溶胶—凝胶法制备CdS微晶掺杂TiO2／SiO2薄膜及其非线性光学特性

采用溶胶－凝胶方法在普通的载玻片上制备了ＣｄＳ微晶掺杂的ＴｉＯ２／ＳｉＯ２复合薄膜。用正硅酸乙酯、钛酸丁酯、醋酸镉作原料，比较了两种硫化剂：硫尿和硫代乙酰氨的硫化作用。Ｘ射线衍射谱和拉曼光谱揭示了ＣｄＳ微晶镶嵌在ＴｉＯ２／ＳｉＯ２薄膜的玻璃网络中。不同热处理温度、不同热处理时间的吸收光谱表明薄膜中存在着量子尺寸效应。采用Ｚ扫描技术测量了薄膜的非线性吸收及非线性折射率ｎ２＝－４．６７×１０－７ｅｓｕ。     

纳米(Y0.95Eu0.05)2O3及其SiO2气凝胶介孔组装体的制备与光致发光

采用尿素溶胶法合成（Ｙ０．９５Ｅｕ０．０５）２Ｏ３纳米粉,用超临界干燥技术制备了ｎ－（Ｙ０．９５Ｅｕ０．０５）２Ｏ３／ＳｉＯ２气凝胶介孔组装体。结果表明,当Ｙ＾３＋：Ｅｕ＾３＋＝２０：１,均相反应时间为４ｈ,且经６８０℃、４ｈ灼烧热处理后得到的ｎ－（Ｙ０．９５Ｅｕ０．０５）２Ｏ３中,光致发光强度最大（发光峰位于６１２ｎｍ）,以Ｓｉ与２Ｙ摩尔比为１：７的ｎ－（Ｙ０．９５Ｅｕ０．０５）２Ｏ３／ＳｉＯ２气凝胶介孔组装体,经同样条件热６１６ｎｍ）。对产生上述发光强度减弱和峰位红移现象进行讨论。     

用Z扫描方法测量掺C60有机改良介质的非线性折射率

用Ｚ扫描方法和波长１．０６４μｍ、脉宽１５０ｐｓ的锁模激光测定了Ｃ６０／ＮＨ２－（ＣＨ２）３－Ｓｉ（ＯＣ２Ｈ５）３（简称Ｃ６０／ＫＨ５５０）溶胶和凝胶的三阶光学非线性系数。理论拟合曲线计算得出，溶胶复合材料的非线性折射率ｎ２＝５．６×１０－１２ｅｓｕ，经两天凝结之后的凝胶复合材料的ｎ２＝６．２×１０－１２ｅｓｕ。在相同的激光强度下溶胶和凝胶的不同透过率归因于溶胶液体对激光的非线性散射。     

SnO2超微粒薄膜的界面电子转移研究

用ＰＥＣＶＤ方法制备了ＳｎＯ２超微粒薄膜,此薄膜表面吸附很多氧,而且人对醇敏感,测量不同醇（甲醇、乙醇、正丙醇、乙二醇）的敏感性质和对薄膜者红外光谱测量,发现薄膜表面化学吸附Ｏ２＾２－、Ｏ２＾－、Ｏ＾－成为敏感活性中心是电子转移的桥梁。建立了电子转移的模型：表面Ｏ２＾－主要夺取醇中的质子,Ｏ＾－主要与醇中β－Ｃ上的Ｈ（与α－ＣＯＨ反式共平面）作用。醇的最终产物是醛类。解释了ＳｎＯ２超微粒薄膜作为传     

溶胶-凝胶技术在光学制造中的应用

溶胶－凝胶技术是一种超结构材料处理技术，与浇铸工艺相结合形成了一种全新的光学制造技术。本文简要回顾和比较了基于溶胶－凝胶处理技术制造ＳｉＯ２单片光学元件和玻璃的多种处理方法，重点描述在常压下用水解硅醇盐方法制造ＳｉＯ２单片凝胶七个处理步骤的化学、物理过程。概述了这种方法的特点和制得光学元件的特性，列举和讨论其在制造折射、衍射、微型光学元件和复合系统中的应用及前景。     

Nd1-xSrxMnO3阴极材料的制备及性能研究

用溶胶－凝胶法制备了单相性、均匀性好的Ｎｄ１－ｘＳｒｘＭｎＯ３（ｘ＝０．１,０．２,０．３,０．４,０．５）微粉系列样品。通过Ｘ射线衍射分析表明,当０≤ｘ≤０．５时样品具有畸变的正交钙钛矿（ＣｄＦｅＯ３型）结构。考察样品的烧结特性和高温电导率随掺锶量的变化规律,发现ｘ＝０．２时样品的导电性能最好。对用微粉制备的膜电极过电位进行测试表明,Ｎｄ０．８Ｓｒ０．２ＭｎＯ３有极过电位低于Ｌａ０．７Ｓｒ０．３ＭｎＯ３阴极过电位。     

SiO2-GeO2薄膜二次谐波产生的稳定性研究

利用溶胶－凝胶（ｓｏｌ－ｇｅｌ）方法制备了ＳｉＯ２－ＧｅＯ２薄膜,并测量了薄样品电场极化后光学二次谐波信号的相对大小和时间弛以豫特性,通过对汪同衬底材料及不同温度下电场极化薄膜样品二次谐波信号的时间弛豫特性比较,表明薄膜与衬底之间界面电荷的稳定性受衬底材料体电导率的影响,从而影响了薄薄膜样品二次谐波信号的稳定性。     

SiO2—PEG溶胶的网络结构与分形特征

添加少量聚乙二醇（ＰＥＧ）于ＴＥＯＳ－Ｈ２Ｏ－Ｃ２Ｈ５ＯＨ－ＮＨ４ＯＨ溶胶体系中，可以改变ＳｉＯ２溶胶粒子的生长过程和网络结构的分形结构。通过小角Ｘ光散射，透射扫描电镜，激光粒度分布仪等手段对这一过程进行分析测试，同时探讨了ＰＥＧ对ＳｉＯ２溶胶－凝胶的修饰机理，有力地证明了分形行为的存在，着重研究了其分数维的变化规律，并提出ＰＥＧ在该溶胶中的作用模型。     

氢吸附对掺杂SnO2薄膜电子结构的影响

应用ＸＰＳ技术研究了掺杂ＳｎＯ２薄膜吸附Ｈ２前后电子结构的变化，观测到掺杂到Ｓｂ和Ｐｄ化学状态明显改变，发现掺杂剂Ｓｂ对ＳｎＯ２薄膜Ｆｅｍｉ能级的影响；同时，分析了掺杂Ｓｂ和Ｐｄ对ＳｎＯ２薄膜气敏特性的影响机制。     

金属醇盐水解法制备莫来石透明陶瓷薄膜的研究

采用市售正硅酸乙酯及自制异丙醇铝，通过基于金属醇盐水的溶胶－凝胶法，制备了ＳｉＯ２－Ａｌ２Ｏ３凝胶，并在远低下莫来石熔化温度下，烧制了透明基来石陶瓷薄膜，使用Ｘ射线衍射，红外吸收光谱及核磁共振等现代测试手段，研究了凝胶及其高温产物的晶型转变，振动光谱及铝离子的配位状态，揭示了其结构变化规律。     

Low-Loss NbTiN Films for THz SIS Mixer Tuning Circuits

Recent results at 1 THz using normal-metal tuning circuits have shown that SIS mixers can work well up to twice the gap frequency of the junction material (niobium). However, the performance at 1 THz is limited by the substantial loss in the normal metal films. For better performance superconducting films with a higher gap frequency than niobium and with low RF loss are needed. Niobium nitride has long been considered a good candidate material, but typical NbN films suffer from high RF loss. To circumvent this problem we are currently investigating the RF loss in NbTiN films, a 15K Tc compound superconductor, by incorporating them into quasi-optical slot antenna SIS devices.     

电子束蒸镀氧化铟透明导电薄膜

用电子束蒸发掺SnO2氧化铟靶,可以制得性能良好的透明导电薄膜,电阻率在2.5-3.5×10-4Ωcm,可见光透过率达90%.这种导电薄膜能代替SnO2透明导电薄膜,并优于SnO2导电薄膜. 本文着重研究了影响氧化铟透明导电薄膜导电性、透光性的主要因素,为获得性能良好的透明导电薄膜提供了重复性较好的工艺条件.]     

功率密度对中频磁控溅射制备 AZO薄膜性能的影向

利用中频磁控溅射法在普通玻璃衬底上沉积掺铝氧化锌(ZnO ∶ Al,简称AZO)薄膜,通过调整溅射功率密度参数得到沉积速率与功率密度之间的关系,制备了不同厚度的AZO薄膜.利用台阶仪、XRD、XPS、紫外可见分光光度计和Hall测试系统等方法研究了功率密度与厚度对AZO薄膜结构、组分、光学和电学性能的影响.实验结果表明...     

Luminescence properties of thin films prepared by laser ablation of Nd-doped potassium gadolinium tungstate

Optically active thin films on Si substrates have been produced by laser ablation of a Nd-doped potassium gadolinium tungstate (Nd:KGW) single crystal. Films grown at low oxygen pressures (<0.6 mbar) are potassium-deficient and appear to be mainly disordered. They show a poor photoluminescence (PL) performance that improves upon annealing in air at temperatures in the range 700–1000 °C. Films grown at high oxygen pressure (1 mbar) show instead good stoichiometry and the presence of a dominant textured gadolinium-tungstate phase compared to KGW. These films have low absorption, a refractive index close to that of bulk KGW and good PL performance, the emission lifetimes being longer (τ>150 μs) under certain conditions than those measured in the single-crystal material. Received: 25 July 2001 / Accepted: 26 July 2001 / Published online: 17 October 2001     

FeCoBSiO2磁性纳米颗粒膜的微波电磁特性

采用交替沉积磁控溅射工艺制备了超薄多层的FeCoBSiO2磁性纳米颗粒膜.利用x射线衍射仪、扫描探针显微镜、透射电子显微镜分析了薄膜的微结构和形貌特征.采用振动样品磁强计、四探针法、微波矢量分析仪及谐振腔法测量薄膜试样的磁电性能和微波复磁导率.重点对SiO2介质相含量、薄膜微结构对电磁性能产生重要影响的机理做了分析和探讨.结果 表明：这类FeCoBSiO2磁性纳米颗粒膜具有良好的软磁性能和高频电磁性能，2GHz时的 磁导率μ′高于70，可以应用于高频微磁器件或微波吸收材料的设计. 关键词： 磁性纳米颗粒膜 高频特性 复磁导率 磁控溅射     

基于聚噻吩/聚己内酯共混物的有机薄膜晶体管

选择聚3-己基噻吩(P3HT)/聚己内酯(PCL)双晶共混体系制备了不同配比的共混物有机薄膜晶体管。电学性能研究发现,随着共混物中P3HT含量降低,薄膜晶体管的场效应迁移率、开关电流比和阈值电压等性能缓慢降低。当P3HT质量分数为40%时,共混物薄膜仍具有较好的场效应性能,迁移率为0.008 cm²·V^-1·s^-1,开关电流比为5×10³,阈值电压为45.5 V。原子力显微镜测试结果表明:共混物成膜时发生明显的垂直相分离,在界面处形成连续的半导体层,有利于载流子传输。     

Carbon nanofibers and multiwalled carbon nanotubes from camphor and their field electron emission

Vertically aligned carbon nanofibers (CNF) and multiwalled carbon nanotubes (MWCN) have been synthesized from camphor by catalytic thermal CVD method on Co and Co/Fe thin films (for CNF) and on silicon substrates using a mixture of camphor and ferrocene (for MWCN). CNF and MWCN are studied by field emission scanning electron microscopy, high-resolution transmission electron microscopy, visible Raman spectroscopy, X-ray diffraction in order to get insight into the microstructure and morphology of these materials. Field electron emission study indicates turn-on field of about 2.56, 3.0 and 6.5 V/μm for MWCN, Co/CNF and Co/Fe/CNF films, respectively. The best performance of MWCN in field electron emission among the materials studied can be due to the highest aspect ratio, good graphitization and good density.     

脉冲溅射V2O5薄膜结构和性能研究

V2O5薄膜具有很好的离子注入/退出可逆性,是最有潜力的锂离子储存层的候选材料之一,它的电学特性与制备方法、化学计量比、结构和取向等有直接关系,仔细控制工艺参量是制备出在锂电池上应用的V2O5薄膜关键。研究中采用脉冲磁控反应溅射方法,通过精确地控制氧分压、基底温度等关键工艺参量,在石英玻璃和硅片上制备V2O5薄膜。利用X射线衍射和X射线光电子谱,分析了薄膜的成分、相结构、结晶和价态情况,用原子力显微镜表征了薄膜的微观结构,用分光光度计测量从200—2500nm波段V2O5薄膜纯度高、相结构单一、结晶度好。高低温电阻变化2个量级,薄膜的光学能隙为2.46eV。     

Surface roughness characterization of Al-doped zinc oxide thin films using rapid optical measurement

Transparent conductive oxide thin films have been widely investigated in photoelectric devices such as flat panel display (FPD) and solar cells. Al-doped zinc oxide (AZO) thin films have been widely employed in FPD. Measuring the surface roughness of AZO thin films is important before the manufacturing of photoelectric device using AZO thin films because surface roughness of AZO thin films will significantly affect the performance of photoelectric device. Traditional methods to measure surface roughness of AZO thin films are scanning electron microscopy and atomic force microscopy. The disadvantages of these approaches include long lead time and slow measurement speed. To solve this problem, an optical inspection system for rapid measurement of the surface roughness of AZO thin films is developed in this study. It is found that the incident angle of 60° is a good candidate to measure the surface roughness of AZO thin films. Based on the trend equation y=−3.6483x+2.1409, the surface roughness of AZO thin films (y) can be directly deduced from the peak power density (x) using the optical inspection system developed. The maximum measurement-error rate of the optical inspection system developed is less than 8.7%.The saving in inspection time of the surface roughness of AZO thin films is up to 83%.     

Mg based photocathodes for high brightness RF photoinjectors

Advanced high brightness radio frequency (RF) gun injectors require photocathodes with a fast response, high quantum efficiency (QE) and good surface uniformity. Metal films deposited by various techniques on the gun back wall could satisfy these requirements. A new deposition technique has been recently proposed, i.e. pulsed laser ablation. Several Mg samples have been deposited by this technique: the emission performance and morphological changes induced on the cathode surface during laser activation are compared and discussed.