钛酸铅及掺杂体系纳米晶A_1对称性横光学声子模的特征

本文讨论了ＰｂＴｉＯ３、Ｐｂ１－ｘＬａｘＴｉ１－ｘ／４Ｏ３和Ｐｂ１－ｘＣａｘＴｉＯ３纳米晶拉曼散射中Ａ１（ＴＯ）声子峰的不规则线型和多峰劈裂现象。认为以简正振动坐标构成的非谐性双势阱势能函数和Ｍｏｒｓｅ势能函数的Ｓｃｈｒｄｉｎｇｅｒ方程的解与实验观测到的Ａ１（１ＴＯ）模式在高温下的劈裂峰特征比较一致。从能量角度解释了随ｃ／ａ下降,ωＡ１（ＴＯ）快速向低频移动的原因。     

分子束外延Zn_（1－x）Cd_xSe／ZnSe超晶格的拉曼光谱

运用分子束外延（ＭＢＥ）技术成功地生长出Ｚｎ１－ｘＣｄｘＳｅ／ＺｎＳｅ超晶格，并对不同的样品进行了拉曼散射光谱的测试。获得了多达５级的ＺｎＳｅ的ＬＯ声子峰和ＺｎＳｅ的ＴＯ声子峰；同时还在频移为１４４ｃｍ－１、３７０ｃｍ－１处观测到了两个新声子峰，估计是来自于ＺｎＣｄＳｅ的声学模和光学模。     

AlGaN薄膜的微区Raman散射光谱研究

利用微区Ｒａｍａｎ散射技术,对低压ＭＯＣＶＤ生长的不同Ａｌ组分的ＡｌｘＧａ１－ｘＮ薄膜（ｘ＝０,０．０７,０．１５）进行了背散射Ｚ（Ｘ,Ｘ）Ｚ－几何配制下的测量．Ａ１（ＬＯ）模式的声子频移随Ａｌ组分的变化关系为：ω（ＡｌｘＧａ１－ｘＮ）＝（１＋０．２２０ｘ）ω（ＧａＮ）．观察到了Ａ１（ＬＯ）模式由于空间相关效应引起的展宽．Ｅ２模式随Ａｌ组分的的增大产生的移动很微小,但趋于展宽．这被认为是Ｅ２模式的声子频移随Ａｌ组分的增加而增大与其受到的张应力导致的声子频移随Ａｌ组分的增加而减小共同作用的结果．在多种配置下,观察到了Ａｌ０．０７Ｇａ０．９３Ｎ薄膜的Ａ１（ＴＯ）模式、Ａ１（ＬＯ）模式、Ｅ１（ＴＯ）模式和Ｅ２模式．验证了ＡｌｘＧａ１－ｘＮ薄膜的Ｒａｍａｎ选择定则．表明ＡｌｘＧａ１－ｘＮ薄膜具有单模行为．     

分子束外延Zn1—xCdxSe／ZnSe超晶格的拉曼光谱

运用分子束外延技术成功地生长出Ｚｎ１－ｘＣｄｘＳｅ／ＺｎＳｅ超晶格，并对不同的样品进行了拉曼散射光谱的测试。获得了多达５级的ＺｎＳｅ的ＬＯ声子峰和ＺｎＳｅ的ＴＯ声子峰；同时还在频移为１４４ｃｍ＾－１，３７０ｃｍ＾－１处观测到了两个新声子峰，估计是来自于ＺｎＣｄＳｅ的声学模和光学模。     

自发有序Ga_（0．5）In_（0．5）P合金的喇曼光谱研究

在室温和非共振条件下测量了自发有序Ｇａ０．５Ｉｎ０．５Ｐ合金的喇曼散射谱。测得的３８０，３６０和３３０ｃｍ－１附近的三个散射峰分别归结于合金中的类ＧａＰ的ＬＯ模、类ＩｎＰ的ＬＯ模和ＴＯＭ。发现有序合金的类ＧａＰ的ＬＯ模的声子频率随着合金的带隙能量的降低而增大。认为这与在有序合金中形成沿［１１１］方向的（ＧＳＰ）１／（ＩｎＰ）１单层超晶格有一定联系。在几种偏振配置下测得的有序合金的喇曼谱的偏振特性与通常的闪锌矿结构的半导体材料的偏振特性类似。     

超声射流冷却SO2^—A2—^1A1激光诱导荧光激发谱

测得了３１５￣３３０ｎｍ超声射流冷却下ＳＯ２＾１Ａ２－＾１Ａ１激光诱导荧光（ＬＩＦ）激发谱，获得了７个有明显Ｋ结构的Ｃ型跃迁的转动子带分辨谱，并将７０个转动子带归属为（１，ｍ，１）－（０，０，０）和（０，ｎ，１）－（０，０，０）（４≤ｍ≤７，８≤ｎ≤１０）的跃迁带系。光谱分析得到ＳＯ２＾１Ａ２－＾１Ａ１跃迁的带源ｖ００、＾１Ａ２态弯曲振动频率ｖ′２，非谐性常数Ｘ２２′分别为（２７９５０±５）、（２     

海洛因的傅里叶红外吸收谱

给出海洛因和鸦片的傅里叶红外吸收实测谱。根据吸收峰的位置，计算出海洛因的基本声子能量：ＥＬＯ＝０．０４８６ｅＶ，ＥＴＯ１＝０．０５５５ｅＶ，ＥＴＯ２＝０．０６１６ｅＶ，ＥＬＡ＝０．０２５７ｅＶ，ＥＴＡ１＝０．００９７ｅＶ，ＥＴＡ２＝０．０１３４ｅＶ。这些声子按照不同的组合方式，形成海洛因的全部傅里叶红外吸收峰。     

Nd∶LiTaO_3背散射组态下的喇曼光谱异常

本文研究了掺钕钽酸锂晶体背散射几何组态下的喇曼光谱，与纯钽酸锂晶体的喇曼光谱相比，发现喇曼谱中不仅有Ｅ（ＬＯ＋ＴＯ）模向Ａ１（ＴＯ）模的转变，而且还有新振动模的出现和部分振动模强度的变化，本文用光折变理论结合掺杂后晶体微观结构的改变对实验结果作了分析和探讨．     

NH4NO3掺杂Na^＋,K^＋,Ag^＋,Pb^2＋晶体相变拉曼峰强行为研究：掺杂效 …

从掺杂晶体（Ｎａ＾＋，Ｋ＾＋Ａｇ＾＋，Ｐｂ＾２＋）ｘ（ＮＨ４）１－ｘＮＯ３相变时，拉曼峰强与温度的变化关系着手，深入人了掺杂离子效应，揭示了其中的标度性质，本文分不下列算：（１）前言，（２）实验；（３）ｌｎＩｒ与Ｉｎ│Ｔ－Ｔｃ│之线性关系，（４）不同振动模对不同掺杂程度的反应；（５）ｖ１振动模对不同离子掺杂的刻画；（６）反转行为，（７）ｄｃ与Ｍ＾１／２的线性关系。（８）掺杂效应的标度性，（９）结语     

NH_4NO_3掺杂Na~+、K~+、Ag~+、Pb_(2+)晶体相变拉曼峰强行为研究:掺杂效应的标度性

从掺杂晶体（Ｎａ＋、Ｋ＋、Ａｇ＋、Ｐｂ２＋）ｘ（ＮＨ４）１－ｘＮＯ３相变时，拉曼峰强与温度的变化关系着手，深入讨论了掺杂离子的效应，揭示了其中的标度性质。本文分下列章节：（１）前言、（２）实验、（３）ｌｎＩＲ与ｌｎ｜Ｔ－Ｔｃ｜之线性关系、（４）不同振动模对不同掺杂程度的反应、（５）ν１振动模对不同离子掺杂的刻画、（６）‘反转’行为、（７）ｄｃ与Ｍ１／２的线性关系、（８）掺杂效应的标度性、（９）结语     

Resonance Raman scattering in graphene: Probing phonons and electrons

In this work, by using different laser excitation energies, we obtain important electronic and vibrational properties of mono- and bi-layer graphene. For monolayer graphene, we determine the phonon dispersion near the Dirac point for the in-plane transverse optical (iTO) mode. This result is compared with recent calculations that take into account electron–electron correlations for the phonon dispersion around the K point. For bilayer graphene we extract the Slonczewski–Weiss–McClure band parameters and compare them with recent infrared measurements. We also analyze the second-order feature in the Raman spectrum for trilayer graphene.     

纳米二氧化钛材料的相变和声子限制效应(英文)

拉曼光谱用于研究二氧化钛材料的相变和声子限制效应。化学溶液方法制备了TiO2纳米晶材料。其平均粒度为 6 8- 2 7 9nm。最低频率 1 5 2cm- 1 Eg 模随粒度减小出现蓝移和加宽。在声子限制模型下 ,理论上对不同粒度的TiO2 纳米晶 (6 8,1 0 3和 2 7 9nm)的频移和线宽进行计算 ,结果与实验吻合得很好。研究了TiO2 纳米晶锐钛矿 -金红石相变 ,其相变温度为 6 5 0 - 6 90℃ ,比体块TiO2 的相变温度 1 0 0 0℃低 ,表明了相变的尺寸效应     

Raman investigation of defective SiC nanocrystals

Phonon confinement effect and surface optical mode in SiC nanocrystal have been investigated through Raman spectroscopy. Considering high density of stacking faults in SiC grains, the correlation length of RWL (proposed by Richter, Wang, Li to explain phonon confinement in nano silicon) model is determined as a distance between nearby stacking faults. Thus, homogeneous region becomes thin slices in cylindrical SiC grains, which redefines weighting function. Effect of anisotropy of phonon dispersion curve is also analyzed during calculation. The additional 875‐cm⁻¹ band is attributed to defects and amorphous SiC, which is confirmed by transmission electron microscopy. SiC grains are approximated as column array with grain boundary substances regarded as surrounding medium, which explains surface optical phonon mode at 915 cm⁻¹. Copyright © 2015 John Wiley & Sons, Ltd.     

Surface‐enhanced Raman spectra of individual multiwalled carbon nanotubes with small innermost diameters

The Raman spectra of individual multiwalled carbon nanotubes (MWCNTs) with the innermost diameters of 0.6–0.9 nm are studied by surface‐enhanced Raman scattering. The influences of small innermost diameters to Raman features are investigated. A clear and relatively sharp Raman peak appears at 1510 cm⁻¹ when the innermost diameter is close to 0.6 nm. Lorentzian fits of G band indicate that its splitting is affected by the small innermost diameter of MWCNT. Moreover, the splitting of 2iTO mode is also observed at 2800–3000 cm⁻¹. Copyright © 2012 John Wiley & Sons, Ltd.     

Phonon anharmonicities in graphite and graphene

We determine from first principles the finite-temperature properties-linewidths, line shifts, and lifetimes-of the key vibrational modes that dominate inelastic losses in graphitic materials. In graphite, the phonon linewidth of the Raman-active E(2g) mode is found to decrease with temperature; such anomalous behavior is driven entirely by electron-phonon interactions, and does not appear in the nearly degenerate infrared-active E(1u) mode. In graphene, the phonon anharmonic lifetimes and decay channels of the A(1)' mode at K dominate over E(2g) at Gamma and couple strongly with acoustic phonons, highlighting how ballistic transport in carbon-based interconnects requires careful engineering of phonon decays and thermalization.     

Structural and spectral properties of SnO2 nanocrystal prepared by microemulsion technique

Extrafine SnO₂ nanocrystals as small as 2.4 nm were synthesized by the microemulsion method. The grain sizes and crystallization process were measured and investigated by X-ray diffraction. Two growth processes were proposed, and the activation energies of 4.3 and 23 KJ/mol were obtained for respective low-and fast-growth processes. TEM micrographs and the selected-area diffraction recorded their morphology and crystallization, well crystallized at about 773 K. All the IR modes measured by FT-IR spectrometer were assigned. The 616 cm^-1 mode after annealing at 673 K showed fine crystallization. The temperature dependence of the Raman spectra shows that increase in intensity and decrease in linewidth of the 636 cm^-1 mode with the increasing grain size indicate a phonon confinement effect. A new 330 cm^-1 Raman mode originally inactive in bulk, was observed in the SnO₂ nanocrystal by size effect. A low frequency mode at 76 cm^-1 shifts to 38 cm^-1 as the temperature goes up 873 K, which can be characterized to determine the SnO₂ grain sizes. PACS 61.46.+w; 61.10.-i; 78.30.-j; 81.20.-n     

Ba_(1-x)Sr_xTiO_3相结构的拉曼光谱研究

本文测定了不同Sr含量的钛酸锶钡(Ba1-xSrxTiO3)纳米晶的拉曼光谱,发现了随着Sr含量的增加,517cm-1[E(TO)与A1(TO)]光学声子模劈裂为双峰和相对低频声子模向低频漂移,而相对高频声子模向高频漂移现象。当x=0.4时,软模解冻,Ba1-xSrxTiO3铁电相不能维持而呈现顺电相结构。     

双层石墨烯位于1800—2150cm~(-1)频率范围内的和频拉曼模

文章利用拉曼光谱研究了双层石墨烯在1800—2150 cm-1范围内的和频拉曼模.基于双共振拉曼散射理论,利用多波长激光拉曼散射结合声子色散曲线分别从实验上和理论上分析发现,双层石墨烯在此频率范围内主要存在4个拉曼模,它们主要由LO和LA或iTA按不同共振散射方式所组成的4个和频模,而iTO和oTO参与和频的可能性很小.文章澄清了学术界在1800—2150 cm-1频率范围内和频模的解释,有助于进一步深入理解多层石墨烯在此范围内的和频模.     

Resonant Raman scattering from CdTe/ZnTe self-assembled quantum dot structures

We report resonant Raman scattering results of CdTe/ZnTe self-assembled quantum dot (QD) structures. Photoluminescence spectra reveal that the band gap energies of the CdTe QDs decrease with the increase of CdTe thickness from 2.0 to 3.5 monolayers, which indicates that the size of the QDs increases. When the CdTe/ZnTe QD structures are excited by non-resonant excitation, a longitudinal optical (LO) phonon response from the ZnTe barrier material is observed at 206 cm⁻¹. In contrast, when the CdTe/ZnTe QD structures are resonantly excited near the band gap energy of the QDs, additional phonon modes emerge at 167 and 200 cm⁻¹, while the ZnTe LO phonon response completely disappears. The 167 cm⁻¹ mode corresponds to the LO phonon of the CdTe QDs. A spatially resolved Raman scattering from the cleaved edge of the QD sample reveals that the 200 cm⁻¹ mode is strongly localized at the interface between the CdTe QDs and ZnTe cap layer. This phonon mode is attributed to the interface optical (IO) phonon. The analytically calculated value of the IO phonon energy using a dielectric continuum approach, assuming a spherical dot boundary, agrees well with the experimental value.