Magnetic properties of GaAs/δ〈Mn〉/GaAs/In x Ga1 − x As/GaAs quantum wells

The field and temperature dependences of the magnetization of GaAs/δ〈Mn〉/GaAs/In _x Ga_{1 ? x} As/GaAs quantum wells with the δ〈Mn〉 layer separated from the well by a 3-nm GaAs spacer have been studied in the temperature range of 3–300 K in a magnetic field up to 6 T. An external magnetic-field-induced phase transition to a ferromagnetic state with a magnetization hysteresis loop shifted from a zero magnetic field has been found to occur at a temperature below 40 K. A theoretical model is proposed that implies the coexistence of ferromagnetically and antiferromagnetically ordered regions within the GaAs layers.     

Subsurface localization of charge carriers in Si/SiO2/Si x Ge1 − x nanostructures

Analysis of the capacitance-voltage (C-V) characteristics reveals an elevated concentration of charge carriers under the surface of a silicon substrate due to the formation of elastically stressed regions induced in the substrate by Si _x Ge_{1 ? x} nanoislands grown on the preliminarily oxidized Si surface. The C-V characteristics exhibit charge density peaks at a depth from 700 to 1000 nm for Si/SiO₂/Si _x Ge_{1 ? x} structures with various thicknesses of the SiO₂ layer. The results of theoretical calculations of the electron density distribution in the bulk of the silicon substrate correspond on the whole to the C-V characteristics. The state of the interfaces in the structures with different thicknesses of the oxide layer, which determines the effects of surface and interfacial recombination as well as charge carrier scattering, is studied by analyzing the kinetics of decay of a photo-emf signal and the photo-emf distribution over the surface of the structure. The results can be used in the development of various devices based on SiGe with inclusions of oxide layers.     

Characterisation of Ba2In2 − x Sn x O5 + x/2 oxide ion conductors

The Ba₂In_2 − x Sn _x O_5 + x/2 solid solution was confirmed up to x = 1 by solid-state reaction. X-ray diffraction at room and at elevated temperatures, Raman scattering and impedance spectroscopy were used to characterise the samples. The structure refinement of the composition x = 0.1 from neutron diffraction data reveals that tin is preferentially located in the tetrahedral layers of the brownmillerite. Paper presented at the 11th EuroConference on the Science and Technology of Ionics, Batz-sur-Mer, Sept. 9–15, 2007     

Ferromagnetic transition in GaAs/Mn/GaAs/In x Ga1 − x As/GaAs structures with a two-dimensional hole gas

The transport properties of GaAs/Mn/GaAs/In _x Ga_{1 ? x} As/GaAs structures with a layer that is separated from the quantum well and contains Mn impurities in the concentration range 4–10 at % corresponding to the reentrant metal-insulator transition observed in the bulk GaMnAs material [17] have been investigated. The hole mobility in the objects under investigation is more than two orders of magnitude higher than the known values for the GaMnAs semiconductor and GaMnAs-based magnetic heterostructures. This makes it possible to observe Shubnikov-de Haas oscillations, which confirm a two-dimensional character of the hole energy spectrum. The calculated Curie temperature for heterostructures with indirect exchange interaction through a two-dimensional hole channel is in good agreement with the position of the maximum (at 25–40 K) in the temperature dependences of the electrical resistance of the channel. This suggests that two-dimensional holes play an important role in ferromagnetic ordering of the Mn layer under these conditions. The observations of a negative spin-dependent magnetoresistance and an anomalous Hall effect, whose magnitude correlates well with the results of theoretical calculations for two-dimensional ferromagnetic systems based on III-Mn-V, also indicate a significant role of the two-dimensional channel in ferromagnetic ordering.     

Phase transitions in La1−x CaxMnO3−x/2 manganites

The crystal structure parameters and magnetic and electrical properties of La_1?x Ca_xMnO_3?x/2 reduced manganites with 0≤x≤0.5 are established. These investigations contribute to the understanding of magnetic interactions in manganites without Mn⁴⁺ ions. It is found that these manganites show a long-range antiferromagnetic order up to x=0.09 and transform into spin glasses at 0.09<x≤0.35. The compositions in the range 0.35<x≤0.5 show a strong increase in the spontaneous magnetization and critical point associated with the appearance of spontaneous magnetization and can therefore be viewed as inhomogenious ferromagnets. The magnetic and crystal structure peculiarities of La_0.5Ca_0.5MnO_2.75 are established by the neutron diffraction method. The strongly reduced samples show a large magnetoresistance below the point where the spontaneous magnetization develops. The magnetic phase diagram of La_1?x Ca_xMnO_3?x/2 is established by magnetization measurements. The magnetic behavior is interpreted assuming that the Mn³⁺-O-Mn³⁺ magnetic interaction is anisotropic (positive-negative) in the orbitally ordered phase and isotropic (positive) in the orbitally disordered phase. Introduction of the oxygen vacancies changes the magnetic interaction sign from positive to negative, thereby leading to a spin glass state in strongly reduced compounds. The results obtained reveal unusual features of strongly reduced manganites such as a large ferromagnetic component, a high magnetic ordering temperature, and a large magnetoresistance despite the absence of Mn³⁺-Mn⁴⁺ pairs. In order to explain these results, the oxygen vacancies are supposed to be ordered.     

Preparation and dielectric study of high-quality PLZT x/65/35 (x = 6,7,8) ferroelectric ceramics

Ferroelectric ceramics are an important class of solid-state materials as they exhibit a wide range of applications. Various compositions of the ferroelectric ceramic (Pb,La)(Zr,Ti)O₃ (known as PLZT) were prepared and their dielectric properties were studied. It is difficult to prepare phase-pure PLZT compounds by the direct solid-state reaction method. Its preparation required the use of a special 'covering method' adopted to facilitate phase formation using the solid-state reaction method. High-quality PLZT samples of different compositions (x/65/35, x=6,7,8) prepared using the 'covering method' without adding any excess PbO (to avoid PbO loss) resulted in single-phase formation. The 8/65/35 composition has yielded a dielectric constant of 11273 at T_C, which is in good agreement with the literature value [1, 2]. Also, as the lanthanum content x was varied from 6 to 8 mole %, T_C decreased and the low-frequency (1 kHz) room-temperature dielectric constant value increased. The present publication gives a detailed account of the evolution of the phase-pure PLZT compositions and their physical properties.     

ф(x)=1/x ∫0x(ydy)/(ey-1)数值表

关键词：     

Magnetic and structural transition of Ni50+xMn25−x/2Ga25−x/2 (x=2–5) alloys

Magnetic and structural transitions of non-stoichiometric Ni_50+xMn_25−x/2Ga_25−x/2 (x=2–5) alloys are systematically investigated. Differential scanning calorimetry and modified thermogravimetry (TG) are used to measure magnetic and structural transitions simultaneously. The structural transition temperatures increase monotonically with increasing Ni substitution for Mn and Ga. Different magnetic transition sequences on heating were observed from ferromagnetic martensite to ferromagnetic autensite, then to paramagnetic autensite, from ferromagnetic martensite to paramagnetic austensite or from ferromagnetic martensite to paramagnetic martensite, respectively. Three kinds of NiMnGa alloys were obtained according to the sequence of the structural and magnetic transition, whose structural transition temperatures are lower, equal to or higher than the magnetic transition temperatures.     

Strained In x Ga1−x As/GaAs multiple quantum wells grown by MOVPE

Luminescence properties of strained In _x Ga_1−x As/GaAs multiple quantum wells of different thickness and In content, prepared by metal organic vapour phase epitaxy were studied. The influence of the quantum well material composition on the shape of luminescence spectra was investigated. The experimental results were fitted by the Model Solid Theory. This fit was improved by the use of adjustedQ parameter. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998. This work was supported by Grant Agency of Czech Republic under grants numbers 202/98/0074, 102/99/0414 and Grant Agency of Academy of Sciences No. A 10110807/1998.     

EPR study on the La2/3Ca1/3Mn1−x Cu x O y system

The interaction between Mn and Cu ions is studied by measuring the resistance and electron paramagnetic resonance (EPR) at different temperatures of the Cu-doped compound La_2/3Ca_1/3Mn_1−xCu_xO_y. A new transition inR-T curve and substantial enhancement in magnetoresistance are induced by the substitution of Mn ions by Cu ions. The EPR measurement shows that two resonance signals appear at temperature lower than the spin-ordering temperature of Mn ions. A tentative interpretation for the observed phenomena is proposed by considering the interaction between the Cu/Mn ions besides the Mn³⁺/Mn⁴⁺ ions.     

LaAg x In1−x

The structures of LaAg _x In_1–x alloys withx=0.75, 0.89 are determined by neutron diffraction on powder samples. The space group isI4/mmm (D _4h ^/17 ). The lattice constants splitting, the order parameter and the mean square vibrational amplitudes of the atoms are given in the temperature range from 20 KT300 K.     

ф(x)=(1/x)integral from n=0 to x((ydy)/(e~y-1))数值表

纯金属多晶体中原子的热振动对X射线衍射强度的影响,通常由所谓Debye-Waller因子e~(-2M)来表达,其中h=普朗克常数=(6.6252±0.005)×10~(-27)尔格一秒;k=玻耳兹曼常数=(1.3804±0.0001)×10~(-16)尔格/度;m=原子质量;该金属在特定状态下的德拜示征温度。 因此中φ(x)函数对于强度计算、示征温度的计算都很有用,目前我们所能找到的φ(x)值表失之太简,x的间距太大。为了解决研究工作的需要,我们另作了计算,方法如下:     

Electric and magnetic behaviour in double doped La2/3＋4x/3Sr1/3-4x/3Mn1-xMgxO3

The double-doped La2/3＋4x/3Sr1/3-4x/3Mn1-xMgxO3 samples with fixed Mn^3＋/Mn^4＋ ratio equal to 2/1 are investigated by means of magnetism and transport measurements. Phase separation is observed at temperature higher than T^onset c for x = 0.10 and 0.15. For x = 0.10, rather strong phase separation induces drastic magnetic random potential and results in the localization of carriers. Thus, the varlable-range hopping process dominates. For other samples, there is no or only weak phase separation above T^onset c. Thus, thermal activation mechanism is responsible for the high temperature transport behaviour. For x = 0.20 and 0.25, unexpected AFM behaviour is observed at low temperature. All these results are well understood by considering the special role of the ＂double-doping＂.     

Fep(x, Q2-Fen(x, Q2)的行为和标度性破坏参数

利用在文章[1]中给出的强子的价夸克分布函数的解析表达式, 我们讨论了电生过程的非单态分量, F^ep-F^en, 标度性破坏参数F^ep(x, Q²), 以及一些其它的量. 文中也给出了与实验数据的比较.     

Two-dimensional electrons at the n-GaAs/Al x Ga1−x As heterointerface under uniaxial compression

The transport characteristics and quantum oscillations of magnetoresistance have been studied in n-(001)GaAs/Al _x Ga_1?x As heterostructures at liquid helium temperatures and uniaxial compressions up to 3.5 kbar. Under such loading conditions, the density of two-dimensional (2D) electrons at the heterointerface is determined primarily by a piezoelectric field induced in the [001] direction. The screening of this field leads to an increase in the 2D electron density at the heterointerface under compression along the [110] axis and to a decrease in this density, under compression along the $[1\bar 10]$ axis. The formation and subsequent redistribution of a compensating charge at the heterointerface are impeded, which leads to the development of relaxation processes in the stressed system at sufficiently high pressures. The pressure dependences of the anisotropic mobility and the effective cyclotron mass of 2D electrons show that their energy spectrum remains isotropic and the dispersion obeys a parabolic law in the pressure range studied.     

Electron–hole superlattices in GaAs/Al x Ga1− x As multiple quantum wells

A GaAs/Al _x Ga_{1? x} As semiconductor structure is proposed, which is predicted to superconduct at T _c?≈?2?K. Formation of an alternating sequence of electron- and hole-populated quantum wells (an electron–hole superlattice) in a modulation-doped GaAs/Al _x Ga_{1? x} As superlattice is considered. This superlattice may be analogous to the layered electronic structure of high-T _c superconductors. In the structures of interest, the mean spacing between nearest electron (or hole) wells is the same as the mean distance between the electrons (or holes) in any given well. This geometrical relationship mimics a prominent property of optimally doped high-T _c superconductors. Band bending by built-in electric fields from ionized donors and acceptors induces electron and heavy-hole bound states in alternate GaAs quantum wells. A proposed superlattice structure meeting this criterion for superconductivity is studied by self-consistent numerical simulation.     

Negatron effects in CdSe1 − x Te x and ZnS1−x Se x films

Various negatron effects in films of alloys of II–VI compounds deposited from solutions as a function of the deposition mode and heat treatment are studied. It is found that the negative photocapacitance effect, which was first discovered in ZnS_1?x Se _x films, and the slowly relaxing negative photoelectric effects, which are caused by the transition of electrons located in a nanoscale surface layer from the shallow energy levels of trapping centers to deeper levels with a lower polarizability and by the presence of nanoscale clusters in these materials, which play the role of a “reservoir” for minority charge carriers, occur according to a single mechanism. A model to explain the basic laws of negative photoconductivity in CdSe_{1 ? x} Te _x films deposited from a solution is proposed. Negative residual conductivity is explained in terms of double-barrier relief model, while negative differential photoconductivity is attributed to the presence of nanoscale electric domains.     

Studying the effects of temperature and radiation on the Al x O1 − x /TiNC system

The penetration of hydrogen through protective layers of aluminum oxide fixed on the surface of nanocrystalline (NC) titanium is studied. A film 400 nm thick is prepared by the magnetron sputtering. Radiation- and thermally-induced gas release are employed. It is found that the Al _x O_1?x film prevents the release of hydrogen from a sample under both radiation and thermal effects. The temperature of hydrogen extraction from metal hydride accumulators can be reduced by 200–250°C, provided that heating is performed under conditions of surface irradiation by electrons with energies of ～30 keV and current densities of 2 to 3 μA cm^?2.     

Elastic stress fields caused by a dislocation in Ge x Si1−x /Si film-substrate system

The elastic stress fields caused by a dislocation in Ge_xSi_(1-x) epitaxial layer on Si substrate are investigated in this work. Based on the previous results in an anisotropic bimaterial system,the image method is further developed to determine the stress field of a dislocation in the film-substrate system under coupled condition. The film-substrate system is firstly transformed into a bimaterial system by distributing image dislocation densities on the position of the free surface. Then,the unknown image dislocation densities are solved by using boundary conditions,i.e.,traction free conditions on the free surface. Numerical simulation focuses on the Ge0.1Si0.9/Si film-substrate system. The effects of layer thickness,position of the dislocation and crystallographic orientation on the stress fields are discussed. Results reveal that both the stresses σxx,σxz at the free surface and the stress σxy,σyy,σyz on the interface are influenced by the layer thickness,but the former is stronger. In contrast to the weak dependence of stress field on the crystallographic orientation the stress field was strongly affected by dislocation position. The stress fields both in the film-substrate system and bimaterial system are plotted.     

Crystallisation of magnetron sputtered amorphous Si1− x C x films (x = 1/3) studied by grazing incidence X-ray diffractometry

The crystallisation of amorphous Si_{1? x} C _x films (x = 1/3) produced via magnetron sputtering on silicon substrates was investigated. Grazing incidence X-ray diffractometry was used to analyse the crystalline precipitates obtained after annealing at temperatures between 1200°C and 1350°C. After annealing times of 15 h at 1200°C and 15 h at 1350°C, crystallisation of SiC is complete. The average crystallite size, d, was determined using the Scherrer equation. The rate constants for the initial growth of the crystallites were determined by straight line fits in the d ? t diagrams (t being the annealing time), which obey the Arrhenius law. The activation enthalpy of 4.0 ± 0.7 eV is, within error limits, the same as that found for the growth of silicon carbide crystallites in magnetron sputtered Si_{1? x} C _x films (x = 1/2).