等离子体噻吩聚合膜的研究及I~ 注入的掺杂效应

以噻吩为单体,在等离子体环境中聚合成致密的有机膜。利用Rutherford背散射(RB2S)和质子弹性反冲(ERD)、傅里叶红外谱(FTIR)测定了膜的成分和结构;从近红外-可见-紫外光的反射和透射谱,运用传递矩阵方法研究了膜的光学性质;此外,还探讨了24keV的I~ 离子束的注入对等离子体噻吩聚合膜的掺杂效应。结果表明,注入层内电荷载流子的输运机理可用Mott的可变自由程跳跃(VRH)理论给以解释。     

类金刚石膜不同能量下的离子注入

本文对等离子体气相沉积法制备的类金刚石膜(a-C:H)进行了离子注入研究。注入剂量固定为5×10⁵Ar/cm²,注入能量分别为50,100,140和180keV。离子注入前后分别作了红外吸收谱,Raman谱,光学能隙,氢含量和电阻率的测量。结果表明,注入离子破坏了膜中的C—H键,sp²和sp³态都减少,而(sp²/sp³)比值增大;光学能隙E_opt,电阻 关键词：     

杂环有机锡化合物的谱学表征

合成了八个杂环芳基正丁基有机锡化合物,它们的通式是RnSnBu_(4-n)(R=2-呋喃基或2-噻吩基,n=l,2,3;R=2-(N-甲基)吡咯基或2-吡啶基,n=l)。其中二正丁基-二(2-呋喃基)锡、正丁基-三(2-呋喃基)锡、二正丁基-二(2-噻吩基)锡和正丁基-三(2-噻吩基)锡是新化合物。这些化合物都经过了元素分析和¹H、¹³C和¹¹⁹Sn NMR及IR谱表征,文中重点讨论了它们的谱学特征。     

铕、铽-2-噻吩甲酸-2,2′-联吡啶配合物的合成、表征及荧光性质研究

合成了铕、铽-2-噻吩甲酸的二元配合物和铕、铽-2-噻吩甲酸-2,2′-联吡啶的三元配合物,并对它们进行了元素分析、稀土络合滴定、摩尔电导测定,确定了配合物组成分别为REL₃·2H₂O及REL₃ L′·C₂H₅OH(RE=Eu,Tb; L=2-噻吩甲酸、L′=2,2′-联吡啶), 测定了配体及配合物的IR谱、1H NMR谱及荧光光谱。IR谱和1H NMR谱测定表明,配体2-噻吩甲酸羧基氧、配体邻菲咯啉2个氮原子与稀土离子配位。荧光光谱实验表明,高氯酸铕和高氯酸铽分别与2,2′-联吡啶和2-噻吩甲酸反应形成的三元配合物的荧光明显强于二元配合物。     

电化学法制备高密度导电聚吡咯的性能研究

系统地研究了溶剂、温度和聚合电流密度对电化学制备本征导电聚吡咯 (PPy)膜密度的影响,分别用四探针法和热失重(TG)法研究了不同密度的PPy膜的电导率和热稳定性.用循环伏安法(CV)和电化学阻抗谱(EIS)法比较了不同密度的PPy膜的电化学性能.研究表明,在室温下,在乙氰/水(AN/H₂O, 99/1)溶液比在水溶液中容易得到高密度的PPy膜.高聚合电流密度(如10mA/cm²)可以进一步提高PPy膜的密度,用X射线光电子能谱(XPS)对其结构进行了分析.在AN/H₂O(99/1)溶液中用小电流密度(0.1mA/cm²)聚合时,低温(-20℃)有利于提高PPy膜的密度;然而在高电流密度(10mA/cm²)时, 低温(-20℃)不利于提高PPy膜的密度.高密度的PPy膜(1.42g/cm³)用电流密度10mA/cm²在0℃的AN/H₂O(99/1)溶液中制得.该合成方法和常用的低温低电流密度方法制备高密度的PPy膜相比, 合成时间短,条件易实现,更利于实用化.更重要的是,高密度的PPy膜不仅具有高电导率(～220S/cm)和高热稳定性,还具有低的电化学活性.因此,高密度的PPy膜不仅是一种优异的电子导电的电极材料,而且是一种潜在的优异的防腐材料. 关键词： 聚吡咯膜 密度 电导率 热稳定性     

背散射方法研究金属中注入轻离子分布

用能量为MeV量级的α粒子背散射方法测定了大剂量N⁺ (5×10¹⁷ atom/cm²,100keV)注入铁膜(厚约4000?)及铁块(工业纯)的注入离子的浓度-深度分布。由于大剂量杂质的注入,使基体背散射谱出现“凹坑”,提出了一种利用“凹坑”计算杂质分布的方法。 关键词：     

微波多普勒反射计数据分析的一种优化方法

结合对多普勒频谱的分析,提出一种基于双高斯拟合的轴对称-非对称谱(SAS)分析方法。在此方法下,功率谱主要由轴对称功率谱和非轴对称功率谱两部分组成。前者主要由等离子体截止层密度的扰动调制决定,后者主要由波数为k _⊥=2k₀sinθ 的湍流的极向密度扰动决定。在分析多普勒反射计的数据时,相较于常用的频谱重心(COG)分析方法和相位微分(δ-phase)法,SAS 谱分析不仅提高了求取多普勒频移的准确性,同时还可以获取等离子体中波数为k_⊥ 的极向湍流的密度扰动强度和截止层的密度扰动强度。     

大气压等离子体炬电子密度的光谱诊断

利用空心针-板放电装置产生了大气压等离子体炬,采用光谱法测量了其内部及表面的电子密度. 向空心针中通入氩气,在大气环境中产生了长度为1cm的等离子体炬.实验分别测量了Hα谱线和ArⅠ(696.54nm)谱线,通过反卷积方法分离出其相应的Stark展宽,并由此计算了电子密度.结果发现,采用Hα谱线和ArⅠ(696.54nm)谱线Stark展宽计算得到的等离子体的电子密度分别为1.0×10¹⁵cm^－3和3.78×10^{15关键词： 等离子体炬 电子密度 气体温度 Stark展宽}     

高气压MPCVD沉积金刚石的光谱研究

采用微波等离子体化学气相沉积方法(microwave plasma chemical vapor deposition, MPCVD)在高沉积气压(34.5 kPa)下制备多晶金刚石,利用发射光谱(optical emission spectroscopy, OES)在线诊断了CH₄/H₂/O₂等离子体内基团的谱线强度及其空间分布,并利用拉曼(Raman)光谱评价了不同O₂体积分数下沉积出的金刚石膜质量,研究了金刚石膜质量的均匀性分布问题。结果表明：随着O₂体积分数的增加,C₂, CH及H_α基团的谱线强度均呈下降的趋势,而C₂,CH与H_α谱线强度比值也随之下降,表明增加O₂体积分数不仅导致等离子体中碳源基团的绝对浓度下降,而且碳源基团相对于氢原子的相对浓度也降低,使得金刚石的沉积速率下降而沉积质量提高。此外,具有刻蚀作用的OH基团的谱线强度却随着O₂体积分数的增加而上升,这也有利于降低金刚石膜中非晶碳的含量。光谱空间诊断发现高沉积气压下等离子体内基团分布不均匀,特别是中心区域C₂基团聚集造成该区域内非晶碳含量增加,最终导致金刚石膜质量分布的不均匀。     

氦气对MPCVD沉积金刚石的影响

为了确定添加氦气对微波等离子体化学气相沉积(MPCVD)金刚石膜的影响,采用发射光谱法(OES)在线诊断了CH₄-H₂-He等离子体的发射光谱特性,研究了He对等离子体内基团空间分布的影响;并利用扫描电子显微镜(SEM)和拉曼(Raman)光谱对不同He体积分数下沉积出的金刚石膜进行了表征。结果表明：随着He体积分数的增加,等离子体内H_α, H_β, H_γ, CH和C₂基团的谱线强度均呈上升趋势,其中H_α基团的谱线强度增加最大。光谱空间诊断发现He的加入导致等离子体中各基团的空间分布均匀性变差,造成沉积出的金刚石膜厚度极不均匀。沉积速率测试表明,He的加入导致碳源基团相对浓度增加,有利于提高薄膜的沉积速率,当He体积分数由0 vol.%增加至4.7 vol.%时,沉积速率提高了24%。SEM测试结果表明,随着He体积分数的增加,金刚石膜表面形貌由(111)晶面取向向晶面取向混杂转变,孪晶生长明显。高He(4.7 vol.%)体积分数下由于C₂基团的相对浓度较高,导致二次形核密度增加。此外,由于基片台受到等离子体的刻蚀和溅射作用,导致薄膜沉积过程中引入了金属杂质原子。二次形核和杂质原子的存在使得孪晶大量的产生,薄膜呈现出压应力。     

The interactions of thiophene with polycrystalline UO2

We have studied the adsorption and desorption of thiophene on polycrystalline UO₂ as function of coverage, over the temperature range 100-640 K, using X-ray photoelectron spectroscopy (XPS), temperature programmed desorption (TPD) and electron stimulated desorption (ESD). Thiophene is found to adsorb molecularly on stoichiometric UO₂. C 1s and S 2p XPS spectra are measured at different thiophene exposures and at different temperatures; they show no evidence for the presence of dissociation fragments, confirming that thiophene adsorbs and desorbs molecularly on a polycrystalline stoichiometric UO₂ surface. The variation of the S 2p and C 1s intensity as function of exposure, together with ESD measurements of O⁺ as function of exposure, can be connected to the growth mode of a thiophene film on UO₂; the thiophene film converts from a flat-lying configuration to an inclined structure as coverage increases. The effects of X-rays, UV, and electron irradiation on thiophene films have been studied in two different coverage regimes, monolayer and multilayer. Irradiation leads to a modification of thiophene films, and appreciable concentrations of species stable to 640 K are present on the surface for both regimes. The XPS results suggest that irradiation induces polymerization and oligomerization, as well as formation of thiolates and dissociation fragments of thiophene. The adsorption and reactivity of thiophene on defective UO₂ surfaces have also been studied. The O vacancies and defects in the oxide surface cause cleavage of C-H and C-S bonds leading to the dissociation of thiophene at temperatures as low as 100 K. These results illustrate the important role played by O vacancies in the chemistry of thiophene over an oxide surface.     

Charge-carrier dynamics in polythiophene films studied by in-situ measurement of flash-photolysis time-resolved microwave conductivity (FP-TRMC) and transient optical spectroscopy (TOS)

An in-situ measurement system for flash-photolysis time-resolved microwave conductivity (FP-TRMC) and transient optical spectroscopy (TOS) has been developed to perform simultaneous measurements of photo-induced changes in conductivity and charge-carrier density in an organic thin film. The electric field in the resonant cavity designed for the present system was analysed by electrostatic simulation. Using the present system and the simulated electric field, the photoconductivity and transient absorption in a regioregular poly(3-hexyl thiophene) film were measured using one particular geometry under photon excitation energies of 6.39, 4.98, 3.48, and 2.34?eV. The dynamics of photogenerated charge carriers is discussed in terms of the excitation energy and incident photon intensity. The transient absorption spectrum induced by 3.48?eV light is presented and compared with the TRMC transient.     

Characterization of poly (3-methyl thiophene) thin films prepared by modified chemical bath deposition

Poly (3-methyl thiophene) thin films were prepared by chemical bath deposition technique on glass substrate; the prepared thin films were characterized for structural, morphological and optical properties. The variation in the oxidant concentration has an influence on the properties of the P3MeT thin films. The increase in the oxidant concentration leads to increase in the thickness of the film. The binding energy increases due to increase in oxidation concentration. The P3MeT thin films show smooth surface morphology with increase in oxidant concentration whereas the contact angle of the thin film decreases with increase in oxidant concentration. The optical absorbance of these thin films was found to increase with decrease in the optical band gap due to increase in oxidant concentration.     

Thickness dependent optical dispersion parameters and nonlinear optical properties of nanostructured Cr doped CdO thin films

Cr doped CdO thin films were deposited on glass substrates by reactive DC magnetron sputtering with varying film thickness from 250 to 400 nm. XRD studies reveal that the films exhibit cubic structure with preferred orientation along the (2 0 0) plane. The optical transmittance of the films decreases from 92 to 72%, whereas the optical energy band gap of the films decreased from 2.88 to 2.78 eV with increasing film thickness. The Wemple–DiDomenico single oscillator model has been used to evaluate the optical dispersion parameters such as dispersion energy (E_d), oscillator energy (E_o), static refractive index (n_o) and high frequency dielectric constant (ε_∞). The nonlinear optical parameters such as optical susceptibility (χ⁽¹⁾), third order nonlinear optical susceptibility (χ⁽³⁾) and nonlinear refractive index (n₂) of the films were also determined.     

Fabrication and characterization of polyethylene terephatate optical waveguides

In this paper, the fabrication and characterization of polyethylene terephatate (PET) thin film integrated optical waveguide is presented. Dip-coating technique has been used to fabricate the optical waveguide using PET. Various waveguide properties, such as mode effective refractive index, optical loss, dispersion and waveguide thickness as a function of temperature of waveguides have been reported. The optical loss are found to be <1 dB cm^–1.     

沉积在液体衬底上连续铝薄膜的微观结构

研究了沉积在硅油衬底表面的连续铝薄膜的微结构及其表面形貌.与沉积在单晶硅表面的铝薄膜相比,两种铝薄膜均属颗粒结构,但硅油表面的铝薄膜具有颗粒尺寸较小、大小不均匀,表面起伏较大等特点,而且在该铝薄膜边缘的下表面,有一明显的波纹状楔型结构,其斜率仅为10^-4—10^-5.实验结果表明：这一现象是由于液体衬底的热膨胀行为引起的.此外对样品的晶态也进行了研究. 关键词： 铝薄膜 液体衬底 微观结构     

Molecular orientation and morphology of contact printed α-quaterthiophene films on gold

We present contact printing as a technique to deposit α-quaterthiophene (α-4T) films from the solid phase onto gold. The molecular orientation and morphology of both the printed film and the original polycrystalline α-4T film on silica were investigated with low energy ion scattering (LEIS), atomic force microscopy (AFM), X-ray diffraction (XRD) and optical microscopy. We show that the strong interaction between clean gold and α-4T induces a drastic change in the molecular orientation and morphology of a 380 nm thick α-4T film. On gold the α-4T molecules are orientated with the thiophene rings parallel to the substrate and form rod-like crystallites (typically 13×1.3 μm²), whereas on silica α-4T molecules stand almost upright and form large cobblestone-like crystallites (typical diameter 10 μm). Exposure of α-4T to a low energy ion beam (dose <1×10¹⁴ 3 keV ³He⁺ ions/cm²) prior to printing causes polymerisation, which decreases the ability to print and alters the morphology of the printed film.     

Physical and dispersive optical characteristics of ZrON/Si thin-film system

To date, the complex evaluation of physical and dispersive optical characteristics of the ZrON/Si film system has yet been reported. Hence, ZrON thin films have been formed on Si(100) substrates through oxidation/nitridation of sputtered metallic Zr in N₂O environment at 500, 700, and 900 ^°C. Physical properties of the deposited films have been characterized by X-ray diffractometry (XRD), Fourier transform infrared (FTIR) spectroscopy, reflection high-energy electron diffraction (RHEED), and spectroscopic ellipsometry (SE). It has been shown that ZrON/Si thin films without optical absorption can be prepared by oxidation/nitridation reaction in N₂O environment at 700–900 ^°C.     

Emission Spectra of Tb3+:PVA Polymer Films

This paper reports on the development and optical analysis of Tb³⁺‐doped polyvinyl alcohol (PVA) films. A reference PVA film has also been prepared for which X‐ray diffraction (XRD) spectral profile has been carried out; it was found that this polymer possesses a semi crystalline nature. Spectral analysis of the Tb³⁺:PVA polymer film has been made based on the measurement of the excitation, emission, and decay curves of the emission transitions (⁵D₄→⁷F₆,_5,4&3). Under a UV source (254 nm), a bright green emission was noticed from the surface of Tb³⁺:PVA film. The current study reveals that this terbium polymer film could be suggested as a novel green luminescent material.     

一氧化碳分立跃迁的光学振子强度和微分散射截面研究

在电子入射能量1500eV、平均散射角为0°和能量分辨为60meV条件下，得到了一氧化碳在7—21eV能量区间的绝对光学振子强度密度谱，获得了电子态A¹Π，B¹Σ⁺，C¹Σ⁺及E¹Π的各振动能级的绝对光学振子强度，通过与已发表的各实验和理论数据作比较，分析了差异的原因，并讨论了偶极(e,e)方法确定光学振子强度的局限性.同时还给出在电子入射能量1500eV时上述四个电子态的各 关键词：