Y2O3-Eu2O3-SnO2三元系固相线下相关系及其发光性质研究

采用固态反应法及改良固态反应法合成了一系列Y₂O₃-Eu₂O₃-SnO₂体系中的试样，利用X射线粉末衍射法测定了Y₂O₃-Eu₂O₃-SnO₂三元系固相线下的相关系.结果表明，Y₂O₃-Eu₂O₃二元系 关键词： 2O₃-Eu₂O₃-SnO₂三元系')" href="#">Y₂O₃-Eu₂O₃-SnO₂三元系 烧绿石型结构 激发光谱 发射光谱     

Li2O-(LiCl)2-B2O3-Al2O3系统玻璃的Raman光谱研究

我们用Raman光谱研究了Li₂O(LiCl)₂B₂O₃-Al₂O₃系玻璃的结构,着重研究了Al₂O₃的影响。对于Li₂O-B₂O₃系玻璃,Li₂O含量增加使玻璃中存在的BO₃三角体转变为BO₄四面体, 关键词：     

BaB2O4低温相单晶体的生长及其相关体系相图的研究

本文用差热分析和X射线衍射等方法研究了BaO-Na₂O-B₂O₃三元系的两个截面:BaB₂O₄-Na₂B₂O₄和BaB₂O₄-Na₂O赝二元系的相平衡关系。BaB₂O₄-Na₂B₂O₄属共晶体系,其共晶温度为826±3℃。在BaB₂O₄-Na₂O体系中发现一个新化合物BaB₂O₄·Na₂O,该化合物在846±3℃同成分熔化。BaB₂O₄·Na₂O对BaB₂O₄和Na₂O均为共晶体系,其共晶温度分别为755±3℃和573±3℃。并根据所得的结果,分别以15mol％Na₂O和13mol％Na₂B₂O₄为助熔剂,用提拉法培养出2×4×6mm³和2×4×8mm³的低温相BaB₂O₄单晶体。 关键词：     

SrNb2O6-NaNbO3-LiNbO3赝三元系相图的研究

本文用X射线衍射、热处理及差热分析等方法测定了SrNb₂O₆-NaNbO₃-LiNbO₃赝三元系的室温截面及相应的SrNb₂O₆-NaNbO₃,SrNb₂O₆-LiNbO₃和NaNbO₃-LiNbO₃等三个赝二元系相图;粗略地研究了Sr_0.42Na_0.16NbO₃-LiNbO₃系的纵截面;含5mol％LiNbO₃及10mol％LiNbO₃的SrNb₂O₆-NaNbO₃的纵截面。确定了室温Sr₂Na(NbO₃)₅(以下略为S₂N)相为四方钨青铜结构。其点阵常数为a=12.36?,c=3.906?.LiNbO₃在S₂N相内的溶解度可达～10mol％,当LiNbO₃含量超过5mol％时,S₂N相畸变为S₂N′相。S₂N′相为正交晶系。实验确定室温S₂N(S₂N′)相系亚稳相。在900-1100℃长时间退火即分解为SrNb₂O₆和以NaNbO₃为基的固溶体的混合物。 关键词：     

BaO-Li2O-B2O3三元系中BaB2O4-Li2B2O4和BaB2O4-Li2O截面相平衡关系的研究

本文用X射线和差热分析方法对BaO-Li₂O-B₂O₃三元系中的两个截面:BaB₂O₄-Li₂B₂O₄和BaB₂O₄-Li₂O作了研究。在BaB₂O₄-Li₂B₂O₄赝二元系中发现了一个新的化合物4BaB₂O₄·Li₂B₂O₄。化合物在930±3℃由包晶反应形成,并与Li₂B₂O₄形成共晶反应。共晶温度为797±3℃,共晶点组分为79mol％Li₂B₂O₄。在BaB₂O₄-Li₂O截面中也存在化合物4BaB₂O₄·Li₂B₂O₄,其包晶反应温度从930±3℃随Li₂O含量增加下降到908±3℃。在组分60mol％Li₂O处形成另一个新的化合物2BaB₂O₄·3Li₂O。该化合物在630±3℃也是由包晶反应形成,并与Li₂O和Li₂CO₃分别形成共晶反应,共晶温度分别为400±3℃和612±3℃。在BaB₂O₄-Li₂B₂O₄和BaB₂O₄-Li₂O体系中都没有观察到固溶体。用计算机程序分别对化合物4BaB₂O₄·Li₂B₂O₄和2BaB₂O₄·3Li₂O的X射线粉末衍射图案进行了指标化,其结果:4BaB₂O₄·Li₂B₂O₄的空间群为Pmma,a=13.033?,b=14.630?,c=4.247?,每个单胞包含两个化合式单位;2BaB₂O₄·3Li₂O的空间群为Pmmm,a=4.814?,b=9.897?,c=11.523?,每个单胞也含有两个化合式单位。 关键词：     

Er3+掺杂SiO2复合的Al2O3粉末结构及光致发光特性

采用溶胶-凝胶(sol-gel)工艺制备0.1 mol% Er³⁺掺杂Al₂O₃体系和SiO₂-Al₂O₃复合体系粉末. 实验结果表明：5 mol%的SiO₂复合加入Al₂O₃抑制γ→θ和θ→α相转变. 掺0.1 mol%Er³⁺:Al₂O₃体系粉末，900℃烧结，在1.47—1.63μm波段内光致发光(PL)谱为中心波长1.53 μm、半高宽56 nm的单一宽峰，1000—1200℃烧结，劈裂为多峰PL谱. 掺0.1 mol%Er³⁺:SiO₂-Al₂O₃复合体系粉末，在高达1200℃烧结，仍保持中心波长1.53 μm的单一宽峰PL谱，由于—OH更完全的脱除，PL强度较900℃烧结Al₂O₃体系，SiO₂-Al₂O₃复合体系均提高1个数量级. 关键词： 2-Al₂O₃复合体系')" href="#">SiO₂-Al₂O₃复合体系 掺铒 溶胶-凝胶工艺 光致发光     

BaB2O4-K2O和BaB2O4-K2B2O4赝二元系相图的研究

用X射线衍射和差热分析方法研究了BaB₂O₄-K₂O和BaB₂O₄-K₂B₂O₄赝二元系的相平衡关系。BaB₂O₄-K₂B₂O₄属共晶体系,共晶温度为850±3℃,共晶点成分为45mol％K₂O。在Ba 关键词：     

Y3-xBixFe5O12的晶体生长

本文讨论了Y₂O₃-Fe₂O₃-Bi₂O₃-PbO·0.2B₂O₃赝四元系相图的得出与运用;用Bi₂O₃-PbO-B₂O₃做助熔剂,获得了磁性石榴石Y_3-xBi_xFe₅O₁₂单晶(0≤x≤1.2);还论述了Bi-YIG晶体内Bi含量与助熔剂熔液成份的关系。 关键词：     

Bi离子掺杂GeO2-Al2O3-M(M=Na2O，BaO，Y2O3)玻璃的光学性质

用高温熔融法制备了Bi离子掺杂浓度为1mol%的GeO-B₂O₃-Na₂O (GBNB)，GeO₂-Al₂O₃-Na₂O(GANB)，GeO₂-Al₂O₃-BaO(GABB)和GeO₂-Al₂O₃-Y₂O₃(GAYB)玻璃.测定了样品玻璃的差热曲线、吸收、发射光谱及荧光衰减曲线.实验发现GBNB，GANB，GAYB，GABB的吸收边带逐步发生红移.由于这些吸收边带是由Bi³⁺的6s²电子到Bi⁵⁺ 6s⁰空轨道的跃迁引起.因此推断GBNB，GANB，GAYB，GABB玻璃中Bi⁵⁺离子的含量逐步增加.在GABB，GAYB，GANB三个样品中观察到发光中心约1220nm超宽带荧光发射.荧光强度从GABB，GAYB，GANB逐步减弱，荧光半高宽和荧光寿命逐步变小.这些超宽带的荧光归属为Bi⁵⁺离子的发光所致.从吸收与荧光光谱的变化，推断在GeO₂-Al₂O₃玻璃中引入BaO，Y₂O₃组分有利于Bi⁵⁺离子的形成.讨论了BaO，Y₂O₃化学组分对Bi离子在玻璃中的价态影响的内在机理. 关键词： 5+离子')" href="#">Bi⁵⁺离子 超宽带发光 吸收带 荧光寿命     

Y2O3·Cr2O3复合氧化物热力学性质的研究

在1182—1386K温度范围内,用固体电解质氧浓差电池:Mo|Cr,Y₂O₃,Y₂O₃·Cr₂O₃|ZrO₂(+MgO)|Cr,Cr₂O₃|Mo测定了复合氧化物Y₂O₃·Cr₂O₃的热力学性质。对于反应Y_{2关键词：}     

ZnO压敏陶瓷中缺陷的介电谱研究

从理论上证明了介电松弛过程在介电谱上等效于电子松弛过程,认为室温下10⁵Hz处特征损耗峰起源于耗尽层处本征缺陷所形成的电子陷阱.在-130—20℃范围内测量了三种配方ZnO陶瓷的介电频谱,发现ZnO压敏陶瓷室温下10⁵Hz处的特征损耗峰在低温下分裂为两个特征峰,认为它们起源于耗尽层中的本征缺陷(锌填隙或/和氧空位)的电子松弛过程.发现ZnO-Bi₂O₃二元系陶瓷特征峰仅仅由锌填隙引起,而ZnO-Bi_{2关键词： ZnO压敏陶瓷 本征缺陷 介电谱 热处理}     

Varistor and dielectric properties of Cr2O3 doped SnO2–Zn2SnO4 composite ceramics

Cr₂O₃ doped SnO₂–Zn₂SnO₄ composite ceramics were prepared by traditional ceramic processing and the varistor, dielectric properties were investigated. With increasing Cr₂O₃ content, the breakdown electrical field E_B increases from 11 to 92 V/mm and the relative dielectric constant ε_r measured at 1 kHz, 50 °C decreases from 11,028 to 3412, respectively. The barrier height ?_B about 0.8–0.84 eV and the decreasing of SnO₂ grain size suggest that the varistor behavior with high ε_r is originated from SnO₂–SnO₂ or SnO₂–Zn₂SnO₄ grain boundary. In the dielectric spectra lower than 1 kHz, a dielectric peak is presented and depressed with increasing bias voltage. Similarly, at high temperature, the dielectric constant also presents a dielectric peak in the temperature spectra and the peak becomes faint with increasing frequency. The exhibition of the dielectric peak is thought to be attributed to the conduction of grain boundary since it is accompanied by the sharp increase of dielectric loss. In addition, a dielectric relaxation with the activation energy about 0.4–0.5 eV was observed in the temperature range of 20–100 °C. Based on the results, the formation mechanism of Schottky barriers at grain boundaries and the varistor behavior with high dielectric constant are well understood.     

ZnO-Bi2O3-Sb2O3-BaO系陶瓷的晶界相与抗退降性能

在通常的ＺｎＯ－Ｂｉ₂Ｏ₃－Ｓｂ₂Ｏ₃系电压敏陶瓷中，加入能构成压敏特性的钡添加剂，发现除已知的Ｂｉ₂Ｏ₃和Ｚｎ_2．３３Ｓｂ_０．６７Ｏ₄晶界相以外，还出现新的晶界相，分析表明是固溶有微量其它成分的偏锑酸钡（ＢａＳｂ₂Ｏ₆）晶相。同时还发现，ＢａＳｂ_{2关键词：}     

Effects of excess Bi2O3 on grain orientation and electrical properties of CaBi4Ti4O15 ceramics

A CaBi₄Ti₄O₁₅ (CBTO) ceramic in which the Bi₂O₃ concentration was controlled from 0 to 10 wt% was fabricated using a solid-state reaction method. Structural analysis by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) indicated differences in the preferred grain orientation and size of the plate-like grains according to the Bi₂O₃ concentration. The orientation of plate-like grains was also found to vary with the Bi₂O₃ concentration. There was no noticeable change trend of dielectric properties with different Bi₂O₃ concentrations. Relatively low dielectric constants (about 135) were exhibited by the CBTO ceramic with 1 wt% Bi₂O₃ and CBTO ceramic with 10 wt% Bi₂O₃ only, and similar values (about 150) were exhibited by the other ceramics. The dielectric loss exhibited a low value in the range of 0.01–0.09 for all samples (frequency range of 1–100 kHz). Regarding the ratio changes of the piezoelectric coefficient (d₃₃) and the ratio of a-axis orientation of plate-like grains, the trends of these two values were shown to be similar. These results suggest that the addition of Bi₂O₃ greatly influences the microstructure of CBTO ceramics, including the grain size and orientation of plate-like grains. In particular, the change in the preferred grain orientation is closely related to the change in the piezoelectric properties.     

Effect of excess Bi2O3 on the electrical properties and microstructure of (Bi1/2Na1/2)TiO3 ceramics

(Bi_1/2Na_1/2)TiO₃ ceramics (BNT) with 0–6 mol% of excess Bi₂O₃ are prepared by conventional solid-state sintering. The electrical properties of the samples are examined. The addition of excess Bi₂O₃ reduces the leakage current of BNT ceramics significantly, thus facilitating the poling process, and improves their piezoelectric properties slightly for certain amounts of added Bi₂O₃. BNT ceramics have very high dielectric constants and dissipation factors at low frequency and high temperature due to their high conductivity. Adding excess Bi₂O₃ to BNT ceramics affects their dielectric behavior and phase transition temperatures. Grain growth is suppressed by adding Bi₂O₃ and no second phase is observed for BNT ceramics with up to 6 mol% of excess Bi₂O₃ added.     

Structural and electric properties of Bi2Zn2/3Nb4/3O7 thin films prepared by pulsed laser deposition

Bi₂Zn_2/3Nb_4/3O₇ thin films were deposited on Pt/TiO₂/SiO₂/Si(100) substrates under an oxygen pressure of 10 Pa by pulsed laser deposition. The substrate temperature varied from 500 ^°C to 750 ^°C. Effects of substrate temperature on the crystallinity, microstructure, and electric properties of Bi₂Zn_2/3Nb_4/3O₇ thin films have been systematically investigated. Bi₂Zn_2/3Nb_4/3O₇ thin films are amorphous in nature at a substrate temperature of 500 ^°C. With increase of substrate temperature to 550 ^°C, thin films begin to crystallize. At higher temperature of 750 ^°C, Bi₂O₃ phase can be detected in thin films. However, the crystallized thin films exhibit a cubic pyrochlore structure, not a monoclinic zirconolite structure, which is probably attributed by the composition deviation from the stoichiometric ratio. The resultant Bi₂Zn_2/3Nb_4/3O₇ thin films exhibit the character with high dielectric constant and low loss tangent. The dielectric constant gradually increases with the substrate temperature and reaches a maximum at 700 ^°C. The dielectric constant and loss tangent of the thin films deposited at 700 ^°C are 152 and 0.002 at 10 kHz, respectively. With further increase of substrate temperature to 750 ^°C, the dielectric constant decreases to 128. However, the tunability of the resultant thin films disappears, and the temperature coefficients are positive, which implies a more ordered structure in thin films.     

Study of glasses and glass ceramics in Bi2O3-GeO2-Fe2O3 and Bi2O3-GeO2-Cr2O3 systems by optical spectroscopy

The ferroelectric Bi₂GeO₅ crystalline phase is synthesized by heat treatment of 1Bi₂O₃-1GeO₂-xFe₂O₃ and 1Bi₂O₃-1GeO₂-yCr₂O₃ glasses. The obtained glass ceramics and initial glasses are studied using X-ray diffraction analysis and optical spectroscopy. The dielectric characteristics are measured, and the Curie temperature is determined. The effect of chromium and iron ions on the absorption spectra and dielectric properties of glasses and glass ceramics is determined.     

Determination of the magnetoelectric coupling coefficient from temperature dependences of the dielectric permittivity for multiferroic ceramics Bi5Ti3FeO15

In the multiferroic materials, the dielectric and magnetic properties are closely correlated through the coupling interaction between the ferroelectric and magnetic order. We attempted to determine the magnetoelectric coupling coefficient from the temperature dependences of the dielectric permittivity for multiferroic Bi₅Ti₃FeO₁₅. Multiferroic ceramics Bi₅Ti₃FeO₁₅ belong to materials of the Aurivillius-type structure. Multiferroic ceramics Bi₅Ti₃FeO₁₅ was synthesized via sintering the Bi₂O₃ and Fe₂O₃ mixture and TiO₂ oxides. The precursor material was ground in a high-energy attritorial mill for 5 hours. This material was obtained by a solid-state reaction process at T = 1313 K. We investigated the temperature dependences of the dielectric permittivity for the different frequencies. From the dielectric measurements, we determined the temperature of phase transition of the ferroelectric-to-paraelectric type at about 1013 K. Based on dielectric measurements and theoretical considerations, the values of the magnetoelectric coupling coefficient were specified.     

Dielectric and impedance measurements on (1−x)Ba(Fe1/2Ta1/2)O3-xBa(Zn1/3Ta2/3)O3 ceramics

In this work, ((1−x)Ba(Fe_1/2Ta_1/2)O₃-xBa(Zn_1/3Ta_2/3)O₃), ((1−x)BFT-xBZT) ceramics with x = 0.00–0.12 were synthesized by the solid–state reaction method. X-ray diffraction data revealed that both the powders and ceramics were of a pure-phase cubic perovskite structure. All ceramics showed large dielectric constants. For the x = 0.12 sample, a very high dielectric constant (>20,600) was observed. A lowering in the dielectric loss compared to pure BFT ceramics was observed with the BZT addition. The impedance measurements indicated that BZT has a strong effect on the bulk grain and grain boundary resistance of BFT ceramics. These results are in agreement with the measured dielectric properties. Based on dielectric and impedance results, (1−x)BFT-xBZT ceramics could be of great interest for high performance dielectric materials applications due their giant dielectric constant behavior.