嵌岩桩桩端承载力探讨

以往嵌岩桩的试验资料表明,当上覆岩土层较薄、嵌岩桩的入岩深度较小时,嵌岩桩的极限端承力对桩的承载能力起主导作用。为求出桩端极限承载力的表达式,本文将嵌岩段以上岩土层自重视为作用在基岩半平面上的均布荷载,把桩端合力分解为相对简单的荷载作用于基岩平面上,利用滑移线理论并通过叠加的方法分析出桩端基岩破坏时的最危险点。然后根据Mindlin课题求出该点的应力,运用Griffith准则的Murrell推广导出桩端极限承载力的公式,并指出了此公式的适用范围。最后结合工程实际进行了对比分析,表明本文方法具有一定的实用性。     

管式炉中半导体激光器巴条Au80Sn20焊料封装研究

为了提高半导体激光器的封装质量和效率,引入管式炉利用夹具进行批量封装。由于封装质量的好坏直接影响半导体激光器的输出特性和使用寿命,利用MOCVD生长808 nm芯片,重点分析了管式炉温度和封装时间对半导体激光器巴条双面金锡封装质量的影响。利用X射线检测、结电压、光电特性参数和smile效应测试手段,确定了管式炉封装半导体激光器巴条的最优封装条件,为以后的产业化提供了指导意义。     

Graphene oxide for diode-pumped Tm:YLF passively Q-switched laser at 2 μm

A diode-pumped Tm:YLF passively Q-switched laser at 2 μm was first demonstrated by using graphene oxide(GO) as a saturable absorber(SA).In this letter,continuous-wave(CW) laser and pulse laser performances were studied meticulously and systematically.It reasonably showed the dependence of the pulse duration,pulse energy,and pulse repetition rate on the absorbed power.A maximum repetition rate of 38.33 kHz and a single pulse energy of 9.89 μJ were obtained.     

大功率半导体激光器可靠性研究和失效分析

对自主研发的975 nm波长的COS封装的大功率半导体单管激光器进行了10,12,14 A的电流步进加速应力试验,应用逆幂律模型和指数分布的理论对试验结果进行了分析,计算出在8 A的电流下,器件的平均寿命为28 999 h。研究了器件的失效形式和老化前后的温升、偏振度的变化,结果表明:失效形式主要有体内退化、腔面退化、与焊接有关的退化;老化后的器件的结温上升增多,偏振度下降10%左右。     

1.5-MHz repetition rate passively Q-switched Nd:YVO_4 laser based on WS_2 saturable absorber

A transmission-type tungsten disulfide(WS_2)-based saturable absorber(SA) is fabricated and applied to passively Q-switched Nd:YVO_4 laser.The WS_2 nanosheets are deposited on a quartz substrate by the vertical evaporation method.By inserting the WS2 SA into the plano-concave laser cavity,we achieve 153-ns pulses with an average output power of1.19 W at 1064 nm.To the best of our knowledge,both of them are the best results among those obtained by the Q-switched solid-state lasers with WS_2-based absorbers.The repetition rate ranges from 1.176 MHz to 1.578 MHz.As far as we know,it is the first time that MHz level Q-switched pulses have been generated in all solid state lasers based on low-dimensional materials so far.     

Using Reduced Graphene Oxide to Generate Q-Switched Pulses in Er-Doped Fiber Laser

Using the reduced graphene oxide(rGO) as a saturable absorber(SA) in an Er-doped fiber(EDF) laser cavity,we obtain the Q-switching operation. The rGO SA is prepared by depositing the GO on fluorine mica(FM) using the thermal reduction method. The modulation depth of rGO/FM is measured to be 3.2%. By incorporating the rGO/FM film into the EDF laser cavity, we obtain stable Q-switched pulses. The shortest pulse duration is3.53 μs, and the maximum single pulse energy is 48.19 nJ. The long-term stability of working is well exhibited.The experimental results show that the rGO possesses potential photonics applications.     

Zn杂质扩散诱导AlGaInP/GaInP量子阱混杂

杂质扩散诱导量子阱混杂技术可用于制作腔面非吸收窗口,提高大功率半导体激光器的输出功率.以Zn2As2为扩散源,采用闭管扩散方式,在550℃下对650 nm半导体激光器的外延片进行了一系列Zn杂质扩散诱导量子阱混杂的实验.实验发现,随着扩散时间从20～120 min,样品光致发光(PL)谱蓝移偏移增加,峰值波长蓝移53 nm;当扩散时间超过60 min后,样品的PL谱中不仅出现了常见的蓝移峰,同时还出现了红移峰,峰值波长红移32 nm.分析表明PL谱蓝移来自Zn扩散引起的AlGaInP/GaInP间的量子阱混杂;红移来自Zn杂质扩散对样品中Ga0.51In0.49P缓冲层的影响.还研究了扩散温度(550℃)和扩散时间对样品晶体品质的影响,并在理论上计算了AlGaInP/GaInP量子阱混杂巾的Al-Ga的互扩散系数.     

三波长合束单管激光器光纤耦合模块设计

为了研究以单管半导体激光器为基本单元的高功率、高亮度波长合束光纤耦合模块,设计出新型光纤激光器泵浦模块,基于ZEMAX光学设计软件等设计了一种由30支单管半导体激光器组成、可输出3种波长光束的光纤耦合模块。将经快慢轴整形、空间合束、波长合束、光路转向及聚焦的光束耦合进入芯径105μm、数值孔径0.22的普通光纤,最终得到尾纤输出端高于357.91 W的输出功率,光纤耦合效率为99.42%,光功率密度为27.24 MW/cm~2-stras。为了验证模块的实际操作的可行性,分析了光纤端面法线与入射光束之间的夹角对耦合效率的影响,结果显示该夹角对模块的耦合效率影响较小。同时,应用ANSYS软件对模块散热情况的分析结果可知,模块散热性能良好。故该模块各项性能良好,可靠性较高,实现了高功率、高亮度、多波长的多单管半导体激光器光纤耦合模块的设计目的。     

Reduced graphene oxide as saturable absorbers for erbium-doped passively mode-locked fiber laser

We demonstrate a nanosecond mode-locked erbium-doped fiber laser(EDFL)based on a reduced graphene oxide(RGO)saturable absorber(SA).The RGO SA is prepared by depositing the graphene oxide(GO)on fluorine mica through thermal reduction of GO.A scanning electron microscope(SEM),Raman spectrometer,and x-ray photoelectron spectroscopy(XPS)are adopted to analyze the RGO characteristics.The results show that the reduction degree of graphene oxide is very high.By embedding the RGO SA into the EDFL cavity,a stable mode-locked fiber laser is achieved with a central wavelength of 1567.29 nm and repetition rate of 12.66 MHz.The maximum output power and the minimum pulse duration are measured to be 18.22 mW and 1.38 ns respectively.As far as we know,the maximum output power of18.22 mW is higher than those of other nanosecond mode-locked oscillators reported.Such a nanosecond pulse duration and megahertz repetition rate make this mode-locked erbium-doped fiber laser a suitable seed oscillator for high-power applications and chirped pulse amplifications.