微腔中单量子点的激光输出特性研究

研究一个四能级量子点耦合到单模光学腔中的量子系统,利用系统的主方程作数值模拟计算微腔中单量子点的激光输出强度随非相干泵浦的变化关系.结果显示量子点在泵浦作用下激光的输出有一个阈值;且量子点和腔模耦合强度增强时,产生激光的阈值明显减小,输出激光的峰值却增大.当泵浦作用继续增强到一定程度,因激光能级间的相干性被过强的非相干泵浦所破坏,单量子点激光输出变为零----出现了淬灭现象.     

类W态原子与三耦合腔系统作用中的量子失协

研究了三个全同二能级原子与三耦合腔相互作用物理模型中两原子间的量子失协.腔与腔之间通过光纤耦合,考虑原子与腔模之间的共振作用,采用几何量子失协来度量两原子间的量子关联,数值计算了系统中两原子间的几何量子失协,给出了其演化曲线.讨论了光纤模与腔模间的耦合强度变化对几何量子失协的影响.结果表明:随光纤模与腔模间的耦合强度增大,两原子间的几何量子失协增大,即两原子间量子关联增强.     

单量子点微腔激光器的研究

研究一个三能级量子点耦合到单模光学腔组成的系统,该单量子点激光器的泵浦阈值较小,激光能较快地达到稳定输出,当量子点和腔模耦合强度增强时,其泵浦阈值更小,激光达到稳定输出的速度更快。     

双光子过程原子与耦合腔相互作用中的量子失协

研究原子与耦合腔相互作用系统,考虑每个腔囚禁一个二能级原子,原子与腔场发生共振相互作用,腔场也相互耦合的情况;采用量子失协几何度量方法—几何量子失协,来度量两个子系统间的量子失协.利用数值计算方法给出了量子失协的演化曲线,讨论了腔场间耦合系数变化对量子失协的影响.研究结果表明:随腔场间耦合系数增大,两原子间量子失协增大,而原子与腔场间或两腔场间的量子失协却减小.     

量子点腔非谐振耦合系统纯退相干的特性及应用

采用非相干泵浦、受激辐射和纯退相干的量子主方程研究了量子点腔耦合系统,得出腔与量子点发射光谱解析解.理论分析显示,在非谐振耦合系统中纯退相干能使腔发射谱产生明显的移位效应,从而可以解释“非谐振耦合腔有效发射”效应.为了进一步研究纯退相干在量子点腔耦合系统上的应用,引入了系统有效耦合率和单光子源效率,并通过比较有效耦合率与腔耗散定义出好腔与坏腔机制.选取两组依据实验数据作为参量,在共振与失谐时研究了纯退相干对系统有效耦合率和单光子源效率的影响.结果表明:纯退相干可提高失谐系统有效耦合率与单光子源效率,从而可能使坏腔转变为好腔|两组参量中有较大耦合效率一组在一定范围内满足好腔机制,其单光子源效率明显优于另一组.在非谐振耦合系统比较了好腔机制与坏腔机制的激光,好腔机制是实现单量子点激光的必要条件|由于非谐振耦合系统Fano因子无最大值出现,从而该系统可能无激光阈值.     

量子点腔非谐振耦合系统纯退相干的特性及应用

采用非相干泵浦、受激辐射和纯退相干的量子主方程研究了量子点腔耦合系统,得出腔与量子点发射光谱解析解.理论分析显示,在非谐振耦合系统中纯退相干能使腔发射谱产生明显的移位效应,从而可以解释"非谐振耦合腔有效发射"效应.为了进一步研究纯退相干在量子点腔耦合系统上的应用,引入了系统有效耦合率和单光子源效率,并通过比较有效耦合率...     

HD~+分子的强场光解离动力学及其量子调控的理论研究

利用精确求解原子核与电子耦合运动的三维含时量子波包法,理论研究了HD~+分子在强激光场中的光解离动力学,并给出了量子调控HD~+分子光解离通道的理论方案.通过分析HD~+分子在不同的初始振动态和激光场强度下的光解离动力学过程及其解离核动能谱,得出了HD~+分子的光解离机理及其随激光场强度的变化规律.研究结果表明,利用激光场的强度可以实现HD~+分子光解离通道的量子调控.当激光场强度I_1=4.0×10~(13) W/cm~2时,HD~+分子的光解离主要是通过净单光子吸收解离和净双光子吸收解离;当激光场强度增大到I_2=2.0×10~(14) W/cm~2时,直接双光子吸收解离取代了净单光子吸收解离,净双光子吸收解离的比重也下降了.     

原子与耦合腔相互作用系统中的量子失协

本文研究由两个全同的二能级原子和耦合腔构成的系统,利用Dakic等提出的几何量子失协的度量方法,采用数值计算方法计算了系统中两原子间和两腔场间量子失协的演化.讨论了原子间初始纠缠度和腔场间耦合系数变化对几何量子失协演化的影响.研究发现:随腔场间耦合系数的增大,量子失协周期性演化的频率增大;随原子间初始纠缠度的增大,两原子间的关联增强,两腔场间的关联减弱.     

温度对抛物量子点中强耦合磁极化子性质的影响

采用线性组合算符法和LLP变换法,研究了温度对抛物量子点中强耦合磁极化子性质的影响.首次得到了抛物量子点中强耦合磁极化子的基态能量和振动频率随温度的变化规律.结果表明,量子点中强耦合磁极化子的振动频率随温度的升高而减小,随量子点的受限强度、回旋频率和耦合强度的增加而增大.而基态能量随回旋频率、耦合强度和温度变化的规律与磁极化子的状态性质密切相关.磁极化子基态能量和振动频率随量子点的受限强度、回旋频率和耦舍强度的变化情况受温度的显著影响,不过,温度对磁极化子基态能量和振动频率的影响只有在较高温度(O<γ<0.5)时才显现.     

声子色散对量子点中弱耦合磁极化子性质的影响(英文)

利用线性组合算符和幺正变换的方法,研究声子色散对磁场中抛物量子点弱耦合磁极化子性质的影响.计及LO声子色散,在抛物近似下导出了基态能量与量子点有效受限长度、声子色散系数、磁场强度以及耦合强度之间的关系.我们可以得到在弱耦合情况下抛物量子点中磁极化子的基态能量E0随量子点有效受限长度l0、电子声子耦合常数α和声子色散系数γ的增大而减小,随磁场回旋频率ωc增大而增大.自陷能Eotr随声子色散系数γ增大而增大.     

Another model for a multiexcitonic quantum dot in an optical microcavity

Very recently, a multiexcitonic quantum dot in an optical microcavity have been theoretically studied [Herbert Vincka, Boris A. Rodriguez, and Augusto Gonzalez, Physica E, 2006, 35: 99–102]. However, due to the inevitable damping losses through the microcavity, in this work, we will present a more precise and sound model in the Lindblad form master equation to investigate the photonic properties of a single quantum dot (QD) in an optical microcavity system, in which the QD may confine the multiexcitons and be in resonant interaction with a single photonic mode of an optical microcavity. The excitation energies, and the properties of the emission photon from the QD microcavity are computed as functions of the exciton-photon coupling strength, detuning, and pump rate. We further compare our results with their results, and find that the calculated intensity of the emitted photon and the spectra crucially depend on the exciton-photon coupling strength g, the photon detuning, and the number of excitons in the QD. Finally, we will give a physical mechanism of the dressed-state picture for the strong coupling between the single mode of an optical microcavity and the QD emitters to explain the details of the emission photon spectra. Our study establishes useful guidelines for the experimental study of such multiexcitonic quantum dot in an optical microcavity system.      

Single-mode spontaneous emission from a single quantum dot in a three-dimensional microcavity

The spontaneous emission from an isolated semiconductor quantum dot state has been coupled with high efficiency to a single, polarization-degenerate cavity mode. The InAs quantum dot is epitaxially formed and embedded in a planar epitaxial microcavity, which is processed into a post of submicron diameter. The single quantum dot spontaneous emission lifetime is reduced from the noncavity value of 1.3 ns to 280 ps, resulting in a single-mode spontaneous emission coupling efficiency of 78%.     

Influence of a single quantum dot state on the characteristics of a microdisk laser

We report a quantum dot microcavity laser with a cw sub-microW lasing threshold, where a significant reduction of the lasing threshold is observed when a single quantum dot (QD) state is aligned with a cavity mode. The quality factor exceeds 15,000 before the system lases. When no QD states are resonant, below threshold the cavity mode initially degrades with increasing pump power, after which saturation occurs and then the cavity mode recovers. We associate the initial cavity mode spoiling with QD state broadening that occurs with increasing pump power.     

Controlling spontaneous emission and threshold-less laser oscillation with optical microcavities

We describe the alteration of spontaneous emission of materials in optical microcavities having dimensions on the order of the emitted wavelength. Particular attention is paid to one-dimensional optical confinement structures with pairs of planar reflectors (planar microcavities). The presence of the cavity causes great modifications in the emission spectrum and spatial emission intensity distribution accompanied by changes in the spontaneous emission lifetime. Experimental results are shown for planar microcavities containing GaAs quantum wells or organic dye-embedded Langmuir-Brodgett films as light emitting layers. Also discussed are the laser oscillation properties of microcavities. A remarkable increase in the spontaneous emission coupling into the laser oscillation mode is expected in microcavity lasers. A rate equation analysis shows that increasing the coupling of spontaneous emission into the cavity mode causes the disappearance of the lasing threshold in the input-output curve. Experimentally verification is presented using planar optical microcavities confining an organic dye solution. The coupling ratio of spontaneous emission into a laser mode increases to be as large as 0.2 for a cavity having a half wavelength distance between a pair of mirrors. At this point, the threshold becomes quite fuzzy. Differences between the spontaneous emission dominant regime and the stimulated emission dominant regime are examined with emission spectra and emission lifetime analyses.     

Photon antibunching from a single quantum-dot-microcavity system in the strong coupling regime

We observe antibunching in the photons emitted from a strongly coupled single quantum dot and pillar microcavity in resonance. When the quantum dot was spectrally detuned from the cavity mode, the cavity emission remained antibunched, and also anticorrelated from the quantum dot emission. Resonant pumping of the selected quantum dot via an excited state enabled these observations by eliminating the background emitters that are usually coupled to the cavity. This device demonstrates an on-demand single-photon source operating in the strong coupling regime, with a Purcell factor of 61+/-7 and quantum efficiency of 97%.     

Isolated single quantum dot emitters in all-epitaxial microcavities

Data are presented on a fabrication approach that places an isolated single quantum dot at the center of a semiconductor microcavity. The microcavity is based on an all-epitaxial mesa-confined design that is mechanically robust and provides the thermal dissipation needed for a single photon source device technology. Microphotoluminescence is used to reveal single quantum dot emission with the essential optical properties of single quantum emitters.     

Triggered single photons and entangled photons from a quantum dot microcavity

Current quantum cryptography systems are limited by the attenuated coherent pulses they use as light sources: a security loophole is opened up by the possibility of multiple-photon pulses. By replacing the source with a single-photon emitter, transmission rates of secure information can be improved. We have investigated the use of single self-assembled InAs/GaAs quantum dots as such single-photon sources, and have seen a tenfold reduction in the multi-photon probability as compared to Poissonian pulses. An extension of our experiment should also allow for the generation of triggered, polarization-entangled photon pairs. The utility of these light sources is currently limited by the low efficiency with which photons are collected. However, by fabricating an optical microcavity containing a single quantum dot, the spontaneous emission rate into a single mode can be enhanced. Using this method, we have seen 78% coupling of single-dot radiation into a single cavity resonance. The enhanced spontaneous decay should also allow for higher photon pulse rates, up to about 3 GHz. Received 8 July 2001 and Received in final form 25 August 2001     

Efficient source of single photons: a single quantum dot in a micropost microcavity

We have demonstrated efficient production of triggered single photons by coupling a single semiconductor quantum dot to a three-dimensionally confined optical mode in a micropost microcavity. The efficiency of emitting single photons into a single-mode traveling wave is approximately 38%, which is nearly 2 orders of magnitude higher than for a quantum dot in bulk semiconductor material. At the same time, the probability of having more than one photon in a given pulse is reduced by a factor of 7 as compared to light with Poissonian photon statistics.