Mo纳米薄膜热力学性质的分子动力学模拟

采用改进嵌入原子法(MAEAM),通过经典的分子动力学(MD)模拟计算了高熔点过渡金属体心立方(bcc) Mo块体Gibbs自由能和表面能. 对于纳米薄膜的热力学数据,比如Gibbs自由能等,可以看成是薄膜内部原子和表面原子两部分数据之和,然后根据薄膜的体表原子之比就可以直接计算出总的自由能,并由此可以得到热力学性质与薄膜尺寸及温度的定量关系式. 分别计算了bcc Mo块体及其纳米尺寸薄膜的自由能和热容,结果表明,Mo纳米薄膜的热力学性质具有尺寸效应,并且在薄膜尺寸小于15—20nm时,这种效应变得非常明 关键词： 改进嵌入原子法 Mo纳米薄膜 表面自由能 热容     

金属纳米线弹性性能的尺寸效应及其内在机理的模拟研究

本文应用分子动力学(MD)方法和改进分析型嵌入原子模型(MAEAM)研究了Ni, Al和V纳米线的弹性性能尺寸效应及表面对其影响, 并计算了相应完整晶格材料的弹性性能. 结果表明本文计算完整晶格材料的弹性性能与已有实验和理论的结果相符合. 而计算所得各金属纳米线的体模量明显低于相应块体材料的结果, 且随纳米线的尺寸增加而呈指数增加, 并接近于常数. 在此基础上, 通过研究Ni, Al和V纳米线表面能的尺寸效应及其分布特征进一步探讨了自由表面在尺寸影响纳米线弹性性能过程中的作用及其内在机理.     

BaHfO3纳米薄膜电子结构、光学和弹性性质的第一性原理研究

采用基于密度泛函理论的第一性原理方法,在局域密度近似（LDA）下研究了厚度为0.626～2.711nm (100)面BaHfO3薄膜的电子结构、光学和弹性性质．电子结构和光学性质计算结果表明：以BaO为表面层原子的BaHfO3纳米薄膜均为直接带隙半导体材料,带隙随薄膜厚度减小而逐渐减小,表现出明显的量子尺寸效应,此时薄膜的光学吸收边发生红移,吸收带出现窄化现象．以HfO2作为表面层原子的BaHfO3薄膜则属于间接带隙半导体材料,且带隙随薄膜厚度减小而微弱增加．弹性性质计算结果表明：体弹模量、剪切模量和杨氏模量等表征材料硬度的力学参数均随BaHfO3纳米薄膜厚度减小而显著减小,呈现尺寸效应．电荷密度分布分析揭示了薄膜厚度改变了BaHfO3纳米薄膜的价健特性,这是材料硬度改变的内在原因．该研究结果为BaHfO3纳米薄膜材料的设计与应用提供了理论依据．     

Be(0001)薄膜中的量子尺寸效应与吸附氢的第一性原理计算

通过基于密度泛函理论的第一性原理方法对铍自由表面的电子结构及表面原子氢的吸附能作了详细计算，给出Be(0001)薄膜的电子结构、表面能、电子功函数、层间弛豫等物理量随厚度变化关系，同时讨论了原子氢在Be(0001) 表面的吸附性质，给出了吸附能及局域电子态密度随铍薄膜层厚的变化关系，体现了铍薄膜的量子尺寸效应.     

光电变色器件用纳米晶氧化钛薄膜的微结构与特性

纳米晶TiO2薄膜在光电变色器件中具有很重要的作用。它的微结构直接影响染料的吸附、光的散射以及电荷输运的特性。因此，探索TiO2薄膜的微结构(如粒径、表面形貌和厚度等)及光电性能是非常有意义的。采用电子束蒸发工艺制备了光电变色器件用纳晶TiO2薄膜，利用原子力显微镜、X射线衍射、俄歇电子能谱等手段对纳米晶TiO2薄膜的表面形貌、结晶状态及组分进行了分析。从理论上研究和讨论了纳米晶TiO2薄膜晶粒尺寸对光电性能的影响，并用量子限制效应解释了吸收光谱峰值波长随粒径减小而发生蓝移的现象。     

金属薄膜表面化学反应活性中的量子尺寸效应

本文首先简要介绍了金属薄膜的量子尺寸效应及其对表面化学性质的影响,然后对Pb/si体系量子尺寸效应的近期研究进行了综述,最后详细介绍了量子效应对表面化学反应活性的影响.扫描隧道显微镜观察表明:在Pb(111)单晶薄膜表面卜的分子吸附和氧化反应随着薄膜厚度一个原子层一个原子层变化时会出现振荡现象.通过研究薄膜中量子阱态的形成、费米能级处电子态密度的变化与薄膜的表面反应活性之间的关系,我们从实验上直接定量地证明了最子尺寸效应对表面反应活性的调控作用.     

金属薄膜表面化学反应活性中的量子尺寸效应

本文首先简要介绍了金属薄膜的量子尺寸效应及其对表面化学性质的影响,然后对Pb/Si体系量子尺寸效应的近期研究进行了综述,最后详细介绍了量子效应对表面化学反应活性的影响。扫描隧道显微镜观察表明:在Pb(111)单晶薄膜表面上的分子吸附和氧化反应随着薄膜厚度一个原子层一个原子层变化时会出现振荡现象。通过研究薄膜中量子阱态的形成、费米能级处电子态密度的变化与薄膜的表面反应活性之间的关系,我们从实验上直接定量地证明了量子尺寸效应对表面反应活性的调控作用。     

Ti掺杂对高熵合金FeCrVMoTix(x=0-1)结构和力学性能的影响

采用第一性原理方法研究了Ti对高熵合金FeCrVMoTi_x结构、弹性和塑性的影响.分别用混合焓、原子尺寸差、价电子浓度、相对熵效应和结合能评价FeCrVMoTi_x结构的稳定性,研究发现BCC型的FeCrVMoTi_x在x=0.0-0.9范围内都是结构稳定的.另外,弹性和塑性的计算发现,块体模量随Ti的增加而线性减小.剪切模量和杨氏模量首先随x的增加而变大,然后达到最大值,最后随x的进一步增加而快速减小. Ti的掺杂有助于提高FeCrVMoTi_x的屈服强度和抗拉强度,其中FeCrVMoTi_0.57的拉伸性能最好.热力学的计算表明压强能够抑制FeCrVMoTi_0.57的体膨胀系数,并增强其德拜温度.     

硅纳米薄膜中声子弹道扩散导热的蒙特卡罗模拟

通过建立声子散射概率函数描述声子在输运过程中的散射,提出了一种模拟声子弹道扩散导热的蒙特卡罗方法,并将其应用于硅纳米薄膜中的稳态和瞬态弹道扩散导热过程的研究. 提出的蒙特卡罗方法对边界发射的声子束进行跟踪,根据散射概率函数模拟声子束在传播区域内经历的散射过程,并通过统计声子束的分布得到温度分布. 稳态导热过程的模拟发现,尺寸效应会引起边界温度跳跃,其值随着Knudsen数的增大而增大;计算的硅纳米薄膜的热导率随着厚度的增大而增大,与文献中的实验数据和理论模型相符. 通过瞬态导热过程的模拟得到了纳米薄膜内的温度分布随时间的变化,发现瞬态导热过程中的热波现象与空间尺度相关,材料尺寸越小,弹道输运越强,薄膜中的热波现象也越显著. 关键词： 纳米薄膜 弹道扩散导热 蒙特卡罗模拟 尺寸效应     

金属纳米棒弯曲力学行为的分子动力学模拟

纳米结构的力学性能是纳米超微型器件设计的基础,分子动力学是研究纳米结构力学行为的有效方法.本文采用镶嵌原子方法模拟金属铜纳米棒的弯曲力学行为.计算结果表明由于尺寸效应和表面效应的影响,在纳观尺度下纳米结构表现出与宏观尺度下完全不同的力学特征.金属纳米棒弯曲力学过程分为初始变形迟滞阶段、线弹性变形阶段和塑性变形阶段.塑性变形阶段表现出“刚化”、“台阶”和较强的延性等特征. 关键词： 纳米结构 纳米棒 弯曲性能 分子动力学     

Effects of surface charges on phonon properties and thermal conductivity in GaN nanofilms

Surface charges can modify the elastic modulus of nanostructure, leading to the change of the phonon and thermal properties in semiconductor nanostructure. In this work, the influence of surface charges on the phonon properties and phonon thermal conductivity of GaN nanofilm are quantitatively investigated. In the framework of continuum mechanics,the modified elastic modulus can be derived for the nanofilm with surface charges. The elastic model is presented to analyze the phonon properties such as the phonon dispersion relation, phonon group velocity, density of states of phonons in nanofilm with the surface charges. The phonon thermal conductivity of nanofilm can be obtained by considering surface charges. The simulation results demonstrate that surface charges can significantly change the phonon properties and thermal conductivity in a GaN nanofilm. Positive surface charges reduce the phonon energy and phonon group velocity but increase the density of states of phonons. The surface charges can change the size and temperature dependence of phonon thermal conductivity of GaN nanofilm. Based on these theoretical results, one can adjust the phonon properties and temperature/size dependent thermal conductivity in GaN nanofilm by changing the surface charges.     

Influence of surface scattering on the thermal properties of spatially confined GaN nanofilm

Gallium nitride(GaN), the notable representative of third generation semiconductors, has been widely applied to optoelectronic and microelectronic devices due to its excellent physical and chemical properties. In this paper, we investigate the surface scattering effect on the thermal properties of GaN nanofilms. The contribution of surface scattering to phonon transport is involved in solving a Boltzmann transport equation(BTE). The confined phonon properties of GaN nanofilms are calculated based on the elastic model. The theoretical results show that the surface scattering effect can modify the cross-plane phonon thermal conductivity of GaN nanostructures completely, resulting in the significant change of size effect on the conductivity in GaN nanofilm. Compared with the quantum confinement effect, the surface scattering leads to the order-of-magnitude reduction of the cross-plane thermal conductivity in GaN nanofilm. This work could be helpful for controlling the thermal properties of Ga N nanostructures in nanoelectronic devices through surface engineering.     

Au纳米薄膜的熔化机理及其结构演变的分子动力学模拟

利用分子动力学模拟详细研究了不同厚度的Au纳米薄膜的熔化机理和结构演变. 模拟结果表明所有Au纳米薄膜的熔化行为分为两个阶段,即表面预熔和均相熔化. 只有最外层原子出现了预熔化行为, 其他内层原子在均相熔化之前始终保持稳定的固态,这与零维的Au纳米团簇和一维的Au纳米线的预熔化行为是不同的. 同时Au纳米薄膜的熔化温度随着薄膜厚度的增加而升高. 在预熔化过程中,在原子水平上发现了所有的Au纳米薄膜的f100g晶面向f111g晶面转变的表面重建过程. 对于最薄的L2纳米薄膜,当温度低于500 K 时表面应力不能诱导这样的表面重建. 然而一维的Au纳米线在更低温度下就能够观察到了由表面应力诱导的表面重建过程. 这主要是因为Au纳米线具有更高的比表面积所导致的. 另外研究结果还表明当模拟温度达到某一特定值时,由双原子层组成的Au纳米薄膜能够分裂成一维的纳米线.     

Experimental Studies on Thermal and Electrical Properties of Platinum Nanofilms

We experimentally studied the in-plane thermal and electrical properties of a suspended platinum nanofilm in thickness of 15 nm. The measured results show that the in-plane thermal conductivity, the electrical conductivity and the resistance-temperature coefficient of the studied nanofilm are much less than those of the bulk material, while the Lorenz number is greater than the bulk value. Comparing with the results reported previously for the platinum nanofilm in thickness of 28 nm, we further find that the in-plane thermal conductivity, the electrical conductivity and the resistance-temperature coefficient decrease with the decreasing thickness of the nanotilm, while the Lorenz number increases with the decreasing thickness of the nanofilm. These results indicate that strong size effects exist on the in-plane thermal and electrical properties of platinum nanofilms.     

金属纳米薄膜在石墨基底表面的动力学演化

采用分子动力学方法研究了金属Au和Pt纳米薄膜在石墨(烯)基底表面的动力学演化过程,探讨了金属薄膜和石墨(烯)基底间的相互作用对金属纳米薄膜在固态基底表面的去湿以及脱附的动力学演化的影响.研究结果表明,在高温下,相同层数的Au和Pt纳米薄膜在单层石墨基底表面上存在不同的去湿现象,主要表现为厚度较小的Pt纳米薄膜在去湿过程中有纳米空洞形成,而同样厚度的Au薄膜在去湿过程中没有形成空洞.Au和Pt两种金属薄膜在高温下都去湿形成纳米液滴,这些液滴最终都以一定的速度脱离基底.在模拟的薄膜厚度范围内(0.2—2.3 nm),Au和Pt纳米液滴脱离基底的速度随厚度增加表现出不同的变化规律.Pt纳米液滴的脱离速度随薄膜初始厚度的增加先增加后减少,而Au脱离速度随厚度的增加先减少,达到一个临界厚度后脱离速度突然迅速增加.利用薄膜与基底间相互作用的不同导致去湿过程中的黏滞耗散不同,定性分析了这种变化规律的原因.此外,进一步研究还发现金属液滴的脱离时间与薄膜厚度和模拟温度的依赖关系,发现脱离时间随薄膜厚度的增加而增加,随模拟温度的升高而减小.这些研究结果可以为金属镀膜、浮选、表面清洁、器件表面去湿等工业生产过程提供理论指导.     

Elongation rate measurements of nanofilms by microbump method induced by laser pulse

A laser pulse-induced microbump method that aims to measure the elongation rate of nanofilms is proposed. The sample structure is designed as “substrate/active layer/nanofilm” and the laser pulse is used as energy source to heat the active layer and to create microbump. These cause the nanofilm to expand and elongate. The surface area and length change of nanofilm is calculated by measuring the deflections and diameters of the microbumps, as well as to obtain the elongation rate of the nanofilms. A series of microbumps with different deflections are obtained. The deflections are measured precisely by atomic force microscopy (AFM) by taking AgO_x and ZnS-SiO₂ as the active layer and nanofilm, respectively, and by controlling pulse laser parameters. The line elongation rate and plane elongation rate of ZnS-SiO₂ nanofilm are measured at thickness of only 10 nm. Results show that both the two elongation rates linearly increases with laser power from 3.2 to 5.2 mW. Plane elongation rate is a little higher than the line elongation rate at the same laser power. The rupture at 5.4 mW laser power corresponds to fracture strength of the film. The maximum line elongation rate and plane elongation rate are 13.241% and 19.766%, respectively. This method applies a reproducible and efficient method for its applications in the near future.     

Electrostatic Nature of Size Dependences of Adsorption Properties of Ytterbium Nanofilms Grown on the Surface of Silicon: the CO–Yb–Si(111) System

The adsorption of CO molecules onto ytterbium nanofilms with their thickness varying from 1 to 16 monolayers is studied. The dependences of the number of adsorbed CO molecules (adsorption isotherms) and the work function of ytterbium films on the dose of carbon monoxide are examined. It is demonstrated that both the number of adsorbed molecules and the work function depend (under equal conditions) on the nanofilm thickness; in other words, a size effect is revealed. It is found that this size effect is induced by the electrostatic interaction between the conduction electrons of ytterbium and the electrons localized on the nanofilm surface, which establish bonding between the surface and CO molecules. This interaction depends on the film thickness and limits the number of CO molecules that may be adsorbed onto the surface of a film with a given thickness.

     

Angle-resolved photoemission study of Ag nanofilms grown on fcc transition-metal (111) substrates

A comparative study of the electronic structures of Ag nanofilms on the pseudomorphic metastable fcc Fe(111) and bulk-like fcc Co(111) substrates has been carried out to investigate their quantized electronic structures. The photoemission spectra of both Ag nanofilms exhibit the fine structures derived from the quantized sates of Ag sp valence electron. The nanofilm-thickness dependences of the binding energy of the quantized states are reproduced by the calculated results based on the phase accumulation model. From the angle-resolved photoemission measurements, the effective masses of the quantized electronic states along the direction parallel to the nanofilm surface were directly determined. We discuss the electronic hybridization effect between quantized states in Ag nanofilm and 3d-derived electronic states in transition-metal substrates.     

Ti~+离子注入结合热退火法制备TiO_2纳米薄膜研究

利用金属蒸发真空多弧离子源(MEVVA源)注入机将Ti+离子注入到高纯石英玻璃衬底中,离子注入的加速电压为20 k V,注入剂量为1.5×1017和3×1017ions/cm2,将注入样品在氧气气氛下进行热退火处理,制备了TiO2纳米薄膜。采用光吸收谱、拉曼光谱、X射线光电子能谱、扫描电子显微镜和透射电子显微镜对注入样品进行了测试和表征,分析了TiO2薄膜的形成机理。在热退火过程中衬底中离子注入的Ti原子向外扩散到衬底表面被氧化形成了TiO2。TiO2的形成、晶粒尺寸和晶体结构依赖于热退火温度,而形成TiO2薄膜的厚度主要受离子注入剂量和热退火时间的影响。实验结果表明,该方法制备的TiO2纳米薄膜将有望应用于制备具有光催化、自清洁等特殊性能的自清洁玻璃。