紫外/臭氧法PDMS表面亲水改性机理研究

紫外/臭氧改性法是一种操作简单、成本低廉的PDMS表面亲水改性方法。采用该方法对PDMS表面进行亲水改性,利用接触角测量仪对改性效果进行评价,并与PDMS无臭氧紫外法进行了比较。测试表明PDMS表面经紫外/臭氧法处理12小时后,表面接触角达到60°左右,在空气中放置两周后仍保持较好的亲水性。其改性机理可以通过多种表征手段进行分析。红外光谱测试可以看出,PDMS在经过紫外/臭氧改性后,其表面官能团变化明显,随改性时间延长,疏水基团—CH₃逐渐减少,亲水基团Si—OH和—OH逐步增加,二氧化硅典型红外光谱峰也同时出现。通过扫描电镜和能谱测试可以看出,PDMS表面经过改性产生了二氧化硅为主的硅的氧化物。综合上述结果,紫外/臭氧处理法能够使PDMS表面亲水基团增多,同时生成类玻璃态SiO_x薄层,既改善了PDMS表面的亲水性,又阻止了PDMS表面疏水性的完全恢复,亲水性可以长时间保持。     

基于近红外光谱的柔性基底紫外臭氧改性效果表征研究

近年来,随着纳米科技、聚合物材料和先进制造技术的发展,以柔性传感器为代表的新兴柔性电子器件在可穿戴、健康医疗、物联网终端等领域发挥着越来越重要的作用。作为柔性电子器件的载体,柔性基底对传感器的机械可靠性和电学传感性能等方面有着重要的意义。但由于其表面非极性键造成的高疏水性限制了功能性材料在其表面的沉积,常常造成柔性基底层与电极层/敏感层之间不稳定的界面结合。因此,利用紫外臭氧处理对柔性基底表面改性受到了广泛的关注。利用近红外光谱技术对柔性基底的紫外臭氧处理效果进行快速精准评估,旨在从基团分子层面探究其改性效果,在实际应用中是对传统依靠接触角测量评估方法的有效补充。具体而言,对四种常见的柔性基底材料聚二甲基硅氧烷(PDMS)、聚萘二甲酸乙二醇酯（PEN）、聚对苯二甲酸乙二醇酯（PET）和聚酰亚胺（PI）进行了1/2/5/10 min不同时长的紫外臭氧（UVO）改性处理,并利用近红外光谱对其改性效果进行表征研究,最后利用接触角测量方法对上述的表征结果进行了验证分析。近红外光谱分析表明：对于柔性PDMS基底,紫外光能量不足以切断其中的甲基（—CH₃）官能团和（—C—Si—）等化学键,无法引入羟基、羧基等亲水性基团。对于柔性PEN和PET基底而言,紫外臭氧处理的效果要优于柔性PDMS基底,且对柔性PET基底的处理效果要优于柔性PEN基底,其原因可能是PEN基底材料中萘环的双环结构具有很强的紫外光吸收能力,阻隔了380 nm以下的大部分紫外线能量。对于柔性PI基底,紫外臭氧处理可以有效引入羟基（—OH）和羧基（—COOH）等活性基团,且这些官能团的强度和数量随着处理时间的增加而增加,从而在短时间内使得PI基底表面能增大、接触角减小、湿润性提高。接触角测试结果验证：紫外臭氧处理对于柔性PDMS基底处理效果不明显（接触角下降幅度为8.4%）;对柔性PET基底处理的效果（接触角下降幅度为39.6%）要优于柔性PEN基底的处理效果（接触角下降幅度为9.4%）;紫外臭氧处理的效果对柔性PI基底处理效果最佳,接触角下降幅度达到了62.7%。     

一种分析三维楔脊形光波导与光纤耦合的方法

和直波导的不同在于，三维楔脊形波导中的光场都是不稳定的.分别对波导-光纤耦合、光纤-波导耦合两种情况，将三维楔脊形波导等效为多段短的直波导，利用束传播法同时对三维楔脊形波导内不稳定的入射、反射场，及它们在传播方向上的偏导进行处理，再用自由空间辐射模法计算透射率和反射率.以SOI楔脊形波导和光纤的耦合为例，验证了该方法的可行性. 关键词： 自由空间辐射模法 束传播法 耦合 透射 楔脊形光波导 绝缘体上硅(SOI)     

激发双线波导中的对称和反对称等离子体波导模式的新型耦合器

在亚波长光学集成中,波导中表面等离子体传输模式的激发是一个重要的问题。利用表面全息法设计结构,并对表面等离子体波进行整形。将平面等离子体波匹配到双线波导中的对称和反对称模式,从而实现波导中两种模式的有效激发。利用时域有限差分法对设计结构进行验证,发现双线波导中两种模式能够有效激发。对结构参数进行优化,对称与反对称模式的激发效率分别达到8.7%和10.8%。     

一种基于多模干涉耦合器的模转换与合并器件的设计

多模波导干涉（MMI）耦合器在集成光路中被用来实现波导模式的转换或合并。对于实际的基于硅绝缘体（SOI）的三维波导，数值设计方法是必需的。采用有限差分波束传输法（FD-BPM）设计了一种66％模式转换、合并器。首先由FD-BPM求出MMI耦合器的输入、输出波导所支持的基模和一阶导模的模场分布，通过数值方法得到MMI耦合器的长度，然后将求得的模场作为输入波场，经过FD-BPM运算后在器件输出面上计算交叉积分得出实际的由基模转换为一阶模的功率百分比。对于算例中采用的SOI波导，器件长度为829μm，65．7％的功率由基模转换为一阶模。     

基于数字光刻投影系统的快速微加工技术

设计一种经济有效的微流体芯片加工方法,可以快速地在聚二甲基硅氧烷（PDMS）表面加工出不同尺寸的微流路。 利用商用数字投影仪的成像原理,对其进行简单的改装,得到成缩小像的数字光刻投影系统（DLPS）,并利用该系统在PDMS表面加工微流路;同时通过荷叶效应和毛细吸附效应两组实验,对DLPS的加工性能进行了验证和应用。 该DLPS可在PDMS表面加工微结构,最小稳定加工精度可达40 m,通过模仿荷叶效应获得的材料表面,其疏水角增加到1233。 该DLPS系统可用于快速加工微流体芯片,当流路尺寸要求不是很严格时,低成本和高效率等优点使该系统完全适合在普通实验室开展微流体技术的研究。     

各向异性特异材料波导中表面等离子体的共振性质

使用时域有限差分法,研究了各向异性特异材料(AMM)作为包层的AMM/介质/AMM波导中表面等离子体的共振性质.色散关系表明,当特异材料为负磁导率的always-cutoff型时,AMM/介质/AMM波导支持TE极化的表面等离子体,表面等离子体的波长随着中间介质层的厚度和特异材料磁等离子体频率的减小而变短.在有限长度AMM/介质/AMM波导中,由于两端界面的反射,表面等离子体模在波导中形成Fabry-Perot共振,而实现亚波长的表面等离子体微腔.在共振频率,电场强度在微腔的中部达到最大值,而磁场分别在两端界面处达到最大,电磁能强局域在中间介质层中,这一性质将在可调的具有强局域特性的亚波长微腔及腔量子电动力学中具有潜在的应用.     

硅基二氧化硅波导和SOI脊型波导应力双折射研究

采用有限元方法分析了硅基二氧化硅波导和SOI（Silicon on Insulator）脊型波导内部残留热应力引起的双折射.对于硅基二氧化硅波导，应力双折射系数的数量级为10－4，对于上包层为空气的SOI脊型波导，该系数的数量级为10－5，对于上包层为SiO2的SOI脊型波导，该系数的数量级为10－3，可见在硅基二氧化硅波导和上包层为SiO2的SOI脊型波导中产生了大的应力双折射，而在上包层为空气的SOI脊型波导中应力双折射较小.     

单层有机电致发光器件的阳极修饰研究

通过紫外臭氧和等离子体处理两种方式, 对ITO表面进行了处理。将处理之后的ITO玻璃应用于单层有机电致发光器件(SLOLED)中, 探究两种表面处理方式对改善器件性能的影响差别。实验结果表明, 以等离子体处理之后的基片所得到的器件性能要明显优于紫外臭氧处理。基于等离子体表面处理方式, 引入了MoO₃和HAT-CN两种缓冲层材料, 研究了这两种材料对SLOLED器件性能的影响。实验结果表明, 以HAT-CN为缓冲层的SLOLED表现出更优越的器件性能。     

硅基混合表面等离子体纳米光波导及集成器件

总结并展望了硅基混合表面等离子体纳米光波导及集成器件方面的理论和实验研究工作。首先介绍了几种硅基混合表面等离子体纳米光波导结构,其尺寸可小至100 nm以下,而传播长度达100μm量级;其次介绍了基于硅基混合表面等离子体纳米光波导的功分器、偏振分束器和谐振器等集成器件,其尺寸为亚微米量级;最后探讨了硅基混合表面等离子体纳米光波导与硅纳米线光波导的耦合及对其进行增益补偿。     

Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

The factors influencing the crosstalk of silicon-on-insulator(SOI) nanowire arrayed waveguide grating(AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography(DUV) and inductively coupled plasma etching(ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 d B through adopting 800 nm arrayed waveguide width.     

Long term hydrophilic coating on poly(dimethylsiloxane) substrates for microfluidic applications

Poly(dimethylsiloxane) (PDMS) has been used extensively for microfluidic components and as substrates for biological applications. Since the native nature of PDMS is hydrophobic it requires a functionalization step for use in conjunction with aqueous media. Commonly, oxygen plasma treatment is used for the formation of hydrophilic groups on the surface. However, the hydrophilic nature of these surfaces is short lived and the surfaces quickly revert back to their original hydrophobic state. In this work, branched-polyethylenimine (b-PEI) was used for long term modification of plasma treated PDMS surface. Contact angle, X-ray photoelectron spectroscopy (XPS) and Atomic force microscopy (AFM) were used for characterization of the modified surfaces and their stability with time was studied. The results obtained demonstrate that comparatively higher stability, hydrophilic, positively charged surfaces can be obtained after b-PEI treatment. These b-PEI treated PDMS surfaces can be used as fluidic channels for the separation of molecules as well as a substrate for the adherence of bio-molecules or biological cells.     

Mechanics of plasma exposed spin-on-glass (SOG) and polydimethyl siloxane (PDMS) surfaces and their impact on bond strength

Silicone polymer (PDMS), widely used for micro-fluidic and biosensor applications, possesses an extremely dynamic surface after it is subjected to an oxygen plasma treatment process. The surface becomes extremely hydrophilic immediately after oxygen plasma exposure by developing silanol bond (SiOH), which promotes its adhesion to some other surfaces like, silicon, silicon dioxide, glass, etc. Such a surface, if left in ambient dry air, shows a gradual recovery of hydrophobicity. We have found an identical behavior to occur to surfaces coated with a thin continuous film of SOG (methyl silsesquioxane). The chemistry induced by oxygen plasma treatment of a spin-on-glass (SOG) coated surface provides a much higher density of surface silanol groups in comparison to precleaned glass, silicon or silicon dioxide substrates thus providing a higher bond strength with polydimethyl siloxane (PDMS). The bonding protocol developed by using the spin coated and cured SOG intermediate layer provides an universal regime of multi level wafer bonding of PDMS to a variety of substrates. The paper describes a contact angle based estimation of bond strength for SOG and PDMS surfaces exposed to various combinations of plasma parameters. We have found that the highest bond strength condition is achieved if the contact angle on the SOG surface is less than 10°.     

Design and Fabrication of Artificial Skin: Chitosan and Gelatin Immobilization on Silicone by Poly Acrylic Acid Graft Using a Plasma Surface Modification Method

Acrylic acid (AAc) was grafted onto the surfaces of polydimethylsiloxane (PDMS) films using a two-step oxygen plasma treatment. The first step of this method included oxygen plasma pretreatment of the PDMS films, immersion in AAc, and drying. The second step was carried out by plasma polymerization of the preadsorbed reactive AAc on the surfaces of the dried pretreated films. Then chitosan and gelatin were immobilized onto the poly(acrylic acid) grafted silicone through covalent bonding. The films were characterized by attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy and water contact angle measurements. Fibroblast cells (L929) were cultured onto the chitosan- and gelatin-immobilized poly(acrylic acid)-grafted silicone and poly(acrylic acid)-grafted silicone films. It was observed that the chitosan- and gelatin-immobilized surfaces showed significant cell growth in comparison with poly(acrylic acid)-grafted silicone samples. It seems that chitosan- and gelatin-immobilized surfaces may have an excellent potential to be used as a derm-like matrix.     

SOI全内反射型光波导电光开关模型研究

根据受抑全反射的光学隧道效应和Ｇｏｏｓ－Ｈａｎｃｈｅｎ位移分析ＳＯＩ全内反射型光波导开关中导模的传输和反射特性。在讨论等离子体色散效应，ｐ－ｎ结大注入效应的基础上，分析了全内反射光波导开关的电学性质。设计了该器件的结构以数和电学参数。     

PDMS梯度光栅结构制备技术研究

由于传统方法制作的梯度光栅,工艺条件苛刻,制作过程复杂,难以控制,制作成本高,周期较长,提出了一种成本低、工艺简单、可大量制备梯度光栅的工艺方法,采用基于刚性薄膜/柔性衬底的自组装工艺和氧等离子体(Plasma)的方法制备了微米尺度的梯度光栅,利用Plasma时间的可控性和聚二甲基硅氧烷(PDMS)优异的弹性制得所需要尺寸的光栅。首先在聚乙烯对苯二酸脂(PET)薄膜上旋涂一层PDMS薄膜,待PDMS薄膜固化后将双层薄膜弯曲并用Plasma处理,在其表面生成一层刚性氧化层,借助柔性的PET对刚性层施加均匀应力,当应力超过临界值时,在PDMS基底上自组装形成光栅褶皱结构。由于弯曲时预应力的变化,所以在PDMS薄膜上会形成周期和高度呈阶梯状的的光栅褶皱,也就是梯度光栅。采用可见光作为梯度光栅的性能测试光源,选用一级衍射光作为检测对象,从图谱中可以看出以PDMS为基底制备的光栅具有很好的衍射效应,并可实现很好的分光效果。实验表明：梯度光栅具有明显的衍射现象,并且衍射角变化显著,可广泛用于应力测量。这种方法制备的柔性梯度光栅也可以作为微型应变装置来检测应力的变化,未来有望用于微型光谱仪、扫描仪、光通讯等领域中。     

单Halo全耗尽应变Si 绝缘硅金属氧化物半导体场效应管的阈值电压解析模型

为了改善金属氧化物半导体场效应管(MOSFET) 的短沟道效应(SCE)、 漏致势垒降低(DIBL) 效应, 提高电流的驱动能力, 提出了单Halo 全耗尽应变硅绝缘体 (SOI) MOSFET 结构, 该结构结合了应变Si, 峰值掺杂Halo结构, SOI 三者的优点. 通过求解二维泊松方程, 建立了全耗尽器件表面势和阈值电压的解析模型. 模型中分析了弛豫层中的Ge组分对表面势、表面场强和阈值电压的影响, 不同漏电压对表面势的影响, Halo 掺杂对阈值电压和DIBL的影响.结果表明, 该新结构能够抑制SCE和DIBL效应, 提高载流子的输运效率. 关键词： 应变Si 阈值电压 短沟道效应 漏致势垒降低     

Angular-dependent photoemission studies of indium tin oxide surfaces

Indium tin oxide (ITO) surfaces were treated by solvent cleaning, by plasma of oxygen, argon, nitrogen and by argon ion (Ar⁺) sputtering. Angular-dependent X-ray photoelectron spectroscopy (ADXPS) and ultraviolet photoelectron spectroscopy (UPS) were used to determine the chemical composition, the chemical states and the work function after each treatment. It was found that oxygen plasma and nitrogen plasma chemically reacted with the ITO surfaces. Yet little etching of the surface can be observed after plasma treatments. Among all treatments, oxygen-plasma-treated ITO achieved the highest work function of 4.40 eV, whereas Ar⁺-sputtered ITO surface had the lowest work function of 3.90 eV. The stoichiometry of the ITO surface is shown to be the major controlling factor of the ITO work function. Received: 7 February 2000 / Accepted: 28 March 2000 / Published online: 13 September 2000     

Influence of the initial chirp on the supercontinuum generation in silicon-on-insulator waveguide

We propose a practical method to broaden the bandwidth of supercontinuum generated in silicon-on-insulator (SOI) waveguide by controlling the initial chirp of inputting femtosecond pulses, which has the main impact on the initial stage of the spectral broadening caused by the self-phase modulation (SPM) effect. The numerical results show that the bandwidth and flatness of the supercontinuum generated in SOI waveguide are sensitive to the initial chirp of inputting femtosecond pulses, the supercontinuum bandwidth can be remarkably enhanced by inputting positive chirp femtosecond pulses with a decreased propagation distance required by soliton fission, and the maximum bandwidth of supercontinuum can be increased to 1500 nm.