正交多铁性材料DyMnO3的磁性质研究

基于密度泛函理论结合投影缀加平面波方法, 通过VASP软件包执行计算, 在分别考虑电子自旋阻挫共线与非共线的磁性结构基础上, 研究了正交结构下多铁性DyMnO₃材料在不同磁性构型下的晶格参数、总能、磁性、电子态密度和能带结构. 计算过程中选取广义梯度近似赝势, 同时使用局域自旋密度近似+U方法处理强关联作用下3d电子的计算结果. 计算结果表明: Mn离子为A型反铁磁态磁性构型的情况下能量最低结构最为稳定, Dy稀土离子磁性甚微, 可忽略不计; 当考虑电子自旋为非共线排列时, 正交DyMnO₃的总能提高、磁矩增大; 从电子结构图分析可知, 材料为间接能隙绝缘体, 能隙宽度约为0.38 eV, 加U后为1.36 eV, 导致晶格畸变的主要原因为Mn-3d与O-2p电子之间强烈的杂化作用. 关键词： 多铁性 反铁磁 密度泛函理论 非共线     

多铁材料HoMnO3中光学吸收和畸变驱动的第一性原理研究

六角钙钛矿结构锰氧化物HoMnO₃磁电效应的研究近年来已成为多铁性材料研究中极其重要的一个方面. 本文基于广义梯度近似下的密度泛函理论, 考虑电子自旋的非共线磁性结构, 计算研究了 d电子在位库仑作用和自旋-轨道耦合作用对HoMnO₃的电子结构、 轨道杂化和能态密度分布的影响. 结果显示, 当考虑在位库仑排斥势U作用时, 强烈的Ho 5d与O(3, 4) 2p以及Mn 3d与O(1, 2) 2p间的轨道杂化是驱动HoMnO₃发生铁电畸变的根源, 此时能隙和能带的分布为解释实验中发现的强烈的光学吸收峰提供了理论依据, 而自旋-轨道耦合使得Mn 3d-O(3, 4) 2p在 ab平面内的轨道交迭略有增强, 平面内部分能带简并消除, HoMnO₃材料呈现典型的间接性能隙绝缘体特征. 关键词： 磁电效应 铁电畸变 态密度 光学吸收     

阻挫诱导的亚铁磁性Heisenberg系统中的量子相变

利用密度矩阵重整化群(DMRG)方法研究磁性阻挫对一种S=1/2准一维反铁磁自旋链但却具有亚铁磁性的Heisenberg系统基态的影响.计算了单个晶胞的基态能、自旋关联函数以及自旋能隙.研究表明这种Heisenberg自旋系统的基态随着阻挫α的增强将从磁有序相变化到自旋无序相,并且伴随着自旋能隙的出现,量子相变点为α≈0.412.同时线形链上格点间自旋长程关联值的计算结果表明在磁有序区间体系的磁有序性质随着α的增强而减弱,阻挫在0≤α< 关键词： 准一维反铁磁自旋链 亚铁磁性 密度矩阵重整化群 自旋能隙     

第一原理研究Mn掺杂LiNbO3晶体的磁性和光吸收性质

采用基于密度泛函理论和局域密度近似的第一性原理分析了Mn掺杂LiNbO₃晶体的结构, 磁性, 电子特性和光吸收特性. 文中计算了Mn占据Li位和Nb位体系的形成焓, 对应的形成焓分别为-8.340 eV/atom和-8.0062 eV/atom, 也就意味着Mn 原子优先占据Li位. 这也就意味着Mn原子占据Li位的掺杂LiNbO₃晶体结构更稳定. 磁性分析的结果显示, 其对应磁矩也比占据Nb位的高. 进一步分析磁性的来源, 自旋态密度结果显示: Mn掺杂LiNbO₃晶体的磁性主要源于掺杂原子Mn, Mn原子携带的磁矩高达 4.3 μ_B, 显示出高自旋结构. 由于Mn-3d与近邻O-2p及次近邻Nb-4d 轨道的杂化作用, 计算表明: 诱导近邻O原子及次近邻Nb原子产生的磁矩对总磁矩的贡献较小. 通过光学吸收谱的分析, 得出在可见光区Li位被Mn原子替代以后显示出更好的光吸收响应相比于Nb位. 本文还分析了O空位对于LiNbO₃晶体磁性与电子性质的影响, 结果显示O空位的存在可以增加Mn掺杂LiNbO₃体系的磁性.     

Mn掺杂GaN稀磁半导体的电磁特性研究

采用基于密度泛函理论的第一性原理平面波超软赝势法计算了不同浓度Mn掺杂GaN(Ga1-xMnxN,x=0.0625和0.1250)的晶格常数、能带结构和态密度,分析比较了掺杂前后GaN的电子结构和磁性.结果表明:Mn掺入后体系仍为直接带隙半导体,带隙宽度随Mn含量的增加逐步增大.Mn掺杂GaN均使得N2p与Mn3d轨道杂化,产生自旋极化杂质带,自旋向上的能带占据费米面,掺杂后的Ga1-xMnxN表现为半金属铁磁性,适合自旋注入;随着Mn掺杂浓度的增加,体系的半金属性有所增强.     

Mn掺杂对半金属铁磁体Fe_2Si电磁特性的影响

此文用基于密度泛函理论第一性原理的贋势平面波方法,计算了Fe_2Si及Mn掺杂Fe_2Si体系的能带结构、电子态密度和磁学特性,分析了不同位置Mn掺杂对Fe_2Si电磁特性的影响,获得了纯的和不同位置Mn掺杂的Fe_2Si体系是铁磁体,自旋向上的能带结构穿过费米面表现金属特性,纯Fe_2Si的半金属隙为0.164e V;Mn掺杂在Fe1位时,自旋向下部分转变为A-M间的间接带隙半导体,体系呈现半金属特性,此时磁矩为2.00μB,是真正的半金属性铁磁体;掺杂在Fe2位时,自旋向下部分的带隙值接近于0,体系呈现金属特性;掺杂在Fe3位时,自旋向下部分转变为L-L间的直接带隙半导体,体系呈现半金属特性等有益结果 .自旋电荷密度分布图表明Mn原子的3d电子比较局域,和周围原子成键时3d电子更倾向于形成共价键.体系的半金属性和磁性主要来源于Fe-3d电子与Mn-3d电子之间的d-d交换,Si-3p电子与Fe、Mn-3d电子之间的p-d杂化.这些结果为半金属铁磁体Fe_2Si的电磁调控提供了有效的理论指导.     

LSDA+U方法研究PuO2电子结构和成键特征

采用LSDA(局域自旋密度近似) U(有效库仑相关能)方法计算研究了PuO2的电子结构和成键特征。计算的平衡体积和半导体带隙分别为0.03875 nm3和0.18 eV,与实验结果符合得很好。能态密度和电子密度的分析表明PuO2并不是纯粹的离子晶体,Pu5f和O2p轨道杂化形成共价键。计算结果有助于理解PuO2晶体中Pu5f电子的关联效应。     

阻挫诱导的亚铁磁性Heisenberg系统中的量子相变

利用密度矩阵重整化群(DMRG)方法研究磁性阻挫对一种S=1/2准一维反铁磁自旋链但却具有亚铁磁性的Heisenberg系统基态的影响.计算了单个晶胞的基态能、自旋关联函数以及自旋能隙.研究表明这种Heisenberg自旋系统的基态随着阻挫α的增强将从磁有序相变化到自旋无序相，并且伴随着自旋能隙的出现，量子相变点为α≈0.412.同时线形链上格点间自旋长程关联值的计算结果表明在磁有序区间体系的磁有序性质随着α的增强而减弱，阻挫在0≤α<     

Mn掺杂GaN稀磁半导体的电磁特性研究

采用基于密度泛函理论的第一性原理平面波超软赝势法计算了不同浓度Mn掺杂GaN（Ga1-xMnxN, x=0.0625和0.1250）的晶格常数、能带结构和态密度,分析比较了掺杂前后GaN的电子结构和磁性。结果表明：Mn掺入后体系仍为直接带隙半导体,带隙宽度随Mn含量的增加逐步增大。Mn掺杂GaN均使得N 2p与Mn 3d轨道杂化,产生自旋极化杂质带,自旋向上的能带占据费米面,掺杂后的Ga1-xMnxN表现为半金属铁磁性,适合自旋注入;随着Mn掺杂浓度的增加,体系的半金属性有所增强。     

Mn掺杂GaN电子结构和光学性质研究

采用基于密度泛函理论的第一性原理平面波赝势法计算不同Mn浓度掺杂GaN晶体的电子结构和光学性质.计算结果表明Mn掺杂GaN使得Mn 3d与N 2p轨道杂化,产生自旋极化杂质带,材料表现为半金属性,非常适于自旋注入,说明该种材料是实现自旋电子器件的理想材料,折射率在带隙处出现峰值,紫外区光吸收系数随Mn浓度的增加而增大. 关键词： Mn掺杂GaN 第一性原理 电子结构 光学性质     

阻挫三角反铁磁AgCrO2螺旋自旋序的第一性原理研究

基于密度泛函理论的广义梯度近似(GGA)和投影缀加波(PAW)方法,分别从共线和非共线磁性结构出发,研究了自旋阻挫三角反铁磁AgCrO₂的基态、磁性以及电子结构,从理论计算的角度给出了基态磁性结构.计算结果表明:AgCrO₂具有120°螺旋自旋序反铁磁基态,其自旋螺旋面平行于(110)面或(11^-0)面;由于Cr离子间的自旋几何阻挫,导致沿晶体的a,b和a+b方向上均形成了螺旋自旋转动角为120°的 关键词： 第一性原理 交换相互作用 阻挫 反铁磁     

First-principles study on the electronic structure and magnetism of layered oxyselenide La2Mn2Se2O3

The electronic structure and magnetism of layered oxyselenide La(2)Mn(2)Se(2)O(3) have been studied by using first-principles calculations within the generalized gradient approximation (GGA) and GGA + U methods. The G-type antiferromagnetic (AF) state is calculated to be the most stable phase among the various magnetic configurations of interest, irrespective of the choice of the functional used, which is in good agreement with the experiments. In contrast to La(2)Fe(2)Se(2)O(3) and La(2)Co(2)Se(2)O(3), in which the AF states show metallic behavior under the GGA method, we predict the ground state of La(2)Mn(2)Se(2)O(3) is a semiconductor with an indirect band gap of ～0.52 eV via the GGA calculations. This is closely related to a closed shell configuration and large exchange splitting (～3.5 eV) in the Mn 3d states. Moreover, the magnetic properties are also discussed in terms of the calculated Heisenberg spin exchange constants, suggesting that La(2)Mn(2)Se(2)O(3) is a strong two-dimensional magnetically frustrated system.     

Electronic and magnetic properties of Mn-doped ZnO: Total-energy calculations

Based on the spin generalized gradient approximation (σGGA) of the density functional theory (DFT), the structural, magnetic, and electronic properties of Mn-doped ZnO structure have thoroughly been investigated. It is found that the Mn atom prefers to substitute one of the Zn atoms, producing the energetically most stable configuration for the Mn-doped ZnO structure. Employing the Hubbard potential within the calculations suggests various changes and modifications to the structural, magnetic and electronic properties of the Mn-doped ZnO. Our calculations reveal that the local magnetic moment at the Mn site using the ordinary σGGA functional is 4.84 μ_B/Mn, which is smaller than that evaluated by including the Hubbard potential of 5.04 μ_B/Mn. Overall, the electronic band structure of the system, within the σGGA+U, is half-metallic, with metallic nature for the majority state and semiconducting nature for the minority state. Simulated scanning tunneling microscopy (STM) images for both unoccupied and occupied states indicate siginficant brightness on both Zn and Mn atoms and much brighter protrusions around the O atoms, respectively.     

Exchange coupling and helical spin order in the triangular lattice antiferromagnet CuCrO₂ using first principles

The magnetic and electronic properties of the geometrically frustrated triangular antiferromagnet CuCrO2 are investigated by first principles through density functional theory calculations within the generalized gradient approximations (GGA)+U scheme. The spin exchange interactions up to the third nearest neighbours in the ab plane as well as the coupling between adjacent layers are calculated to examine the magnetism and spin frustration. It is found that CuCrO2 has a natural two-dimensional characteristic of the magnetic interaction. Using Monte-Carlo simulation, we obtain the Neel temperature to be 29.9 K, which accords well with the experimental value of 24 K. Based on non-collinear magnetic structure calculations, we verify that the incommensurate spiral-spin structure with (110) spiral plane is believable for the magnetic ground state, which is consistent with the experimental observations. Due to intra-layer geometric spin frustration, parallel helical-spin chains arise along the a, b, or a + b directions, each with a screw-rotation angle of about 120°. Our calculations of the density of states show that the spin frustration plays an important role in the change of d-p hybridization, while the spin-orbit coupling has a very limited influence on the electronic structure.     

Structure, electronic and magnetic properties of Ca-doped chromium oxide studied by the DFT method

Using first-principles density functional theory calculations within the generalised gradient approximation (GGA) as well as GGA+U method we study Ca-doped α-Cr₂O₃ crystal. Structural, electronic and magnetic properties due to the singular impurity incorporation have been investigated and discussed in detail. Atomic shifts as well as computed Bader charges on atoms imply the importance of ionic nature in the atomic interactions in chromium oxide. The study improves our knowledge on how the crystalline lattice reacts on the presence of a Ca dopant. According to our research it is found that Ca impurity incorporation produces some local changes upon the electronic band structure of the material without occurrence of local states within the band-gap. It is found that Ca incorporation produces change in magnetic behaviour of the crystal: it becomes ferromagnetic.     

Tuning the magnetic and electronic properties of monolayer chromium tritelluride through strain engineering

From first-principles DFT calculations within the GGA+U approach, we investigated the structural, magnetic and electronic properties of a monolayer of CrTe₃ with and without applied strain. Without applied strain, we find that CrTe₃ is an antiferromagnetic semiconductor with an indirect band-gap of 0.46 eV. Under increasing biaxial strain, we noticed that the antiferromagnetic state turns to ferromagnetic metal and back to an antiferromagnetic semiconductor, with a Néel temperature of 231.50 K for −5% of strain. However, we find that the magnetism is attributed to the super-exchange induced by the ionic interactions between the Cr and Te atoms, and can be enhanced by strain. Finally, our investigations of strain effects on magnetic order and effective masses are promising for the use of CrTe₃ single layer in future magnetoelectric applications.     

Three-dimensional spin structure on a two-dimensional lattice: Mn/Cu(111)

Based on first-principles vector spin-density total-energy calculations of the magnetic and electronic structure of Cr and Mn transition-metal monolayers on the triangular lattice of a (111) oriented Cu surface, we propose for Mn a three-dimensional noncollinear spin structure on a two-dimensional triangular lattice as magnetic ground state. This new spin structure is a multiple spin-density wave of three row-wise antiferromagnetic spin states and comes about due to magnetic interactions beyond the nearest neighbors and due to higher order spin interactions (i.e., four spin). The magnetic ground state of Cr is a coplanar noncollinear periodic 120 degrees Néel structure.     

Magnetic and electronic structure studies of the perovskite oxide Nd2/3Sr1/3MnO3 from the first principle calculation

Generalized gradient approximation (GGA) and GGA + U (U denotes on-site Coulomb interactions) methods are applied to investigate the magnetic and electronic structures of the perovskite oxide Nd_2/3Sr_1/3MnO₃. Under GGA the compound prefers ferrimagnetic ordering in which Nd sublattice is spin-antiparallel to Mn sublattice. Nd 4f states cross over the Fermi level under GGA, leading the ferrimagnetic Nd_2/3Sr_1/3MnO₃ to a metallic character. The on-site Coulomb interactions should be included to emphasize the localized feature of Nd 4f states. Under GGA + U, the spins of Nd and Mn sublattices tend to be parallel in the ground state, and fully spin-polarized Mn 3d electrons yield a half-metallic band structure for the ferromagnetic Nd_2/3Sr_1/3MnO₃. The ferromagnetic coupling between Nd and Mn sublattices is ascribed to the super-exchange interaction between Nd 4f and Mn 3d (t2g) electrons via O 2p electrons.     

Magnetism and electronic structure of Mn- and V-doped zinc blende ZnTe from first-principles calculations

By means of the first-principles full potential linearized augmented plane-wave method within the local density approximation for the exchange-correlation functional, we have investigated the magnetism and electronic structure of Mn- and V-doped zinc blende ZnTe. Total energy calculations show that, for high doping concentration (12.5%), ZnTe:Mn has an antiferromagnetic ground state while the ferromagnetic state is more favorable than the antiferromagnetic state for ZnTe:V. Furthermore, ZnTe with a low doping of Mn (6.25%) has a stable ferromagnetic ground state, which is in agreement with the experimental results. The calculated magnetic moment of ZnTe doped with Mn (V) mainly originates from transition metal Mn (V) atom with a little contribution from Te atom due to the hybridization between Mn (V) 3d and Te 5p electrons. Electronic structure indicates that Mn-doped ZnTe is a semiconductor, but V-doped ZnTe shows a half-metallic characteristic. We also discuss the difference between electronic and magnetic properties for ZnTe doped with 12.5% and 6.25% Mn.