磁控溅射制备Ta2O5／TiO2薄膜及其光学与电学性能的研究

用直流平面磁控溅射沉积薄膜的方法在Ｓｉ和玻璃基片上制备了Ｔａ２Ｏ５／ＴｉＯ２混合薄膜,薄膜的透射光谱研究结果表明,在ＴｉＯ２掺入浓度为０到１７％,薄膜的折射率从２．０８到２．２３。薄膜折射率与掺入ＴｉＯ２的浓度呈近线性关系。薄膜的ＭＯＳ电容器的Ｉ－Ｖ和Ｃ－Ｖ测量表明,经过退火处理能够提高Ｔａ２Ｏ５／ＴｉＯ２混合薄膜的介电常数。     

富勒烯在SiO_2与SiO_2－TiO_2凝胶中的掺入及光谱特性研究

本工作以ＳｉＯ_２和ＳｉＯ_２－ＴｉＯ_２凝胶体系为基质，选择合适的溶剂，采用特定的溶胶一凝胶工艺，成功地将纯的Ｃ_（６０）和Ｃ_（６０）／Ｃ_（７０）混合物分别均匀掺入上述基质中．研究了吸收与荧光光谱特性．室温下观测到峰置位于６６０ｎｍ附近的较强荧光带．对上述光谱性质作了初步的解释．     

PdCl_2/SiO_2和Pd-B/SiO_2非晶态合金催化剂的Raman光谱表征

采用共焦显微Ｒａｍａｎ光谱和Ｘ－射线衍射方法表征了负载型ＰｄＣｌ２／ＳｉＯ２和Ｐｄ－Ｂ／ＳｉＯ２非晶态合金催化剂的结构。结果表明ＰｄＣｌ２分散在ＳｉＯ２载体上后,与载体表面的相互作用使其在室温时即发生β→α构型转变。Ｐｄ－Ｂ／ＳｉＯ２非晶态合金的Ｒａｍａｎ光谱在３００－５００ｃｍ－１区域内呈现一大的弥散峰。与无负载Ｐｄ－Ｂ非晶态合金比较初步认定该弥散峰与Ｐｄ－Ｂ键振动有关,温度升高Ｐｄ－Ｂ／ＳｉＯ２催化活性下降,其主要原因为Ｐｄ－Ｂ／ＳｉＯ２非晶态合金在高温下逐渐晶化为Ｐｄ金属所致。ＰｄＣｌ２与ＳｉＯ２载体表面的相互作用使其具有较高的分散性,由此还原制备的Ｐｄ－Ｂ／ＳｉＯ２非晶态合金较之无负载Ｐｄ－Ｂ非晶态合金更加微细化,因而具有更大的活性比表面     

PdCl2／SiO2 Pd—B／SiO2非晶态合金催化剂的Ramman光谱表征

采用共焦显微Ｒａｍａｎ光谱和Ｘ－射线衍射方法表征了负载型ＰｄＣｌ２／ＳｉＯ２和Ｐｄ－Ｎ／ＳｉＯ２非晶态合金催化剂的结构。结果表明ＰｄＣｌ２分散在ＳｉＯ２载体上后,与载体表面的相互作用使其在室温时即发生β→α构型转变。Ｐｄ－Ｂ／ＳｉＯ２非晶态合金的ｒａｍａｎ光谱在３００－５００ｃｍ＾－１区域内呈现一大的弥散峰。与无负荷Ｐｄ－Ｂ非晶态合金比较初步认定该弥散峰与Ｐｄ－Ｂ键振动有关,温度升高Ｐｄ－Ｂ／Ｓｉ     

富勒烯在SiO2在SiO2—TiO2凝胶中的掺入及光谱特性研究

本工作以ＳｉＯ２－ＴｉＯ２凝胶体系为基质，选择合适的溶剂，采用特定的溶胶－凝胶工艺，成功地将纯的Ｃ６０和Ｃ６０／Ｃ７０混合物分别均匀掺入上述基质中，研究了吸收与荧光光谱特性，室温下观测到峰位置位于６６０ｎｍ附近的较强荧光带，对上光谱性质作了初步的解释。     

Cd_xHg_（1－x）Te／SiO_2固溶体微晶掺杂玻璃三阶非线性光学性质的

本文首次报道了对采用溶胶凝胶和原位生长工艺制备的Ｃｄ_ｘＨｇ_(１－ｘ)Ｔｅ／ＳｉＯ_２固溶体微品掺杂玻璃进行的三阶非线性光学性质实验研究及其结果。利用回返式简并四波混频技术，测得该固溶体掺杂玻璃的三阶非线性极化率的值为１０￣（－１２）ｅｓｕ量级。此结果比纯ＳｉＯ_２基体提高了２个数量级。表明该固溶体掺杂玻璃三阶非线性明显增强，在同样条件下，测得ＣＳ_２的三阶非线性极化率ｘ（３）为（１．７±０．２）×１０￣(－１２)ｅｓｕ，与国际上报道完全一致。     

SrBi2Ta2O9铁电薄膜微结构及其抗疲劳等铁电特性的研究

在低温Ｐｔ／Ｔｉ／ＳｉＯ２／Ｓｉ衬底上用脉冲准分子激光沉积技术结合氧气氛下７００℃退火获得高质量的ＳＢＴ薄膜，其择优取向为（００８）和（１１５）．薄膜厚度约为２００ｎｍ．铁电性能测试显示较饱和的、方形的电滞回线，其剩余极化和矫顽电场分别为１０μＣ／ｃｍ２和５７ｋＶ／ｃｍ，在１０１０次开关极化后没有显示任何疲劳，在５Ｖ直流电压下的漏电流密度约为４×１０－８Ａ／ｃｍ２，直流击穿电场约为２５０ｋＶ／ｃｍ．     

光催化剂SO2- 4/TiO2和TiO2 的光谱行为比较

用ＩＲ、Ｒａｍａｎ和ＤＲＳ光谱研究了ＳＯ＾２－４／ＴｉＯ２光催化剂和ＴｉＯ２光催化剂的光谱行为差别。结果表明,ＴｉＯ２光催化剂的表面只有Ｌ酸中心,而ＳＯ＾２－４／ＴｉＯ２光催化剂表面既有Ｌ酸中心也有Ｂ酸中心。ＴｉＯ２的硫酸化有效地抑制了晶相转变和晶粒度的增加。与ＴｉＯ２相比,ＳＯ＾２－４／ＴｉＯ２光催化剂的锐钛矿相含量较多、晶粒较小、光谱吸收边蓝移,从而增大了光吸收阈值,增强了光生空穴和电子的氧化     

YSZ／Si上溅射BSCCO超导膜的生长机理分析

本研究了利用ＹＳＺ（Ｙ稳定的ＺｒＯ２）缓冲层在Ｓｉ衬底上单靶偏轴溅射Ｂｉ－Ｓｒ－Ｃａ－Ｃｕ－Ｏ高温超导薄膜的工艺条件，给出了ＹＳＺ和ＢＳＣＣＯ薄膜的性能测试结果，并根据电镜分析结果，提出了ＢＳＣＣＯ薄膜的螺旋柱状生长机理。     

含TiO_2的R_2O－PbO－SiO_2系统玻璃化学稳定性的研究

本文通过以ＴｉＯ＿２取代部分ＰｂＯ的量，研究和讨论了ＴｉＯ＿２对Ｒ＿２Ｏ－ＰｂＯ－ＳｉＯ＿２系统玻璃化学稳定性的影响规律，并给出了在该系统中的ＴｉＯ＿２的最佳引入量。     

Electrosynthesis and characterization of CdSe thin films: Optimization of preparative parameters by photoelectrochemical technique

CdSe thin films have been electrodeposited potentiostatically onto stainless-steel and fluorine-doped tin oxide-coated glass substrates from an aqueous acidic bath using cadmium acetate ((CH₃COO)₂Cd·2H₂O) as a Cd ion source. Preparative parameters such as deposition potential, solution concentration, bath temperature, pH of the electrolytic bath and deposition time have been optimized by using photoelectrochemical (PEC) technique to obtain well adherent and uniform thin films. The electrodeposits were dark brown in colour. The films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques. XRD studies reveal that films are polycrystalline, with hexagonal crystal structure. SEM shows that the films are compact, with spherical grains. Optical absorption studies reveal that the material exhibits a direct optical transition having band gap energy ∼1.72 eV. PEC study shows that the films are photoactive.     

水热法制备TiO2薄膜的研究

采用水热法在玻璃基片上制备了TiO2薄膜.利用x射线衍射(XRD)、x射线光电子能谱(XPS)、扫描电子显微镜(SEM)等分析测试手段对所制备的TiO2薄膜的相结构、表面化学组成及形貌等进行了分析和表征,研究了不同水热条件对所制备TiO2薄膜的光吸收特性的影响.结果表明,所制备的薄膜为锐钛矿型TiO2,均匀、致密、无可视缺陷,具有优异的可见光透过性和紫外吸收特性 关键词： 水热法 TiO2薄膜 比消光度     

脉冲激光沉积法制备钛酸锶钡薄膜及其光电性质

用脉冲激光沉积技术制备了钛酸锶钡(Ba0.5Sr0.6TiO3薄膜.用X射线光电子能谱和原子力显微镜分别分析了薄膜的化学组分和表面形貌.在交流信号为50 mV和100 kHz时测量了薄膜的介电系数和介电损耗随外加电场的变化关系,得出最高的介电可调率达到45%.利用单光束纵向Z扫描的方法研究了薄膜的非线性光学性质,得到非线性折射率为5.04×10-6cm2/kW,非线性吸收系数为3.59×10-6m/W,测量所用光源的波长为532 nm,脉宽为55 ps,表明Ba0.5Sr0.5TiO3薄膜有较快的非线性光学响应.     

反应前驱物中n(S)∶n(Cd)对CdS薄膜结构及发光特性的影响

采用化学水浴以CdCl2·H2O、CS( NH2)2、NH4Cl、NH3·H2O和去离子水作为反应前驱物制备CdS纳米晶薄膜.采用扫描电镜( SEM)、X射线衍射(XRD)、透射光谱和稳态荧光光谱,研究了反应前驱物中不同的n(S)∶n(Cd)对所制备的CdS薄膜的形貌、结构和光学性能的影响.结果表明:反应前驱物中n(S...     

A comprehensive study of opto-electrical and nonlinear properties of Cu@CdS thin films for optoelectronics

Good quality cadmium sulfide (CdS) thin films were deposited on substrates of glass with different Cu concentrations using a sophisticated spray pyrolysis technique. Structural study confirms the formation of hexagonal phase CdS films with good crystallinity. The crystallite size was calculated to be in range from 19 to 21 nm and the texture coefficient was found to be higher along (110) plane for 1.0 wt.% CdS:Cu film. Further confirmation of hexagonal phase with improved crystallinity was approved by vibrational spectroscopy analysis. SEM mapping/EDX spectra shows the homogeneous presence of Cu in final film. SEM signify the nanostructured thin films fabrication with nanocrystallites formations. The optical transparency of fabricated films was noticed in range of 60 to 80%. The absorption and refractive indices values were estimated and found in range of 0.03 to 0.24, 1 to 3. The direct energy gap was noticed to reduce from 2.44 to 2. 31 eV by Cu doping. The PL spectra contains a single peak in range from 502 to 532 nm for pure and Cu doped CdS films, which is assigned to green emission and noted to be shifted towards lower wavelength. Dielectric constant, loss. loss tangent and conductivity were also determined and discussed. Moreover, the third order nonlinear susceptibility and nonlinear refractive index were calculated and found to be of high orders. The optical limiting study was also carried and shows noticeable effect of Cu doping. All results suggest that the CdS:Cu films are of good quality hence can be employed in opto-nonlinear devices.     

不同衬底和CdCl2退火对磁控溅射CdS薄膜性能的影响

在科宁7059玻璃, FTO, ITO, AZO四种衬底上磁控溅射CdS薄膜, 并在CdCl₂+干燥空气380 ℃退火, 分别研究了不同衬底和退火工艺对CdS薄膜形貌、结构和光学性能的影响. 扫描电子显微镜形貌表明: 不同衬底原位溅射CdS薄膜的形貌不同, 退火后相应CdS薄膜的晶粒度和表面粗糙度明显增大. XRD衍射图谱表明: 不同衬底原位溅射和退火CdS薄膜均为六角相和立方相的混相结构, 退火前后科宁7059玻璃, FTO, AZO衬底上CdS薄膜有 H(002)/C(111) 最强衍射峰, ITO衬底原位溅射CdS薄膜没有明显的最强衍射峰, 退火后出现 H(002)/(111) 最强衍射峰. 紫外-可见分光光度计分析表明: AZO, FTO, ITO, 科宁7059玻璃衬底CdS薄膜的可见光平均透过率依次减小, 退火后相应衬底CdS薄膜的可见光平均透过率增大, 光学吸收系数降低; 退火显著增大了不同衬底CdS薄膜的光学带隙. 分析得出: 上述结果是由于不同衬底类型和退火工艺对CdS多晶薄膜的形貌、结构和带尾态掺杂浓度改变的结果. 关键词： CdS薄膜 磁控溅射 退火再结晶 带尾态     

GaAs/SiO2纳米晶镶嵌薄膜的拉曼光谱与吸收光谱研究

采用射频磁控共溅射与高真空退火相结合的方法,分别在单晶硅片和光学石英玻璃片上制备了ＧａＡｓ／ＳｉＯ２纳米晶镶嵌薄膜样品。激光拉曼光谱的测量结果表明,退火态样品（４００℃,６０ｍｉｎ）的拉曼光谱特征峰呈现宽化和红移,红移量为９．５ｃｍ＾－１,对应薄膜中ＧａＡｓ纳米晶粒平均粒径约为３ｎｍ。样品的室浊吸收光谱测量结果表明,由于受量子限域效应的主导作用,与ＧａＡｓ块状单晶相比,样品光学吸收边呈现出明显的蓝     

聚电解质/硫化镉薄膜的层-层组装及其光谱分析

以六偏磷酸钠为稳定剂,采用硝酸镉和硫化钠合成了硫化镉纳米颗粒,利用层-层组装技术制备了聚电解质与硫化镉胶体的复合薄膜.吸收光谱显示,硫化镉胶体的吸收带边相对其体相有明显蓝移,并可观察到激子吸收峰,显示出量子尺寸效应.复合薄膜的荧光光谱上出现2个发光带,随着薄膜的组装层数的增加,复合薄膜的带带跃迁发光和表面态发光都相应减弱.     

Microstructural, optical and photocatalytic properties of CdS doped TiO2 thin films

CdS doped TiO₂ thin films (with CdS content=0, 3, 6, 9 and 12 at%) were grown on glass substrates. The X-ray diffraction analysis revealed that the films are polycrystalline of monoclinic TiO₂ structure. The microstructure parameters of the films such as crystallite size (D_ν) and microstrain (e) are calculated. Both the crystallites size and the microstrain are decreased with increasing CdS content. The optical constants have been determined in terms of Murmann's exact equations. The refractive index and extinction coefficient are increased with increasing CdS content. The optical band gap is calculated in the strong absorption region. The possible optical transition in these films is found to be an allowed direct transition. The values of E_g^opt are found to decrease as the CdS content increased. The films with 3 at% CdS content have better decomposition efficiency than undoped TiO₂. The films with 6 at% and 9 at% CdS content have decomposition efficiency comparable to that of undoped TiO₂, although they have lower band gap. The CdS doped TiO₂ could have a better impact on the decomposing of organic wastes.     

(Pb,La)Ti03铁电薄膜的太赫兹时域光谱实验研究

利用THz时域光谱技术(THz-TDS)探测了制作在SiO2/Si衬底上的(Pb,La)TiO3铁电薄膜的频谱响应,获得了三种不同烧结温度的掺镧钛酸铅(PLT)薄膜的THz频谱.根据实验数据计算得到了PLT薄膜在0.2～3 THz频段内的吸收系数、折射率和复介电常数,并对比了三种不同烧结温度的PLT薄膜的实验计算结果.实验结果表明,三种PLT薄膜在所测频段内均有较强吸收,且都在1.5 THz处有一个明显的吸收峰,在2.25 THz处有一个相对较弱的吸收峰.