2089 nm调Q锁模Tm,Ho∶CaYAlO4激光器

首次采用氧化石墨烯可饱和吸收体作为锁模启动元件在Tm,Ho∶CaYAlO4激光器中实现了稳定的被动调Q锁模运转。在3%输出耦合镜下,Tm,Ho∶CaYAlO4固体激光器获得了最低为293 mW的连续光出光阈值。在腔内引入氧化石墨烯可饱和吸收体后,当吸收抽运功率增大到1859 mW时,Tm,Ho∶CaYAlO4激光器进入稳定的调Q锁模运转状态。当抽运功率达到3 W时,获得中心波长为2089 nm、斜效率为10.1%、对应最大输出功率为213 mW的被动调Q锁模脉冲,重复频率为100 MHz,调Q包络中锁模脉冲的调制深度接近100%。     

基于WS_2可饱和吸收体的调Q锁模Tm,Ho:LLF激光器

采用聚乙烯醇塑料膜为基质的WS_2作为可饱和吸收体,在Tm,Ho:LiLuF_4全固态激光器中实现了被动调Q锁模运转.以掺钛蓝宝石激光器作为抽运源,当最大吸收抽运功率为2.6 W时,激光输出功率为156 mW,典型的调Q脉冲包络重复频率为25 kHz,脉宽约为300μs.当吸收功率大于1.39 W时,进入稳定调Q锁模运转,对应锁模脉冲序列的重复频率为131.6 MHz,调整深度接近100%.结果表明:WS_2可以作为2μm波段全固态激光器锁模的吸收体材料.     

激光二极管抽运Cr4+:Nd3+:YAG自锁模自调Q激光器

采用光纤耦合半导体激光抽运,实现了Cr4+:Nd3+:YAG自锁模自调Q激光器1.06üm激光输出.当抽运功率超过阈值2.83 W时,激光器便运转在调Q锁模状态,其锁模调制深度达到80%以上.当抽运功率最大为5.72 W时,平均输出功率为233 mW,相应调Q包络的单脉冲能量为16.5üJ,调Q包络的脉冲宽度大约为120 ns.调Q包络中锁模脉冲之间的间隔为2.8 ns,这与光子在谐振腔内的往返时间相一致,对应的重复率为357 MHz,锁模脉冲宽度估计为560 ps.利用双曲正割函数,考虑腔内光子数密度的空间高斯分布、增益介质的受激辐射寿命和饱和吸收体的激发态寿命对激光特性的影响,建立了描述Cr4+:Nd3+:YAG晶体自调Q自锁模动力学过程的速率方程组.数值求解该方程组,与实验结果符合较好.     

基于单壁碳纳米管调Q锁模低阈值Tm,Ho:LiLuF_4激光器

采用垂直生长法制作的单壁碳纳米管作为可饱和吸收体,结合特殊的低阈值谐振腔设计,首次在Tm,Ho:LiLuF_4全固态激光器中实现了低阈值自启动被动调Q锁模运转.以波长可调的掺钛蓝宝石固体激光器作为抽运源,选用1.5%,3%和5%的输出耦合镜,获得了出光阈值低至52,59和62mW的连续光输出.采用3%输出耦合镜,获得了阈值低至250mW的稳定调Q锁模脉冲输出,调Q包络的脉宽为2μs,调Q包络下锁模脉冲重复频率178.6MHz,最大输出功率154mW,最大的单脉冲能量为0.86nJ,调制深度接近100%.     

基于WS2可饱和吸收体的脉冲激光器研究

利用WS₂的可饱和吸收特性,在激光二极管侧面抽运Nd:YAG固体激光器Z型腔结构中分别实现了被动调Q和被动调Q锁模运转。实验表明:当泵浦电流为9.5 A时,开始启动调Q运转,当泵浦电流大于9.8 A时,调Q激光脉冲趋于稳定。当泵浦电流为12.8 A时,被动调Q输出的最大平均功率为466 mW,最窄脉冲宽度为3.205 μs,对应的重复频率为71.70 kHz,此时最大单脉冲能量为6.5 μJ。当泵浦电流达到13.4 A时,激光器实现调Q锁模运转。调Q锁模的最高输出功率为590 mW,调Q包络频率为71.98 kHz,单个调Q包络内的脉冲串重复频率123.1 MHz,每个调Q包络中包含369个脉冲,单脉冲能量为22.2 nJ。结果表明WS₂材料可以作为可饱和吸收体用于固体激光器中。     

低温GaAs被动调Q锁模Nd:Gd0.42 Y0.58VO4 混晶激光器特性研究

采用低温生长GaAs晶体作为被动饱和吸收体兼输出镜,实现了Nd:Gd0.42Y0.58VO4混晶激光器的调Q锁模运转.研究了Nd:Gd0.42Y0.588VO4激光器的基频运转特性.在输出镜透射率T=10%、腔长L=40 mm的情况下,当抽运功率为8.6 W时,获得激光输出功率3.78 W,光-光转换效率为43.9%.并测量了Nd:Gd0.42Y0.58VO4混晶被动调Q激光器的输出特性.实验结果表明激光器调Q运转阈值为2 W,当抽运功率为3.7 W时,激光器出现调Q锁模行为;当抽运功率为8.6 W时,激光器调Q锁模深度达70%以上,对应的脉冲包络重复频率为670 kHz,半峰全宽为180 ns,平均输出功率为1.35 W,光-光转换效率为15.7%.     

基于双壁碳纳米管低阈值1895nm锁模激光器

结合特殊设计的低阈值五镜折叠腔,利用垂直生长法自制的双壁碳纳米管,并将其作为可饱和吸收体在Tm,Ho…LLF激光器中实现了连续锁模运转。在连续激光运转下,吸收抽运阈值低至59 mW,光-光转化效率为30.09%。在腔内插入饱和吸收体后,吸收抽运阈值提高至107mW。当吸收抽运功率大于1562mW时,激光运转进入稳定的连续锁模状态,对应锁模脉冲的重复频率为100 MHz,脉冲宽度约为515ps;当吸收抽运功率达到2 W时,最高输出功率为234mW,中心波长为1895nm,对应最大单脉冲能量为2.34nJ。     

离子注入GaAs实现双包层掺镱光纤激光器被动调Q锁模

用离子注入的半绝缘GaAs晶片作为吸收体和输出镜，在双包层掺镱光纤激光器上实现了调Q锁模. 离子注入的能量为400keV的As+离子，注入剂量为1016/cm2，然后在600℃下退火20min. 当抽运功率为5W时, 脉冲平均输出功率为200mW, 调Q包络重复频率为50kHz, 半高宽为4μs，锁模脉冲重复频率为15MHz. 关键词： 离子注入GaAs 掺镱光纤激光器 被动调Q锁模     

连续锁模Nd：YVO4激光器实现1 GHz高频输出

LD抽运全固体Nd:YVO4激光器在连续锁模状态运转下获得了高达1 GHz的重复频率.实验中采用半导体可饱和吸收镜作为锁模元件.利用透过率只有0.8%的输出镜以及可获得较小抽运光斑的2 W LD作为抽运源来优化激光器设计,有效地抑制了调Q锁模状态的运转.低的激光器振荡阈值（35 mW）和连续锁模阈值(0.8 W)显示了饱和吸收体低的插入损耗和激光器合理的设计.在最大抽运1.6 W时获得了210 mW的平均输出功率.     

连续锁模Nd∶YVO4激光器实现1 GHz高频输出

LD抽运全固体Nd∶YVO4激光器在连续锁模状态运转下获得了高达1 GHz的重复频率.实验中采用半导体可饱和吸收镜作为锁模元件.利用透过率只有0.8%的输出镜以及可获得较小抽运光斑的2 WLD作为抽运源来优化激光器设计,有效地抑制了调Q锁模状态的运转.低的激光器振荡阈值(35 mW)和连续锁模阈值(0.8 W)显示了饱和吸收体低的插入损耗和激光器合理的设计.在最大抽运1.6 W 时获得了210 mW的平均输出功率.     

色散管理掺铥光纤激光器高能量脉冲的产生

设计了一种基于色散管理的掺铥光纤激光器。通过调节泵浦功率以及腔内偏振态，首先实现了稳定的展宽脉冲输出，中心波长和脉冲宽度分别为1 939.4 nm和482 fs。最大输出功率为15 mW，对应的单脉冲能量为0.52 nJ。增加泵浦功率到645 mW时，通过适当调节偏振控制器可以实现类噪声脉冲锁模，中心波长为1 940.1 nm。所实现的锁模脉冲具有飞秒量级的尖峰以及皮秒量级的基底。最大输出功率为20.4 mW，相对应的单脉冲能量为0.7 nJ。相比于传统孤子，采用色散管理所实现的锁模脉冲具有更高的脉冲能量。此外，所设计的掺铥光纤激光器可作为理想的主振荡功率放大以及啁啾脉冲放大结构的种子源，进一步提高脉冲能量，拓展2 μm高能光纤激光器的实际应用。     

Diode-Pumped Passively Mode-Locked 1079 nm Nd:CaGdAlO_4 Laser

We demonstrate a diode-pumped passively cw mode-locked NdiCaGdAlO_4 laser operating at 1079 nm with a semiconductor saturable absorber mirror for the first time to the best of our knowledge.The threshold pump power of the laser is 180 mW.A maximum average output power of 93 mW is obtained under the pump power of1.94 W.The pulse duration of the mode-locked pulses is 3.1 ps and the repetition rate is 157 MHz.     

Diode-pumped passively Q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser with a GaAs saturable absorber

By using a-cut Nd:Lu_0.15Y_0.85VO₄ mixed crystal as laser gain medium, a diode-pumped passively Q-switched and mode-locked (QML) laser with a GaAs saturable absorber in a Z-type folded cavity is demonstrated for the first time. The Q-switched mode-locked laser pulses with about 90% modulation depth are obtained as long as the pump power reached the oscillation threshold. The repetition rate of the passively Q-switched pulse envelope ranges from 50 to 186 kHz as the pump power increases from 0.915 to 6.520 W. Under an incident pump power of 6.52 W, the QML pulses with the largest average output power of 694 mW, the shortest pulse width of 200 ns and the highest pulse energy of 3.73 μJ are obtained. The mode-locked pulse width inside the Q-switched envelope is estimated to be about 275 ps. The experimental results show that Nd:Lu_0.15Y_0.85VO₄ is a promising mixed crystal for QML laser.     

532-nm picosecond pulse generated in a passively mode-locked Nd:YVO_4 laser

A diode-pumped continuous-wave （CW） mode-locked Nd：YVO4/KTP green laser with semiconductor saturable absorber mirror （SESAM） is demonstrated. The maximum output power of CW mode-locked green laser is obtained to be 552 mW at the incident pump power of 7.25 W, corresponding to an opticai-optical conversion efficiency of about 7.6%. The 532-nm CW mode-locked pulse duration is estimated to be about 8.4 ps with the repetition rate of 87 MHz.     

Highly efficient, low-cost femtosecond Cr3+ :LiCAF laser pumped by single-mode diodes

We describe efficient continuous-wave (cw) and cw mode-locked operations of a Cr3+ :LiCAF laser, pumped by inexpensive single spatial mode laser diodes. Up to 280 mW of cw output power was obtained with 570 mW of absorbed pump power, with a corresponding slope efficiency of 54%. Continuous tuning between 765 and 865 nm was demonstrated using a fused silica prism. A semiconductor saturable absorber mirror was used to initiate and sustain stable, self-starting, mode-locked operation. In cw mode locking, the laser produced 72 fs (FWHM) duration pulses, and 1.4 nJ pulse energy, at an average output power of 178 mW. Electrical to optical conversion efficiencies of 7.8% in mode-locked operation and 12.2% in cw operation were demonstrated.     

Q-switched and continuous-wave mode-locking of a diode-pumped Nd:Gd0.64Y0.36VO4−Cr4+:YAG laser

We report on a diode-pumped passively mode-locked Nd:Gd_0.64Y_0.36VO₄ laser with a Cr⁴⁺:YAG saturable absorber. Q-switched mode locking (QML) with 90% modulation depth was obtained. The peak power of the mode-locked pulse near the maximum of the Q-switched envelope was estimated to be about 1.7 MW at the pump power of 12 W. Besides QML, continuous-wave mode locking was also experimentally realized, for the first time to our knowledge, in the laser under a strong intracavity pulse energy fluence. The mode-locked pulse width is about 2.96 ps at a repetition rate of 161.3 MHz.