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1.
为了得到一种轻质、高强度、耐烧灼的新型碳泡沫材料,以无定形AlN为添加剂,在空心微球/网络复合型碳泡沫的基础上,采用退火热处理工艺成功地制备出了AlN/C复合泡沫材料.通过扫描电镜、透射电镜对样品进行表征,测试结果表明无定形AlN在碳微球的表面重结晶为AlN晶须,其直径大约为50nm左右,长度10μm以上,具有较大的长径比.X-射线衍射峰证明样品石墨化程度高,且AlN晶须为六方结构.X-射线光电子能谱测试发现在287.5eV处有较明显的C-N峰出现,这表明AlN和碳泡沫在界面处通过C-N键结合.同时,对其力学性能进行测试,通过分析应力-应变测试结果,AlN/C复合泡沫材料的压缩强度为40.27MPa,相对碳泡沫材料而言提高了近一个数量级.测试结果表明,AlN晶须显著增强了碳泡沫的压缩强度,这种新型复合泡沫材料有望应用于各种抗压减震航空材料. 相似文献
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借助二次模板法成功的合成了AlN纳米线宏观阵列,并进行了表征.主要研究CVD法制备有一定取向,直径均匀的AlN纳米线宏观阵列的过程.通过气相沉积法和利用PS球自组装模板制备了金属纳米颗粒模板;再以模板上的金属纳米颗粒作为催化剂,利用化学气相沉积在模板上合成AlN纳米线宏观阵列.借助SEM,TEM观察所得样品,AlN纳米线阵列面积约为0.3 mm×0.2 mm,直径和长度分布均匀,平均直径约为41 nm,平均长度为1.8 μm左右,分散密度和覆盖率大的六角结构AlN纳米线宏观阵列.得到了可控制备AlN纳米线
关键词:
AlN纳米线阵列
模板法
CVD法
SEM 相似文献
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采用直流反应磁控溅射法,在玻璃衬底上生长了沿(002)择优取向的AlN薄膜,用X射线衍射仪(XRD)和扫描电子显微镜(SEM)对AlN薄膜结构和表面形貌进行表征,并测量了AlN薄膜在405 nm激光激发下的光致发光(PL)光谱。结果表明,在不同氮气含量条件下生长的AlN薄膜均呈(002)择优取向,薄膜表面呈小颗粒密堆积排列,颗粒尺寸在20 nm左右。不同氮气含量条件下生长的AlN薄膜在550 nm处均有较强的由于V_(Al)能级向价带跃迁引起的缺陷能级发光峰;AlN薄膜在589,614,654 nm处也有较弱的缺陷能级发光峰,随着氮气含量增大,缺陷能级发光峰越来越明显,产生原因分别为O_N-O_N缺陷对向V_(Al)-2O_N产生的复合缺陷能级的跃迁、导带向与氧有关的杂质能级(I_O)间的跃迁以及V_(Al)-O_N深能级向价带的跃迁。 相似文献
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采用二次阳极氧化法,制备了多孔氧化铝模板。在真空背景下,用脉冲激光沉积法,在多孔氧化铝模板上沉积一层硅,制成了硅与多孔氧化铝的复合膜,然后用盐酸将多孔氧化铝模板完全腐蚀掉,制备均匀分布着硅纳米线的硅膜。用扫描电子显微镜、X射线衍射、光致发光对纳米硅的结构和光学性质进行了测试分析。结果表明:硅纳米线的直径约为67.5nm,长度约为100nm,数密度约1011/cm2。光致发光谱是可见光范围内的一个宽发射峰,上面叠加了许多具有精细结构的尖峰,尖峰之间的波长间隔不相等,但能量间隔相等。分析了样品的结构特点,利用量子限制模型和表面发光中心模型对光谱进行了解释,提出了一个新的能级模型,求出了各个尖峰对应激发态能级的量子数。为探讨纳米硅的发光机制和实现硅发光器件的制备提供了实验依据。 相似文献
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In掺杂ZnO薄膜的制备及其特性研究 总被引:15,自引:2,他引:13
采用射频反应溅射技术在硅(100)衬底上制备了未掺杂和掺In的ZnO薄膜。掠角X射线衍射测试表明,实验中制备的掺In样品为ZnO薄膜。用X射线衍射仪、原子力显微镜和荧光分光光度计分别对两样品的结构、表面形貌和光致发光特性进行了表征,分析了In掺杂对ZnO薄膜的结构和发光特性的影响。与未掺杂ZnO薄膜相比,掺In ZnO薄膜具有高度的C轴择优取向,同时样品的晶格失配较小,与标准ZnO粉末样品之间的晶格失配仅为0.16%;掺In ZnO薄膜表面平滑,表面最大不平整度为7nm。在掺In样品的光致发光谱中观察到了波长位于415nm和433nm处强的蓝紫光双峰,对掺In样品的蓝紫双峰的发光机理进行了讨论,并推测出该蓝紫双峰来源于In替位杂质和Zn填隙杂质缺陷。 相似文献
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采用自组装技术,利用均聚极性高分子(聚丙烯酰胺、聚乙烯醇等)长分子链作为自组装模板在半导体硅衬底上自组装生长出ZnO纳米线。采用扫描电镜(FE-SEM)和透射电镜(HRTEM)对样品的表面形貌和结构分析表征的结果表明,ZnO纳米线直径约50~80nm、长度大于4μm,具有六方纤锌矿单晶结构,且沿c轴方向择优取向生长。采用室温下光致发光(PL)谱和紫外吸收(UV)光谱对制得的ZnO纳米线的光学性能研究表明,其PL光谱上有较强的紫外发射和较弱的蓝光发射,UV吸收光谱表明样品在紫外区有强的宽带吸收,且随着纳米线粒径的减小,吸收峰出现了蓝移现象。研究探讨了高分子诱导ZnO纳米线自组装定向生长机制、发光机理及其与工艺条件的内在联系。 相似文献
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Amorphous silicon nitride (a-SiNx) films were deposited using plasma-enhanced chemical-vapor deposition (PECVD) and subsequently, thermal annealing processes were performed at 700-1000 °C in the ultra-high vacuum (UHV) condition. A strong photoluminescence (PL) peak induced by luminescent defect centers was observed at 710 nm for the as-deposited sample. When the sample was annealed at 700-1000 °C, the PL peak intensity became about 3-12 times stronger with no shift of the PL peak. To investigate the origin of the change in PL peak intensity after the thermal annealing, Si 2p and N 1s core-level spectra were systematically analyzed by high-resolution photoemission spectroscopy (HRPES) using synchrotron radiation. In particular, N 1s spectra were decomposed with three characteristic nitrogen-bonding states. It is revealed that the nitrogen bonding state with N-Si and NSi2 configurations (denoted as N3) contributes mainly to the change in PL peak intensity. We note that luminescent nitrogen related defect centers such as N4+ and N2° are localized in the state N3. Detailed analysis of the experimental results shows that the state N3 is located in the interface bounded by the region of the nano-sized stoichiometric silicon nitride Si3N4 (denoted as N1) and is considerably influenced by the thermal annealing, which is an appropriate process to cause strong photoluminescence of the related samples as mentioned above. 相似文献
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将功率密度约为0.5 J·s-1·cm-2、脉冲宽度约为8 ns、束斑直径为0.045 mm、波长为1 064 nm的YAG激光束照射在硅样品表面打出小孔,在孔内的侧壁上形成较规则的网孔状结构;该结构有很强的光致荧光,其强度比该样品的瑞利散射强;发光峰中心约在700 nm处。在无氧化的环境里用激光加工出的硅样品几乎无发光,这证实了氧在光致荧光增强上起着重要作用。用冷等离子体波模型来解释孔侧壁网孔状结构形成的机理,并用量子受限-发光中心模型来解释纳米网孔壁结构的强荧光效应。当激光辐照时间为9 s时,孔洞侧壁上的网孔状结构较稳定,且有较强的光致荧光。 相似文献
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"采用电场辅助电化学沉积法,利用阳极氧化铝模板模板制备了高度择优取向的硫掺杂ZnO单晶纳米线.X射线衍射仪、隧道电子显微镜、选取电子衍射对所得样品的结构、形貌分析表明,所得纳米线是沿(101)择优取向的六方纤锌矿结构单晶纳米线,长约几十微米、平均直径约70 nm. X射线光电子能谱对化学组成的分析进一步证实掺杂硫原子的存在.用荧光光谱仪(PL)对S掺杂前后的ZnO纳米线进行光学特性测量发现,S掺杂较大地改变了ZnO纳米线的发光性质.在PL谱中,除了有典型的ZnO纳米线在378、392 nm处的强紫外发光峰 相似文献
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Zhaozhu Yang Huizhao Zhuang Lixia Qin Jinhua Chen Hong Li Dongdong Zhang 《Applied Surface Science》2008,254(13):4166-4170
GaN nanowires and nanorods have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga2O3/V films at 900 °C in a quartz tube. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectrum were carried out to characterize the structure, morphology, and photoluminescence properties of GaN sample. The results show that the GaN nanowires and nanorods with pure hexagonal wurtzite structure have good emission properties. The growth direction of nanostructures is perpendicular to the fringes of (1 0 1) plane. The growth mechanism is also briefly discussed. 相似文献
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采用乙酰丙酮铜为原料, 通过化学气相沉积大批量制备出Cu/C核/壳纳米颗粒和纳米线. 研究结果表明, 通过控制沉积温度可对Cu/C核/壳纳米材料的形貌和结构进行很好的控制. 比如, 沉积温度为400 ℃时可获得直径约200 nm的Cu/C核/壳纳米线, 沉积温度为450 ℃ 时可获得直径约200 nm的Cu/C核/壳纳米颗粒和纳米棒的混合产物, 沉积温度为600 ℃时可获得直径约22 nm的Cu/C核/壳纳米颗粒. 获得的Cu/C核/壳纳米结构是由一个新颖的凝聚机理形成的, 而这种机理不同于著名的溶解-析出机理. 紫外-可见光谱和荧光光谱分析结果表明: Cu/C核/壳纳米线和纳米颗粒均在225 nm处出现Cu的吸收峰, 同时在620 和616 nm处分别出现了纳米线和纳米颗粒的表面等离子共振吸收峰. Cu/C核/壳纳米线在312 和348 nm处、 Cu/C核/壳纳米颗粒在304 和345 nm处出现荧光发射谱峰.
关键词:
Cu/C核/壳结构
纳米线
纳米颗粒
光学性能 相似文献
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以金属Au-Al为催化剂,在温度为1 100 ℃,N2气流量为1 500 sccm、生长时间为30 min,从Si(100)衬底上直接生长了直径约为50~120 nm、长度为数百纳米的高密度、大面积的Si纳米线。然后,利用Tb2O3在不同温度(1 000~1 200 ℃)、掺杂时间(30~90 min)和N2气流量(0~1 000 sccm)等工艺条件下对Si纳米线进行了Tb掺杂。最后,对Si(100)衬底进行了Tb掺杂对比。室温下,利用荧光分光光度计(Hitachi F-4600) 测试了Tb掺杂Si纳米线的光致发光特性。实验研究了不同掺杂工艺参数(温度、时间和N2气流量)对Tb3+绿光发射的影响。根据Tb3+能级结构和跃迁特性对样品的发射光谱进行了分析。结果表明,在温度为1 100 ℃,N2气流量为1 500 sccm、时间为30 min等条件下制备的Si纳米线为掺杂基质,Tb掺杂温度为1 100 ℃,N2气流量为1 000 sccm、光激发波长为243 nm时,获得了最强荧光发射,其波长为554 nm(5D4→7F5),同时还出现强度相对较弱的494 nm(5D4→7F6),593 nm(5D4→7F4)和628 nm(5D4→7F3)三条谱带。Tb掺杂的体Si衬底在波长554 nm处仅有极其微弱的光致发光峰。 相似文献
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GaN nanowires have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga2O3/Cr thin films at 950 °C. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), FT-IR spectrophotometer, scanning electron microscopy (SEM), high-resolution transmission electron microscopy (TEM), and photoluminescence (PL) spectrum were carried out to characterize the microstructure, morphology, and optical properties of GaN samples. The results demonstrate that the nanowires are single-crystal GaN with hexagonal wurtzite structure and high-quality crystalline, have the size of 30-80 nm in diameter and several tens of microns in length with good emission properties. The growth direction of GaN nanowires is perpendicular to the fringe of (1 0 1) plane. The growth mechanism of GaN nanowires is also discussed in detail. 相似文献
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Changhyun Jin Hyunsoo Kim Chanseok Hong Hyoun Woo Kim Chongmu Lee 《Applied Physics A: Materials Science & Processing》2010,100(1):151-157
We have fabricated cupric oxide (CuO)-core/silica (SiO
x
)-shell nanowires by using a two-step process: thermal oxidation and sputtering. The structure and photoluminescence (PL)
properties of the core/shell nanowires has been investigated by using scanning electron microscopy, transmission electron
microscopy, X-ray diffraction and PL analysis techniques. The CuO cores and the SiO
x
shells of the as-synthesized nanowires have crystalline monoclinic CuO and amorphous SiO
x
structures, respectively. The PL emission intensity of the CuO-core/SiO
x
-shell nanowires has been increased but the emission peak position has not been nearly shifted by annealing in a nitrogen
atmosphere, whereas the emission peak position has been shifted a lot from 510 to around 650 nm as well as the emission intensity
has been increased by annealing in an oxygen atmosphere. In addition, the origin of the PL enhancement in the CuO-core/SiO
x
-shell nanowires by annealing and the growth mechanism of the CuO nanowires have been discussed. 相似文献
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It was demonstrated that the etching in HF-based aqueous solution containing AgNO3 and Na2S2O8 as oxidizing agents or by Au-assisted electroless etching in HF/H2O2 solution at 50 °C yields films composed of aligned Si nanowire (SiNW). SiNW of diameters ∼10 nm were formed. The morphology and the photoluminescence (PL) of the etched layer as a function of etching solution composition were studied. The SiNW layers formed on silicon were investigated by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and photoluminescence. It was demonstrated that the morphology and the photoluminescence of the etched layers strongly depends on the type of etching solution. Finally, a discussion on the formation process of the silicon nanowires is presented. 相似文献
20.
Hyoun Woo Kim Mesfin A. Kebede Hyo Sung Kim Buddhudu Srinivasa Doo Young Kim Jae Young Park Sang Sub Kim 《Current Applied Physics》2010,10(1):52-56
ZnO nanowires have been synthesized by heating Zn powders under nitrogen (N2) gas atmosphere. The influence of the growth temperature on the morphology, structure, and photoluminescence (PL) properties of ZnO nanowires has been investigated. At the higher-temperature growth process, thinner nanowires have been obtained. Interestingly, it is observed that the variation of growth temperature has significantly affected the photoluminescence spectra of the ZnO nanowires, showing an enhancement in the relative intensity of the green to UV emission bands with the increase of the growth temperature. In addition, the oxygen sensing properties of the as-synthesized ZnO nanowires were tested. 相似文献