共掺杂对Y2O3:Eu3+纳米晶结构和发光性质的影响

采用燃烧法制备不同离子(M：Li^ ,Na^ ,K^ ,Mg^2 ,Sr^2 ,Ba^2 ,B^3 ,Al^3 )共掺杂的纳米Y2O3：Eu^3 粉末。系统地研究了各掺杂离子对纳米Y2O3：Eu^3 材料的结构、发光性质及其寿命的影响。比较发现,掺杂不仅可以调节纳米材料的尺寸,还可以影响材料的结晶性,尤其是后者对发光性质和荧光动力学过程,如荧光强度、电荷迁移带的位置和^5Do的寿命等有重要的影响。     

Y2O3-Eu2O3-SnO2三元系固相线下相关系及其发光性质研究

采用固态反应法及改良固态反应法合成了一系列Y₂O₃-Eu₂O₃-SnO₂体系中的试样，利用X射线粉末衍射法测定了Y₂O₃-Eu₂O₃-SnO₂三元系固相线下的相关系.结果表明，Y₂O₃-Eu₂O₃二元系 关键词： 2O₃-Eu₂O₃-SnO₂三元系')" href="#">Y₂O₃-Eu₂O₃-SnO₂三元系 烧绿石型结构 激发光谱 发射光谱     

共掺杂对Y_2O_3:Eu~(3+)纳米晶结构和发光性质的影响

采用燃烧法制备不同离子(M:Li+,Na+,K+,Mg2+,Sr2+,Ba2+,B3+,Al3+)共掺杂的纳米Y2O3∶Eu3+粉末。系统地研究了各掺杂离子对纳米Y2O3∶Eu3+材料的结构、发光性质及其寿命的影响。比较发现,掺杂不仅可以调节纳米材料的尺寸,还可以影响材料的结晶性,尤其是后者对发光性质和荧光动力学过程,如荧光强度、电荷迁移带的位置和5D0的寿命等有重要的影响。     

Y2O3-Eu2O3-SnO2三元系固相线下相关系及其发光性质研究

采用固态反应法及改良固态反应法合成了一系列Y2O3-Eu2O3-SnO2体系中的试样,利用X射线粉末衍射法测定了Y2O3-Eu2O3-SnO2三元系固相线下的相关系.结果表明,Y2O3-Eu2O3二元系和Eu2Sn2O7-Y2Sn2O7赝二元系形成连续固溶体.对于(Y1-xEux)2Sn2O7,最强的发光峰位置在590 nm附近,源于Eu3+的5 D0-7 F1的磁偶极跃迁.对于(Y1-xEux)2O3,最强峰的位置在611 nm附近,是由Eu3+的5 D0-7 F2的电偶极跃迁引起的.激发光谱表明,与(Y1-xEux)2O3相比,(Y1-xEux)2Sn2O7的电荷迁移带向低能方向移动.Eu3+在化合物中所处的晶体学位置决定了其光谱特征.     

退火对ZnS纳米晶结构相变及发光的影响

采用共沉淀法制备了ZnS及ZnS：Eu纳米晶粉末,并对其在不同温度进行了退火处理。通过X射线粉末衍射(XRD)技术及差热分析实验(DTA)对ZnS纳米粒子在退火过程中的从立方到六角晶相的结构相变进行了研究。实验结果表明,同体材料相比,由于ZnS纳米晶具有较大的表面活性,其相变温度大大降低了。在由纳米粉末退火制备的样品中,观察到峰值位于460nm和520nm的两个发光带。前者是ZnS的自激活发光;后者归因于纳米晶制备过程中引入的缺陷或者在退火过程中形成了杂质能级。在退火温度低于800℃条件下,由纳米粒子制备的样品和由商用生粉制备的荧光粉相比较,前者的发光明显较强。铕的掺杂并没有形成新的发光中心,但却极大的增强了ZnS的缺陷发光。     

Upconversion Luminescence Dynamics in Er^3＋/Yb^3＋ Codoped Nanocrystalline Yttria

The upconversion luminescence and dynamics in Er^3＋ /Yb^3＋ codoped nanocrystalline yttria （7-65 nm） are studied under 980-nm pulsed laser excitation, It is found that the red emission of ^4F9/2-^4I15/2 and the green emission of ^2H11/2/^4S3/2 in nanoparticles with lower concentration of Yb^3＋ result from a two-photon excitation, In nanocrystals with higher Yb^3＋ concentration, the red emissions from a two-photon excitation, while the green emissions from a three-photon excitation, The luminescence dynamics indicates that as the particle size decreases, both the rise and the decay time constants become shorter, As the size decreases to several nanometres, the rise process nearly disappears, suggesting that the upconversion luminescence originates mainly from self-excitation of Er^3＋, instead of the energy transfer of Yb^3＋→ Er^3＋.     

Structure and visible photoluminescence of Sm3+, Dy3+ and Tm3+ doped c-axis oriented AlN films

Visible photoluminescence (PL) has been observed from rare earth (Tm, Sm and Dy)-doped AlN films grown by radio-frequency magnetron reactive sputtering. X-ray diffraction indicates that the films are c-axis-oriented hexagonal wurtzite type structure with an average crystal size of about 80--110nm. Room-temperature PL spectra indicate that the blue emission is due to the transition of ¹D₂ to ³F₄ and ¹G₂ to ³H₆ intra 4f electron of Tm³⁺, the yellow emissions of AlN:Sm are due to ⁴G_5/2 to the ⁶H_J (J = 5/2, 7/2, 9/2, 11/2) and the reddish emissions of AlN:Dy correspond to the ⁴F_9/2 to ⁶H_J (J = 15/2, 13/2, 11/2 and 9/2) and ⁶F_11/2 transitions.