自由基CH和CH_2的基态结构与势能函数

选用OCSD(T)/Aug-cc-PV5Z方法,对CH分子基态的平衡几何进行了优化计算,得到了对应的计算结果.运用含微扰的二次组态相关方法,选用CC-PV5Z基组对CH2分子的基态平衡几何进行了优化计算,得到的结果是:该分子的基态结构为C2v构型,电子态为X3B1,平衡核间距RCH=0.10769nm,键角∠HCH=133.707°,离解能De=5.3277eV,基态振动频率ν1(a1)=1094.24cm-1,ν2(a1)=3144.91cm-1,ν3(b2)=3373.63cm-1.采用多体项展式理论推导了CH2分子基态的解析势能函数,其等值势能图准确再现了CH2分子的结构特征及其势阱深度与位置.在分析讨论势能面的静态特征时,得到了CH H→CH2反应中存在的两个对称鞍点,其活化能为0.13124kJ/mol.     

二硫化硒的结构与抗氧化性

基于方法 b3p86/6-311g*,计算Se S2得到基态为1Α1,它属于C2V构型,其正则振动频率为ν1(π)=519.19 cm-1,ν2(π)=501.36 cm-1和ν3(σ)=202.71 cm-1.Se S2基态1Α1的能隙为0.0972 a.u.,比较小;而用同样方法计算的水基态的能隙为0.34237 a.u.,后者为前者的3.5倍.可见,Se S2的单重态1Α1的最低空轨道相对地容易接受电子,体现了Se S2的抗氧化性,而且,它的电子光谱中在8.8928 e V=71724.9cm-1有一大的跃迁,这表明Se S2容易激发.     

BH2和AlH2分子的结构及其解析势能函数

运用二次组态相关(QCISD)方法, 分别选用6-311++G(3df,3pd)和D95(3df,3pd)基组,对BH2和AlH2分子的结构进行了优化计算,得到BH2分子的稳态结构为C2v构型,电子态为2A1、平衡核间距RBH=0.1187nm、键角∠HBH=128.791°、离解能De=3.65eV、基态振动频率ν1(a1)=1020.103cm-1,ν2(a1)=2598.144cm-1,ν3(b2)=2759.304cm-1 .AlH2分子的稳态结构也为C2v构型,电子态为2A1、平衡核间距RAlH=0.1592nm、键角∠HAlH=118.095°、离解能De=2.27eV、基态振动频率ν1(a1)=780.81cm-1,ν2(a1)=1880.81cm-1,ν3(b2)=1910.46cm-1 .采用多体项展式理论推导了基态BH2和AlH2分子的解析势能函数,其等值势能图准确再现了BH2和AlH2分子的结构特征及其势阱深度与位置.分析讨论势能面的静态特征时得到BH+H→BH2反应中存在鞍点,活化能为150.204kJ/mol;AlH+H→AlH2反应中也存在鞍点,活化能为54.8064kJ/mol.     

Si_3分子基态(X~1A_1)的结构与分析势能函数

应用群论及原子分子反应静力学方法推导Si分子的电子态及其离解极限,在B3P86/CC-PVTZ水平上,对Si3分子基态进行优化计算,得出Si3基态的单重态能量最低,其稳定构性为的C2V构型,平衡核间距Re=0.2176nm、∠213=79.7°,能量为-869.2057a.u..同时计算出基态的简正振动频率:对称伸缩振动频率ν(B2)=547.6446cm-1,弯曲振动频率ν(A1)=185.6100cm-1和反对称伸缩振动频率ν(A1)=559.6090cm-1.在此基础上,使用多体项展式理论方法,导出了基态Si3分子的全空间解析势能函数,该势能函数准确再现了Si3(C2V)平衡结构.     

S3分子的构型与离解极限

在QCISD/6311 G水平上,优化出S3分子的稳定构型有C2v、D3h,且基态为C2v构型,属X1A1态,平衡核间距r12=1.94,键角∠321=117.2°,离解能为De=4.7668eV。并得到基态谐振频率ν1(a1)=574cm-1,ν2(a1)=265cm-1,ν3(b2)=646cm-1。同时用UMP2/6311 G方法算出S3分子可能的激发态有1A2,1B2,3A2,3B1和3B2。对硫灯的发光机理作了初步探讨     

NiH2分子的结构及其势能函数

应用群论及原子分子反应静力学方法推导了NiH2分子基态的电子态及其离解极限,在MP2/6-311G水平上,优化出NiH2(3Δg)分子稳定构型为D∞h,其平衡核间距Re=0.157 3 nm、∠HNiH=180.00°,同时计算出振动频率:对称伸缩振动频率ν1=2 000 cm-1,弯曲振动频率ν2=721 cm-1和反对称伸缩振动频率ν3=1 875 cm-1.在此基础上,使用多体项展式理论方法,导出了基态NiH2分子的全空间解析势能函数,该势能函数准确地再现了NiH2(D∞h)平衡结构.     

Pu_3体系的结构与势能函数

用相对论有效原子实势 (RECP)和密度泛函 (B3LYP)方法对Pun(n =2 ,3)体系的结构进行了优化 ,得到了Pu2 和Pu3分子的几何构型分别为D∞h,D3h,其基态分别为 13和 19重态 .在B3LYP RECP水平上得到Pu2 分子的光谱常数ωe=5 2 .3845cm- 1 ,ωe 　χe=0 .0 2 0 1cm- 1 和Pu3分子的谐振频率 (ν1 =5 6 .90 0 7cm- 1 ,ν2 =5 7.1816cm- 1 ,ν3=6 4 0 785cm- 1 )等性质 ,并通过正规方程组和多体展式理论 ,得到了Pu2 ,Pu3的分析势能函数 .     

用耦合簇方法及相关一致基研究PH2(X2B1)自由基的解析势能函数

利用耦合簇方法和Dunning等提出的系列相关一致基对PH2自由基的基态结构进行优化,并使用优选出的cc-pV5Z基组对其进行频率计算.结果表明,平衡核间距RP-H=0.14185 nm,键角αHPH=91.8624°,离解能De(HP-H)=3.483 eV,对称伸缩振动频率ν1(a1)=2399.9781cm-1,弯曲振动频率ν2(a1)=1128.4213 cm-1,反对称伸缩振动频率ν3(b2)=2407.8374 cm-1.在此基础上采用多体项展式理论导出了PH2自由基的解析势能函数,其等值势能图准确再现了PH2自由基分子的平衡结构特征和动力学特征.     

基态自由基N_2H(~2A′)的结构与相关效应

应用HF和组态相互作用方法 (QCISD)在不同的基组下对N2 H体系进行abinitio计算 ,得到了N2 H( X2 A′)基态在QCISD/6 311 水平上的平衡结构 :RNN=0 .1186nm、RNH=0 .10 5 2nm和∠NNH =115 .5° ,其偶极矩为 1.976D ,谐振频率ν1=1870 .44cm-1、ν2 =2 990 .34cm-1和ν3=116 9.2 3cm-1,力常数和氢离解鞍点RNN=0 .113 1nm ,RNH=0 .1419nm和∠NNH =117.2 8° ,并考查了不同基组和方法对N2 H体系的影响     

用耦合簇理论及相关一致基研究NH2自由基的解析势能函数

运用CCSD(T)理论和Dunning等的系列相关一致基对NH2自由基的基态结构进行了优化,并使用优选出的cc-pV5Z基组对其进行了频率计算.得到的结果是:平衡核间距RNH=0.10247 nm,键角∠HNH=102.947°,离解能De=4.2845 eV,振动频率ν1(a1)=1546.0342 cm-1,ν2(a1)=3379.5543 cm-1和ν3(b2)=3474.4784 cm-1.对NH自由基及H2分子,使用优选出的cc-pV6Z基组对其基态的几何构型与谐振频率进行了计算并进行了单点能扫描,且将扫描结果拟合成了解析的Murrell-Sorbic函数.采用多体项展式理论导出了NH2自由基的解析势能函数,其等值势能图准确再现了它的离解能和结构特征.报导了NH2自由基对称伸缩振动等值势能图中存在的两个对称鞍点,对应于反应NH+H→NH2,势垒高度约为0.1378×4.184 kJ/mool.     

核磁共振碳谱研究:烷烃化学位移和(CSS)与分子路径指数矢量(VPM)

系统研究了核磁共振碳谱和化学位移规律及其定量构谱关系(QSSR).本文研究了一组十元素分子路径指数矢量VPM,并发现它与烷烃化学位移和CCS有良好线性相关性.采用多元线性回归进行准确估计与预测,结果优良.     

Reduced s-d model with antiferromagnetically coupled impurity spins

An antiferromagnetic equivalent-neighbour Heisenberg interaction H_i between impurity spins is added to the reduced s-d Hamiltonian H_r previously introduced by simplifying the Kondo s-d exchange Hamiltonian H_K. Asymptotic mean-field theory is developed for H_r + H_i, in the presence and absence of external magnetic field, and applied to (La_1−xCe_x)Al₂ alloys. Specific heat c_i(T) and zero-field susceptibility χ_i(0,T) curves for (La_1−xCe_x)Al₂ are depicted. The coupling constants of H_r + H_i and conduction bandwidth are adjusted so that T_c temperatures for x = 0.2, 0.1 are equal to the experimental values. c_i(T) exhibits a jump at T_c and is decreasing for T < T_c. χ_i(0,T) has a first order pole at T_c which corresponds to the maximum of experimental susceptibility and χ_i(0,0) > 0. These results improve those obtained earlier on the grounds of H_r theory.     

Interrelations of discrete Painlevé equations through limiting procedures

We study the discrete Painlevé equations associated to the affine Weyl group which can be obtained by the implementation of a special limits of -associated equations. This study is motivated by the existence of two -associated discrete both having a double ternary dependence in their coefficients and which have not been related before. We show here that two equations correspond to two different limits of a -associated discrete Painlevé equation. Applying the same limiting procedures to other -associated equations we obtained several -related equations most of which have not been previously derived.     

稠苯芳杂环及其烷基质子化学位移的计算

本文提出了予测稠苯芳杂环及其烷基链上质子化学位移的计算方法。 将稠苯芳杂环化合物用凯库勒式表示,计算式为为需考虑的苯环内的乙烯基效应。σ_mi,ci为各苯环的环流效应。σ_1,Hc为各芳杂环的屏蔽效应,对杂环上质子它就是该单独芳杂环上相应质子的δ值,对苯环上质子要将它分解为各结构因素的效应,即:σ_1,He=(1/2)^d-1δ_x=y(或σ_z)+σ_c-c·σ_m,H. σ_x-y与σ_z为杂原子或其基团的屏蔽效应,σ_c=c为存在于芳杂环中的乙烯基的效应,σ_m,Hc为芳杂环的环流效应,d为对不同质子所考虑的键数。有取代基时需考虑取代基的效应。计算环上烷基质子的公式为:δ=σ_p,CH3+ασ_c,CH3+βσ_t,CH3+σ_l,G σ_l,G为稠苯芳杂环基的某级效应。     

What can we learn from B→DsKπ, Bd→DsKπ and Bd→DsK decays?

We study the nonresonant three-body decays of B⁺→D^(*)−_sK⁺π⁺ and B_d→D_s^(*)−K⁰π⁺. We find that these decays can provide the information on the time-like form factors of D^(*)_sK. We also explicitly investigate B_d→D_s^(*)−K^*+ decays by discriminating the nonresonant contributions with the unknown D^(*)_s wave functions being fixed by the measured mode of B_d→D_s⁻K⁺.     

Structural phase transitions at clean and metal-covered Si(111) surfaces investigated by RHEED spot analysis

Structural phase transitions between various kinds of superlattice structures formed on a Si(111) surface have been investigated by spot analysis of reflection high-energy electron diffraction (RHEED). Reversible transitions induced by temperature changes and irreversible ones induced by metal depositions were observed. Detailed discussions on the dynamics of the phase transitions are made by quantitative analyses of integrated spot intensity and profile. For a phase transition of 7′7  1′1 structures on a clean Si(111) surface, a hysteresis with temperature difference of 5°C. between in heating and cooling processes was found in the spot intensity change, indicating a first-order transition. Hysteresis was hardly recognized, on the other hand, for transitions of Au-induced superstructures (5×2-Au or ×-Au)  1×1-Au. The spot profiles were found to be broadened during the transition of Si(111)-×-Au  1×1-Au, which was a signature of a continuous transition, while the profiles remained unchanged during the transitions of the 7×7  1×1 and 5×2-Au  1×1-Au phases. Structural conversions induced by In adsorption on the Si(111) surface kept at constant temperatures were also analyzed. The conversions at room temperature were totally dependent on the initial substrate surface structures; the 7×7 surface did not show any structural conversion with In adsorption, while the ×-In surface successively converted to a 2×2 and a × phase with coverage increase. The structural transitions at elevated temperatures were sensitively dependent on the temperatures. Sequences of transitions among the 7×7, 4×1, ×, 1×, and ×4 were quantitatively revealed as changes in RHEED spot intensity.     

Interband Stark effects in InxGa1−xAs/InyAl1−yAs coupled step quantum wells

The effects of an electric field on the interband transitions in In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum wells have been investigated both experimentally and theoretically. A In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well sample consisted of the two sets of a 50 Å In_0.53Ga_0.47As shallow quantum well and a 50 Å In_0.65Ga_0.35As deep step quantum well bounded by two thick In_0.52Al_0.48As barriers separated by a 30 Å In_0.52Al_0.48As embedded potential barrier. The Stark shift of the interband transition energy in the In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well is larger than that of the single quantum well, and the oscillator strength in the In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well is larger than that in a coupled rectangular quantum well. These results indicate that In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum wells hold promise for potential applications in optoelectron devices, such as tunable lasers.     

ErP5O14非晶玻璃的红外量子剪裁

研究了Er_1.0P₅O₁₄铒非晶玻璃的红外量子剪裁现象. 从吸收谱和激发光谱的计算比较中肯定了Er_1.0P₅O₁₄非晶 玻璃的1537.0 nm红外荧光为多光子量子剪裁荧光. 从Er_1.0P₅O₁₄非晶玻璃的可见和红外荧光发射光谱中发现激发²H_11/2, ⁴G_11/2和⁴G_9/2能级所导致的⁴I_13/2→⁴I_15/2量子剪裁红外荧光很强;基于自发辐射速率、无辐射弛豫速率和能量传递速率等参数的计算,对其量子剪裁机理进行了分析.发现起源于基态的强下转换能量传递{²H_11/2→⁴I_9/2,⁴I_15/2→⁴I_13/2},{⁴G_11/2→⁴I_13/2, ⁴I_15/2→²H_11/2},{⁴G_9/2→⁴F_7/2,⁴I_15/2→⁴I_13/2}和{⁴G_9/2→⁴I_13/2, ⁴I_15/2→²H_11/2}是导致Er_1.0P₅O₁₄非晶玻璃具有强的三光子和四光子量子剪裁红外荧光的原因.研究结果对改善太阳能电池效率有一定意义.