氮掺杂金刚石{100}晶面的缺陷发光特性

氮是金刚石中最常见的杂质之一, 其对金刚石的缺陷发光具有重要的影响. 氮可以与金刚石中的本征缺陷形成复合缺陷. 本文首先利用阴极射线发光照片(CL)对一个高温高压合成的氮掺杂金刚石进行表征, 发现{100}晶面为蓝色, 然后利用透射电子显微镜(TEM)对该晶面进行电子辐照及后续退火处理, 以引入本征点缺陷进而形成含氮的复合缺陷, 并利用低温光致发光光谱(PL光谱)表征其缺陷发光特性, 发现该晶面主要以氮-空位复合缺陷(NV中心)发光为主, 并伴随着较弱的503 nm发光. 关键词： 金刚石 缺陷 发光     

温度对Ib型和IIa型金刚石大单晶(100)表面特征的影响

本文在5.6 GPa, 1250–1340 ℃的条件下, 利用温度梯度法, 以FeNiMnCo 合金为触媒, 沿籽晶的(100)晶面成功合成了不同晶形的优质Ib型和IIa型金刚石大单晶. 利用激光拉曼附件显微镜, 分别对上述不同温度下合成的两类金刚石样品上表面(100)面的中心区域及棱角区域进行观察分析. 研究发现, Ib型和IIa型金刚石大单晶(100)晶面上从中心到棱角处黑色纹路的分布逐渐变黑变密集; 另外, 随着金刚石合成温度的升高, Ib型金刚石大单晶(100)面上黑色纹路由稀疏逐渐变稠密, 而IIa型金刚石大单晶的黑色纹路较为稀疏; Ib型金刚石大单晶的形貌特征表现为从低温晶体的不规则分布过渡到中温、高温晶体的典型树枝状分布. IIa型金刚石大单晶(100)面特征随温度变化规律与Ib型的类似. 这两类金刚石大单晶表面特征的差异可能是由于IIa 型金刚石具有比Ib型更小的生长速度和更少的氮含量. 最后, 对两类塔状金刚石大单晶进行拉曼光谱测试分析, 结果表明IIa型金刚石大单晶的品质较Ib型金刚石大单晶好.     

电子辐照金刚石的光致发光研究

本文利用488 nm及325 nm激光器比较了超纯、氮掺杂及硼掺杂三种金刚石经电子辐照所形成的光学中心. 结果表明, 金刚石中引入施主或受主原子后, 形成了新的光学中心, 如NV, DB1中心.     

硼/氮原子共注入金刚石的原子级研究

利用Tersoff势和分子动力学方法研究了室温下500 eV的能量粒子硼(4个)和氮(8个)共注入金刚石晶体中晶体结构的变化特征和缺陷分布特征.结果表明：粒子注入金刚石后产生的空位比间隙原子更靠近晶体的近表层分布；间隙原子主要以四面体间隙(T形)和哑铃状分裂间隙的形式存在于晶体中，T形间隙结构更容易存在，并且大部分间隙原子富集在空位的周围；注入金刚石中的硼原子和氮原子有78%左右处于替代位置,硼、氮原子之间的键长比完整金刚石结构的键长短13%，硼氮原子成键有利于减少金刚石晶格的畸变程度.     

金刚石中GR1中心的光致发光特性研究

金刚石中空位存在中性、负电及正电三种状态, 且空位-空位、空位-杂质之间可以形成更多复合缺陷. 利用低温光致发光光谱研究了金刚石经辐照产生的中性空位的发光特性, 对进一步研究其他复合缺陷的发光性能提供了重要的指导意义. 关键词： 金刚石 中性空位 GR1中心     

金刚石集群NV色心的光谱特征及浓度定量分析

金刚石NV-色心具有优越的光致发光特性,可实现高灵敏度物理量探测。其中,NV-色心的浓度是影响其宏观领域物理量探测灵敏度的重要因素之一。分析了金刚石在NV-色心制备过程中产生的发光缺陷,研究了不同的电子注入剂量与NV-色心浓度的关系。首先,对金刚石进行电子辐照并高温真空退火,制备了NV-色心;然后,利用拉曼光谱仪测试了金刚石在电子辐照前、电子辐照后及退火后三个阶段中的荧光光谱,分析了金刚石在NV-色心制备过程中的光谱特性;最后,对生成的NV-色心的浓度进行了估算,并探究了不同电子注入剂量对NV-色心浓度的影响规律。结果表明,金刚石经电子注入后生成了524.7,541.1,578和648.1 nm发光中心。其中,HPHT合成金刚石经电子注入后普遍存在524.7 nm中心。电子注入后的金刚石经高温(≥800 ℃)真空(≥10-7 Pa)退火后,空位自由移动,不稳定的缺陷消失,当空位靠近氮原子时被束缚而形成氮空位色心。对于氮含量100 ppm的金刚石,当电子注入产生的空位含量小于120 ppm(2.1×1019 cm-3)时,NV-色心浓度与电子注入生成空位的含量的关系符合Boltzmann分布。该研究为利用氮含量100 ppm的金刚石实现定量NV-色心浓度的制备提供了参考依据,为NV-色心在宏观物理量精密测量的应用奠定了基础。     

金刚石纳米颗粒中氮空位色心的电子自旋研究

通过电子注入的方法制备了含氮空位色心单光子源的金刚石荧光纳米颗粒. 自旋回声测试结果表明, 纳米颗粒中氮空位色心的相干时间T₂很短, 介于0.86 μs至5.6 μs之间. Ramsey干涉条纹测试结果表明, 氮空位色心NV1点的退相干时间T₂^* 最大, 为0.7 μs, 其电子自旋共振谱可分辨的最小线宽为1.05 MHz. 并且NV1点的电子自旋共振谱可分辨氮空位色心本身的¹⁴N核自旋与 氮空位色心电子自旋之间的2.2 MHz超精细相互作用, 这对于在金刚石纳米颗粒中实现核自旋的操控和多个量子比特的门操作具有重要意义. 关键词： 纳米颗粒 氮空位色心 电子自旋     

氧空位对Eu2+, Dy3+掺杂的Ca5MgSi3O12发光及余辉性能的影响

利用高温固相法合成了稀土离子Eu²⁺, Dy³⁺掺杂的Ca₅MgSi₃O₁₂长余辉发光材料. 利用光谱学证明了在材料内部存在与氧空位有关的缺陷发光. 通过对比不同条件下合成样品的发光及余辉性能, 发现氧空位对材料的发光及余辉均起到促进作用. 同时发现氧空位发光可以向发光中心传递能量. 利用热释光曲线系统的分析了氧空位对余辉性能的影响. Ca₅MgSi₃O₁₂:Eu²⁺,Dy³⁺是一种潜在的长余辉发光材料. 关键词： 长余辉 氧空位 能量传递 热释光     

γ-Fe中氢扩散行为的第一性原理研究

不锈钢中氢脆问题一直是研究者们关注热点,然而至今为止,对于钢中合金元素及空位与H原子之间的作用机理依然不清晰.采用第一性原理方法研究了H原子在不同体系下γ-Fe(Fe₈H、Fe₇Cr/MoH、Fe₇H)的扩散激活能、扩散系数以及扩散过渡态,对比了H原子在不同体系γ-Fe中的扩散难易程度,并从电子结构层次解释其相互作用.研究结果表明,空位的存在会改变H原子在γ-Fe中的扩散路径.在含空位的晶胞中H原子稳定存在于空位附近的近四面体间隙中,并沿空位附近的四面体间隙或八面体到四面体间隙路径扩散. γ-Fe中空位对H原子的影响是局域性的,一方面是捕获H原子的陷阱;另一方面降低了H原子的扩散激活能,促进H原子的扩散.而Cr/Mo的掺杂会降低空位对H原子的束缚,也会抑制H原子的扩散.     

KH2PO4中电子或空穴辅助下的氢缺陷反应

研究了非线性光学晶体材料KH2 PO4(KDP)中不同带电状态的H缺陷的稳定性及其反应 .从而以清晰的物理图像描绘了KDP材料暴露在强紫外线或X射线下性能下降的原因 .研究发现 ,对于H间隙原子 ,当增加一个电子时 ,H间隙原子与主H原子发生作用 ,形成间隙H2 分子并产生一个H空位 ,而增加一个空穴时H间隙原子与临近的主O原子形成氢氧键 ,这两种带电态的H间隙原子均切断KDP材料中形成网络的氢键 ;对于H空位 ,增加一个空穴将导致形成“过氧化氢”桥结构 .这些结果在原子层次上清楚地解释了实验所建议的缺陷反应机制     

Dependence of nitrogen vacancy color centers on nitrogen concentration in synthetic diamond

Crystallization of diamond with different nitrogen concentrations was carried out with a FeNiCo-C system at pressure of 6.5 GPa. As the nitrogen concentration in diamond increased, the color of the synthesized diamond crystals changed from colorless to yellow and finally to atrovirens (a dark green). All the Raman peaks for the obtained crystals were located at about 1330 cm^-1 and contained only the sp³ hybrid diamond phase. Based on Fourier transform infrared results, the nitrogen concentration of the colorless diamond was < 1 ppm and absorption peaks corresponding to nitrogen impurities were not detected. However, the C-center nitrogen concentration of the atrovirens diamond reached 1030 ppm and the value of A-center nitrogen was approximately 180 ppm with a characteristic absorption peak at 1282 cm^-1. Furthermore, neither the NV⁰ nor the NV^- optical color center existed in diamond crystal with nitrogen impurities of less than 1 ppm by photoluminescence measurement. However, Ni-related centers located at 695 nm and 793.6 nm were observed in colorless diamond. The NE8 color center at 793.6 nm has more potential for application than the common NV centers. NV⁰ and NV^- optical color centers coexist in diamond without any additives in the synthesis system. Importantly, only the NV^- color center was noticed in diamond with a higher nitrogen concentration, which maximized optimization of the NV^-/NV⁰ ratio in the diamond structure. This study has provided a new way to prepare diamond containing only NV^- optical color centers.     

Oscillator strength calculations in color centers of diamond and the role of spin

A generalized Hubbard model based on a molecular approach is used to calculate many electron wavefunctions of diamond vacancies. We have calculated the oscillator strength of the dipole transition rates from the ground states of the neutral and negatively charged vacancies. The ratio of the oscillator strengths is in very good quantitative agreement with the reported optical spectroscopic data. Electronic configurations in the ground and dipole allowed excited states are presented. With the proposed picture, the much larger oscillator strength of the negatively charged vacancy with respect to other experimentally investigated color centers N-V, H3, N3 and H4 is explained.Received: 9 March 2004, Published online: 23 July 2004PACS: 61.72.Bb Theories and models of crystal defects - 61.72.Ji Point defects (vacancies, interstitials, color centers, etc.) and defect clusters - 71.55.-i Impurity and defect levels     

Picosecond-laser-induced structural modifications in the bulk of single-crystal diamond

Arrays of through laser-graphitized microstructures have been fabricated in type IIa single-crystal 1.2-mm-thick diamond plates by multipulse laser irradiation with 10-ps pulses at λ=532 nm wavelength. Raman and photoluminescence (PL) spectroscopy studies of the bulk microstructures have evidenced the diamond transformation to amorphous carbon and graphitic phases and the formation of radiation defects pronounced in the PL spectra as the self-interstitial related center, the 3H center, at 504 nm. It is found that the ultrafast-laser-induced structural modifications in the bulk of single-crystal diamond plates occur along {111} planes, known as the planes of the lowest cleavage energy and strength in diamond.     

Proposed spin amplification for magnetic sensors employing crystal defects

Recently there have been several theoretical and experimental studies of the prospects for magnetic field sensors based on crystal defects, especially nitrogen vacancy (NV) centers in diamond. Such systems could potentially be incorporated into an atomic force microscopy-like apparatus in order to map the magnetic properties of a surface at the single spin level. In this Letter we propose an augmented sensor consisting of an NV center for readout and an "amplifier" spin system that directly senses the local magnetic field. Our calculations show that this hybrid structure has the potential to detect magnetic moments with a sensitivity and spatial resolution far beyond that of a simple NV center, and indeed this may be the physical limit for sensors of this class.     

A quantum computer based on NV centers in diamond: Optically detected nutations of single electron and nuclear spins

In an effort to realize a two-bit processor for a quantum computer on the basis of single nitrogen-vacancy defect centers (NV centers) in diamond, the optically detected nutations of the electron spin of a single NV center in the ground state and of the nuclear spin of a ¹³C atom located at a diamond lattice site nearest to the NV center are studied. The photodynamics of NV and NV + ¹³C centers under different temperatures and optical excitation conditions is discussed. A seven-level model of a center excited by radiation from an Ar⁺ laser at room temperature is proposed. On the basis of this model, the experimental spectra of optically detected electron paramagnetic and electron-nuclear double resonances of single NV and NV + ¹³C centers in diamond nanocrystals, as well as experimental data on the optically detected nutations of the electron and nuclear spins of these centers caused by the actions of pulsed microwave and radiofrequency fields, respectively, are interpreted.     

Quantum-chemical modeling of structural,electronic, and spin characteristics of NV centers in nanostructured diamond: Surface effect

The effect of the surface of diamond on atomic, electronic, and spin properties of diamond nanocrystals containing single nitrogen-vacancy defects ([NV]⁻ centers) is studied. The surface was modeled with clusters C₃₃H₃₀[NV]⁻, C₆₆H₇₂[NV]⁻, which were constructed based on bulk clusters C₃₃H₃₆[NV]⁻ and C₆₉H₈₄[NV]⁻, respectively. In all cases, clusters in the triplet state S = 1 are considered with the cluster charge being −1. The geometric structure of clusters is optimized using the principle of minimization of the total energy of the system; then, the electronic and spin characteristics of clusters are calculated by the density functional theory. The isotropic and anisotropic hyperfine interaction constants of the electron spin of the NV center with the nuclear spin of the nitrogen atom and ¹³C atoms located at different sites in the cluster are calculated. It is found that, in contrast to bulk clusters with [NV]-centers in which the spin density is mainly localized at the three carbon atoms that are the nearest neighbors of the vacancy of the center, upon arrangement of the NV center in the immediate proximity to the surface, the spin density is redistributed such that it is mainly localized at the three carbon atoms that are the nearest neighbors of the nitrogen atom of the center and at C atoms that form the first atomic layer of the (111) surface of the nanocrystal.