Terahertz emission in tenuous gases irradiated by ultrashort laser pulses

Mechanism of terahertz (THz) pulse generation in gases irradiated by ultrashort laser pulses is investigated theoretically. Quasi-static transverse currents produced by laser field ionization of gases and the longitudinal modulation in formed plasmas are responsible for the THz emission at the electron plasma frequency, as demonstrated by particle-in-cell simulations including field ionization. The THz field amplitude scaling with the laser amplitude within a large range is also discussed.     

少周期激光脉冲与气体作用产生的离化电流和THz波辐射

本文通过理论和数值模拟,研究少周期激光脉冲电离气体原子产生的离化电流 以及相应的THz波辐射.研究表明,少周期激光脉冲离化气体后能产生较大的离化电流, 因而可以产生较强的THz辐射.不同的少周期激光脉冲相位导致电离出的 电子初始速度和电离起始时刻不同,从而产生的离化电流有所不同, 辐射的THz波随激光脉冲的相位成周期性变化.该理论得到一维PIC数值模拟的验证. 对于给定的激光脉冲相位,离化电流和THz辐射振幅并没有随入射激光振幅的增加而单调增加, 而是存在一些极值点.与均匀分布气体相比,当气体分布具有一定梯度时, 辐射表现相似的规律,但频谱会发生一定的变化.     

气体辐射太赫兹波产额与驱动激光强度的依赖关系

利用光电流模型研究了气体辐射太赫兹波产额与驱动激光峰值强度的依赖关系.模拟表明,无论是单色激光脉冲还是双色激光场,当激光较弱时,太赫兹产额随着激光强度的增加而迅速增大;而当气体电离接近或达到饱和后,进一步增强激光场强度,太赫兹产额出现了振荡变化.与通常采用较弱激光强度相比,更高的激光强度(致使气体达到完全电离)会进一步增强太赫兹波的辐射强度.分析各个电离事件所产生电子的个数和运动轨迹的对称性,可以很好地解释这些结果.     

基于光场离化电流机制产生强太赫兹辐射的参数优化研究

基于超短激光脉冲与气体作用通过光场离化电流产生太赫兹(THz)辐射的模型, 研究了用双色激光脉冲的方法产生强THz辐射的优化参数条件. 数值计算表明, 导致THz辐射产生的离化电流主要是由一阶电离过程产生的, 高阶离化对该电流产生的贡献很小. 通过调节基频光与倍频光的配比、相位差都能增大离化电流, 从而可以提高THz辐射振幅. 将激光波长拓展到中红外波段, 也有利于提高离化电流. 此外,改变作用气体的种类也能改变离化电流. 在激光和密度参数相等的情况下, 在氦气中可以产生高于氮气中2倍左右的离化电流.     

Detection of broadband terahertz waves with a laser-induced plasma in gases

We report the experimental results and theoretical analysis of broadband detection of terahertz (THz) waves via electric-field-induced second-harmonic generation in laser-induced air plasma with ultrashort laser pulses. By introducing the second-harmonic component of the white light in the laser-induced plasma as a local oscillator, coherent detection of broadband THz waves with ambient air is demonstrated for the first time. Our results show that, depending on the probe intensity, detection of THz waves in air can be categorized as incoherent, hybrid, and coherent detection. Coherent detection is achieved only when the tunnel ionization process dominates in gases.     

Theoretical investigation of tunable polarized broadband terahertz radiation from magnetized gas plasma

The mechanism of terahertz(THz) pulse generation with a static magnetic field imposed on a gas plasma is theoretically investigated. The investigation demonstrates that the static magnetic field alters the electron motion during the optical field ionization of gas, leading to a two-dimensional asymmetric acceleration process of the ionized electrons. Simulation results reveal that elliptically or circularly polarized broadband THz radiation can be generated with an external static magnetic field imposed along the propagation direction of the two-color laser. The polarization of the THz radiation can be tuned by the strength of the external static magnetic field.     

Coherent control of THz wave generation in ambient air

Our study of THz wave generation in the pulsed laser induced air plasma with individually controlled phase, polarization, and amplitude of the optical fundamental wave (omega) and its second harmonic (2omega) indicates that the third-order nonlinear optical process mixing the omega and 2omega beams in the ionized plasma is the main mechanism of the efficient THz wave generation. The polarity and the strength of the emitted THz field are completely controlled by the relative phase between the omega and 2omega waves. The measured THz field amplitude is proportional to the pulse energy of the fundamental beam and to the square root of the pulse energy of the second-harmonic beam once the total optical pulse energy exceeds the plasma formation threshold. The optimal THz field is achieved when all waves (omega, 2omega, and THz waves) are at the same polarization in the four-wave-mixing process.     

Tunable anticrossing of gated and ungated plasma resonances and enhancement of interlayer terahertz electric field in an asymmetric bilayer of density-modulated two-dimensional electron gases

We study theoretically the terahertz (THz) response of a bilayer of density-modulated two-dimensional electron gases, which we employ to model the actual double-quantum-well electron channel of a grid-gated field-effect transistor in which strong THz photoresponse was recently observed. We have shown that such a system can be driven into the anticrossing regime between gated and ungated plasma resonances by tuning the gate voltage. The amplitude of the interlayer THz electric field in the ungated (double-layered) portions of the channel increases dramatically in the anticrossing regime. This strong interlayer THz electric field may strongly affect interlayer electron tunneling which, in turn, may contribute to the physical mechanism underlying the strong THz photoresponse observed in recent experiments.     

Study of terahertz radiation generated by optical rectification on thin gold films

Emission of terahertz (THz) radiation as a result of optical rectification of intense femtosecond laser pulses on thin gold films has been studied by time-domain THz spectroscopy. The THz amplitude was measured as a function of film thickness and incidence angle. The experiments reveal that the emitted THz field is suppressed for a thickness below 100 nm, which gives evidence of the nonlocal character of the response. The variation of incidence angle allows us to estimate the components of susceptibility tensor chi2ijk. For thicker films and near grazing incidence, the emitted THz field attains a peak value of 4 kV/cm.     

光温双控太赫兹波调制特性研究

基于多频带金属开口谐振环结构,利用GaAs材料的光敏特性和VO₂薄膜的热致相变特性,设计了一种既能实现光控又能实现温控的太赫兹(Terahertz, THz)波调制器,研究了光强和薄膜温度对 THz波调制特性的影响。结果表明,随着光强的增加,谐振频率均出现蓝移且谐振强度减小,当光强达到0.2 μJ·cm-2时,第二个谐振点(0.52 THz)蓝移了0.14 THz,透射幅度增加达50%;随着VO₂温度增加至相变温度以上,THz波透射幅度急剧减小,在0.63 THz处透射幅度减小达45.5%;当光强和温度同时控制时,随着光强和温度的增加,谐振点频率蓝移且谐振点处的THz波透射幅度增加,但在温度超过相变温度后,则温度控制起主导作用。设计的THz波调制器能通过光控和温控实现对THz波的明显调制效果,可为实现多功能的THz波功能器件的设计及应用提供参考。     

THz radiation generation via the interaction of two‐colour ultra‐short laser pulses with SO2 and NH3 gases

In this work, using a two‐dimensional particle‐in‐cell Monte Carlo collision computation method, terahertz (THz) radiation generation via the interaction of two‐colour, ultra‐short, high‐power laser pulses with the polyatomic molecular gases sulphur dioxide (SO₂) and ammonia (NH₃) is examined. The influence of SO₂ and NH₃ pressures and two‐colour laser pulse parameters, i.e., pulse shape, pulse duration, and beam waist, on the THz radiation generation is studied. It is shown that the THz signal generation from SO₂ and NH₃ increases with the background gas pressure. It is seen that the THz emission intensity for both gases at higher laser pulse durations is higher. Moreover, for these polyatomic gases, the plasma current density increases with increase in the laser pulse beam waist. A more powerful THz radiation intensity with a larger time to peak of the plasma current density is observed for SO₂ compared to NH₃. In addition, many THz signals with small intensities are observed for both polyatomic gases. It is seen that for both SO₂ and NH₃ the generated THz spectral intensity is higher at higher gas pressures.     

THz Radiation Generation via the Interaction of Ultra‐short Laser Pulses with the Molecular Hydrogen Plasma

In this paper, a two dimensional Particle In Cell‐Monte Carlo Collision simulation scheme is used to examine the THz generation via the interaction of high intensity ultra‐short laser pulses with an underdense molecular hydrogen plasma slab. The influences of plasma density, laser pulse duration and its intensity on the induced plasma current density and the subsequent effects on the generated THz signal characteristics are studied. It is observed that the induced current density in the plasma medium and THz spectral intensity are increased at the higher laser pulse intensities, laser pulse durations and plasma densities. Moreover, the generated THz electric field amplitude is reduced at the higher laser pulse durations. A wider frequency range for the generated THz signal is shown at the lower laser pulse durations and higher plasma densities. Additionally, it is found that the induced current density in hydrogen plasma medium is the dominant factor influencing the generation of THz pulse radiation. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Integrated injection seeded terahertz source and amplifier for time-domain spectroscopy

We used a terahertz (THz) quantum cascade laser (QCL) as an integrated injection seeded source and amplifier for THz time-domain spectroscopy. A THz input pulse is generated inside a QCL by illuminating the laser facet with a near-IR pulse from a femtosecond laser and amplified using gain switching. The THz output from the QCL is found to saturate upon increasing the amplitude of the THz input power, which indicates that the QCL is operating in an injection seeded regime.     

Terahertz radiation generation by beating of two chirped laser pulses in a warm collisional magnetized plasma

Analytical equations of terahertz(THz) radiation generation based on beating of two laser beams in a warm collisional magnetized plasma with a ripple density profile are developed. In this regard, the effects of frequency chirp on the field amplitude of the terahertz radiation as well as the temperature and collision parameters are investigated. The ponderomotive force is generated in the frequency chirp of beams. Resonant excitation depends on tuning of the plasma beat frequency,magnetic field frequency, thermal velocity, collisional frequency, and effect of the frequency chirp with the plasma density.For optimum parameters of frequency and temperature the maximum THz amplitude is obtained.     

外差式相干探测时域光谱仪对磷化铟（InP）晶片的超宽频带太赫兹光谱的探测

磷化铟（InP）属于Ⅲ-Ⅴ族化合物半导体材料, 在毫米波的应用中展示出了高性能,在非线性太赫兹器件应用上具有很大的潜力。以前关于InP的研究主要集中于太赫兹频率在0.1～4 THz的频率范围内,在4～10 THz频率范围内InP的太赫兹光学数据还是空白。该研究利用空气等离子体相干探测太赫兹波的时域光谱系统研究了无掺杂的InP晶片在超宽THz频率范围（0.5～18 THz）内的光学特性, 实验中用电离的空气作为太赫兹的发射器和探测器, 利用可以调制的局部偏压诱导二次谐波产生,使在气体中太赫兹波的相干探测成为可能,明显提高了系统的动态范围和灵敏度。产生的太赫兹频谱宽度主要被激光脉冲持续时间所限制,太赫兹脉冲通过InP晶片后相对于参考脉冲会延迟,同时振幅会降低。另外,太赫兹信号的频谱振幅在6.7～12.1 THz范围内下降到本底噪声。同时还可以看出InP晶片在6.7～12.1 THz频率范围内不透光,在0.8～6.7 THz以及12.1～18 THz频率范围内InP的吸收系数相对较低,特别是在15～17.5 THz范围内吸收系数很低并且保持相对稳定,与此同时它的折射率单调增加。这些发现将有助于基于InP晶片的非线性太赫兹器件设计。     

Dynamics of strong-field double ionization of H_2 in co-rotating two-color circularly polarized laser fields

Double ionization of H_2 in a co-rotating two-color circularly polarized(TCCP) laser field is theoretically investigated. By changing the ratio of electric field peak amplitudes of the TCCP laser pulses, the double ionization probability as a function of the laser intensity shows a clear knee structure, which is suppressed significantly in the case of the atom. Due to the large spatial range of the electronic initial distribution, with the analysis of classical trajectories of ionized electrons, it is found that the ionization of the electron in the farther distance increases the probability of recollision. Furthermore, the yield of nonsequential double ionization created by the recollision can be enhanced by controlling the amplitude ratio of the TCCP laser field.     

Terahertz emission from collapsing field domains during switching of a gallium arsenide bipolar transistor

Broadband pulsed THz emission with peak power in the sub-mW range has been observed experimentally during avalanche switching in a gallium arsenide bipolar junction transistor at room temperature, while significantly higher total generated power is predicted in simulations. The emission is attributed to very fast oscillations in the conductivity current across the switching channels, which appear as a result of temporal evolution of the field domains generated in highly dense electron-hole plasma. This plasma is formed in turn by powerful impact ionization in multiple field domains of ultrahigh amplitude.     

团簇在超强超短脉冲激光场中的演化

 利用低温脉冲气阀产生氘团簇束,在SILEX-Ⅰ激光装置上开展实验,研究氘团簇在超强超短脉冲激光场中的演化过程,获得了数十keV的高能氘离子,这些氘离子的能谱分布与库仑爆炸模型计算结果一致。实验结果表明,在一定的激光功率密度条件下,团簇的平均尺度决定了释放出高能离子的能谱分布。激光辐照团簇后,通过阈上电离部分电子逃逸团簇,随着初始电离电子屏蔽作用加强,碰撞电离变成了团簇的主要电离机制。     

Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field

The nonlinear radiation responses of two different n-doped bulk semiconductors: indium antimonide(In Sb) and indium arsenide(In As) in an intense terahertz(THz) field are studied by using the method of ensemble Monte Carlo(EMC)at room temperature. The results show that the radiations of two materials generate about 2-THz periodic regular spectrum distributions under a high field of 100 k V/cm at 1-THz center frequency. The center frequencies are enhanced to about 7 THz in In Sb, and only 5 THz in In As, respectively. The electron valley occupancy and the percentage of new electrons excited by impact ionization are also calculated. We find that the band nonparabolicity and impact ionization promote the generation of nonlinear high frequency radiation, while intervalley scattering has the opposite effect. Moreover, the impact ionization dominates in In Sb, while impact ionization and intervalley scattering work together in In As. These characteristics have potential applications in up-convension of THz wave and THz nonlinear frequency multiplication field.     

The dependence on optical energy of terahertz emission from air plasma induced by two-color femtosecond laser-pulses

The generation of terahertz （THz） emission from air plasma induced by two-color femtosecond laser pulses is studied on the basis of a transient photocurrent model. While the gas is ionized by the two-color femtosecond laser-pulses com- posed of the fundamental and its second harmonic, a non-vanishing directional photoelectron current emerges, radiating a THz electromagnetic pulse. The gas ionization processes at three different laser-pulse energies are simulated, and the corresponding THz waveforms and spectra are plotted. The results demonstrate that, by keeping the laser-pulse width and the relative phase between two pulses invariant when the laser energy is at a moderate value, the emitted THz fields are significantly enhanced with a near-linear dependence on the optical energy.