| GaAs光电阴极制备工艺的俄歇分析 |
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| 引用本文： | 孙长印,张书明.GaAs光电阴极制备工艺的俄歇分析[J].光子学报,1996,25(10):902-905. |
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| 作者姓名： | 孙长印 张书明 |
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| 作者单位： | 中国科学院西安光学精密机械研究所半导体室 |
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| 摘 要： | 我们在一台制作第三代象增强器的超高真空系统中安装了俄歇(Auger)能谱仪,以其对GaAs光电阴极的制备过程进行在线监测分析,其中包括选择性腐蚀过程的俄歇观测,阴极激活前清洁措施的效果评价和Cs-O激活过程中As/Ga俄歇信号比对光电灵敏度的影响,Cs源纯度的分析及对光电发射的影响。根据分析结果,激活出了1000μA/lm的反射式光电阴极和500μA/lm的透射式光电阴极。
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| 关 键 词： | 光电阴极 热清洁 激活 俄歇分析 |
AES STUDIES OF GaAs PHOTOCATHODE FABRICATION PROCESS |
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| Sun Changyin,Zhang Shuming,Zhu Li’an,Sai Xiaofeng,Gao Hongkai,Hou Xun.AES STUDIES OF GaAs PHOTOCATHODE FABRICATION PROCESS[J].Acta Photonica Sinica,1996,25(10):902-905. |
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| Authors: | Sun Changyin Zhang Shuming Zhu Li’an Sai Xiaofeng Gao Hongkai Hou Xun |
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| Institution: | Xi’an Institute of Optics and Precision Mechanics, P. O. Box 80, Xi’an 710068 |
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| Abstract: | The fabrication steps of photocathode for the third generation image intensifier have been studied by an Auger Eletron Spectroscope in situ a UHV system. In this paper,the resultant surface after selective etching are evaluated,the effects of the cleaning procedures before activation are com-pared,the relation between As/Ga Auger signal ratio and photoemission are reported.Photoemission as high as S=1000μA/lm has been obtained with a reflective GaAs cathode and S=500μA/lm with a transmissive cathode. |
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| Keywords: | Photocathode Etching Surface cleaning Activation |
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