ag7Si团簇的结构比之前研究中结构能量更低。通过分析相应结构的能隙，平均结合能，二阶能量差可以发现Si原子的加入可以加强团簇结构稳定性，使团簇更加紧凑。在团簇尺寸n = 5-10的范围里，拥有八个价电子的Ag4Si团簇在以上三个方面都显示出非常稳定的特点。通过分析Agn-1Si团簇 (n = 5-10)的差分电荷发现，电荷的转移主要发生在Si原子与其相邻的Ag原子之间， Si原子和附近的Ag原子之间产生了强烈的共价相互作用，是团簇稳定性增强的重要原因。     

Manganese silicide single crystal and films deposited on Si(1 1 1): A comparative spectroscopic study

A comparative experimental study is presented of the electronic properties of MnSi films grown on Si(1 1 1) and of MnSi single crystals, using X-ray absorption spectroscopy (XAS), and core level and valence band photoemission spectroscopy (PES). No significant differences in the electronic structure of the two systems can be found.Absorption measurements on the Mn 2p threshold show a mixed valence ground state, where the multiplet structure is washed out by the hybridisation of the Mn 3d states with the Si sp states. These results are also confirmed by photoemission (PE) spectra from the valence band and the Mn 3s, 3p and 2p core levels.Strong attention has been paid to the effect of contamination. The occurrence of multiplet effects in the absorption spectra indicates unambiguously the localisation of the Mn 3d electrons in Mn-O bonds, which strongly influences the electronic properties of these systems.     

Origin of enhanced Ge interdiffusion at the initial stage of Ge deposition on Si(5 5 12)-2 × 1: Tensile stress induced by substrate chain structures

By combined investigation of STM and synchrotron PES on Ge/Si(5 5 12)-2 × 1 at 530 °C, it has been found that, in addition to the upward-relaxed surface Si atoms, a subsurface Si atom is also readily replaced by an arriving Ge atom at the initial adsorption stage. Such enhanced interdiffusion is due to a unique character of one-dimensional chain structures of the reconstructed substrate, such as π-bonded and honeycomb chains not existing on other low-index Si surfaces such as Si(001)-c(4 × 2) and Si(111)-7 × 7, applying a tensile surface stress to the neighbouring subsurface atoms. Interdiffusion of Ge having lower surface energy induces adsorption of the displaced Si atoms on the surface to form sawtooth-like facets composed of (113)/(335) and (113)/(112) with arriving Ge atoms until the surface is filled with those facets. Such displacive adsorption is the origin of high Si concentration of formed facets.     

Novel behavior of bond-centered muonium in heavily doped n-type silicon: Curie-like spin susceptibility and charge screening

Bond-centered muonium ( Mu(0)(BC)) has been observed in very heavily doped n-type Si:P. It exhibits a Curie-like electronic spin susceptibility which leads to a giant negative shift in the muon spin precession frequency. At high dopant levels, the Mu(0)(BC) hyperfine parameters, deduced from a model involving spin exchange with free carriers, are significantly reduced from those in intrinsic Si. This indicates that the spin density distribution for Mu(0)(BC) in metallic Si:P is altered significantly by charge screening effects, likely a general phenomenon for deep impurities in materials with high carrier concentrations.     

Heavy fermion superconductivity and magnetic order in noncentrosymmetric CePt3Si

CePt3Si is a novel heavy fermion superconductor, crystallizing in the CePt3B structure as a tetragonally distorted low symmetry variant of the AuCu3 structure type. CePt3Si exhibits antiferromagnetic order at T(N) approximately 2.2 K and enters into a heavy fermion superconducting state at T(c) approximately 0.75 K. Large values of H(')(c2) approximately -8.5 T/K and H(c2)(0) approximately 5 T refer to heavy quasiparticles forming Cooper pairs. Hitherto, CePt3Si is the first heavy fermion superconductor without a center of symmetry.     

Making and breaking covalent bonds across the magnetic transition in the giant magnetocaloric material Gd5(Si2Ge2)

A temperature-dependent, single crystal x-ray diffraction study of the giant magnetocaloric material, Gd5(Si2Ge2), across its Curie temperature (276 K) reveals that the simultaneous orthorhombic to monoclinic transition occurs by a shear mechanism in which the (Si, Ge)-(Si,Ge) dimers that are richer in Ge increase their distances by 0.859(3) A and lead to twinning. The structural transition changes the electronic structure, and provides an atomic-level model for the change in magnetic behavior with temperature in the Gd5(SixGe1-x)(4).