高压下BaHfO3电子结构与光学性质的第一性原理研究

从第一性原理出发,在局域密度近似下,采用基于密度泛函理论的平面波超软赝势计算方法系统地研究了高压对BaHfO3电子结构与光学性质的影响．能带结构分析表明：无压强和施加正压强作用时,BaHfO3为直接带隙绝缘体,而施加负压强时,BaHfO3则转变为间接带隙半导体;BaHfO3的带隙随压强增加而减小,且具有明显的非线性关系．对光学性质的分析发现：施加正压强后,光学吸收带边产生蓝移;负压强作用时介电函数虚部尖峰减少,光学吸收带边产生红移;施加压强后BaHfO3的静态介电常数和静态折射率均增大．上述研究表明施加高压有效调制了BaHfO3的电子结构和光学性质,计算结果为BaHfO3光电材料的设计与应用提供了理论依据．     

掺杂BaHfO3电子结构与力学性能的第一性原理研究

在广义梯度近似（GGA）下,采用基于密度泛函理论的第一性原理方法研究了掺杂对BaHfO3的电子结构与力学性能的影响．电子结构计算表明：优化的BaHfO3晶格常数与实验值吻合较好,BaHfO3为一种间接带隙的绝缘体材料．掺杂Sr和Ti后该材料仍为间接带隙材料,Ba0.5Sr0.5HfO3的带隙增大,绝缘体特征增强,而BaHf0.5Ti0.5O3的带隙显著减小,呈现出半导体材料的特征．由态密度分析可知,掺杂后带隙的变化主要是由于导带底的移动造成的．力学性能分析表明：与BaHfO3相比,Ba0.5Sr0.5HfO3的剪切模量和杨氏模量均明显减小,材料硬度减弱;BaHf0.5Ti0.5O3的剪切模量及杨氏模量均明显增大,材料硬度增强．电子密度分布分析揭示了掺杂改变体系价电子浓度的分布情况,使BaHfO3的价健特性发生了变化,这是材料硬度改变的内在原因．可见,掺杂能够有效地调控体系的硬度,该研究结果为掺杂BaHfO3力电材料的设计与应用提供了理论依据．     

掺杂BaHfO3电子结构与力学性能的第一性原理研究

在广义梯度近似(GGA)下,采用基于密度泛函理论的第一性原理方法研究了掺杂对BaHfO3的电子结构与力学性能的影响.电子结构计算表明:优化的BaHfO3晶格常数与实验值吻合较好,BaHfO3为一种间接带隙的绝缘体材料.掺杂Sr和Ti后该材料仍为间接带隙材料,Ba0.5Sr0.5HfO3的带隙增大,绝缘体特征增强,而BaHf0.5Ti0.5O3的带隙显著减小,呈现出半导体材料的特征.由态密度分析可知,掺杂后带隙的变化主要是由于导带底的移动造成的.力学性能分析表明:与BaHfO3相比,Ba0.5 Sr0.5 HfO3的剪切模量和杨氏模量均明显减小,材料硬度减弱;BaHf0.5Ti0.5O3的剪切模量及杨氏模量均明显增大,材料硬度增强.电子密度分布分析揭示了掺杂改变体系价电子浓度的分布情况,使BaHfO3的价健特性发生了变化,这是材料硬度改变的内在原因.可见,掺杂能够有效地调控体系的硬度,该研究结果为掺杂BaHfO3力电材料的设计与应用提供了理论依据.     

Fe, S共掺杂SnO2材料第一性原理分析

本文采用基于第一性原理的全电势线性缀加平面波(FP-LAPW)法, 计算了Fe, S两种元素共掺杂SnO₂材料的电子结构和光学性质. 结果表明: 材料仍为直接禁带半导体, 体系呈现半金属性; Fe, S共掺可以窄化带隙, 且随S浓度增加, 态密度向低能方向移动, 带隙减小; 共掺体系电荷密度重新分布, 随S浓度增加, Fe原子极化程度增强, 原子间键合能力增强. 共掺后介电函数虚部谱与光学吸收谱各峰随S浓度增加而发生红移, 光学吸收边减小.     

Rb吸附石墨烯纳米带电子性质和光学性质的研究

本文基于密度泛函理论的第一性原理方法了计算了Rb、O和H吸附石墨烯纳米带的差分电荷密度、能带结构、分波态密度和介电函数，调制了石墨烯纳米带的电子性质和光学性质，给出了不同杂质影响材料光学特性的规律.结果表明本征石墨烯纳米带为n型直接带隙半导体且带隙值为0.639 eV；Rb原子吸附石墨烯纳米带之后变为n型简并直接带隙半导体，带隙值为0.494eV；Rb和O吸附石墨烯纳米带变为p型简并直接带隙半导体，带隙值增加为0.996eV；增加H吸附石墨烯纳米带后，半导体类型变为n型直接带隙半导体，且带隙变为0.299eV，带隙值相对减小，更有利于半导体发光器件制备.吸附Rb、O和H原子后，石墨烯纳米带中电荷密度发生转移，导致C、Rb、O和H之间成键作用显著.吸附Rb之后，在费米能级附近由C-2p、Rb-5s贡献；增加O原子吸附之后，O-2p在费米能级附近贡献非常活跃，杂化效应使费米能级分裂出一条能带；再增加H原子吸附之后，Rb-4p贡献发生蓝移，O-2p在费米能级附近贡献非常强，费米能级分裂出两条能带.Rb、O和H的吸附后，明显调制了石墨烯纳米带的光学性质.     

扶手椅型C3B纳米带:结构稳定性、电子特性及调控效应

单层C₃B是典型的类石墨烯二维材料,已在实验上成功制备.采用密度泛函理论方法(DFT)研究了扶手椅型单层C₃B纳米带的结构稳定性、电子性质及物理调控效应,计算结果表明:对于裸边纳米带,如果带边缘全由C原子组成(AA型),则电子相为半导体;两个带边缘均由C与B原子混合组成时(BB型),则纳米带的电子相为金属;而纳米带的一边由C原子组成、另一边由B与C原子混合构成(AB型),则纳米带的电子相为金属.这说明纳米带边缘的B原子对于纳米带成为金属或半导体起决定作用.而对于H端接的纳米带,它们全部为直接或间接带隙半导体.H端接的纳米带载流子迁移率一般比裸边纳米带低,这与它们较大的有效质量及较高的形变势有密切关系.同时发现半导体性质的纳米带对物理调控非常敏感,特别是在压应变和外电场作用下,纳米带的带隙明显变小,这有利于对光能的吸收和研发光学器件.     

第一性原理研究厚度和空位缺陷对Si/SiO2界面电子结构与光学性质的影响

采用基于密度泛函理论的平面波超软赝势方法,在局域密度近似（LDA）下研究了Si纳米层厚度和O空位缺陷对Si/SiO2界面电子结构及光学性质的影响．电子结构计算结果表明：在0.815~2.580nm的Si层厚度范围内,Si/SiO2界面结构的能隙随着厚度减小而逐渐增大,表现出明显的量子尺寸效应,这与实验以及其他理论计算结果一致;三种不同的O空位缺陷的存在均使得Si/SiO2界面能隙中出现了缺陷态,费米能级向高能量方向移动,且带隙有微弱增加．光学性质计算结果表明：随着Si纳米层厚度的减小,Si/SiO2界面吸收系数产生了蓝移;O空位缺陷引入后,界面光学性质的变化主要集中在低能区,即低能区的吸收系数和光电导率显著增加．可见,改变厚度和引入缺陷能够有效地调控Si/SiO2界面体系的电子和光学性质,上述研究结果为Si/SiO2界面材料的设计与应用提供了一定的理论依据．     

第一性原理研究厚度和空位缺陷对Si/SiO2界面电子结构与光学性质的影响

采用基于密度泛函理论的平面波超软赝势方法,在局域密度近似（ LDA）下研究了Si纳米层厚度和O空位缺陷对Si／SiO2界面电子结构及光学性质的影响．电子结构计算结果表明：在0.815～2.580nm的Si层厚度范围内, Si／SiO2界面结构的能隙随着厚度减小而逐渐增大,表现出明显的量子尺寸效应,这与实验以及其他理论计算结果一致;三种不同的O空位缺陷的存在均使得Si／SiO2界面能隙中出现了缺陷态,费米能级向高能量方向移动,且带隙有微弱增加．光学性质计算结果表明：随着Si纳米层厚度的减小, Si／SiO2界面吸收系数产生了蓝移; O空位缺陷引入后,界面光学性质的变化主要集中在低能区,即低能区的吸收系数和光电导率显著增加．可见,改变厚度和引入缺陷能够有效地调控Si／SiO2界面体系的电子和光学性质,上述研究结果为Si／SiO2界面材料的设计与应用提供了一定的理论依据．     

硫化锡电子结构和光学性质的量子尺寸效应

基于密度泛函理论的第一性原理计算,系统研究了硫化锡(SnS)晶体、纳米单层及多层的结构稳定性、电子结构和光学性质.结果表明:由于相对弱的层间范德瓦尔斯力作用,SnS单层纳米片可以像石墨烯等二维材料一样从块体中剥离出来;受制于量子尺寸效应和层间相互作用的影响,SnS的结构稳定性随层数减少而逐渐减弱,其带隙随层数减少而逐渐增大;由于材料的本征激发和吸收取决于电子结构,因此改变SnS材料的层数可以到达调控其光学性质的目的;SnS块体和纳米结构的主要光学吸收峰起源于Sn-5s,5p和S-2p轨道之间的电子跃迁;并且从块体到单层纳米结构,SnS的光学吸收峰出现明显的蓝移.本文的研究将有助于SnS材料在太阳能电池领域的应用.     

层数调控磷烯能带与光学性质的研究

近年来,黑磷作为兼具石墨烯和过渡金属硫化物之长的新型二维材料而倍受关注.本文基于密度泛函理论,研究了不同厚度黑磷的电子结构与光学性质.结果表明,黑磷的性质与其厚度密切相关,可通过厚度调整实现能带与光学性质的可调控性.层间相互作用导致费米能级附近价带和导带的劈裂,是造成黑磷带隙随层数减小的根本原因.黒磷的静态折射率和静态反射率的大小均随层数的增大有增大的趋势,并且各层黑磷的反射峰均位于紫外光波段.黑磷对光的吸收涵盖了可见光到紫外光区域,对光的损失范围小于4eV.本文基于能带图和分波态密度图,从电子跃迁的角度分析了黑磷各项光学性质的变化情况,旨在为黑磷的带隙及光学性质层数可调控性提供理论依据.     

Influence of sintering conditions on structural,thermal, electric and ferroelectric properties of Na0.5Bi0.5TiO3 ceramics

Na_0.5Bi_0.5TiO₃ ceramics were prepared by a conventional solid-state reaction method and by a hot-pressing route. The influence of sintering conditions on structural, thermal, dielectric and ferroelectric properties of these ceramics was investigated. All obtained samples exhibited a single perovskite phase. It was shown that the sintering conditions significantly influence the properties under investigation. This includes changes in the value of the electric permittivity ? and dielectric loss tanδ, a shift of T_m and T_d and change of the ferroelectric properties. These effects are mainly related to volatility of the Na and Bi components during the sintering process along with formation of their compensating charge defects, which leads to local structure change.     

The pressure dependences of elastic and lattice dynamic properties of AlAs from ab initio calculations

Ab initio calculations,based on norm-conserving nonlocal pseudopotentials and density functional theory(DFT),are performed to investigate the structural,elastic,dielectric,and vibrational properties of aluminum arsenide(AlAs) with a zinc-blende(B3) structure and a nickel arsenide(B81) structure under hydrostatic pressure.Firstly,the path for the phase transition from B3 to B81 is confirmed by analyzing the energies of different structures,which is in good agreement with previous theoretical results.Secondly,we find that the elastic constants,bulk modulus,static dielectric constants,and the optical phonon frequencies vary in a nearly linear manner under hydrostatic pressure.What is more,the softening mode of the transversal acoustic mode at the X point supports the phase transition in AlAs.     

Pressure dependences of elastic and lattice dynamic properties of AlAs from ab initio calculations

Ab initio calculations, based on norm-conserving nonlocal pseudopotentials and density functional theory (DFT), are performed to investigate the structural, elastic, dielectric, and vibrational properties of aluminum arsenide AlAs with zinc-blende (B3) structure and nickel arsenide (B8₁) structure under hydrostatic pressure. Firstly, the path for the phase transition from B3 to B8₁ is confirmed by analyzing the energies of different structures, which is in good agreement with previous theoretical results. Secondly, we find that the elastic constants, bulk modulus, static dielectric constants, and the optical phonon frequencies are varying in a nearly linear manner under hydrostatic pressure. What is more, the softening mode of transversal acoustic mode at X point supports the phase transition in AlAs.     

Correlation of sp and sp fraction of carbon with electrical, optical and nano-mechanical properties of argon-diluted diamond-like carbon films

In the present work the correlation of electrical, optical and nano-mechanical properties of argon-diluted diamond-like carbon (Ar-DLC) thin films with sp³ and sp² fractions of carbon have been explored. These Ar-DLC thin films have been deposited, under varying C₂H₂ gas pressures from 25 to 75 mTorr, by radio frequency-plasma enhanced chemical vapor deposition technique. X-ray photoelectron spectroscopy studies are performed to estimate the sp³ and sp² fractions of carbon by deconvoluting C 1s core level spectra. Various electrical, optical and nano-mechanical parameters such as conductivity, I-V characteristics, optical band gap, stress, hardness, elastic modulus, plastic resistance parameter, elastic recovery and plastic deformation energy have been estimated and then correlated with calculated sp³ and sp² fractions of carbon and sp³/sp² ratios. Observed tremendous electrical, optical and nano-mechanical properties in Ar-DLC films deposited under high base pressure conditions made it a cost effective material for not only hard and protective coating applications but also for electronic and optoelectronic applications.     

Structural,optoelectronic and thermoelectric properties of antiperovskite compounds Ae3PbS (Ae = Ca,Sr and Ba): A first principles study

In the last years, alkaline-earth based antiperovskite compounds with small semiconductor band gap have been proven to be promising candidate for optoelectronic and thermoelectric applications. In this work, the structural, electronic, optical and thermoelectric properties of Ae₃PbS (Ae = Ca, Sr and Ba) compounds have been predicted using first principles calculations based on the full-potential linearized augmented plane-wave (FP-LAPW) method and semiclassical Boltzmann transport theory. Exchange-correlation effect is treated with the generalized gradient approximation with Perdew–Burke–Ernzerhof scheme (GGA-PBE) and Tran–Blaha modified Becke–Johnson exchange potential. The lattice constant of considered materials increases as Ae goes in order from Ca to Ba and the hardness slightly decreases in this order. Ca₃PbS and Sr₃PbS are semiconductor with direct band gap of 0.199 eV and 0.116 eV, respectively, while Ba₃PbS is nearly metallic. Important optical responses of studied antiperovskites are found in the visible and ultraviolet energy range. Finally, the thermoelectric properties including Seebeck coefficient, electrical conductivity, thermal conductivity, power factor and figure of merit are calculated. Obtained results show that Ca₃PbS and Sr₃PbS could be candidate for applications in thermoelectric generators at low and moderate temperatures due to their high figure of merit values.     

多组分复合薄膜的光学、电学、机械性能及其应用

复合薄膜因其可具有比单组份薄膜更加优异的性能而得到广泛的应用。通过以膜层的防护、催化、电学、光学以及力学性能等复合思想为切入点，阐述了通过膜层的复合掺杂旨在增强合金的抗腐蚀性，提高润滑摩擦性能，改善膜层的导电性能以及进行光学薄膜折射率和光谱吸收的调控，增强膜层的硬度及拉伸强度等机械性能的方法。对国内外的相关前沿成果进行简要介绍，并对复合薄膜的未来发展进行展望，为相关领域的研究提供参考。     

Structural,elastic, thermodynamic and electronic properties of LuX (X = N,Bi and Sb) compounds: first principles calculations

ABSTRACT

The structural, electronic, elastic and thermodynamic properties of LuX (X = N, Bi and Sb) based on rare earth into phases, Rocksalt (B1) and CsCl (B2) have been investigated using full-potential linearized muffin-tin orbital method (FP-LMTO) within density functional theory. Local density approximation (LDA) for exchange-correlation potential and local spin density approximation (LSDA) are employed. The structural parameters as lattice parameters a₀, bulk modulus B, its pressure derivate B’ and cut-off energy (E_c) within LDA and LSDA are presented. The elastic constants were derived from the stress–strain relation at 0 K. The thermodynamic properties for LuX using the quasi-harmonic Debye model are studied. The temperature and pressure variation of volume, bulk modulus, thermal expansion coefficient, heat capacities, Debye temperature and Gibbs free energy at different pressures (0–50 GPa) and temperatures (0–1600 K) are predicted. The calculated results are in accordance with other data.     

Theoretical investigations of phases of AlAs by first-principles

Five potential novel phases of AlAs (Pmn2₁-AlAs, Pbam-AlAs, Pbca-AlAs, bct-AlAs and wz-AlAs) are proposed and the stabilities of them are verified by the enthalpy, independent elastic constants and phonon dispersion spectra. The mechanical, electronic and thermodynamic properties of ten AlAs phases are studied and the electronic properties are calculated by PBE0 hybrid functional. Pmn2₁-AlAs and Pbam-AlAs own direct band gaps, so they have electronic advantages over other phases of AlAs at 0?GPa. Our calculated band gaps are 3.02, 3.07, 3.21, 2.76, 3.12, 1.15, 1.88, 2.53, 2.75 and 2.53?eV for Pmn2₁-AlAs, Pbam-AlAs, Pbca-AlAs, bct-AlAs, wz-AlAs, oC12-AlAs, hP6-AlAs, cI24-AlAs, zb-AlAs and cmcm-AlAs, respectively. Additionally, these phases: Pmn2₁-AlAs, Pbam-AlAs, Pbca-AlAs, bct-AlAs, cI24-AlAs, and cmcm-AlAs behave in a ductile manner, and wz-AlAs, oC12-AlAs, hP6-AlAs and zb-AlAs behave in a brittle manner. Otherwise, cmcm-AlAs has the greatest anisotropy, and hP6-AlAs has the least anisotropy.     

The investigation of structural,electronic, elastic and thermodynamic properties of Gd1−xYxAuPb alloys: A first principle study

First principle calculations have been employed to investigate the effects of Y concentration, pressure and temperature on various properties of ${\mathrm{Gd}}_{1?x}{\mathrm{Y}}_x\mathrm{AuPb}$ ($x=0,0.25,0.5,0.75,1$) alloys using density functional theory (DFT). The full potential linearized augmented plane wave (FP-LAPW) method within a framework of the generalized gradient approximation (GGA) is used to perform the calculated results of this paper. Phase stability of ${\mathrm{Gd}}_{1?x}{\mathrm{Y}}_x\mathrm{AuPb}$ alloys is studied using the total energy versus unit cell volume calculations. The equilibrium lattice parameters of these alloys are in good agreement with the available experimental results. The mechanical stability of ${\mathrm{Gd}}_{1?x}{\mathrm{Y}}_x\mathrm{AuPb}$ alloys is proved using elastic constants calculations. Also, the influence of Y concentration on elastic properties of ${\mathrm{Gd}}_{1?x}{\mathrm{Y}}_x\mathrm{AuPb}$ alloys such as Young's modulus, shear modulus, Poisson's ratio and anisotropy factor are investigated and analyzed. By considering both Pugh's ratio and Poisson's ratio, the ductility and brittleness of these alloys are studied. In addition, the total density of states and orbital's hybridizations of different atoms are investigated and discussed. Moreover, the effect of pressure and temperature on some important thermodynamic properties is investigated.     

Dielectric and ferroelectric properties of NBT-BT systems

ABSTRACT

The (1-x)Na_0.5Bi_0.5TiO₃- xBaTiO₃ ceramics (x = 0.1, 0.135 and 0.17) were fabricated by a conventional solid phase sintering process. The bulk density of the obtained samples exceeded 95% of the theoretical relative density as determined by Archimedes method. Dielectric and ferroelectric measurements of these ceramics were performed. Measurements of the ferroelectric properties show that, above the depolarization temperature T_d, the shape of the hysteresis loops approaches that of linear dielectrics. The dielectric study results correlate with the hysteresis loops measurements. The relaxor-like behavior of the investigated materials was revealed.