氧非正分La0.9Ba0.1MnO3-δ/SrTiO3:Nb p-n异质结的整流特性研究

利用脉冲激光沉积技术在掺Nb的SrTiO₃衬底上制备了氧非正分La_0.9Ba_0.1MnO_3-δ/SrTiO₃:Nb p-n异质结.在20—300K这一较宽的温度范围内获得了光滑的整流曲线.整流实验表明：该p-n异质结的正向扩散电压V_D随着温度升高在薄膜金属—绝缘转变温度附近出现极大值，表现出与氧正分La_0.9Ba_0.     

电脉冲对多晶La0.7Ca0.3MnO3比热的影响

对电脉冲诱导的不同电阻态下La_0.7Ca_0.3MnO₃样品的比热进行了研究.实验结果表明,电脉冲导致La_0.7Ca_0.3MnO₃样品比热随电阻状态发生可逆变化.比热随电阻状态的减小而减小.低温比热拟合及不同电阻状态下的比热差与温度关系说明,声子对比热的贡献不随电阻状态变化,磁性和载流子对比热的贡献是导致La_0.7Ca_0.3MnO₃样品比热变化的原因.电脉冲诱导O离子沿一维扩展性缺陷的电化学迁移,导致材料中局部区域的O离子浓度发生变化.O离子浓度的变化导致载流子浓度的变化,同时载流子浓度的变化将使得低温下磁性耦合强度发生变化,从而导致比热发生变化.     

氯化苯并咪唑镧的荧光光谱

对新合成的化合物氯化苯并咪唑镧HCl₄·[C₇H₆N₂(H₂O)₂]₂La及其LaCl₃·5H₂O的水溶液进行了三维荧光光谱测定,讨论了HCl₄·[C₇H₆N₂(H₂O)₂]₂La在不同波长的光激发下的荧光特性,荧光强度与浓度的关系及标题化合物的上转换荧光,即在540nm绿光的激发下可以获得紫外光(290nm)和近紫外光(360nm).     

掺Ba的Bi-Sr-Cu-O单晶Raman散射研究

利用Ｒａｍａｎ散射研究了Bi₂Sr_2-xBa_xCuO_y（ｘ＝０，０．２，０．４）单晶样品的声子振动性质。实验结果表明，在Bi₂Sr_2-xBa_xCuO_y体系的Ｒａｍａｎ谱中主要出现以下几个频率的特征振动模，即１９６，３００，４６０，６２５和６６０ｃｍ^－１；而频率为１９６，３００，６２５，６６０ｃｍ^－１<     

Mg(IO3)2-H2O体系的一个新物相Mg(IO3)2·2H2O和溶解度-温度相图

在Mg(IO₃)₂-H₂O体系中发现了一个新的物相二水碘酸镁Mg(IO₃)₂·2H₂O.用称重法测定了Mg(IO₃)₂,Mg(IO₃)₂·2H₂O和Mg(IO₂)₂·4H₂O的溶解度随温度变化的曲线。     

氧含量对BiFeOδ多晶陶瓷介电特性的影响

采用固相反应法制备了不同含氧量的BiFeO_δ多晶陶瓷样品，利用HP4294A阻抗分析仪测量了样品的介电特性随频率和氧含量的变化，用正电子湮没寿命谱学的方法研究了样品中因氧含量的变化所引起的结构缺陷. 实验结果表明：引入氧空位和氧填隙离子缺陷都会使介电常数减小，而介电损耗则随氧含量的增加而增加，二者的变化范围均在10%—35%之间；对不同氧含量的BiFeO_δ样品，介电常数和介电损耗随测量频率的增加而减小. 氧空位的引入使得局域电子密度变小，正电子平均寿命τ_m增加. 在氧含量δ=2.99时电子密度最大(n_e=3.90×10²³/cm³)，继续增加氧含量对正电子寿命与局域电子密度的影响不大. BiFeO_δ样品的介电常数和介电损耗随氧含量的变化可以在空间电荷限制电导的框架下来理解.     

Ba/Fe-堇青石固溶体(Ba0.05Fe0.1Mg)2Al4Si5O18的组合筛选及红外辐射性能优化

采用组合材料方法制备并筛选了具有高红外辐射性能的Ba/Fe共掺堇青石固溶体(Ba_0.05Fe_0.1Mg)₂Al₄Si₅O₁₈. 通过组合溶液喷射法,制备了7×7阵列的样品库,并在不同温度下进行热处理.通过X射线衍射、红外热成像等测试方法分析了Ba²⁺、Fe³⁺固溶对堇青石晶格畸变和红外辐射性能的影响. 经过放大制备实验的验证,确定了材料的最佳组分为5%Ba²⁺和10%Fe³⁺共固溶的堇青石. 最佳组分样品在100 oC时的红外辐射率在5-24 μm波段均高于0.8.     

用北京同步辐射光源研究氟化物闪烁体的荧光时间衰减特性

介绍了利用北京同步辐射光源测量闪烁体荧光时间结构特性的新方法.并用此方法测量了纯BaF_{2、CeF3晶体和粉晶样品及掺La³⁺、Ce³⁺的BaF2晶体时间衰减谱.对BaF2掺稀土元素的测量结果表明,La³⁺和De³⁺的掺入对BaF2时间衰减慢成分均有一定的抑制作用,但从理论上分析两种掺杂对慢成分的抑制机制并不相同.}     

烧结温度对La0.1Sr0.9TiO3陶瓷热电性能的影响

利用传统固相反应方法, 分别在1440℃, 1460℃, 1480℃和1500℃烧结条件下, 制备了钙钛矿结构的La_0.1Sr_0.9TiO₃陶瓷样品. 样品的粉末X射线衍射结果显示, 不同烧结温度的La_0.1Sr_0.9TiO₃ 陶瓷样品均为单相的正交结构. 从样品的扫描电子显微照片来看, 随着烧结温度的增加, 平均晶粒尺寸逐渐增大. 在室温至800℃的测试温区, 测试了样品的电阻率和Seebeck系数, 系统地研究了不同烧结温度对样品热电性能的影响. 结果表明, 样品的电阻率在测试温区内随着测试温度的升高先略微降低, 然后逐渐升高;总体来看, 样品的电阻率随烧结温度的升高先增大后降低. 在测试温区内, Seebeck系数均为负值, 表明样品的载流子为电子; 随着测试温度的升高, Seebeck系数绝对值均有所增大;随烧结温度升高, Seebeck系数绝对值逐渐增大后显著降低. 1480℃制备的样品因其相对较低的电阻率和相对较高的Seebeck系数绝对值, 在165℃时得到最大的功率因子21 μW·K^-2·cm^-1.     

外延生长La0.7Sr0.3MnO3薄膜厚度对缺陷影响的慢正电子分析

采用脉冲激光沉积方法在(LaAlO₃)_0:3(Sr₂AlTaO₆)_0:7衬底上外延生长了La_0.7Sr_0.3MnO₃薄膜,并采用慢正电子束方法分析了薄膜在不同厚度和不同退火气氛下参数S的变化. 分析表明,薄膜中包含两种机制引入的氧空位,分别是薄膜生长气氛中氧压偏低造成薄膜的氧缺乏和由于薄膜应变引入空位型缺陷. 当薄膜厚度较薄时,应变造成的晶格畸变化比较大,当薄膜的厚度大于11 nm时,薄膜的应变驰豫已经比较完全. 原位退火的样品中正电子主要是被氧缺乏引起的氧空位捕获. 在氧气中退火的样品,S随厚度的变化反映了应变对薄膜微结构的影响.     

Effect of lanthanum substitution on the Raman spectra of barium titanate thin films

Thin films of Ba_1−xLa_xTiO₃ on platinum substrates were synthesized using the sol–gel method for x values of 0.0, 0.03, 0.05, and 0.10, and the effect of trivalent La³⁺ substitution on the structural and dielectric properties was studied. Using X‐ray diffraction, structural analysis of these compositions revealed a slight increase in the tetragonal distortion of the unit cell with increase in La content. Accordingly, an increase in the tetragonal to cubic transition temperature T_T/C was detected by temperature‐dependent Raman spectroscopy in the range of 70–500 K. Unlike the results from Raman scattering for the La‐doped BaTiO₃ films, the dielectric measurements showed broad and diffused dielectric maxima, making the estimation of the transition temperature merely qualitative. Copyright © 2006 John Wiley & Sons, Ltd.     

Small-signal ac response of Ba1−xLaxF2+x crystals

The small-signal ac response of single crystalline Ba_1?xLa_xF_2+x solid solutions has been studied in the temperature region 300–820 K, and in the frequency range 4×10^?2–5×10⁴ Hz. At low temperatures the frequency dispersion is dominated by processes in the bulk. Apart from the bulk conductance these processes include a dielectric response determined by broad distributions of dipole-like relaxations. The increase of the static dielectric constant with increasing solute content is explained. At higher temperatures the frequency dispersion reflects interfacial phenomena. In addition to an almost ideal interface capacitance, phenomena are observed which indicate the growth of a surface layer due to a reaction between the electrolyte, and residual oxygen and/or water vapour from the ambient.     

Investigation of the effect of gamma rays on electrical properties of chlorinated poly (vinyl chloride)

Dielectric constant, dielectric loss and AC conductivity were measured, in the frequency range 100 Hz to 5 MHz in chlorinated poly (vinyl chloride) (CPVC) before and after exposure to gamma irradiation at doses between 5.0 KGy and 50.0 KGy. The frequency dependencies of ε′, ε″ and σ_AC at 30 °C were investigated. A relaxation peak in the dielectric loss and a corresponding step in the dielectric constant have been observed, in the frequency ranges 10³ Hz to 10⁴ Hz. The dielectric constant ε′, dielectric loss ε″ and AC conductivity σ_AC are also found to increase at heating up to 100 °C. In addition the effect of gamma irradiation on the frequency dependencies of ε′, ε″ and σ_AC was measured at room temperature. The gamma irradiation leads to an increase in the efficiency of soft segments. Furthermore, the DC electrical conductivity of both the irradiated and non-irradiated samples was investigated. The induced electrical conductivity and the activation energy were measured, at various temperatures, as a function of gamma dose. It was found that the gamma radiation has a definite effect on the DC conductivity of the CPVC polymer.     

Improvement in magnetic properties of La substituted BaFe12O19 particles prepared with an unusually low Fe/Ba molar ratio

In this study, effect of lanthanum substitution on the phase composition, lattice parameters and magnetic properties of barium hexaferrite has been studied in samples synthesized in ammonium nitrate melt. Samples, prepared with different lanthanum amount and having various initial Fe/(Ba+La) ratios in between 12 and 2 {(Ba_1−xLa_x)·n Fe₂O₃, where 0≤x≤1 and 1≤n≤6)}, are sintered at temperatures from 800 to 1200 °C. The lattice parameters, both a and c, decreases with increasing La amount which results in a decrease of the unit cell volume. The scanning electron microscope micrographs show that the pure and La-substituted sample with x=0.3, both calcinated at 1000 °C, have grain sizes smaller than 1 μm. The coercivities of the La-substituted samples increase with increasing La amount and reaches to a maximum value of 5.73 kOe, when x=0.3. Sintering at higher temperatures (above 1000 °C) decreases the coercivity, resembling a transition from single to multi-domain behavior of the particles, while saturation magnetization of the samples continues to increase due to the increasing grain size. Magnetization measurements of the samples prepared with different Fe/(Ba+La) molar ratios, n's, revealed that the specific saturation magnetization slightly increases with decreasing n, while coercivities fluctuates around 5.5 kOe. However, a sharp increase in the saturation magnetization has been observed in the sample having n=1 and washed in HCl. It was measured as 59.2 emu/g at 15 kOe, which is higher than that of the pure sample (57.5 emu/g). Thus, the magnetic parameters are optimized in the sample Ba_0.7La_0.3Fe₁₂O₁₉ so as to maximize both coercivity and specific saturation magnetization in the HCl-washed sample synthesized by starting with an unusually low Fe/(Ba+La) molar ratio of 2 (or n=1).     

Cation disorder and size effects on the magnetic transition in Ba-containing ferromagnetic manganites

The results of ⁵⁵Mn NMR, dc magnetization, and ac susceptibility studies are presented for La_0.7Ca_0.15Ba_0.15MnO₃, La_0.7Sr_0.15Ba_0.15MnO₃, and La_0.7Ba_0.3MnO₃ ferromagnetic manganites. While is a function of the mean radius of the La and alkaline-earth ions and the cation disorder, the form of the temperature dependence of the magnetic moment may be expressed as function of only. The phase transition is continuous for all three compounds. Received 5 March 1999     

Crystal chemical and dielectric study of niobochromates with the tungsten bronze structure

Abstract

A crystal chemical study has allowed us to identify new niobochromates crystallizing with the tungsten bronze structure: Ba₂LnNb₄CrO₁₅ (Ln = Bi, La), La₂ANb₄CrO₁₅ (A = Li, Na, K) and Ba₂Na_1-x La _x Nb_5-x Cr _x O₁₅ (0 ? x ? 1). A dielectric study has shown that the T _c (x) curve goes through a minimum at x ? 0.5 along the solid solution Ba₂Na_1-x La _x Nb_5-x Cr _x O₁₅, while the ferroelastic transition T_c changes very slightly in the same range of composition.     

Ferroelectric and optical properties of Ba6Ti2Nb8O30 single crystals

The dielectric, optical and non-linear optical properties of Ba₆Ti₂Nb₈O₃₀ single crystals were examined from room temperature up to the Curie temperature of 245°C. The spontaneous polarization at room temperature was estimated as 0·22±0·01 C/m². The linear electrooptic constants were measured as r₃₃^T=(1·17±0·02)×10^?10 and r₁₃^T=(0·42±0·01)×10^?10 m/V. The non-linear optical coefficients were d₃₃=(15·1±2·0)×10^?12 and d₃₁=(11·0±2·0)×10^?12 m/V, which are comparable to those of Ba₄Na₂Nb₁₀O₃₀. Temperature dependences of δ₃₃ and δ₃₁ (Miller's δ) were found to be proportional to that of P_s.     

Metal-oxide-semiconductor characteristics of lanthanum cerium oxide film on Si

Metal-organic decomposed lanthanum cerium oxide (La _x Ce _y O _z ) film had been spin-coated on n-type Si substrate. Effects of post-deposition annealing temperature and time on the metal-oxide-semiconductor (MOS) properties of the film were studied. As temperature increased from 400 to 1000°C for 15 minutes dwell time, La _x Ce _y O _z demonstrated a decrease in interface trap density (D _it) and total interface trap density (D _total), which were related to the formation of SiO _x /silicates interfacial layer (IL). The lowest leakage current density and highest dielectric breakdown voltage (V _B) was obtained in 1000°C-annealed sample. When longer annealing times (30–120 minutes) were studied on the 1000°C-annealed sample, the sample annealed at 1000°C for 120 min showed the best MOS characteristics with V _B of 30 V. Reasons contributing to such observation were discussed.     

Capacitance of the La0.67Sr0.33MnO3/(Ba,Sr)TiO3 interface induced by electric field penetration into the manganite electrode

(001)La_0.67Sr_0.33MnO₃/(001)(Ba_xSr_{1 ? x} TiO₃/(001)La_0.67Sr_0.33MnO₃(x= 0–0.25) three-layer heterostructures are grown by laser evaporation on (001)La_0.3Sr_0.7Al_0.65Ta_0.35O₃ single-crystalline substrates. In a wide temperature range (≈150 K), effective permittivity ? of (1000 nm)Ba_0.25Sr_0.75TiO₃ and (1000 nm)SrTiO₃ films grown obeys the relationship ? ～ (T ? T _CW)^?1, where T _CW is the Curie-Weiss temperature for related bulk crystals. Using experimental dependences ?(T), the capacitance of the (001)La_0.67Sr_0.33MnO₃/(001)Ba_xSr_1?x TiO₃ and (001)La_0.67Sr_0.33MnO₃/(001)SrTiO₃ interfaces, which is due to electric field penetration into the manganite electrode, is estimated (C _int≈4μF/cm²). At bias voltages of ± 2.5 V, the change in the permittivity of the STO and BSTO films in the heterostructures studied reaches 25 and 45%, respectively.     

Dielectric response of Ba0.75Sr0.25TiO3 epitaxial films to electric field and temperature

The structure and dielectric parameters of the intermediate ferroelectric layer in the (001)SrRuO₃ ∥ (100)Ba_0.75Sr_0.25TiO₃ ∥ (001)SrRO₃ heterostructure grown by laser ablation on (001)La_0.294Sr_0.706Al_0.647Ta_0.353O₃ were studied. Tensile mechanical stresses accounted for the polar axis in the ferroelectric, being oriented predominantly parallel to the substrate plane. The remanent polarization in the Ba_0.75Sr_0.25TiO₃ layer increased approximately linearly with decreasing temperature in the interval 320–200 K. The real part of the dielectric permittivity of the intermediate ferroelectric layer reached a maximum ?′/?₀=4400 at T _M≈285 K (f=100 kHz). The narrow peak in the temperature dependence of the dielectric loss tangent for the Ba_0.75Sr_0.25TiO₃ ferroelectric layer, observed for T<T _M, shifted toward lower temperatures with decreasing frequency and increasing bias voltage applied to the electrodes.