Absorption and scattering in bismuth-doped optical fibers

The optical-loss spectra of bismuth-doped aluminosilicate glass core optical fibers have been investigated in the spectral range 200–1700 nm. Absorption (active and inactive) and scattering losses have been separated. The optical fibers under study were fabricated by methods of modified chemical vapor deposition and surface-plasma chemical vapor deposition.     

Time-resolved spectroscopy and optical gain of silica-based fibers co-doped with Bi, Al and/or Ge, P, and Ti

The optical properties of optical fibers based on silica glass doped with bismuth and co-doped with aluminum oxides and/or germanium, phosphorus, and titanium oxides are studied. The optical loss and luminescence spectra of optical fibers substantially depend on the core composition. The gain spectra of single-mode optical fibers are measured in the IR range. It is demonstrated that the phosphorus-germanium-silicate optical fiber doped with bismuth exhibits a broad gain band (1270–1520 nm) when pumped at a wavelength of 1230 nm. It is also shown that the bismuth-aluminosilicate optical fibers additionally doped with Ge or Ti at about 1 at % have the gain spectra that are significantly narrower than the IR luminescence spectra (in contrast to the fibers that do not contain Ge and Ti). The intensity decay curves of the IR luminescence in such fibers indicate the presence of both short-lived (with the lifetime τ≤4 μs) and long-lived (τ ～ 1 ms) energy levels in the bismuth active centers.     

水杨醛缩苯胺锌及其薄膜的谱学性能

合成了一种新型的发光材料水杨醛缩苯胺锌(SAZ),利用真空热蒸镀制备了高质量、纳米级薄膜,利用红外光谱、差热-热重谱、X射线衍射谱、UV-Vis吸收谱、荧光光谱研究了水杨醛缩苯胺锌及其薄膜的结构、晶态、热稳定性以及光学特性,并利用循环伏安法、UV-Vis吸收谱确定了该材料的能级结构。结果表明,水杨醛缩苯胺锌无定性薄膜具有较高的热稳定性,在紫外光激发下产生绿色荧光,色纯度高, 亮度高。水杨醛缩苯胺锌薄膜在大气环境下存放,荧光衰减比8-羟基喹啉铝快,但受紫外光照射时,荧光衰减比8-羟基喹啉铝慢。水杨醛缩苯胺锌的HOMO能级为-5.659 eV,LUMO能级为-3.054 eV,禁带宽度为2.604 eV。     

The structure of dielectric β-SiC thin films of hollow glass waveguide for CO2 laser power delivery

A novel type of hollow glass waveguide with β-SiC dielectric films was manufactured by a modified chemical vapor deposition method. FTIR absorption spectra and SEM results show that the change of film structure is responsible for the phenomena of the blue shift and the narrow width of the fundamental absorption band of β-SiC, and that the microfissures at the films provide the heterocrystallization centers for promoting the formation of β-SiC crystal. The influences of the concentration of hydrogen gas passed through the system and the reaction temperature are discussed with regard to the film structure.     

Optical properties and electronic transitions of SnO2 thin films by reflection electron energy loss spectroscopy

Optical properties of SnO₂ thin films in the 4–60 eV energy range are determined by reflection electron energy loss spectroscopy. Bulk and surface electron loss functions, real and imaginary parts of the dielectric function, refraction index, extinction and absorption coefficients are obtained from the analysis of the electron energy loss spectra. Electronic transitions are identified through the interpretation of the optical data. The samples (250–500 nm thick) were produced by ion beam-induced chemical vapor deposition. It is found that the compacity of the SnO₂ thin films affects their optical properties and therefore the relative intensity of the observed electronic transitions. The advantages of this method to determine optical properties of thin films are discussed. Inelastic mean free paths (6.2, 17 and 41 Å for electrons traveling in SnO₂ with kinetic energies of 300, 800 and 2000 eV, respectively) are obtained from the corresponding inelastic electron scattering cross-sections.     

伽马辐照对掺镱光纤材料特性影响的研究

掺镱光纤是高功率激光器的核心材料,但在高能射线辐照后其应用性能会显著下降,因此有必要对掺镱光纤材料在辐照环境下的性能变化进行深入研究。采用改进型化学气相沉积法结合稀土螯合物掺杂制备了系列光纤预制棒及光纤,测试了光纤在不同剂量下射线辐照前后的高功率输出性能,以及光纤预制棒辐照前后的吸收光谱及镱离子荧光寿命。结果表明:小剂量辐照后掺镱光纤的高功率输出显著下降,通过预制棒吸收光谱可看出主要是因为伽马辐照后使掺镱光纤材料中Al的相关缺陷浓度增多,在可见光区域吸收损耗增加。Ce离子的掺杂通过缓减辐致铝氧空位中心(Al-OHC)色心缺陷的增加,减少Yb离子荧光寿命的下降,可在一定程度上抑制高功率掺镱光纤的辐致暗化。     

A theoretical and experimental evaluation of III-nitride solar-blind UV photocathode

We have developed a superior solar-blind ultraviolet (UV) photocathode with an Al_xGa_1-xN photocathode (x ～ 0.45) in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Before being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition (MOCVD), a reasonable design was made to the photocathode epitaxy structure, focusing on the Al_xGa_1-xN: Mg active layer, then followed by a comprehensive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.     

矩形内包层掺Yb3+石英光纤的研制及其抽运性能

利用改进的化学汽相沉积工艺加溶液掺杂法,配合光学加工技术,自行设计并研制出内包层为矩形等新颖结构的掺Yb^3 双层石英光纤,实现了上述光纤的包层抽运激光器的成功运转,矩形光纤在1075．6nm波长处获得84mW的最大激光输出功率,斜率效率达77％。     

Influence of Al-doping on the structure and optical properties of ZnO films

Al-doped ZnO (ZnO:Al) thin films with c-axis preferred orientation were deposited on glass substrates using the radio frequency reactive magnetron sputtering technique. The effect of Al concentrations on the microstructure and the luminescence properties of the ZnO:Al thin films were studied by atomic force microscopy (AFM), X-ray diffraction (XRD), and fluorescence spectrophotometer. The results showed that the crystallization of the films was promoted by appropriate Al concentrations; the photoluminescence spectra (PL) of the samples were measured at room temperature. Strong blue peak located at 437 nm (2.84 eV) and two weak green peaks located at about 492 nm (2.53 eV) and 524 nm (2.37 eV) were observed from the PL spectra of the four samples. The origin of these emissions was discussed. In addition, absorption and transmittance properties of the samples were researched by UV spectrophotometer; the UV absorption edge shifted to a shorter wavelength first as Al was incorporated, and then to a longer wavelength with the increasing Al concentrations. The optical band gaps calculated based on the quantum confinement model are in good agreement with the experimental values.     

Space-selective precipitation of Ge crystalline patterns in glasses by femtosecond laser irradiation

Crystalline Ge was induced space selectively inside a borosilicate glass by 800 nm, 250 kHz femtosecond laser irradiation. Micro-Raman spectra and x-ray diffraction analysis confirmed that the laser-induced crystals were cubic Ge. A periodic structure consisting of Ge crystalline lines was inscribed in the glass sample by continuously moving the focal point of the laser beam. Large third-order nonlinear optical properties and ultrafast response time were observed from the crystallization region owing to highly optical nonlinearity of Ge crystals. These results may find some applications in fabrication of functional optical and photonic devices, such as optical circuits.     

Photoluminescence study of nitrogen-doped p-type Mg x Zn1−x O nanocrystalline thin film grown by plasma-assisted molecular beam epitaxy

Tin sulfide thin films have been grown on glass substrates by chemical bath deposition technique (CBD) at room temperature and irradiated with UV light source of wavelength 355 nm. The effect of UV illumination on the physical properties of the films was compared with that of the as-prepared film. Though the thickness of the films was unaltered after illumination, the structural, optical and electrical properties changed considerably. Structural studies showed the polycrystalline nature of the UV-illuminated sample, whereas the as-prepared film was mono crystalline. Both films were orthorhombic structure with Sn₂S₃ phase. The optical properties of the films were systematically studied using the optical absorbance and reflection spectra. Studies on the reflection spectra showed higher reflectance in visible and infrared region for the UV-illuminated films and lower reflectance in the infrared region for the as-prepared one. The variation of the refractive index of the samples was also analyzed. The optical absorption coefficient and the optical band gap energy of the films were evaluated. The irradiated film exhibited lower band gap of 1.74 eV than the value of as-prepared film, i.e., 1.77 eV. The measured resistivity of the tin sulfide thin films was found to be of the order of 10⁸ and 10⁹ Ωcm for UV-illuminated and as-prepared films, respectively. The SEM images showed the presence of worm-like nanostructures with almost similar appearance in both the films.     

质子辐照对国产“一”字型保偏光纤损伤效应研究

航天器在空间环境中运行时,会受到质子的辐照,光纤环作为航天器上光纤陀螺的重要组成部件受辐照影响 最为严重.为了研究国产“一”字型保偏光纤因质子辐照导致辐照诱导损耗的变化规律及其辐照损伤机理, 选择质子能量为5 MeV和10 MeV,光源波长为1310 nm,原位测量了光纤传输功率变化情况,计算出辐照诱导损耗. 利用SRIM软件,模拟能量分别为5 MeV和10 MeV质子辐照在光纤中的电离和位移损伤分布.借助X 射线光电子能谱仪分析辐照前后O 1s和Si 2p解析谱,借助傅里叶变换红外光谱仪观察光纤辐照前后光谱变化情况研究发现,在波长为1310 nm处, 光纤的辐照诱导损耗随着质子注量的增加而增长,主要原因是由于光纤纤芯中Si-OH的浓度增加所导致. 而且能量为5 MeV质子辐照造成光纤的辐照诱导损耗比10 MeV严重,这是因为5 MeV质子在光纤纤芯处造成的 位移和电离损伤均比10 MeV严重,即产生的Si-OH数量多.     

掺Bi石英光纤的γ射线辐照和温度影响特性

采用改进的化学气相沉积法制备了尺寸为10/130 μm的掺Bi单包层石英光纤, 把光纤分成若干组之后置于不同剂量的⁶⁰Co γ辐射源下辐照, 测试了光纤在辐照前后的吸收谱和荧光谱, 并测试了光纤在全温度范围(-40–70 ℃)下荧光强度的变化. 实验结果表明, 辐照后700, 800 nm处的吸收峰显著增强, 这是由于辐照导致更多Bi 近红外活性中心的生成. 976 nm光抽运不同剂量辐照后的光纤, 中心位于1230 nm的荧光谱没有明显变化, 验证了掺Bi石英光纤用于太空及辐照环境下光通信的可能性. 在全温度范围内, 分析了荧光强度的变化规律, 为今后掺Bi光纤激光器的稳定工作提供了数据基础.     

Ultra-broad near-infrared emission of Bi-doped SiO2 Al2O3 GeO2 optical fibers

Bi-doped SiO 2 –Al 2 O 3 –GeO 2 fiber preforms are prepared by modified chemical vapor deposition (MCVD) and solution doping process. The characteristic spectra of the preforms and fibers are experimentally investigated, and a distinct difference in emission between the two is observed. Under 808-nm excitation, an ultra-broad near-infrared (NIR) emission with full-width at half-maximum (FWHM) of 495 nm is observed in the Bi-doped fiber. This observation, to our knowledge, is the first in this field. The NIR emission consists of two bands, which may be ascribed to the Bi 0 and Bi + species, respectively. This Bi-doped fiber is promising for broadband optical amplification and widely tunable laser.     

Peculiarities of Er3+ photoluminescence in halogen-doped amorphous silica

The spectra and photoluminescence kinetics of Er³⁺ ions embedded in amorphous fluorine- and chlorine-doped silica matrices synthesized by surface-plasma chemical vapor deposition were investigated at 27–300 K. Luminescence was excited with an Ar⁺ laser at a wavelength of 514.5 nm and with a diode laser at a wavelength of 975 nm. Narrow and well-expressed components of Stark sublevels with a small contribution of inhomogeneous broadening intrinsic to Er³⁺ ions in crystalline rather than amorphous matrices were revealed and identified in photoluminescence spectra. The structure of Stark sublevels was well-resolved at low temperatures. The presence of the well-resolved Stark structure in spectra was indicative of stable anion complex formation in Er³⁺ environment presumably associated with halogen incorporation. This environment was formed at a stage of the low-temperature plasma-chemical synthesis and was destroyed at glass fusion.     

Effect of radiation-induced color centers absorption in optical fibers on fiber optic gyroscope for space application

The effects of color centers' absorption on fibers and interferometric fiber optical gyroscopes(IFOGs) are studied in the paper. The irradiation induced attenuation(RIA) spectra of three types of polarization-maintaining fibers(PMFs), i.e.,P-doped, Ge-doped, and pure silica, irradiated at 100 Gy and 1000 Gy are measured in a wavelength range from 1100 nm to1600 nm and decomposed according to the Gaussian model. The relationship of the color centers absorption intensity with radiation dose is investigated based on a power model. Furthermore, the effects of all color centers' absorption on RIA and mean wavelength shifts(MWS) at 1300 nm and 1550 nm are discussed respectively. Finally, the random walk coefficient(RWC) degradation induced from RIA and the scale factor error induced by MWS of the IFOG are simulated and tested at a wavelength of 1300 nm. This research will contribute to the applications of the fibers in radiation environments.     

Photosensitivity and photoluminescence of Sn/Yb codoped silica optical fiber preform

Sn/Yb codoped silica optical fiber preform is prepared by the modified chemical vapor deposition （MCVD） followed by the solution-doping method. Ultraviolet （UV） optical absorption, photoluminescence （PL） spectra under 978-nm laser diode （LD） pumping, and refractive index change after exposure to 266-nm laser pulses are obtained. There is only a little change in the PL spectra while a positive refractive index change up to 2×10^-4 is observed after 30-min exposure to 266-nm laser pulses. The results show that both of the peculiar photosensitivity of Smdoped silica and the gain property of Yb-doped silica fiber are preserved in the Sn/Yb codoped silica optical fiber preform. The experimental data suggest that the photosensitivity of the fiber preform under high energy density laser irradiation should be mainly due to the bond-breaking of oxygen deficient defects, while under relatively low energy density laser irradiation, the refractive index change probably originates from the photoconversion of optically active defects.     

Optical and structural properties of polycrystalline CVD diamond films grown on fused silica optical fibres pre-treated by high-power sonication seeding

In this paper, the growth of polycrystalline chemical vapour deposition (CVD) diamond thin films on fused silica optical fibres has been investigated. The research results show that the effective substrate seeding process can lower defect nucleation, and it simultaneously increases surface encapsulation. However, the growth process on glass requires high seeding density. The effects of suspension type and ultrasonic power were the specific objects of investigation. In order to increase the diamond density, glass substrates were seeded using a high-power sonication process. The highest applied power of sonotrode reached 72 W during the performed experiments. The two, most common diamond seeding suspensions were used, i.e. detonation nanodiamond dispersed in (a) dimethyl sulfoxide and (b) deionised water. The CVD diamond nucleation and growth processes were performed using microwave plasma assisted chemical vapour deposition system. Next, the seeding efficiency was determined and compared using the numerical analysis of scanning electron microscopy images. The molecular composition of nucleated diamond was examined with micro-Raman spectroscopy. The sp³/sp² band ratio was calculated using Raman spectra deconvolution method. Thickness, roughness, and optical properties of the nanodiamond films in UV–vis wavelength range were investigated by means of spectroscopic ellipsometry. It has been demonstrated that the high-power sonication process can improve the seeding efficiency on glass substrates. However, it can also cause significant erosion defects at the fibre surface. We believe that the proposed growth method can be effectively applied to manufacture the novel optical fibre sensors. Due to high chemical and mechanical resistance of CVD diamond films, deposition of such films on the sensors is highly desirable. This method enables omitting the deposition of an additional adhesion interlayer at the glass–nanocrystalline interface, and thus potentially increases transmittance of the optical system.     

Effects of electron irradiation on the properties of GZO films deposited with RF magnetron sputtering

Transparent conductive GZO films were deposited on polycarbonate substrates by electron beam assisted radio frequency (RF) magnetron sputtering and then the influence of electron irradiation on the structural, optical and electrical properties of GZO films was investigated by using X-ray diffractometry, UV-vis spectrophotometry, four point probes, atomic force microscopy and UV photoelectron spectroscopy. Sputtering power was kept constant at 3 W/cm² during deposition, while electron irradiation energy varied from 450 to 900 eV.Electron irradiated GZO films show larger grain sizes than those of films prepared without electron irradiation, and films irradiated at 900 eV show higher optical transmittance in the visible wavelength region and lower sheet resistance (120 Ω/□) than other films. The work-function is also increased with electron irradiation energy. The highest work-function of 4.4 eV was observed in films that were electron irradiated at 900 eV.     

Optical properties of SrTiO<Subscript>3</Subscript> thin films by pulsed laser deposition

SrTiO₃ thin films were prepared on a fused-quartz substrate by pulsed laser deposition (PLD). Dense and homogeneous films with a thickness of 260 nm were prepared. Optical constants (refractive index n and extinction coefficient k) were determined from the transmittance spectra using the envelope method. The optical band gap energy of the films was found to be 3.58 eV, higher than the 3.22 eV for bulk SrTiO₃, attributable to the film stress exerted by the substrate. The dispersion relation of the refractive index vs. wavelength follows the single electronic oscillator model. The refractive index and the packing density for the PLD-prepared SrTiO₃ thin films are higher than those for the SrTiO₃ films prepared by physical vapor deposition, sol–gel and RF sputtering. Received: 18 March 2002 / Accepted: 7 October 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +86-25/359-5535, E-mail: mszhang@nju.edu.cn