Nonlinearity in inverse and transverse piezoelectric properties of Pb(Zr0.52Ti0.48)O3 film actuators under AC and DC applied voltages |
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Institution: | 1. MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE, Enschede, the Netherlands;2. Solmates B.V., Auke Vleerstraat 3, 7521 PE, Enschede, the Netherlands;3. International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi, Viet Nam |
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Abstract: | The motion of domain walls is a crucial factor in piezoelectric properties and is usually related to the irreversible and hysteretic behaviors. Herein, we report on the investigation of inverse and transverse piezoelectric coefficients of capacitor-based and microcantilever-based Pb(Zr0.52Ti0.48)O3 films with a change in the DC bias and the AC applied voltage. A large inverse piezoelectric strain coefficient of about 350 p.m./V, and a low strain hysteresis of about 7.1%, are achieved in the film capacitors under a low applied voltage of 2 V (20 kV/cm) which can benefit the actuators for motion control in high-precision systems. The field-dependences of the transverse piezoelectric coefficients, obtained from four-point bending and microcantilever displacement, are in good agreement with each other. The results also reveal that the irreversible domain-wall motion is attributed to the nonlinearity in the field-dependent piezoelectric strain and cantilever displacement. |
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Keywords: | Domain-wall motion Piezoelectric coefficient Nonlinearity Piezoelectric film |
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