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采用传统固相反应法制备了CaCu3Ti4O12陶瓷.XRD证实其CaCu3Ti4O12相;SEM观察到明显的晶粒晶界结构,晶界区亦由小晶粒构成;结合EDS结果,判定晶界区小晶粒为CuO.在较宽的温度范围内,CaCu3Ti4O12陶瓷的介电常数保持在105左右;当频率为103 Hz温度小于150 K时,介电常数迅速下降.在173—373 K温度范围内,通过其I-V特性,得到CaCu3Ti4O12陶瓷直流电导随温度的变化:直流电导与温度的关系可分为三部分,对应的活化能分别为0.681 eV,0.155 eV和0.009 eV,这与CuO陶瓷直流电导活化能一致.可以认为晶界区的CuO小晶粒在CaCu3Ti4O12陶瓷的直流电导中占主导,这为解释CaCu3Ti4O12陶瓷反常的介电性能提供了新的思路.
关键词:
3Ti4O12')" href="#">CaCu3Ti4O12
微观结构
直流电导
介电特性 相似文献
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CaCu3Ti4O12介电损耗较大且损耗机理尚不明确, 因此限制了其应用.本文采用固相法和共沉淀法合成CaCu3Ti4O12陶瓷, 利用宽带介电温谱研究在交流小信号作用下, 双Schottky势垒耗尽层边缘深陷阱的电子松弛过程、 载流子松弛过程以及CaCu3Ti4O12陶瓷的介电损耗性能. 研究发现, 在低频下以跳跃电导和直流电导的响应为主, 而高频下主要为深陷阱能级的松弛过程所致, 特别是活化能为0.12 eV的深陷阱浓度, 这是决定CaCu3Ti4O12陶瓷高频区介电损耗的重要因素.降低直流电导, 有利于降低低频区介电损耗; 而高频区介电损耗的降低, 需要降低深陷阱浓度或增大晶粒尺寸. 共沉淀法制备的CaCu3Ti4O12陶瓷, 有效降低直流电导及控制深陷阱浓度, 介电损耗降低明显.
关键词:
3Ti4O12陶瓷')" href="#">CaCu3Ti4O12陶瓷
介电损耗
松弛过程
Schottky势垒 相似文献
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采用了传统的固相烧结工艺,制备了不同Zr和Hf掺杂量的SrBi4Ti4-xZrxO15(x=000,003, 006,010,020)和SrBi4Ti4-xHfxO15(x=000,0005, 0015,0030,0060)的陶瓷
关键词:
4Ti4-xZrxO15')" href="#">SrBi4Ti4-xZrxO15
4Ti4-xHfxO15')" href="#">SrBi4Ti4-xHfxO15
铁电性能
介电性能 相似文献
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本文采用Novocontrol宽频介电谱仪在-100 ℃–100 ℃温 度范围内、0.1 Hz–10 MHz频率范围内测量了表面层打磨前 后CaCu3Ti4O12陶瓷的介电特性, 分析了CaCu3Ti4O12陶瓷的介电弛豫机理. 首先, 基于对宏观“壳-心”结构的定量分析, 排除了巨介电常数起源于表面层效应的可能性; 其次, 基于经典Maxwell-Wagner夹层极化及其活化能物理本质的分析, 排除了巨介电常数起源于经典Maxwell-Wagner极化的可能性; 最后, 依据晶界Schottky势垒与本征点缺陷的本质联系, 提出了巨介电常数起源于Schottky势垒边界陷阱电子弛豫的新机理. 陷阱电子弛豫机理反映了CaCu3Ti4O12陶瓷本征点缺陷、 电导、介电常数之间的本质关系.
关键词:
3Ti4O12')" href="#">CaCu3Ti4O12
介电弛豫
Schottky势垒
点缺陷 相似文献
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在电场为3.5 kV/cm的条件下, 对CaCu3Ti4O12陶瓷进行了60 h的直流老化, 研究了老化过程对CaCu3Ti4O12陶瓷介电性能和电气特性的影响. J-E特性测试结果表明, 直流老化导致CaCu3Ti4O12陶瓷击穿场强、非线性系数和势垒高度明显降低. 介电性能测试结果表明, 低频介电常数和介电损耗明显增大, 并且介电损耗随频率的变化遵从Debye弛豫理论, 可分解为直流电导损耗和弛豫损耗, 直流老化主要导致了电导损耗的增加. 在低温233 K, 介电损耗谱中出现两个弛豫峰, 其活化能分别为0.10, 0.50 eV, 认为对应着晶粒和畴界的弛豫过程, 且不随直流老化而变化. 通过电模量谱对CaCu3Ti4O12陶瓷的弛豫过程进行了表征, 发现直流老化导致的界面空间电荷在外施交变电场的作用下符合Maxwell-Wagner极化效应, 并在低频区形成新的弛豫峰. 在高温323-473 K的阻抗谱中, 晶界弛豫峰在直流老化后明显向高频移动, 其对应的活化能从1.23 eV 下降到0.72 eV, 晶界阻抗值下降了约两个数量级. 最后, 建立了CaCu3Ti4O12陶瓷的阻容电路模型, 分析了介电弛豫过程与电性能之间的关联. 相似文献
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由于CaCu3Ti4O12巨介电常数陶瓷的低频区直流电导较大, 本文采用模量 M"-f频谱表征与分析了低频和高频的两个松弛极化过程. 研究认为, 这两个特征峰属于晶界区Schottky 势垒耗尽层边缘深陷阱的电子松弛过程, 其中高频松弛峰起源于晶粒本征缺陷的电子松弛过程, 而低频松弛峰则为与氧空位有关的松弛极化过程. 对于CaCu3Ti4O12这类低频下具有高直流电导的陶瓷材料, 采用模量频谱能更有效地分析研究其损耗极化机理.
关键词:
3Ti4O12陶瓷')" href="#">CaCu3Ti4O12陶瓷
模量
松弛过程
电导 相似文献
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K. Chen 《Solid State Communications》2007,141(8):440-444
Single phase ceramics CaCu3Ti4.0O12 and CaCu3Ti3.9O12 have been prepared using the traditional solid-state reaction method. Compared with the stoichiometric ceramics CaCu3Ti4.0O12, Ti-deficient ceramics CaCu3Ti3.9O12 have the larger lattice parameter, the higher force constant, and smaller dielectric constant and the lower dissipation factor, although their fundamental characters of dielectric response are similar. Their characteristic relaxation frequencies are not well fitted with the Arrhenius Law but a tentatively supposed relation. With the Cole-Cole Law, the fitted broadened factors of dissipation peaks are 0.5433 and 0.8651 for CaCu3Ti3.9O12 and CaCu3Ti4.0O12, respectively. All facts mentioned above imply that mutually correlated motion of Ti ions or defects may be expected to be responsible for the giant dielectric constant and high dissipation factor of CaCu3Ti4.0O12. 相似文献
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A 10 mm thickness columned CaCu3Ti4O12 ceramic was fabricated by the conventional solid-state reaction method and the dielectric properties of different parts in ceramic had been investigated. For the sample close to the surface, only one Debye-type relaxation around 107 Hz was observed at room temperature. However, for the sample close to the core, another relaxation peak was observed at about 104 Hz. The results were explained in terms of the equivalent circuit model by showing in the impedance spectroscopy. Moreover, it was introduced that the low-frequency dielectric relaxation is associated with the electrode-sample contact effect based on varying sample thickness and an annealing treatment in the nitrogen atmospheres. 相似文献
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CaCu3Ti4O12 ceramics were prepared at the sintering temperatures ranged from 1025 to 1125 °C, and the dielectric characteristics were evaluated together with the microstructures. The giant dielectric constant with the maximum of 53,120 was obtained in CaCu3Ti4O12 ceramics at room temperature and 10 kHz, and strong processing and microstructure dependence of dielectric characteristics of the present ceramics was determined. The precipitation of the dispersed Cu-rich secondary phases of CuO and/or Cu2O and their network structure provided the extrinsic origins of the enhanced giant dielectric response, and the present findings would offer the greater potential for enhancing the giant dielectric constant and controlling the dielectric loss in CaCu3Ti4O12 ceramics by optimizing the microstructures. 相似文献
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Effects of Mg-substitution on the giant dielectric response in CaCu3Ti4O12 ceramics were investigated and discussed. A significantly enhanced giant dielectric response was obtained in Ca(Cu1?xMgx)3Ti4O12 ceramics, and the dielectric constant step increased with increasing Mg-substitution content. The results of X-ray photoelectron analysis confirmed the obvious increase of Ti3+/Ti4+ ratio, and the enhanced giant dielectric response should originate from the corresponding modification of the mixed-valent structure. The present results have great scientific significance in deepening the understanding on the origin of giant dielectric response and modulating the giant dielectric constant step in CaCu3Ti4O12. 相似文献
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本文研究了在真空、空气和氧气中烧结制备的三种 CaCu3Ti4O12陶瓷材料的介电特性. 交流阻抗测量结果表明在10—300 K温度范围, 三种样品的介电温谱中均出现三个平台, 其电阻实部和电容虚部在相应温度出现损耗峰, 真空条件烧结的样品具有较高的介电平台和较明显的电阻实部与电容虚部峰值, 表明氧含量和氧空位对CaCu3Ti4O12的介电性质具有重要影响, 介电温谱出现的三个平台分别源于晶粒、晶界及氧空位陷阱.温谱分析表明晶粒的激活能与烧结气氛有较大关系,氧空位引起的电子短程跳跃及跳跃产生的极化子是晶粒电导和电容的主要起源.氧空位陷阱的激活能基本与烧结气氛无关,约为0.46 eV. 氧空位对载流子的陷阱作用是CaCu3Ti4O12 低频高介电常数的重要起源. 相似文献
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B. Shri Prakash 《Journal of Physics and Chemistry of Solids》2007,68(4):490-502
Detailed investigations into the dielectric dispersion phenomenon in the giant dielectric constant material CaCu3Ti4O12 (CCTO) around room temperature revealed the existence of two successive dielectric relaxations. In the temperature domain, a new dielectric relaxation was clearly observed around 250 K, in addition to the well-investigated dielectric relaxation close to 100 K. The effect of sintering and doping (La3+) on the strength of these dielectric relaxations were studied in detail. The sintering temperature as well as its duration was found to have tremendous influence on the dielectric relaxation that was encountered around 250 K. This Maxwell-Wagner (M-W) type of relaxation was found to be originating from the surface layer containing the Cu-rich phase, which was ascribed to the difference in the oxygen content between the surface and the interior of the sample. Interestingly, this particular additional relaxation was not observed in La2/3Cu3Ti4O12, a low dielectric constant member of the CCTO family, in which the segregation of Cu-rich phase on the surface was absent. Indeed the correlation between the new relaxation and the presence of Cu-rich phase in CCTO ceramics was further corroborated by the absence of the same after removing the top and bottom layers. 相似文献
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Although CdCu3Ti4O12 is isostructural to CaCu3Ti4O12, the room temperature low-frequency dielectric constant of the former compound was reported to be ∼400, only 1/25 of that of the latter material [M.A. Subramanian, et al., J. Solid State Chem. 151 (2000) 323]. In this communication, we report that the dielectric constant of CdCu3Ti4O12 can be remarkably increased by elevating the sintering temperature. The room temperature dielectric constant at 100 kHz achieves 9000, almost as much as that of CaCu3Ti4O12, for the sample sintered at 1283 K. The appearance of giant dielectric constant in CdCu3Ti4O12 is explained in terms of internal barrier layer capacitance (IBLC) effect with the subgrain boundary as the barrier. Our result supplies an approach in searching for new giant-dielectric-constant materials in the CaCu3Ti4O12 family. 相似文献