6H-SiC(0001)表面graphene逐层生长的分子动力学研究

利用经典分子动力学方法和模拟退火技术分析研究了6H-ＳiC（0001）表面graphene的逐层生长过程及其形貌结构特点．研究表明,经过高温蒸发表面硅原子后,6H-ＳiC（0001）表面的碳原子能够通过自组织过程生成稳定的局部单原子层graphene结构．这种过程类似于6H-ＳiC（0001）表面graphene的形成,其生长和结构形貌演化主要取决于退火温度和表面碳原子的覆盖程度． 研究发现,当退火温度高于1400K时,6H-ＳiC（0001）表面碳原子能形成局部的单原子层graphene结构．这一转变温 关键词： graphene 碳化硅 分子动力学     

硅纳米颗粒在碳纳米管表面生长的分子动力学模拟

采用分子动力学模拟方法研究了硅纳米颗粒在碳纳米管上的生长，并分析了这种复合材料的基本结构.研究表明，由于硅原子和碳纳米管之间的相互作用以及碳纳米管的巨大的表面曲率，硅原子在碳纳米管表面不是形成覆盖碳纳米管的二维薄膜，而是生成具有三维结构的硅纳米颗粒.小纳米颗粒的结构和无基底条件下生成的颗粒结构基本一致.对于大纳米颗粒，不同于无基底条件下形成的球状纳米晶体硅结构，硅纳米颗粒沿管轴方向伸长，其结构为类似于硅晶体的无定形网络结构. 关键词： 纳米颗粒 碳纳米管 硅 分子动力学模拟     

密度泛函理论研究H2与Rhn（n=1—8）团簇的相互作用

采用密度泛函理论对H₂与Rh_n（n=1—8）团簇的相互作用进行了系统研究.结果表明, Rh_nH₂体系的最低能量结构是在Rh_n团簇最低能量结构的基础上吸附H原子生长而成.吸附H原子没有改变Rh_n团簇的结构, 键长是影响Rh_n和Rh_nH₂磁矩的主要因素.从优化后的几何结构可以看出吸附后的H₂发生断键,表明H₂分子发生了解离性吸附.当n≤5,H原子的吸附以桥位为主,当n≥6时,H原子开始出现空位吸附.H原子的吸附提高了Rh_n的稳定性和化学活性,较小的吸附能表明H原子易从Rh_nH₂中解离出来.二阶能量差分表明4是Rh_nH₂和Rh_n团簇的幻数. 关键词： nH₂和Rh_n团簇')" href="#">Rh_nH₂和Rh_n团簇 平衡结构 电子性质     

小尺寸铜团簇冷却与并合过程中结构变化的原子尺度研究

研究Cu_N（N=57,58,59）熔融铜团簇在冷却过程以及300 K时两个具有二十面体结构Cu₅₅团簇在并合过程中的结构变化.对这些小尺寸团簇的结构变化采用基于嵌入原子方法的正则系综分子动力学进行计算机模拟.通过对模拟结果的分析表明,小团簇的冷却和并合过程存在阶段变化的特点.降温过程中Cu_N（N=57,58,59）团簇的原子运动及其微观结构变化表现出较大差异,由此导致这三类团簇内原子排布的不同,其中Cu₅₉团簇结构的有序程度最低.在两个Cu₅₅团簇并合早期阶段,这两个团簇相接触后发生变形导致原子位置出现较大改变,在随后的并合过程中,原子扩散引起原子局部位置调整导致所并合体系的结构发生变化.远离两个团簇接触区的原子仍保持其并合前的结构. 关键词： 团簇 分子动力学 计算机模拟 表面     

Eu掺杂TbMnO3多晶材料的介电性质

采用固相反应法制备了Tb_0.8Eu_0.2MnO₃多晶材料.对样品的X射线衍射（XRD）分析表明Eu³⁺固溶于TbMnO₃中.测量了样品在低温(100 K ≤T≤ 300 K)和低频下(200 Hz≤f≤100 kHz)的复介电性质.在此温度区间内发现了两个介电弛豫峰.经分析认为低温峰（T≈170 K）起源于局域载流子漂移引起的偶极子极化效应,而高温峰（T≈290 K）则是由离子电导产生的边界和界面层的电容效应引起的.电阻率的测量显示在低温下（T≈230 K）存在明显的导电机制转变. 关键词： 多铁性材料 掺杂 介电性质     

La1-xCaxMnO3(x≤1/3)中Ca掺杂的团簇化及其稳定性

运用原子模拟技术考察了La_1-xCa_xMnO₃(x≤1/3)中Ca的分布,发现低温下掺杂的Ca离子倾向于团簇化分布,形成纳米尺度的团簇.对加压和温度下团簇的稳定性也进行了研究,发现这种团簇在3 GPa和120 K下是稳定的.这种化学相分离可能是造成La_1-xCa_xMnO₃中结构和电磁性质不均匀的原因之一. 关键词： 原子模拟技术 锰氧化物 团簇 相分离     

La2-xNdxCuO4+δ(0.1≤x≤1.2)体系中滞弹性弛豫与相变内耗研究

通过对La_2-xNd_xCuO_4+δ(0.1≤x≤1.2)体系中滞弹性弛豫与相变内耗性能的研究发现,当0.1≤x≤1.0时,在250K左右存在一个与间隙氧有关的弛豫内耗峰,并且当0.1≤x≤0.4时,弛豫内耗峰峰高随着x值的增大而升高,此时体系为正交结构;当0.5≤x≤1.0时,体系在宏观上呈现四方结构,此时内耗峰峰高随着x< 关键词： 2-xNd_<i>xCuO_4+δ')" href="#">La_2-xNd_<i>xCuO_4+δ 间隙氧 弛豫内耗峰 相变内耗峰     

碳硅链和氮铝链的电子输运特性的第一性原理研究

采用第一性原理非平衡格林函数方法研究了一维碳硅链 （SiC）_n和氮铝（Al-N）_n的电子输运特性,n为原子链所包含的Si,C（Al,N）原子数目.碳硅链（SiC）_n（或氮铝链（Al-N）_n）置于两个Al（100）电极中.计算了一维碳硅链和氮铝链体系的平衡电导随原子链的长度变化情况.结果发现,它们的平衡电导随原子链的长度增加而减小.对电荷转移分析发现, 关键词： 平衡电导 分子开关 转移电荷     

电子型掺杂高温超导体La2-xCexCuO4飞秒时间分辨动力学研究

利用飞秒时间分辨光抽运探测技术研究了电子型掺杂La_2-xCe_xCuO₄(LCCO)高温超导材料的准粒子超快动力学过程.得到低温(T<0.7T_c)、转变温度附近(0.7T_c≤T≤T_c)和高温(T>T_c)三个温区内的动力学行为.研究发 关键词： 电子型掺杂高温超导体 飞秒时间分辨 准粒子 声子瓶颈     

不同冷速下SiGe纳米液滴快速凝固过程中的微观结构演变

采用分子动力学方法模拟了7种不同冷速下Si50Ge50纳米液滴快速凝固过程,利用双体分布函数、原子平均能量、最大标准团簇分析法、键角分布函数、二面角分布及可视化方法等对体系微观结构的演变进行了分析。研究结果表明: 当冷速R≥1×1010 K/s时,系统形成非晶态结构; R≤5×109 K/s时,系统形成以闪锌矿和纤锌矿结构相互嵌套的近似球形的纳米晶体,且纳米液滴起始结晶温度随冷速降低而降低。     

Modification of the electronic structure of graphene by intercalation of iron and silicon atoms

The ab initio calculations of the electronic structure of low-dimensional graphene–iron–nickel and graphene–silicon–iron systems were carried out using the density functional theory. For the graphene–Fe–Ni(111) system, band structures for different spin projections and total densities of valence electrons are determined. The energy position of the Dirac cone caused by the p _z states of graphene depends weakly on the number of iron layers intercalated into the interlayer gap between nickel and graphene. For the graphene–Si–Fe(111) system, the most advantageous positions of silicon atoms on iron are determined. The intercalation of silicon under graphene leads to a sharp decrease in the interaction of carbon atoms with the substrate and largely restores the electronic properties of free graphene.

     

Kinetics of silicon interaction with textured tantalum ribbons

The kinetics of silicon interaction with textured tantalum ribbons having a predominantly (100)-oriented surface has been studied by Auger electron spectroscopy. For T<700 K, silicon builds up on the surface. Within the 900<T<1000-K interval, after the formation of a monolayer coating, the excess silicon enters into layer-by-layer growth of the silicide TaSi₂. Within 1150<T<1320 K, this excess silicon reacts with tantalum to produce in a layer-by-layer manner the Ta₅Si₃ silicide; this compound is unstable and decomposes for T>1320 K to form Ta ₄Si, with only one third of the original silicon monolayer being left on the surface. The activation energy of Ta₅Si₃ decomposition is 4.3±0.2 eV. The activation energy of Si thermal desorption at low coverages is 5.4±0.2 eV. Fiz. Tverd. Tela (St. Petersburg) 39, 1484–1490 (August 1997)     

Computer study of the physical properties of a copper film on a heated graphene surface

The structural, kinetic, and mechanical properties of a copper film deposited on single-layer and two-layer graphenes have been studied in a molecular-dynamics model in the temperature range 300 K ≤ T ≤ 3300 K. The film sizes are reduced in the “zigzag” direction more slowly than in the “armchair” direction. The differences have been found to appear in the behavior of copper atoms on single-layer and two-layer graphenes with increasing temperature. Copper atoms on the two-layer graphene have higher horizontal mobility over entire temperature range. However, Cu atoms on the single-layer graphene become more mobile in the vertical direction beginning from a temperature of ～1500 K. The stress tensor components of the copper film characterizing the action of forces on the horizontal areas have a sharp extremum at T = 1800 K in the case of the single-layer graphene and are characterized by quite smooth behavior in the case of the two-layer graphene.     

Hydrogen on hybrid MoS2/graphene nanostructures

Transition metal dichalcogenides are rising candidates for the replacement of Pt catalysts in water splitting. In this theoretical study we focus on the hydrogen evolution reaction part of this process and on how hydrogen (H) interacts with MoS₂ nanostructures, free‐standing or positioned on a graphene substrate. Density functional theory calculations confirm the stability of such nanostructures and our results for H on several configurations, from 2D infinite monolayers to quasi‐1D MoS₂ ribbons and quasi‐0D MoS₂ flakes, are presented. We calculate the adsorption energy of H atoms on various sites of the MoS₂ nanostructures, notably at Mo and S active edges. Comparing free‐standing and MoS₂/graphene hybrid systems we find that the effect of the support on the adsorption of H on MoS₂ nanostructures is quite significant when the substrate induces strain. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Computer simulation of thin nickel films on single-layer graphene

The energy, mechanical, and transport properties of nickel films on a single-layer graphene sheet in the temperature range 300 K ≤ T ≤ 3300 K have been investigated using the molecular dynamics method. The stresses generated in the plane of the metallic film are significantly enhanced upon deposition of another nickel film on the reverse side of the graphene sheet. In this case, the self-diffusion coefficient in the film plane above 1800 K, in contrast, decreases. An appreciable temperature elongation per unit length of the film also occurs above 1800 K and dominates in the “zigzag” direction of the graphene sheet. The vibrational spectra of the nickel films on single-layer graphene for horizontal and vertical displacements of the Ni atoms have very different shapes.     

First principles calculations of armchair graphene nanoribbons interacting with Cu atoms

We have investigated the electronic properties of bare, H-terminated, Cu-terminated and Cu-doped armchair graphene nanoribbons (AGNRs) using ab-initio approach. We found that H-termination enhances the stability and band gap whereas H extraction introduces dangling bands and lowers the band gap making bare ribbons indirect band gap semiconductors. The calculations revealed that strong hybridization between Cu atoms and AGNRs, lessen the band gap for Cu-terminated ribbons and gives rise to metallicity in Cu-doped AGNRs irrespective of their widths. Formation energy of considered ribbons yield that H-terminated AGNRs with lowest formation energy are most energetically favored, next are one edge Cu-terminated ribbons followed by bare ones whereas both edges Cu-doped ribbons are least energetically plausible. We predict that presence of Cu atoms in GNRs, significantly alter the band gap and can be used in band gap engineering of nanoribbons.     

Simulation of silicon nanoparticles stabilized by hydrogen at high temperatures

The stability of different silicon nanoparticles are investigated at a high temperature. The temperature dependence of the physicochemical properties of 60- and 73-atom silicon nanoparticles are investigated using the molecular dynamics method. The 73-atom particles have a crystal structure, a random atomic packing, and a packing formed by inserting a 13-atom icosahedron into a 60-atom fullerene. They are surrounded by a “coat” from 60 atoms of hydrogen. The nanoassembled particle at the presence of a hydrogen “coat” has the most stable number (close to four) of Si–Si bonds per atom. The structure and kinetic properties of a hollow single-layer fullerene-structured Si₆₀ cluster are considered in the temperature range 10 K ≤ T ≤ 1760 K. Five series of calculations are conducted, with a simulation of several media inside and outside the Si₆₀ cluster, specifically, the vacuum and interior spaces filled with 30 and 60 hydrogen atoms with and without the exterior hydrogen environment of 60 atoms. Fullerene surrounded by a hydrogen “coat” and containing 60 hydrogen atoms in the interior space has a higher stability. Such cluster has smaller self-diffusion coefficients at high temperatures. The fullerene stabilized with hydrogen is stable to the formation of linear atomic chains up to the temperatures 270-280 K.     

Intercalation of graphene on iridium with samarium atoms

Intercalation of graphene on Ir (111) with Sm atoms is studied by methods of thermal desorption spectroscopy and thermionic emission. It is shown that adsorption of samarium at T = 300 K on graphene to concentrations of N ≤ 6 × 10¹⁴ atoms cm^–2 followed by heating of the substrate leads to practically complete escape of adsorbate underneath the graphene layer. At N > 6 × 10¹⁴ atoms cm^–2 and increasing temperature, a fraction of adsorbate remains on graphene in the form of two-dimensional “gas” and samarium islands and are desorbed in the range of temperatures of 1000–1200 K. Samarium remaining under the graphene is desorbed from the surface in the temperature range 1200–2150 K. Model conceptions for the samarium–graphene–iridium system in a wide temperature range are developed.     

Stability of two-dimensional nanostructures

We investigate atomic and molecular nanostructures on metal surfaces by variable low-temperature scanning tunnelling microscopy. In combination with molecular dynamics calculations we achieve a detailed understanding of the stability of these structures.?Atomic nanostructures in homoepitaxial metallic systems are thermodynamically only metastable. Two-dimensional islands on Ag(110) decay above a threshold temperature of T _l=175 K. Caused by the anisotropy of the surface, distinct decay behaviours exist above and below a critical temperature of T _c=220 K. Calculations based on effective medium potentials of the underlying rate limiting atomic processes allow us to identify the one-dimensional decay below T _c as well as the two-dimensional decay above T _c.?In contrast to atoms, the intermolecular electrostatic interaction of polar molecules leads to thermodynamically stable structures. On the reconstructed Au(111) surface, the pseudo-chiral 1-nitronaphthalin forms two-dimensional supermolecular clusters consisting predominantly of ten molecules. Comparison of images with submolecular resolution to local density calculations elucidates the thermodynamical stability as well as the internal structure of the decamers. Received: 25 March 1999 / Accepted: 17 August 1999 / Published online: 6 October 1999     

Time-Dependent Resonant Tunneling in a Double-Barrier Diode Structure

The elastic moduli of bilayer graphene nanomeshes, i.e., nanomeshes of bilayer graphene, where layers at the edges of “closed” holes are coupled to each other by a continuous network of sp²-hybridized atoms, have been calculated by ab initio methods. Structures with different configurations of holes in layers with AA, AB, and 30° stackings have been studied. It has been shown that the ultimate tensile strength of the nanomeshes under consideration is higher than that of graphene nanostructures and is comparable with the ultimate tensile strength of bilayer graphene and single-layer carbon nanotubes. A possible application of such strong nanomeshes as nanocontainers for hydrogen storage and other compressed gases has been also discussed.