砷化镓负电子亲合势光电阴极激活灵敏度在线检测与分析

模拟光电阴极灵敏度测试仪对GaAs阴极激活光源进行校准，并对透、反射阴极光电流比值对灵敏度的影响进行了讨论，实验结果证明，P^ 衬底和阴极组件激活灵敏度的差别主要来源于台外工艺质量的影响。     

透射式GaAs光电阴极研究

本文叙述了透射式GaAs光电阴极的原理和制作过程,详细地研究了透射式GaAs光阴极的激活工艺,获得了500μA/1m的积分灵敏度.     

GaAs光电阴极制备工艺的俄歇分析

我们在一台制作第三代象增强器的超高真空系统中安装了俄歇(Auger)能谱仪,以其对GaAs光电阴极的制备过程进行在线监测分析,其中包括选择性腐蚀过程的俄歇观测,阴极激活前清洁措施的效果评价和Cs-O激活过程中As/Ga俄歇信号比对光电灵敏度的影响,Cs源纯度的分析及对光电发射的影响。根据分析结果,激活出了1000μA/lm的反射式光电阴极和500μA/lm的透射式光电阴极。     

激活台内透射式GaAs光电阴极的光谱响应特性研究

利用在线光谱响应技术,对透射式GaAs光电阴极在高温激活和低温激活后的光谱响应特性进行了测试,计算并比较了高温激活和低温激活后阴极的积分灵敏度和光谱响应特性参数.结果发现,与高温激活相比,低温激活后GaAs光电阴极的积分灵敏度提高了13％,低温激活后阴极的截止波长和峰值波长均向长波有微小偏移.将已获得的测试曲线与铟封后的三代像增强器的光谱响应曲线进行了比较,结果发现铟封前后的光谱响应曲线存在明显差异.     

GaAs光电阴极稳定性的光谱响应测试与分析

利用光谱响应测试仪对激活后的反射式GaAs(Cs,O)光电阴极进行了稳定性测试,获得了阴极随时间变化的光谱响应曲线,并表征了阴极在衰减过程中的性能参数变化.结果表明:积分灵敏度和峰值响应随着时间不断下降,截止波长向短波推移,表面逸出几率的下降是阴极衰减的直接原因.不同波长下光谱响应的衰减速率并不相同,波长越长,衰减速率越大,因此激活台内阴极在灵敏度衰减的同时长波响应能力也在不断下降.     

红外InGaAsP光电阴极研究

本文主要对阈值波长可达1.25μm的InGaAsP光电阴极进行了详细的研究。在国内首次实现了在0.5μm～1.25μm波段范围内具有光电响应的半导体光电阴极。用Cs和O₂激活后得到的光电阴极在1.06μm处的反射式光电灵敏度为3.4mA/W,量子效率为0.4%。本文还对激活表面及热清洁工艺进行了系统地分析,确定出了最佳的表面清洁温度及时间。     

透射式GaAs光电阴极激活技术研究

通过对成像器件ＧａＡｓ负电子亲合势（ＮＥＡ）光电阴极激活技术的研究,运用分析仪器进行工艺质量在线监测,在大、薄、匀的ＧａＡｓ外延层激活出的台内阴极灵敏度大于１３００μＡ／ｌｍ。     

NEA光电阴极的(Cs,O)激活工艺研究

在自行研制的负电子亲和势光电阴极性能评估实验系统上,首次利用动态光谱响应技术和变角X射线光电子能谱(XPS)表面分析技术研究了GaAs光电阴极的(Cs,O)激活工艺.获得了首次导Cs、(Cs,O)导入以及(Cs,O)循环的优化激活条件.XPS分析给出GaAs(Cs,O)的最佳激活层厚度为0.82 nm,首次导Cs达到峰值光电发射时的Cs覆盖率为0.71个单层.在优化激活条件下,可以在国产反射式GaAs上获得1025 μA/lm的积分灵敏度.     

GaAs光电阴极热清洗工艺研究

GaAs光电阴极在进行Cs-O激活前．激活层表面必须达到原子级洁净。最常用且最有效的洁净方法是高温热清洗法。然而．在热清洗过程中对处在真空系统中的光电阴极表面温度进行精确测量却是非常困难的。本文采用四极质谱仪对GaAs光电阴极激活前的热清洗过程进行分析．确定了最佳的热清洗温度及热清洗工艺，较好地解决了GaAs光电阴极激活前的热清洗工艺问题。     

透射式GaAs光电阴极组件在真空烘烤后表面氧化的XPS分析

介绍了GaAs光电阴极在高温烘烤后不同深度上Ga原子和As原子氧化的XPS分析结果,并对GaAs中的Ga原子比As原子更容易氧化以及GaAs光电阴极在经过高温烘烤后,其激活所能达到的阴极灵敏度偏低的现象进行了分析.     

GaAs真空电子源衰减模型研究

利用X射线光电子能谱(XPS)仪对激活后的GaAs真空电子源进行了随时间衰减变化的XPS分析,分析发现了电子源阴极表面各元素百分含量随时间的变化,揭示了杂质气体吸附造成的偶极矩方向的改变是电子源灵敏度显著下降的主要原因.基于上述结论,通过分析真空系统中杂质气体的吸附过程,推导并得到了GaAs电子源衰减模型.该模型从理论上揭示了GaAs电子源的指数衰减规律以及寿命与真空度的反比关系,与实验现象完全一致. 关键词： 电子源 X射线光电子能谱 衰减模型 真空度     

Firing characteristics of a low-jitter miniature laser-triggeredvacuum switch

A miniature laser-triggered high-voltage vacuum switch with a fused KCl and Ni cathode is discussed. The switch uses metal-ceramic construction with a sapphire window in the anode to allow the laser beam to strike the cathode surface. Reliable triggering is achieved with only 20 μJ of laser energy. The switch was operated with a gap voltage ranging from 500 V to 3 kV, with switching currents up to a 5 kA peak. Switch life greater than 1000 shots without performance degradation has been observed on 50 prototype devices. The function time of the switch varies from 10±1 ns at 3 kV to 100±50 ns at 500 V     

强流四脉冲电子束源实验研究

 为了进行强流多电子束源研究，对现有2MeV LIA 注入器进行了四脉冲改造，二极管脉冲电压约500kV。实验研究了天鹅绒阴极在四脉冲条件下的发射能力、传导电流负载效应以及阴极等离子体运动对阴极电子发射和束能量的影响。利用空间电荷限制流模型推算出阴极等离子体膨胀速率在1 ~4cm/μs之间。     

Vacuum anodic discharge as source of ionized fluxes of coating material

Cathodic and anodic discharges are effective sources of coating material ionized fluxes. Of special interest is the use of anodic discharges, particularly discharges with a thermoelectronic cathode. The discharge forms fluxes in high vacuum with regulated ionization and the absence of micro liquid droplets. The initiation conditions and characteristics of the discharge in the voltage range from 50 to 500 V with currents up to 5 A were investigated. The dependence of vacuum, interelectrode distance, and cathode heating temperature were considered. Conditions for the production of coating material fluxes with maximum ionization were established.     

真空规管对低温容器残余气体影响的实验研究

以高真空多层绝热低温容器为研究对象,利用残余气体分析仪研究冷阴极真空规管、热阴极真空规管以及热阴极真空规管不同放置位置对低温容器真空夹层内残余气体的影响.结果表明:冷阴极真空规管对低温容器真空夹层内残余气体的影响几乎是可以忽略不计的;热阴极真空规管对低温容器真空夹层内残余气体的影响较大,热阴极的灯丝和残余气体之间存在化...     

真空残气对GaAs阴极发射性能的影响

针对三代微光像增强器的GaAs阴极灵敏度下降，分析真空残气对阴极发射性能的影响。实验结果表明，有害气体是造成阴极灵敏度下降的主要因素。     

Residual gas properties in a field emission device with ZnO emitters

In this paper, a vacuum system is employed to compare the emission stabilities of the same ZnO cathode in a sealed field emission （FE） device and under ultrahigh vacuum （UHV） conditions. It is observed that the emission current is more stable under the UHV level than in the device. When all conditions except the ambient gases are kept unchanged, the emission current degradation is mainly caused by the residual gases in the sealed device. The quadrupole mass spectrometer （QMS） equipped on the vacuum system is used to investigate the residual gas components. Based on the obtained QMS data, the following conclusions can be drawn： the residual gases in ZnO-FE devices are H2, CH4, CO, Ar, and CO2. These residual gases can change the work function at the surface through adsorption or ion bombardment, thereby degrading the emission current of the cathode.     

Investigation of unstable motion characteristics of vacuum arc cathode spots between transverse magnetic field contacts

With the improvement of the current level of power grids, the requirements of the opening level of the vacuum switches are also increasing. Vacuum arc cathode spots provide steam and electrons and, to a certain extent, determine the opening capacity of the vacuum switch. In this paper, a vacuum arc cathode spot research platform based on the de-mountable vacuum chamber is constructed. The characteristics of the vacuum arc cathode spots under the transverse magnetic field (TMF) contacts are assessed by a high-speed charge coupled device. The experimental results show that the cathode spot diffusion process can be divided into three processes through cathode spot distribution, arc voltage and current: initial diffusion stage of cathode spots, unstable motion stage of cathode spots, and extinguishing stage. The motion mode of cathode spots during unstable motion stage can be divided into cathode spots group stagnation (CSGS) to multi-cathode jet (MCJ) switch mode, cathode spots group motion (CSGM) to MCJ switch mode, CSGM mode, and MCJ mode. The effects of peak current and contact diameter on unstable motion mode were analysed.     

Efficiency of a planar diode with an explosive emission cathode under the conditions of delayed plasma formation

The energy and current balances in the diode unit of a high-current pulsed electron accelerator (350–500 keV, 60 ns, 250 J per pulse) are compared for an explosive emission cathode (made of graphite, copper, or carbon felt) and a multipoint (graphite or copper) cathode. The planar diode with the continuous cathode is shown to be more efficient in terms of conversion of the applied energy to electron energy (more than 90%) despite a delay in the plasma surface formation. With the impedance of the planar diode matched to the output resistance of the nanosecond generator, the efficiency of the diode does not depend on the time of plasma formation on the cathode. In the case of the graphite cathode, the plasma formation delay reduces the fraction of slow electrons in the forming electron beam and reduces electron losses in anode foil when the beam is extracted from the vacuum space of the diode chamber into the reactor.     

电极电压对碳纳米管阴极电离规性能影响的数值模拟

本文基于IE514分离规结构, 建立了碳纳米管阴极电离规物理模型, 根据电离规标准方程, 利用离子光学模拟软件SIMION 8.0分别研究了电极电压对灵敏度和I_grid/I_e的影响. 结果表明, 随着阳极/门极电压比值增大(V_grid/V_gate), I_grid/I_e也将增大, 然而, 当阳极电压增大时, 会导致灵敏度降低, 进而影响真空测量下限的延伸; 该模拟结果与相关文献报道的实验结果符合性很好. 因此, 选择合适的电极电压, 将有利于提高灵敏度, 增大阳极电流, 进一步延伸真空测量下限. 本文所采用的数值模拟方法可推广应用于各种新型碳纳米管阴极极高真空电离规的研发和理论分析中, 为解决极高真空测量难题提供了有效的研究途径. 关键词： 碳纳米管阴极电离规 电极电压 灵敏度 阳极电流