基于铁磁金属纳米点接触结构的全金属逻辑电路

电流在铁磁金属中可以用来驱动磁畴壁,从而可以进行信息的读写。然而,具体如何在器件中实现并不清楚。文章作者利用纳米加工技术制作出铁磁金属纳米点接触结构和逻辑电路,并对纳米结构中畴壁的输运性质和逻辑电路特性进行了研究。发现了铁磁纳米点接触结构在电流驱动下存在的高阻态及低阻态,通过设计不同形状的点接触结构,用电学测量方法验证了畴壁在自旋极化电流作用下的移动方向与电流方向的关系。并基于电流控制点接触电阻变化的结果,制作出能够实现逻辑＂非＂功能的全金属逻辑电路,实现了电路的电信号驱动和利用电信号的检测功能。     

消磁场对纳米铁磁线磁畴壁动力学行为的影响

为了实现基于磁畴壁运动的自旋电子学装置, 掌握磁畴壁动力学行为是重要争论之一.研究了在外磁场驱动下L-型纳米铁磁线磁畴壁的动力学行为. 通过微磁学模拟,在各种外磁场的驱动下考察了纳米铁磁线磁畴壁的动力学特性; 在较强外磁场的驱动下, 在不同厚度纳米线上考察了纳米线表面消磁场对磁畴壁动力学行为的影响. 为了进一步证实消磁场对磁畴壁动力学的影响, 在垂直于纳米线表面的外磁场辅助下分析了磁畴壁的动力学行为变化. 结果表明, 随着纳米线厚度和外驱动磁场强度的增加, 增强了纳米线表面的消磁场的形成, 使得磁畴壁内部自旋结构发生周期性变化, 导致磁畴壁在纳米线上传播时出现Walker崩溃现象. 在垂直于纳米线表面的外磁场辅助下, 发现辅助磁场可以调节消磁场的强度和方向. 这意味着利用辅助磁场可以有效地控制纳米铁磁线磁畴壁的动力学行为.     

磁畴壁拓扑结构研究进展

拓扑磁性斯格明子作为信息载体单元具备高可靠性、高集成度、低能耗等优势,有望提高数据读写精度、降低功耗,从而研发新型拓扑自旋电子学材料与原理型器件,为信息技术、5G通信和大数据等的高速发展提供材料与技术支持.但磁性斯格明子同时存在需要磁场稳定以及电流驱动下斯格明子霍尔效应引起偏转等缺点,严重阻碍了其在实际器件中的应用,因此探索新型拓扑磁畴结构和适宜应用的材料体系成为研究的关键.本文将重点介绍自2013年理论预言磁畴壁斯格明子以来,利用高分辨率洛伦兹透射电子显微镜原位实空间发现并研究磁畴壁拓扑麦纫和磁畴壁斯格明子的实验工作.首次在范德瓦耳斯Fe_5–xGeTe₂二维磁性材料中发现温度诱发的180°磁畴壁转变为拓扑麦韧链,研究了磁畴壁麦纫态在外界电场、磁场作用下的集体运动行为,揭示了基于自旋重取向、磁畴壁限域效应以及弱相互作用下生成磁畴壁拓扑态的机制.在该机制指导下,设计制备了具有自旋重取向的GdFeCo非晶亚铁磁薄膜,不仅获得了磁畴壁麦纫,验证了生成机制的普适性,还成功实现了畴壁麦韧对到畴壁斯格明子的可逆拓扑转变,开辟了基于磁畴壁等内禀限域效应开展...     

二维伊辛模型的畴壁动力学

表面可以改变纳米磁性薄膜的结构和相变温度,畴壁动力学由此成为研究的重点.本文采用动力学蒙特卡罗模拟方法,对二维Ising模型磁畴界面的非平衡动力学展开数值研究.系统初态设为半正半负,即由完全有序但自旋取向完全相反的两部分组成,其间的磁畴壁随时间生长.通过对磁化标度形式的分析,发现畴壁内外的动力学标度形式虽然相同,但临界...     

磁性材料的磁结构、磁畴结构和拓扑磁结构

首先简要地介绍了磁性材料中磁结构、磁畴结构和拓扑磁结构以及相互之间的关系. 一方面, 磁畴结构由材料的磁结构、内禀磁性和微结构因素决定; 另一方面, 磁畴结构决定了材料磁化和退磁化过程以及技术磁性. 拓扑学与材料物理、材料性能的联系越来越紧密. 最近的研究兴趣集中在一些拓扑磁性组态, 如涡旋、磁泡、麦纫、斯格米子等. 研究发现这些拓扑磁结构的拓扑性质与磁性能密切相关. 然后从尺寸效应、缺陷、晶界三个方面介绍国际学术界在磁结构、磁畴结构和拓扑磁结构方面的进展. 最后介绍了在稀土永磁薄膜材料的微观结构、磁畴结构和磁性能关系、交换耦合纳米盘中的拓扑磁结构及其动力学行为方面的工作. 通过对文献的评述, 得到以下结论: 开展各向异性纳米复合稀土永磁材料的研究对更好地利用稀土资源具有重要的意义. 可以有目的地改变材料的微结构, 可控地进行磁性材料的磁畴工程, 最终获得优秀的磁性能. 拓扑学的概念正在应用于越来越多的学科领域, 在越来越多的材料中发现拓扑学的贡献. 研究磁畴结构、拓扑磁性基态或者激发态的形成规律以及动力学行为对理解量子拓扑相变以及其他与拓扑相关的物理效应是十分重要的. 也会帮助理解不同拓扑学态之间相互作用的物理机制及其与磁性能之间的关系, 同时拓展拓扑学在新型磁性材料中的应用.     

电学方法调控磁化翻转和磁畴壁运动的研究进展

电学方法调控磁性材料及器件的磁性是当前自旋电子学研究的热点之一.本综述简要介绍利用电学方法调控磁化翻转和磁畴壁运动的研究进展.首先简述了自旋极化电流的产生、自旋流与局域磁矩之间的作用原理以及对应的Landau-Lifshitz-Gilbert-Slonczewski磁动力学方程;然后分别讨论了单层磁性材料、铁磁层/重金属、铁磁层/非磁金属/铁磁层等不同结构中的电流诱导磁化翻转或驱动畴壁运动;最后介绍了利用压电效应、磁电耦合效应和栅极电场效应三种电压方式对磁矩的调控.在此基础上,对电学方法调控磁化翻转和磁畴壁运动进行了总结和展望.     

微磁动力学的新进展

本文介绍微磁动力学领域的一个最新进展,我们的研究发现在磁场驱动下且保持畴结构不变地沿着纳米磁线运动的磁畴壁,其运动源于能量耗散,磁畴壁运动速度正比于能量耗散率。与此同时,我们根据能量守恒原则,给出了磁畴壁速度的一个合理定义,该定义适用于任意的磁畴壁结构。在此定义下,即使磁畴壁没有做刚性运动,我们也能得到磁畴壁运动的瞬时速度和平均速度。我们的结果不仅能重复低磁场下的沃克（Walker）解,还能反映出当磁场高于沃克极限（Walker limit）时速度{磁场的依赖关系,该结果跟数值模拟和实验数据都符合得很好。我们根据微磁动力学研究的这一新进展,最终澄清了一个事实即“磁畴壁质量”这个概念是错误的。     

二维伊辛模型的畴壁动力学

表面可以改变纳米磁性薄膜的结构和相变温度，畴壁动力学由此成为研究的重点。本文采用动力学蒙特卡罗模拟方法，对二维Ising模型磁畴界面的非平衡动力学展开数值研究。系统初态设为半正半负，即由完全有序但自旋取向完全相反的两部分组成，其间的磁畴壁随时间生长。通过对磁化标度形式的分析，发现畴壁内外的动力学标度形式虽然相同，但临界指数在数值上却存在很大差异，相差一个 =1，这是由初始条件导致的。     

末端形状对NiFe纳米薄膜磁反转动力学特性的影响

基于微磁学模拟方法研究末端形状对NiFe纳米薄膜的磁反转和自旋波本征动力学特性的调制及磁反转与自旋波模式软化间的内在联系.纳米薄膜微磁结构的相变总是伴随着某种自旋波模式的软化,软化自旋波模式空间分布预示微磁结构相变的路径.存在一临界裁剪度（h₀）.当裁剪度h<h₀时,磁振荡局域于末端边缘的EM自旋波软化诱导磁反转从磁体末端边缘磁矩失稳开始,边缘失稳区域向中央扩展形成反转畴,最后反转畴逐渐移出膜面外而实现反转.当h≥h₀时,形状各向异性导致边缘局域化模式自旋波被抑制,反转场附近一致模式自旋波的软化诱导磁体一致反转.     

基于金刚石NV色心的纳米尺度磁场测量和成像技术

纳米级分辨率的磁场测量和成像是磁学中的一种重要研究手段.金刚石中的单个氮-空位点缺陷电子自旋作为一种量子传感器,具有灵敏度高、原子级别尺寸、可工作在室温等诸多优势,灵敏度可以达到单核自旋级别,空间分辨率达到亚纳米.将这种磁测量技术与扫描成像技术结合,能够实现高灵敏度和高分辨率的磁场成像,定量地重构出杂散场.这种新型的磁成像技术可以给出磁学中多种重要的研究对象如磁畴壁、反铁磁序、磁性斯格明子的结构信息.随着技术的发展,基于氮-空位点缺陷的磁成像技术有望成为磁性材料研究的重要手段.     

Domain wall motion by the magnonic spin Seebeck effect

The recently discovered spin Seebeck effect refers to a spin current induced by a temperature gradient in a ferromagnetic material. It combines spin degrees of freedom with caloric properties, opening the door for the invention of new, spin caloritronic devices. Using spin model simulations as well as an innovative, multiscale micromagnetic framework we show that magnonic spin currents caused by temperature gradients lead to spin transfer torque effects, which can drag a domain wall in a ferromagnetic nanostructure towards the hotter part of the wire. This effect opens new perspectives for the control and manipulation of domain structures.     

Investigation of magnetization reversal process in pinned CoFeB thin film by in-situ Lorentz TEM

Exchange bias effect has been widely employed for various magnetic devices.The experimentally reported magnitude of exchange bias field is often smaller than that predicted theoretically,which is considered to be due to the partly pinned spins of ferromagnetic layer by antiferromagnetic layer.However,mapping the distribution of pinned spins is challenging.In this work,we directly image the reverse domain nucleation and domain wall movement process in the exchange biased Co Fe B/Ir Mn bilayers by Lorentz transmission electron microscopy.From the in-situ experiments,we obtain the distribution mapping of the pinning strength,showing that only 1/6 of the ferromagnetic layer at the interface is strongly pinned by the antiferromagnetic layer.Our results prove the existence of an inhomogeneous pinning effect in exchange bias systems.     

Optical-controlled domain wall resistance in magnetic nanojunctions

Domain walls in ferromagnetic metals are known to be a source of resistance. In the present work resistance of a domain wall in a ferromagnetic nanojunction is investigated using the semiclassical approach. The analysis is based on the Boltzmann transport equation, within the relaxation time approximation. The one-dimensional Néel-type magnetic domain wall is considered and the effect of the electron-photon interaction on the resistance is studied. The results indicate that polarization and wavelength of the photon play a significant role in the magnetoresistance. The resistance of the nanojunction decreases as the wavelength of the photon increases. It is also shown that the domain wall resistance decreases by increasing the Fermi energy.     

Model of hybrid interfacial domain wall in ferromagnetic/antiferromagnetic bilayers

A general model of a hybrid interfacial domain wall(HIDW) in ferromagnetic/antiferromagnetic exchange biased bilayers is proposed, where an interfacial domain wall is allowed to extend into either the ferromagnetic or antiferromagnetic layer or across both. The proposition is based on our theoretical investigation on thickness and field dependences of ferromagnetic domain wall(FMDW) and antiferromagnetic domain wall(AFDW), respectively. Good match of the simulation to the hysteresis loops of a series of Ni Fe/Fe Mn exchange-biased bilayers confirms the existence of the HIDW, where the AFDW part is found to preferentially occupy the entire antiferromagnetic layer while the FMDW shrinks with the increased magnetic field as expected. The observed asymmetry between the ascending and descending branches of the hysteresis loop is explained naturally as a consequence of different partition ratios between AFDW and FMDW.     

Single domain wall dynamics in ferromagnetic lamination with variable conductivity

The influence of variable conductivity and thickness of two outer non-ferromagnetic layers on magnetization reversal of one central ferromagnetic layer is theoretically investigated. The model of a thin rigid 180°$180°$ domain wall moving transversely through the axially magnetized ferromagnetic layer is used to calculate induced eddy currents in lamination from which the domain wall mobility is determined. The effect of asymmetric distribution of eddy currents around moving domain wall results in acceleration of the wall near the edge of the lamination. The known domain wall mobility in ferromagnetic lamination can then be used to determine either the conductivity or the thickness of deposited outer non-ferromagnetic layers as proposed in discussion.     

Magnetocaloritronic nanomachines

We introduce and study a magnetocaloritronic circuit element based on a domain wall that can move under applied voltage, magnetic field and temperature gradient. We draw analogies between Carnot machines and possible devices employing such a circuit element. We propose a realization of magnetocaloritronic cooling and point out the parallels between the operational principles of magnetocaloritronic and thermoelectric cooling and power generation. Following this analogy, we introduce a magnetocaloritronic figure of merit that encodes information about the maximum efficiency of such devices. Even though the magnetocaloritronic figure of merit turns out to be very small for transition-metal based magnets, we speculate that larger numbers may be expected in ferromagnetic insulators.     

铁磁/反铁磁双层膜系统中的磁畴动力学行为

比较了铁磁单层膜与铁磁/反铁磁双层膜结构中的磁畴演化行为, 发现由于反铁磁层膜对铁磁层膜的耦合作用使得系统的磁畴壁厚度、 磁畴壁等效质量、磁畴壁移动速度等发生了改变, 系统的矫顽场增强, 并出现了交换偏置场. 文章具体研究了反铁磁层耦合作用下其磁畴壁厚度、 等效质量以及磁畴壁移动速度等与反铁磁层的净磁化、 磁各向异性、界面耦合强度以及温度等的关系; 并研究了其对铁磁/反铁磁双层膜中的交换偏置场、矫顽场的影响. 进而 从磁畴结构的形成及其演化上揭示了铁磁/反铁磁双 层膜中出现交换偏置以及矫顽场增加的物理机制.     

Interaction of a shear wave with a moving domain wall in a ferromagnetic crystal with allowance for the external magnetic field

The boundary-value problem of the magnetoelastic wave interaction with a moving domain wall in a ferromagnetic crystal is solved in the nonexchange magnetostatic approximation with allowance for the external magnetic field. It is shown that the difference introduced by magnetic field between the ferromagnetic resonance frequencies of the domains does not cause any noticeably departure of the refraction characteristics of reflected and transmitted waves from those observed at zero frequency mismatch. By contrast, the magnitudes of the transmission and reflection coefficients strongly depend on the external magnetic field and on the mobility of the domain wall. The dependence of the magnitude of the reflection coefficient on the external magnetic field at a fixed angle of shear wave incidence is found to possess two ferromagnetic resonance peaks. The positions and heights of the peaks may vary depending on the mobility of the domain wall.     

Mechanically driven domain wall movement in magnetoelastic nanomagnets

Magnetic domain walls are fundamental objects arising in ferromagnetic materials, largely investigated both through micromagnetic simulations and experiments. While current- and field-based techniques for inducing domain wall propagation have been widely studied for fundamental understanding and application-oriented purposes, the possibility to manipulate domain walls using mechanical stress in magnetoelastic materials has only recently drawn interest. Here, a complete analytical model describing stress-induced transverse domain wall movement in ferromagnetic nanostripe with variable cross-section is presented. This approach yields a nonlinear integro-differential equation describing the magnetization field. Its numerical implementation, based on the nonlinear relaxation method, demonstrates the possibility to precisely control the position of a domain wall through mechanical action.