含硫宽禁带Ga2Te3基热电半导体的声电输运特性

目前对宽禁带半导体热电材料的研究开始升温, 原因是本征情况下宽禁带半导体往往具有低的热导率和高的Seebeck系数. Ga₂Te₃ 是一类带有缺陷的宽禁带半导体, 其在临界温度680± 10 K和757± 10 K处会参与共析转变和包晶反应, 因此会产生反应热. 本次工作采用少量的S元素等电子替换Ga₂Te₃中的Te元素, 观察到在临界温度附近热焓的变化, 但没有相变发生. 受热焓变化的影响这类材料在临界温度附近出现了较活跃的声电输运行为, 具体表现为热容和Seebeck系数(α)明显增大及热扩散系数(热导率)和电导率下降. 例, 对于x=0.05的材料, 其α值从596 K 时的376.3(μV·K^-1)迅速增大到695 K时的608.2(μV·K^-1), 然后又随温度升高到764 K时迅速降低到213.8(μV·K^-1). 在596 K到812 K范围, Seebeck系数和电导率几乎随温度均呈Z字形变化. 这些输运行为的变化揭示了在Ga₂Te₃基半导体中声子和载流子的临界散射特点, 这种临界散射特征对以后的继续研究具有重要的参考价值.     

High temperature transport processes in lithium niobate

The electrical conductivity of single crystal lithium niobate (LiNbO₃) was determined as a function of temperature for various oxygen partial pressures. The electrical conductivity is proportional to P_o2^−1/4 which can be explained by a defect equilibrium involving singly ionized oxygen vacancies and electrons.

Measurements of electrical transport numbers at 1000°K show the electrical conductivity of LiNbO₃ to be ionic at one atmosphere of oxygen and electronic at low oxygen partial pressures.

Thermoelectric measurements indicate that LiNbO₃ at low oxygen partial pressures is n-type and that the concentration of electrons at 1000°K and in an atmosphere of 50% C0/50% CO₂a is 4 × 10¹⁷cm³ with a mobility of 1.7 cm²V sec.

The diffusion of oxygen in LiNbO₃ was determined as a function of temperature at an oxygen partial pressure of 70 Torr. by measuring O¹⁸/O¹⁶ isotope exchange with the gas phase as a function of time. The diffusion data may be represented by D = 3.03 × 10⁻⁶ exp (−29.4 kcal mole⁻¹/RT)cm²sec. Consideration of the Nernst-Einstein relation for oxygen and the variation in conductivity with Li₂O activity indicate that the ionic conduction is caused by transport of lithium ions.     

Effects of post-annealing on crystalline and transport properties of Bi_2Te_3 thin films

A well-established method is highly desirable for growing topological insulator thin films with low carrier density on a wafer-level scale. Here, we present a simple, scalable method based on magnetron sputtering to obtain high-quality Bi_2 Te_3 films with the carrier density down to 4.0 × 10~(13) cm~(-2). In contrast to the most-used method of high substrate temperature growth, we firstly sputtered Bi_2 Te_3 thin films at room temperature and then applied post-annealing. It enables the growth of highly-oriented Bi_2 Te_3 thin films with larger grain size and smoother interface. The results of electrical transport show that it has a lower carrier density as well as a larger coherent length(～ 228 nm, 2 K). Our studies pave the way toward large-scale, cost-effective production of Bi_2 Te_3 thin films to be integrated with other materials in wafer-level scale for electronic and spintronic applications.     

Anisotropic thermoelectric transport properties in polycrystalline SnSe_2

It is reported that SnSe_2 consisting of the same elements as SnSe, is a new promising thermoelectric material with advantageous layered structure. In this work, the thermoelectric performance of polycrystalline SnSe_2 is improved through introducing SnSe phase and electron doping(Cl doped in Se sites). The anisotropic transport properties of SnSe_2 are investigated. A great reduction of the thermal conductivity is achieved in SnSe_2 through introducing SnSe phase, which mainly results from the strong SnSe_2–SnSe inter-phase scattering. Then the carrier concentration is optimized via Cl doping, leading to a great enhancement of the electrical transport properties, thus an extraordinary power factor of ～5.12 μW·cm~(-1)·K~(-2) is achieved along the direction parallel to the spark plasma sintering(SPS) pressure direction( P). Through the comprehensive consideration on the anisotropic thermoelectric transport properties, an enhanced figure of merit ZT is attained and reaches to ～ 0.6 at 773 K in SnSe_2-2% SnSe after 5% Cl doping along the P direction, which is much higher than ～ 0.13 and ～ 0.09 obtained in SnSe_2-2% SnSe and pristine SnSe_2 samples, respectively.     

退火对Pb辐照Al2O3单晶发光特性的影响

研究了230MeV的²⁰⁸Pb²⁷⁺辐照Al₂O₃样品及随后在600,900,1100K高温条件下退火后的光致发光特性。从辐照样品的测试结果可以清楚地看到在波长为390,450nm处出现了强的发光峰。辐照量为1×10¹³ions/cm²时,样品的发光峰最强。经过600K退火2h后测试结果显示,380nm发光峰剧烈增强,而其他发光峰显示不明显。在900K退火条件下,380nm的发光峰开始减弱,而在360,510nm出现了明显的发光峰,至到1100K退火完毕后380nm的发光峰完全消失,而360,510nm的发光峰相对增强。从被辐照样品的FTIR谱中看到,波数在460~510cm^-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al₂O₃振动吸收峰消失,说明Al₂O₃振动模式被完全破坏。1000~1300cm^-1之间为Al—O—Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动,说明其振动模式受到影响。辐照剂量较小的样品,损伤程度相对较低,经退火晶化后,振动模式基本恢复到单晶状态;辐照剂量较高的样品,损伤程度大,退火处理后表面变得较粗糙,振动模式并未出现,说明结构破坏严重。     

Emerging weak antilocalization effect in Ta0.7Nb0.3Sb2 semimetal single crystals

Weak antilocalization (WAL) effect is commonly observed in low-dimensional systems, three-dimensional (3D) topological insulators and semimetals. Here, we report the growth of high-quality Ta_0.7Nb_0.3Sb₂ single crystals via the chemical vapor transport (CVT). Clear sign of the WAL effect is observed below 50 K, probably due to the strong spin−orbital coupling in 3D bulk. In addition, it is worth noting that a relatively large MR of 120% appears under 1 T magnetic field at T = 2 K. Hall measurements and two-band model fitting results reveal high carrier mobility (>1000 cm²·V⁻¹·s⁻¹ in 2–300 K region), and off-compensation electron/hole ratio of ~8:1. Due to the angular dependence of the WAL effect and the fermiology of the Ta_0.7Nb_0.3Sb₂ crystals, interesting magnetic-field-induced changes of the symmetry of the anisotropic magnetoresistance (MR) from two-fold (≤ 0.6 T) to four-fold (0.8–1.5 T) and finally to two-fold (≥ 2 T) are observed. This phenomenon is attributed to the mechanism shift from the low-field WAL dominated MR to WAL and fermiology co-dominated MR and finally to high-field fermiology dominated MR. All these signs indicate that Ta_0.7Nb_0.3Sb₂ may be a topological semimetal candidate, and these magnetotransport properties may attract more theoretical and experimental exploration of the (Ta,Nb)Sb₂ family.     

Structure and frustrated magnetism of the two-dimensional triangular lattice antiferromagnet Na2BaNi(PO4)2

A new frustrated triangular lattice antiferromagnet Na₂BaNi(PO₄)₂ was synthesized by high temperature flux method. The two-dimensional triangular lattice is formed by the Ni²⁺ ions with S =1. Its magnetism is highly anisotropic with the Weiss constants θ_CW =-6.615 K (H⊥c) and -43.979 K (H||c). However, no magnetic ordering is present down to 0.3 K, reflecting strong geometric spin frustration. Our heat capacity measurements show substantial residual magnetic entropy existing below 0.3 K at zero field, implying the presence of low energy spin excitations. These results indicate that Na₂BaNi(PO₄)₂ is a potential spin liquid candidate with spin-1.     

钾镁胁迫对橡胶幼苗叶片物质成分影响的FTIR表征

养分亏缺是作物产量和质量提升的重要限制因子。我国砖红壤植胶区钾、镁缺乏及其低的有效性长期制约天然橡胶的产、质量。以“热研7-33-97”橡胶幼苗为研究对象,利用傅里叶变换红外光谱（FTIR）对钾、镁胁迫下橡胶树叶片物质组成特征进行研究,分析不同钾、镁胁迫条件下叶片红外光谱图谱特征峰的变化及其差异,探讨钾、镁胁迫对叶片物质成分和结构的影响,以期为钾镁缺乏影响橡胶树生长与生理代谢的机理研究提供参考。结果表明：（1）缺钾条件下,1 554,1 519和1 075 cm-1处的吸收峰缺失,表明橡胶叶片中蛋白质酰胺Ⅱ带、酚类物质、碳水化合物的化学结构受到破坏,并且其他特征峰吸光度与正常处理相比均有不同程度的升高,表明缺钾造成蛋白质、碳水化合物等物质在叶片中大量积累,物质转运效率降低;（2）缺镁条件下,1 554 cm-1处吸收峰向高频方向位移了6 cm-1,说明缺镁造成蛋白质酰胺Ⅱ带的结构发生改变,同时,1 550~1 350 cm-1波数范围内吸收峰相对吸光度明显下降,说明缺镁降低了细胞壁多糖以及含油脂化合物的含量,且该波数范围内的三个吸收峰较其他吸收峰变化敏感,表明该波段可以较好地指示橡胶叶片镁营养状况;（3）钾镁同时缺乏条件下,各吸收峰的相对吸光度和强度明显减弱,1 554,1 519和1 075 cm-1处的吸收峰缺失,说明蛋白质酰胺Ⅱ带、酚类物质、碳水化合物的化学结构受到破坏,1 057 cm-1处吸收峰向高频方向位移了11 cm-1,表明橡胶叶片中果胶类多糖分子结构发生了变化。综上所述,缺钾造成橡胶叶片蛋白质、糖类物质的含量的大量积累,缺镁造成叶片细胞壁多糖和油脂化合物下降,而钾镁同时缺乏时蛋白质、脂类、糖类物质等物质含量均明显下降。研究表明,使用FTIR技术对养分缺乏下的橡胶叶片物质成分定性分析具有一定的可行性,同时可为橡胶钾、镁营养生理代谢的机制研究提供新的思路和方法。     

CeAu2In4: A candidate of quasi-one-dimensional antiferromagnetic Kondo lattice

Needle-like single crystals of CeAu₂In₄ have been grown from In flux and characterized as a new candidate of quasi-one-dimensional Kondo lattice compound by crystallographic, magnetic, transport, and specific-heat measurements down to very low temperatures. We observe an antiferromagnetic transition at T_N ≈ 0.9 K, a highly non-mean-field profile of the corresponding peak in specific heat, and a large Sommerfeld coefficient γ =369 mJ·mol^-1·K^-2. The Kondo temperature T_K is estimated to be 1.1 K, being low and comparable to T_N. While Fermi liquid behavior is observed deep into the magnetically ordered phase, the Kadowaki-Woods ratio is much reduced relative to the expected value for Ce compounds with Kramers doublet ground state. Markedly, this feature shares striking similarities to that of the prototypical quasi-one-dimensional compounds YbNi₄P₂ and CeRh₆Ge₄ with tunable ferromagnetic quantum critical point. Given the shortest Ce-Ce distance along the needle direction, CeAu₂In₄ appears to be an interesting model system for exploring antiferromagnetic quantum critical behaviors in a quasi-one-dimensional Kondo lattice with enhanced quantum fluctuations.     

Large magnetocaloric effect in van der Waals crystal CrBr3

We study the magnetocaloric effect (MCE) in van der Waals (vdW) crystal CrBr₃. Bulk CrBr₃ exhibits a second-order paramagnetic-ferromagnetic phase transition with T_C = 33 K. The maximum magnetic entropy change −ΔS_M near T_C is about 7.2 J·kg⁻¹·K⁻¹ with the maximum adiabatic temperature change ΔT^max_ad = 2.37 K and the relative cooling power RCP= 191.5 J·kg⁻¹ at μ₀H = 5 T, all of which are remarkably larger than those in CrI₃. These results suggest that the vdW crystal CrBr₃ is a promising candidate for the low-dimensional magnetic refrigeration in low temperature region.     

Spin-polarized tunneling in nanostructured La2/3Sr1/3MnO3

We present magnetic and transport properties of nanocrystalline La_2/3Sr_1/3MnO₃ powders prepared by a gel-combustion method using citric acid as the fuel. The coercive magnetic field H_c is significantly different to the field H_c^* for which the magnetoresistance (MR) is maximum. The MR at low fields (LFMR) exhibits a power-law dependence with magnetization, MR∝Mⁿ, with n=2.5–3.3 for temperatures ranging from 5 to 200 K. The results are discussed in terms of a distribution of particle size in our sample.     

Transmission of low-energy (< 10 eV) O ions through Au films on TiO2(110)

In an attempt to identify the fundamental processes that influence ion transport through metallic surface layers, we have studied the transmission of O⁺ ions through discontinuous Au films adsorbed on TiO₂(110). A low energy (< 10 eV) O⁺ ion beam is generated via electron stimulated desorption when an Au-dosed TiO₂(110) substrate is bombarded with a focused 250 eV electron beam. Low energy ion scattering data indicate that Au evaporated under ultrahigh vacuum conditions at 300 K forms three-dimensional clusters on TiO₂(110). As the Au coverage increases, the formation of Au clusters on TiO₂(110) blocks a fraction of the TiO₂ surface and the O⁺ yield is attenuated. However, for high coverages (≥30% Au covered substrate) the O⁺ signal decreases at a faster rate than the TiO₂ open area fraction. We attribute the attenuation of the O⁺ yield for high Au coverages mainly to blocking of O⁺ by Au clusters, to deflection of trajectories by the image force between ions and Au clusters, and to charge transfer between desorbing O⁺ and neighboring Au clusters.     

亚微米Sr2MgSi2O7：Eu2+,Dy3+的水热共沉淀制备及发光性能研究

通过水热共沉淀方法制备了亚微米长余辉发光材料Sr₂MgSi₂O₇：Eu²⁺,Dy³⁺,使用X射线衍射、扫描电镜、光致发光以及热释发光光谱对所合成的材料进行了研究。结果表明：在1 000℃下烧结4 h的样品为四方晶系单相,结晶度随着烧结温度的升高而进一步改善,所制备的材料分散性良好,尺寸在200~300 nm之间。在399 nm激发下,样品呈现出主峰位于467 nm的蓝光发射,来自于Eu²⁺的5d-4f跃迁。在1 100℃烧结获得的样品的长余辉发光优于1 000℃烧结的样品。样品的热释光谱为一个不对称分布的宽带,主峰位于330~340 K之间,热释光谱对应的峰值范围有利于产生长余辉发光。     

Phase transitions and electrical properties of CsH(SO4)0.76(SeO4)0.24 mixed crystals

The study by X-ray diffraction, calorimetry, vibrational and impedance spectroscopy of CsH(SO₄)_0.76(SeO₄)_0.24 new solid solution is presented. Crystals of this composition undergo two phase transitions at T = 333 and 408 K. The last one at 408 K is a superionic-protonic transition (SPT) related to a rapid [HS(Se)O₄⁻] reorientation and fast H⁺ diffusion. A sudden jump in the conductivity plot confirms the presence of this transition. Above 408 K, this high temperature phase is characterized by high electrical conductivity (7 × 10^t-3 Ω⁻ cm⁻¹) and low activation energy (E_a < 0.3 eV).     

荧光粉CaWO4：Eu3+中WO42-与Eu3+间的能量转递

通过高温固相法分别制备了CaWO₄和CaWO₄:1%Eu³⁺ 样品. 测量了样品不同温度(10–300 K)的荧光光谱、荧光衰减曲线和 时间分辨荧光光谱. 样品的荧光光谱表明: 在240 nm紫外光激发下, 两个样品在430 nm处都展现出来源于WO₄^2-的蓝色发射; 样品CaWO₄:Eu³⁺的Eu³⁺(⁵D₀→⁷F_{1, 2, 3,4})的特征发射则归属于WO₄^2-到Eu³⁺ 间的能量传递.由样品室温(300K)荧光衰减曲线发现: 纯CaWO₄的荧光寿命为8.85μs,Eu³⁺掺杂之后WO₄^2-的荧光寿命缩短至6.27μs,这从另一方面证明了WO₄^2-与Eu³⁺间能量传递的存在. 由荧光寿命得到T=300K时, CaWO₄: 1%Eu³⁺中WO₄^2-与Eu³⁺间的能量传递效率(η_ET)为29.2%, 能量传递速率(ω_ET)为4.65×10⁴ s^-1.通过时间分辨荧光光谱, 获得了从WO₄^2-到Eu³⁺之间的能量传递的时间演变过程,当温度由10 K增加到300 K时, 能量传递出现的时间单调变小. 测试了不同温度(10–300 K)对CaWO₄:Eu³⁺的荧光寿命的影响, 发现在10–50K时,Eu³⁺的荧光寿命增加, 但温度超过50K时发生猝灭, 荧光寿命开始下降; WO₄^2-的荧光寿命则是随着温度的升高逐渐缩短. 关键词： 能量传递 红色荧光粉 温度依赖 4：Eu³⁺')" href="#">CaWO₄：Eu³⁺     

Electrical and dielectric properties of Na_(1/2)La_(1/2)Cu_3Ti_4O_(12) ceramics prepared by high energy ball-milling and conventional sintering

We report on the measurements of the electrical and dielectric properties of Na_(1/2)La_(1/2)Cu_3Ti_4O_(12)(NLCTO) ceramics prepared by high energy ball-milling and conventional sintering without any calcination steps. The x-ray powder diffraction analysis shows that pure perovskite-like CCTO phase is obtained after sintering at 1025?C–1075?C. Higher sintering temperatures result in multi-phase ceramics due to thermal decomposition. Scanning electron microscope observations reveal that the grain size is in a range of ~ 3 μm–5 μm for these ceramics. Impedance spectroscopy measurements performed in a wide frequency range(1 Hz–10 MHz) and at various temperatures(120 K–470 K) are used to study the dielectric and electrical properties of NLCTO ceramics. A good compromise between high ε(5.7 × 10~3 and 4.1 × 10~3 at 1.1 k Hz and 96 k Hz, respectively) and low tan δ(0.161 and 0.126 at 1.1 k Hz and 96 k Hz, respectively) is obtained for the ceramic sintered at 1050℃. The observed high dielectric constant behavior is explained in terms of the internal barrier layer capacitance effect.     

(Lu,Y)2SiO5∶Ce3+与SrSO4∶Dy3+材料低温热释光及其测试仪器的研究

为了分析材料在低温下的陷阱能级,获得更多有关缺陷结构的信息,研制了一套由STM32微控制器为核心的低温热释光发光谱测量系统。设计了低温样品室,采用液氮冷却样品;STM32通过控制加热电流,实现样品以恒定速率升温,从而获得低温热释光发光曲线或三维热释光谱。温度测量范围为85~400 K,升温速率范围为0.1~10 K/s。设计了由STM32控制X射线及紫外光源的驱动电路,用于样品的激发。采用高灵敏度CCD实现对三维热释光谱的测量,采用单光子计数器获取二维热释光发光曲线。利用该系统测试了（Lu,Y）₂SiO₅:Ce³⁺（LYSO:Ce³⁺）单晶闪烁体与SrSO₄:Dy³⁺粉末样品的热释光谱及辐射发光光谱。观察到LYSO:Ce³⁺在108,200,380 K左右的热释光峰,发光波长位于390~450 nm之间,是明显的宽带峰。在低温下由于基质的自陷激子（STE）发射所形成的发射峰在166 K时发生猝灭。在309 K时,Ce³⁺发射峰展宽为单一发射峰;SrSO₄:Dy³⁺发光峰温度为178,385 K,发光波长由Dy³⁺离子的能级跃迁决定,在480,575,660,750 nm处呈现窄带发光峰。结果表明,系统人机交互界面友好,实验数据可靠,智能化程度高,操作简单。     

Distribution of charged lunar dust in the south polar region of the moon

Lunar dust is one of the most threatening problems confronting the return of human beings to the moon. In this work we studied the spatial distribution behavior of charged lunar dust in the solar wind plasma environment in the south polar region of the moon and considered the influence of a mini-crater using Spacecraft Plasma Interactions Software. The distribution of dust and plasma at low solar altitude angles of 20° and 0° was studied, and the spatial density of lunar dust was ~10^10.4 m^-3 and ~10^11.5 m^-3, respectively. This is because a higher surface potential will result in transportation of small dust particles and photoelectrons can also neutralize positively charged lunar dust. The dust density in the plasma void region created by a mini-crater with a 5 m high wall was studied. We obtained a quasi-neutral electric environment in the plasma void region of the mini-crater, and the dust density was about a magnitude lower than that in other regions. The dust risk to a spacesuit is much lower on the nightside than on the dayside, but there is severe charged lunar dust transport in the region between light and shade, which is dominated by the difference in surface and plasma potential caused by photoelectrons.     

Large linear magnetoresistance in a new Dirac material BaMnBi_2

Dirac semimetal is a class of materials that host Dirac fermions as emergent quasi-particles.Dirac cone-type band structure can bring interesting properties such as quantum linear magnetoresistance and large mobility in the materials.In this paper,we report the synthesis of high quality single crystals of BaMnBi_2 and investigate the transport properties of the samples.BaMnBi_2 is a metal with an antiferromagnetic transition at T_N = 288 K.The temperature dependence of magnetization displays different behavior from CaMnBi_2 and SrMnBi_2,which suggests the possible different magnetic structure of BaMnBi_2.The Hall data reveals electron-type carriers and a mobility μ(5K)= 1500 cm~2/V·s.Angle-dependent magnetoresistance reveals the quasi-two-dimensional(2D) Fermi surface in BaMnBi_2- A crossover from semiclassical MR~H~2dependence in low field to MR~H dependence in high field,which is attributed to the quantum limit of Dirac fermions,has been observed in magnetoresistance.Our results indicate the existence of Dirac fermions in BaMnBi_2.     

Yb :YAG晶体的闪烁特性

通过不同Yb³⁺掺杂浓度(5%~30%,原子数分数)的Yb:YAG晶体的阴极射线发光谱、衰减时间、光输出及其温度依赖关系的测量,研究了Yb:YAG晶体的闪烁性能.不同Yb³⁺掺杂浓度的Yb:YAG晶体具有不同的光输出和猝灭温度,光输出随Yb³⁺掺杂浓度的增大而降低,猝灭温度则随掺杂浓度的增大而升高.室温下Yb:YAG晶体的发光衰减时间较短,均小于50ns.Yb³⁺掺杂浓度为5%的Yb:YAG晶体具有较高的光输出和较低的猝灭温度.