共查询到19条相似文献,搜索用时 265 毫秒
1.
根据有机半导体中的电流自旋极化注入和输运实验现象,理论上研究了铁磁/有机半导体/铁磁系统的电流自旋极化性质.考虑到有机半导体的具体特性,从自旋扩散理论和欧姆定律出发,得到了系统的电流自旋极化率.假设自旋极化子和不带自旋的双极化子为有机半导体中的载流子.通过计算发现,极化子为实现有机半导体中电流极化注入和输运的有效自旋载流子,即使它只占总载流子很少一部分.还进一步研究了自旋相关界面电阻和电导率匹配以及有机半导体长度等因素对系统电流自旋极化的影响.
关键词:
自旋电子学
自旋注入
有机半导体
极化子 相似文献
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利用漂移扩散理论研究了磁性pn结中自旋的输运特性.探讨了外加电压、平衡自旋极化率、外加自旋注入和自旋寿命对磁性pn结电流密度和电阻的影响,讨论了磁性pn结自旋伏特效应与pn结宽度的关系.发现平衡自旋极化率使得不同自旋方向电子具有不同的势垒高度从而能有效调制电流;而外加自旋注入则为磁性pn结提供了非平衡自旋极化电子从而达到对电流的调制作用,同时发现自旋伏特电流随准中性p区宽度减小而增大.
关键词:
磁性pn结
自旋极化率
自旋寿命
自旋伏特效应 相似文献
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基于紧束缚模型和格林函数方法,研究了有机磁体晶格扰动和侧基自旋取向扰动对金属/有机磁体/金属三明治结构有机自旋器件自旋极化输运特性的影响.计算结果表明:晶格扰动的存在降低了器件的起始偏压,减小了导通电流,并使得电流-电压曲线的量子台阶效应不再显著,扰动不太强时电流仍呈现较高的自旋极化率;而侧基自旋取向扰动减小了体系的自旋劈裂,增加了器件的起始偏压,低偏压下随着扰动的增强器件电流及其自旋极化率明显降低.进一步模拟了温度对器件自旋极化输运的影响.
关键词:
有机自旋电子学
有机磁体
自旋极化输运
自旋过滤 相似文献
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从自旋扩散方程和欧姆定律出发研究了铁磁层到有机半导体的自旋注入,得到了系统的电流自旋极化率。有机半导体中的载流子为自旋极化子和不带自旋的双极化子,极化子比率在有机半导体内随输运距离变化。通过计算发现匹配的铁磁和有机半导体电导率有利于自旋注入;通过调节界面电阻自旋相关性,电流自旋极化率可获得很大程度提高;极化子比率衰减速率对有机半导体电流自旋极化率具有非常重要的影响。 相似文献
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电子的隧穿时间是描述量子器件动态工作范围的重要指标. 本文考虑k3 Dresselhaus 自旋轨道耦合效应对系统哈密顿量的修正, 结合转移矩阵方法和龙格-库塔法来解含时薛定谔方程, 进而讨论了电子在非磁半导体对称双势垒结构中的透射系数及隧穿寿命等问题. 研究结果发现:由于k3 Dresselhaus 自旋轨道耦合效应使自旋简并消除, 并在时间域内得到了表达, 导致自旋向上和自旋向下电子的透射峰发生了自旋劈裂; 不同自旋取向的电子构建时间和隧穿寿命不同, 这是导致自旋极化的原因之一; 电子的自旋极化在时间上趋于稳定.
关键词:
自旋极化输运
透射系数
隧穿寿命
自旋极化率 相似文献
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A. Phirouznia F. Ghamari 《The European Physical Journal B - Condensed Matter and Complex Systems》2010,74(3):357-362
Non-equilibrium spin accumulation in two-dimensional domain wall (DW) in the presence of external electric field and Rashba
type spin-orbit coupling within the Boltzmann semi-classical
model is investigated. Transport and relaxation of spin polarized current in the DW is governed by spin-flip rates which are
determined by the Rashba interaction and magnetic impurities. Numerical results show that at low impurity densities and nonadiabatic
transport regimes, the Rashba interaction significantly enhances spin polarization of conduction electrons inside the DW. 相似文献
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Effect of Carrier Differences on Spin Polarized Injection into Organic and Inorganic Semiconductors 下载免费PDF全文
Spin polarized injection into organic and inorganic semiconductors are studied theoretically from the spin diffusion theory and Ohm's law, and the emphases are placed on the effect of the carrier differences on the current spin polarization. The mobility and the spin-flip time of carriers in organic and inorganic semiconductors are different. From the calculation, it is found that current spin polarization at a ferromagnetic/organic interface is higher than that at a ferromagnetic/inorganic interface because of different carriers in them. Effects of the conductivity matching, the spin dependent interracial resistances, and the bulk spin polarization of the ferromagnetic layer on the spin polarized injection are also discussed. 相似文献
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G. Sukhodub F. Hohls R.J. Haug D.K. Maude D. Reuter A.D. Wieck 《Physica E: Low-dimensional Systems and Nanostructures》2006,34(1-2):355
In a wide range of magnetic fields nonlinear transport between spin polarized edge channels is studied. The observed hysteresis of the I–V characteristic is attributed to the dynamic nuclear spin polarization due to the electronic spin-flip processes. We find extremely long nuclear spin relaxation times in the regime where the hyperfine interaction with electrons is switched off. 相似文献
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The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic(FM/OSC/FM) system 下载免费PDF全文
From experimental results of spin polarized injection and transport in organic semiconductors(OSCs),we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field in a ferromagnetic/organic semiconductor/ferromagnetic(FM/OSC/FM) sandwich structure according to the spin drift-diffusion theory and Ohm’s law.From the calculations,it is found that the interfacial current spin polarization is enhanced by several orders of magnitude through tuning the magnetic and electric fields by taking into account the specific characteristics of OSC.Furthermore,the effects of the electric and magnetic fields on the magnetoresistance are also discussed in the sandwich structure. 相似文献
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Saha D Siddiqui L Bhattacharya P Datta S Basu D Holub M 《Physical review letters》2008,100(19):196603
The spin dynamics of dilute paramagnetic impurities embedded in a semiconductor GaAs channel of a conventional lateral spin valve has been investigated. It is observed that the electron spin of paramagnetic Mn atoms can be polarized electrically when driven by a spin valve in the antiparallel configuration. The transient current through the MnAs/GaAs/MnAs spin valve bears the signature of the underlying spin dynamics driven by the exchange interaction between the conduction band electrons in GaAs and the localized Mn electron spins. The time constant for this interaction is observed to be dependent on temperature and is estimated to be 80 ns at 15 K. 相似文献
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Markus Wohlgenannt 《固体物理学:研究快报》2012,6(6):229-242
We review recent work in the field of organic spintronics, focusing on our own contributions to this field. There are two principle magnetoresistance effects that occur in organic devices. (i) Organic magnetoresistance (OMAR), which occurs in nonmagnetic organic semiconductor devices. For example, in devices made from the prototypical small molecule Alq3 OMAR reaches values of 10% or more at room temperature. (ii) Organic spin‐valve effects that occur in devices that employ ferromagnetic electrodes for spin‐polarized current injection and detection. We undertake an analysis of these two types of magnetoresistance with the goal of identifying the dominant spin‐scattering mechanism. Analysis of OMAR reveals that hyperfine coupling is the dominant spin‐coupling mechanism. Spin–orbit coupling, on the other hand, is important only in organic semiconductor materials containing heavy atoms. We explore the reasons why spin–orbit coupling is relatively unimportant in hydrocarbon materials. Next, we present a theory for spin diffusion in disordered organic semiconductors based on hyperfine coupling, taking into account a combination of incoherent carrier hopping and coherent spin precession in the random hyperfine magnetic fields. We compare our findings with experimental values for the spin‐diffusion length. Finally, we demonstrate a criterion that allows the determination whether the organic spin‐valves operate in the tunneling or injection regimes. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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以单个磁性中心的NiO以及由Co和Ni等元素构成的双磁性中心的纳米结构为例,总结了近年所做的主要工作.为了在理论上实现磁性纳米结构中的超快自旋翻转和转移,提出了一种称为Λ进程(Λ process)的超快自旋转换机理.在实际计算中,首先采用量子化学第一性原理计算得到磁性纳米结构中精确的隙间d电子态,然后考虑外加磁场和自旋轨道耦合分析磁性原子中的自旋局域化程度,最后引入激光脉冲项,研究在其作用下材料的自旋态经由Λ进程实现转换的时间历程.研究结果表明自旋翻转和转移可以在线偏振光的作用下在亚皮秒的时间尺度内完成.
关键词:
超快自旋动力学
第一性原理计算
Λ进程
磁性纳米结构 相似文献
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通过采用转移矩阵方法求解自旋电子隧穿过程,理论研究了半导体超晶格系统中电子自旋输运的磁电调控行为.结果表明:仅对超晶格系统施以磁调制,隧穿系数将出现自旋分裂,随磁场增强,电导自旋极化率变大且展宽于费米能区;若选取不变磁场情况,同时施以间隔周期电场调制,超晶格的电子极化率将有更为显著地提高.进一步发现,随电场强度的改变,电子自旋输运行为显然存在两个明显不同区域,下自旋电子将在不同调制区域表现为不同的变化趋势.然而,若对周期磁超晶格施加间隔两周期的电调制,自旋电导输运的临界行为消失,电导极化率在高能区的共振峰
关键词:
半导体超晶格
自旋输运
磁电调控 相似文献
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Spin-polarized injection and transport into ferromagnetic/organic semiconductor structure are studied theoretically in the presence of the external electric field and magnetic induction. Based on the spin-drift-diffusion theory and Ohm's law, we obtain the charge current polarization, which takes into account the special carriers of organic semiconductors. From the calculation, it is found that the current spin polarization is enhanced by several orders of magnitude by tuning the magnetic induction and electric fields. To get an apparent current spin polarization, the effects of spin-depended interfacial resistances and the special carriers in the organic semiconductor, which are polarons and bipolarons, are also discussed. 相似文献