晶体缺陷规范场中的刃位错

本文用位错连续分布方法表出了刃位错所产生的应变和应力场,得到了刃位错芯区内、外的应力场,位错芯区的无限小位错分布用缺陷规范场表出,并在一定规范条件下求解了位错规范场,在刃位错芯区外,其应力场与Volterra位错的应力场完全一样,而在芯区内,当r趋于零,刃位错的应力场为有限,消除了应力的奇异性。 关键词：     

Experimental verification of Foreman dislocation model

We present a strain analysis of an edge dislocation core, and a detailed discussion of the Foreman dislocation model. In order to examine the model, the quantitative measurement of strain field around an edge dislocation in aluminum is performed, and high-resolution transmission electron microscopy and geometric phase analysis are employed to map the strain field of the edge dislocation core in aluminum. The strain measurements are compared with the Foreman dislocation model, showing that they are in good agreement with each other when 0.7 ≤ a ≤ 1.5.     

In situ investigation of the effect of a magnetic field on the mobility of dislocations in deformed KCl:Ca single crystals

This paper presents the results of an experimental investigation into the mobility of edge dislocations in KCl:Ca single crystals and the effect of a static magnetic field of 0.3 T on the dislocation mobility. The experiments on the effect of a magnetic field on the dislocation mobility were carried out with the use of a high-resolution (1 ms) method that permits in situ measurements of the sample dipole moment induced by the motion of charged dislocations as the crystal is being deformed. It is found that the starting stress is reduced in a magnetic field and the activation volume for overcoming of point defects by the dislocations is increased. It is further found that the magnetic field increases the rate of motion of the dislocations at the initial stage of deformation (to the point of dislocation multiplication) but has no effect on the mobility in the multiplication stage. Fiz. Tverd. Tela (St. Petersburg) 39, 630–633 (April 1997)     

Effect of the magnetic field on the edge states of zig-zag single wall carbon nanotubes

The influence of the static magnetic field on the edge states of finite zig-zag nanotubes has been explored theoretically by the tight-binding approximation. It was found that the magnetic field removes the degeneracy of the energy levels of the edge states. Investigation of the formation of new edge states by the magnetic field indicated the dependence of the number of these states on the length of a nanotube.     

Edge misfit dislocation formation at the interface of a nanopore and infinite substrate with surface/interface effects

The model of an edge misfit dislocation at the interface of the hollow nanopore and the infinite substrate with surface/interface stress is investigated. Using the complex variable method, analytical solutions for complex potentials of a film due to an edge misfit dislocation located in the film with surface/interface effect are derived, and the stress fields of the film and the edge misfit dislocation formation energy can be obtained. The critical conditions for edge misfit dislocation formation are given at which the generation of an edge misfit dislocation is energetically favourable. The influence of the ratio of the shear modulus between the film and the infinite substrate, the misfit strain, the radius of the nanopore and the surface/interface stress on the critical thickness of the film is discussed.     

磁致塑性效应下的位错动力学机制

基于磁致塑性效应探讨了磁场作用下位错受力和运动机制, 对磁场下的位错动力学机制进行了定性和定量分析. 选择氧化铝纳米颗粒强化铝基复合材料为实验对象, 在不同磁感应强度下(0–3 T范围)对试样进行磁场处理. 结果表明, 随着磁感应强度增加, 位错密度提高, 表现出塑性变形特征. 分析认为, 磁场力不足以驱动位错运动, 位错增殖诱因在于磁致塑性效应, 即磁场改变了顺磁性位错芯与障碍间自由基对中的电子自旋状态, 促使自由基对从强键结合单线态向弱键结合三重态转化, 位错穿越障碍时所需能量减小, 退钉扎趋势明显; 位错运动中的限速环节是位错在障碍处的停留, 磁场诱发的电子激发和原子重排速度很快, 表现出磁场作用的高效性. 磁场起作用的临界磁感应强度约为3 T, 低于3 T时磁场作用随磁场强度增加而变得明显, 高于3 T 后磁场效果会减小. 计算得到3 T 时位错运动速度是10^-3 m/s, 位错线长度比未加磁场时增加两个数量级, 位移与磁感应强度平方和磁场作用时间成正比. 实验和理论研究表明磁场具有改善材料塑性变形能力的显著作用.     

Equilibrium critical thickness for a wurtzite InGaN/GaN heterostructure

We present a finite element model to simulate a combined strained In_xGa_1−xN/GaN heterostructure and an edge misfit dislocation on the basal {0001} slip plane, taking the anisotropic elasticity into account. The introduction of a misfit dislocation partially relaxes the misfit strain. The model directly gives the residual strain, which is the exact strain field stored in the system after relaxation. The critical thickness is then determined based on an overall energy minimization approach including the dislocation core contribution. Compared with the results from other methods and available experimental data, our approach is appropriate for describing the critical thickness of the wurtzite InGaN/GaN material system.     

Dislocation field theory in 2D: Application to graphene

A two-dimensional (2D) dislocation continuum theory is being introduced. The present theory adds elastic rotation, dislocation density, and background stress to the classical energy density of elasticity. This theory contains four material moduli. Two characteristic length scales are defined in terms of the four material moduli. Non-singular solutions of the stresses and elastic distortions of an edge dislocation are calculated. It has been pointed out that the elastic strain agrees well with experimental data found recently for an edge dislocation in graphene.     

Vibrational entropy of dislocations in Al

The region nearest to a lattice defect must be described by an atomistic model, while a continuum model suffices further away from the defect. We study such a separation into two regions for an edge dislocation. In particular we focus on the excess defect energy and vibrational entropy, when the dislocation core is described by a cluster of about 500–100?atoms, embedded in a large discrete and relaxed, but static, lattice. The interaction between the atoms is given by a potential of the embedded-atom model type referring to Al. The dynamic matrix of the vibrations in the cluster is fully diagonalized. The excess entropy ΔS near the core has positive and negative contributions, depending on the sign of the local strain. Typically, ΔS/k _B ≈ 2 per atomic repeat length along the dislocation core in fcc Al. In the elastic continuum region far from the dislocation core the excess entropy shows the same logarithmic divergence as the elastic energy. Although the work refers to a specific material and defect type, the results are of a generic nature.     

Influence of high pulsed magnetic field on tensile properties of TC4 alloy

The tensile tests of TC4 alloy are carried on electronic universal testing machine in the synchronous presence of high pulsed magnetic field(HPMF) parallel to the axial direction.The effects of magnetic induction intensity(5 = 0,1 T,3 T,and 5 T) on elongation(5) of TC4 alloy are investigated.At 3 T,the elongation arrives at a maximum value of12.41%,which is enhanced by 23.98%in comparison with that of initial sample.The elongation curve shows that 3 T is a critical point.With B increasing,the volume fraction of α phase is enhanced from 49.7%to 55.9%,which demonstrates that the HPMF can induce the phase transformation from β phase to α phase.Furthermore,the magnetic field not only promotes the orientation preference of crystal plane along the slipping direction,but also has the effect on increasing the dislocation density.The dislocation density increases with the enhancement of magnetic induction intensity and the 3-T parameter is ascertained as a turning point from increase to decrease tendency.When B is larger than 3 T,the dislocation density decreases with the enhancement of B.The influence of magnetic field is analyzed on the basis of magneto-plasticity effect.The high magnetic field will enhance the dislocation strain energy and promote the state conversion of radical pair generated between the dislocation and obstacles from singlet into triplet state,in which is analyzed the phenomenon that the dislocation density is at an utmost with B = 3 T.Finally,the inevitability of optimized 3-T parameter is further discussed on a quantum scale.     

Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure

This paper reports on a comparative study of the spatial distributions of the electrical, optical, and structural properties in an AlGaN/GaN heterostructure. Edge dislocation density in the GaN template layer is shown to decrease in the regions of the wafer where the heterostructure sheet resistance increases and the GaN photoluminescence band-edge energy peak shifts to a high wavelength. This phenomenon is found to be attributed to the local compressive strain surrounding edge dislocation, which will generate a local piezoelectric polarization field in the GaN layer in the opposite direction to the piezoelectric polarization field in the AlGaN layer and thus help to increase the two-dimensional electron gas concentration.     

Crack tip dislocation emission and nanoscale deformation fields in silicon

A micro-crack in silicon was experimentally investigated by using a combination of transmission electron microscopy and geometric phase analysis. The strain fields of the crack tip, with scales of a few tens of nanometers, were mapped. The crack tip dislocation emission and stress relief by dislocation generation around a crack tip can be proved. And, the strain field of an edge dislocation was compared with the Peierls–Nabarro dislocation model at the scale of a dislocation width. We show that the Peierls–Nabarro model is the appropriate theoretical model to describe the deformation fields of the dislocation core.     

Magnetoplastic effect in InSb

We have observed dislocation motion in InSb semiconductor crystals under the action of a static magnetic field in the absence of a mechanical load. The dependence of the average dislocation travel distance and of the relative number of diverging and converging half-loops on the magnetic induction and the “magnetic treatment” time is obtained. The activation energy of the motion of diverging dislocations in a magnetic field in the temperature range 120–250°C is estimated. Possible reasons for the observed phenomenon are discussed. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 4, 298–302 (25 August 1999)     

The gauge theory of dislocations: Static solutions of screw and edge dislocations

We investigate the T(3)-gauge theory of static dislocations in continuous solids. We use the most general linear constitutive relations in terms of the elastic distortion tensor and dislocation density tensor for the force and pseudomoment stresses of an isotropic solid. The constitutive relations contain six material parameters. In this theory, both the force and pseudomoment stresses are asymmetric. The theory possesses four characteristic lengths ?₁, ?₂, ?₃ and ?₄, which are given explicitly. We first derive the three-dimensional Green tensor of the master equation for the force stresses in the translational gauge theory of dislocations. We then investigate the situation of generalized plane strain (anti-plane strain and plane strain). Using the stress function method, we find modified stress functions for screw and edge dislocations. The solution of the screw dislocation is given in terms of one independent length ?₁ = ?₄. For the problem of an edge dislocation, only two characteristic lengths ?₂ and ?₃ arise with one of them being the same ?₂ = ?₁ as for the screw dislocation. Thus, this theory possesses only two independent lengths for generalized plane strain. If the two lengths ?₂ and ?₃ of an edge dislocation are equal, we obtain an edge dislocation, which is the gauge theoretical version of a modified Volterra edge dislocation. In the case of symmetric stresses, we recover well-known results obtained earlier.     

Kinetics of transformation of Eu<Superscript>2+</Superscript> dimers in NaCl crystals in a static magnetic field of 15 T

A static magnetic field of up to 15 T is found to affect the photoluminescence excitation spectra of NaCl: Eu crystals. The magnetic field has an effect on the excitation spectra starting at the stage at which dimers are formed through diffusion in the crystals. At earlier stages of impurity aggregation, the magnetic field affects the kinetics of dimer accumulation. It is revealed that the dimer transformation stimulated by the magnetic field involves stages that last for 10–15 min at room temperature in a static magnetic field of 15 T and, hence, are shorter than the aggregation time. Luminescence studies of dimers, which are the main dislocation stoppers in NaCl: Eu crystals, make it possible to explain the specific features of the magnetoplastic effect observed previously in these crystals.     

Section images of dislocations normal to the surface of a 6H-SiC single crystal

Section topographs of edge and screw dislocations with an axis along [0001] in 6H-SiC are taken and interpreted, and the image formation is explained for this case. The contrast induced by various arrangements of dislocations within the Borrmann triangle is experimentally studied. The sign of the Burgers vector of an edge or screw dislocation normal to the crystal surface is shown to be unambiguously determined from the section-topograph image of this dislocation. The sign of the Burgers vector of a screw dislocation can also be determined from its image taken with Lang projection topography. The contribution of a long-range strain field to the section images of edge and screw dislocations normal to the crystal surface is revealed. The experimental contrasts recorded using section topography and Borrmann-effect-based topography are compared.     

Analysis of the displacement field of a moving dislocation in a crystal

The method of stationary phase is applied to the asymptotic evaluation of the integrals that give the atomic displacements for a high velocity screw dislocation in a simple cubic lattice. The moving dislocation creates a wake behind it. Inside the wake there are large oscillatory displacements due to the emission of sound waves, while in front of the dislocation the displacements are given to a good approximation by continuum elastic theory. The strain field inside the wake is oscillatory and falls off as the square root of the distance from the dislocation core in the absence of dissipation; an exponential damping occurs if the phonons are assigned a finite lifetime. Special attention is given to the edge of the wake where the strain field decreases as the inverse cube root in the absence of damping. The comparison with the numerical evaluation of the atomic displacement is very good over the range of validity of the asymptotic formulae     

Electronic and optical properties of GaN/AlN quantum dots with adjacent threading dislocations

We present a theory to simulate a coherent GaN QD with an adjacent pure edge threading dislocation by using a finite element method. The piezoelectric effects and the strain modified band edges are investigated in the framework of multi-band $\bm k\cdot \bm p$ theory to calculate the electron and the heavy hole energy levels. The linear optical absorption coefficients corresponding to the interband ground state transition are obtained via the density matrix approach and perturbation expansion method. The results indicate that the strain distribution of the threading dislocation affects the electronic structure. Moreover, the ground state transition behaviour is also influenced by the position of the adjacent threading dislocation.     

Magnetic field driven domain-wall propagation in magnetic nanowires

The mechanism of magnetic field induced magnetic domain-wall (DW) propagation in a nanowire is revealed: A static DW cannot exist in a homogeneous magnetic nanowire when an external magnetic field is applied. Thus, a DW must vary with time under a static magnetic field. A moving DW must dissipate energy due to the Gilbert damping. As a result, the wire has to release its Zeeman energy through the DW propagation along the field direction. The DW propagation speed is proportional to the energy dissipation rate that is determined by the DW structure. The negative differential mobility in the intermediate field is due to the transition from high energy dissipation at low field to low energy dissipation at high field. For the field larger than the so-called Walker breakdown field, DW plane precesses around the wire, leading to the propagation speed oscillation.