基于人工复合材料的太赫兹波双波段滤波

本文分别从实验和理论模拟两方面详细的讨论了金属双环和反双环两种亚波长阵列结构在太赫兹波段的双频率响应特性. 这两种双环结构都可以实现双频率调制,金属双环结构表现为两个明显的吸收峰,反双环结构则表现出明显的透过峰. 这两种结构不仅在物理结构上互补,在太赫兹波段的响应也表现为吸收和透过互补的特性. 其中高频响应来源于内环电子振荡,低频影响则来源于外环电子振荡,并且这种结构在太赫兹波段的响应与周期无关. 关键词： 太赫兹 滤波器 亚波长阵列 FDTD     

亚波长金属块阵列中太赫兹波的传输特性研究

利用太赫兹时域光谱技术,研究了亚波长金属块阵列的太赫兹透射光谱特性及金属阵列结构的周期、金属块尺寸等因素对太赫兹透射特性的影响.结合时域有限差分方法,对实验结果进行了数值模拟,并分析了影响太赫兹透射的因素.结果表明:亚波长金属块阵列结构中,THz波的透射极小的位置由金属块的尺寸和周期决定,其透射谷的半高宽随其周期的增大而减小;透射峰值的位置由阵列的周期结构决定,其频率随周期的增加而减小;亚波长金属块结构的透射极小来源于金属块表面局域化电场等离子体的本征频率反射,该局域化电场与金属块结构密切相关,通过改变金属块结构,可以改变其表面电场分布与局域化.研究结果为研制太赫兹波段带阻滤波器提供了有益的参考.     

亚波长金属块阵列中太赫兹波的传输特性研究

利用太赫兹时域光谱技术,研究了亚波长金属块阵列的太赫兹透射光谱特性及金属阵列结构的周期、金属块尺寸等因素对太赫兹透射特性的影响.结合时域有限差分方法,对实验结果进行了数值模拟,并分析了影响太赫兹透射的因素.结果表明:亚波长金属块阵列结构中,THz波的透射极小的位置由金属块的尺寸和周期决定,其透射谷的半高宽随其周期的增大而减小;透射峰值的位置由阵列的周期结构决定,其频率随周期的增加而减小;亚波长金属块结构的透射极小来源于金属块表面局域化电场等离子体的本征频率反射,该局域化电场与金属块结构密切相关,通过改变金属块结构,可以改变其表面电场分布与局域化.研究结果为研制太赫兹波段带阻滤波器提供了有益的参考.     

基于金属孔阵列的聚酰亚胺薄膜太赫兹探测

优化设计了多种不同孔径和形状的太赫兹波段的亚波长金属孔阵列结构,结合超薄低折射率的聚酰亚胺（PI）薄膜,探索了太赫兹时域光谱技术对超薄低折射率的探测灵敏性。利用飞秒微加工技术制备了一系列亚波长金属孔阵列结构,利用太赫兹时域光谱技术测试了阵列结构的反射波谱,获得了强烈的反射共振现象。然后在亚波长金属孔阵列结构背面叠加PI薄膜,结果表明太赫兹反射峰出现了显著低频移动现象。利用这一现象,实现了低至10 m的PI薄膜的有效探测,说明亚波长金属孔阵列结构在太赫兹传感领域对检测超薄低折射率薄膜材料有极强敏感性。收稿日期:; 修订日期:     

太赫兹表面极化激元

作为束缚于表面或界面的电磁波与极性元激发的耦合模量子,表面极化激元是克服衍射极限的核心物理.在紫外、可见以及近红外波段,表面等离子极化激元展现出了亚波长特性,具有高分辨成像等应用,并发展成为"表面等离子极化激元亚波长光学"学科;在中红外波段,表面声子极化激元发挥着同样的作用.太赫兹波段曾是人类认识的空白区域,近三十年来得以高速发展,其战略意义重大.具有克服衍射极限能力的太赫兹表面极化激元同样是小型化与集成化太赫兹器件,以及太赫兹超高分辨成像的重要物理基础.近几年来,对以石墨烯为代表的二维材料的研究突飞猛进,诞生了"石墨烯表面等离子极化激元亚波长光学"这门学科,并贡献于太赫兹领域.本文对可在太赫兹波段工作的人工超构材料、掺杂半导体、二维电子气、二维材料、拓扑绝缘体等结构材料的表面极化激元进行了较为全面的总结与介绍,为研制克服衍射极限的太赫兹集成光子学器件提供可资借鉴的物理基础.     

超大长宽比U型开口谐振器的太赫兹调控特性

近年来,金属亚波长结构由于在负折射材料方面存在巨大应用价值,及可作为太赫兹波段的光学限制器等器件应用,引起了研究者们的广泛关注。本文采用电子束曝光离子束刻蚀的方法在金膜上制备了亚波长的超大长宽比U型开口矩形谐振器阵列结构,利用时域有限差分方法(FDTD)和太赫兹时域光谱技术(THz-TDS)对U型阵列结构的太赫兹波透射光谱响应进行了测量和分析,讨论了透过率对结构几何参数的依赖特性和异常透射的物理机制。通过这种U型开口谐振器能够实现太赫兹波的强局域和场增强,可将太赫兹波局域在波长千分之一的尺寸上,从而实现了太赫兹的异常透射现象,这种超大长宽比的U型开口谐振器可在太赫兹探测、太赫兹成像及其他光学器件的设计上得以应用。     

太赫兹波段表面等离子光子学研究进展

表面等离子光子学是研究金属、 半导体纳米结构材料独特的光学特性, 是目前光子学中最有吸引力、 发展最快的领域之一. 伴随着微/纳制造技术与计算机模拟技术的进步, 表面等离子光子学在可见光、 红外、 太赫兹以及微波频域得到了广泛研究, 在高灵敏生化传感、 亚波长光波导、 近场光学显微、 纳米光刻等领域有潜在的应用价值. 特别是人工超材料的发展, 为自然界长期缺乏响应太赫兹波的材料和器件奠定了基础, 从而也促进了太赫兹波段表面等离子光子学的研究. 本文从太赫兹表面等离子波的激发、 传导、 最新应用及未来发展趋势等几个方面进行了回顾和讨论, 将最新研究成果展示给读者.     

介质填充浅槽周期结构表面上的太赫兹表面等离子体激元

通过在金属表面刻成浅的垂直凹槽,并在槽内填充不同的介质,对金属表面浅槽周期结构上传播的表面等离子体激元的色散特性与填充介质的关系进行了研究.研究表明通过在周期凹槽内填充介质可以有效降低人工表面等离子体激元的渐近频率,并增强金属表面对电磁场的约束.分析了太赫兹波段金属的吸收损耗对人工表面等离子体激元特性的影响,结果显示基于填充介质的浅槽周期表面结构可以获得长距离传输以及场的亚波长约束.通过对波传输的数值仿真,验证了该表面结构在太赫兹波段良好的导波能力.这种表面结构对太赫兹波段新型集成导波器件的设计具有参考价值.     

介质填充浅槽周期结构表面上的太赫兹表面等离子体激元

通过在金属表面刻成浅的垂直凹槽,并在槽内填充不同的介质,对金属表面浅槽周期结构上传播的表面等离子体激元的色散特性与填充介质的关系进行了研究.研究表明通过在周期凹槽内填充介质可以有效降低人工表面等离子体激元的渐近频率,并增强金属表面对电磁场的约束.分析了太赫兹波段金属的吸收损耗对人工表面等离子体激元特性的影响,结果显示基于填充介质的浅槽周期表面结构可以获得长距离传输以及场的亚波长约束.通过对波传输的数值仿真,验证了该表面结构在太赫兹波段良好的导波能力.这种表面结构对太赫兹波段新型集成导波器件的设计具有参考价值.     

太赫兹波段金属阵列结构的透射及反射宽谱偏振特性

基于计算机仿真技术(CST)软件对二维金属光栅阵列在0.1~10THz波段的偏振特性进行了数值分析,利用光刻和金属薄膜工艺在500μm厚的高阻硅衬底上沉积了20nm厚的不同结构周期的金属铜光栅阵列,利用傅里叶变换光谱仪测量了该光栅阵列的透射及反射特性。结果表明:在太赫兹宽谱范围内,该光栅阵列的透射和反射都具有良好的偏振特性,且偏振特性范围可通过调整结构周期进行调节;该研究对太赫兹偏振器的进一步研究及应用提供了参考。     

Direct observation of a transition of a surface plasmon resonance from a photonic crystal effect

Transition of surface-plasmon resonance from out-of-plane photonic crystal effect is observed in a semiconductor array of subwavelength holes by optical pump-terahertz probe measurements. The dielectric properties of the photoexcited array are essentially altered by the intense optical excitation due to photogenerated free carriers. As a result, the array becomes metallic and favors the coupling and propagation of surface plasmons. The photoinduced resonant extremes agree well with the Fano model.     

Localization of Surface Plasmon Waves in Hybrid Photodetectors with Subwavelength Metallic Arrays

The spectral characteristics of the hole photocurrent in plasmon photodetectors based on Ge/Si heterostructures with Ge quantum dots combined with regular arrays of subwavelength apertures of various shapes in a gold film on the semiconductor surface are investigated. Dispersion relations characterizing the propagation of surface plasmon waves along the metal–semiconductor interface are determined from the dependences of the photocurrent on the angle of incidence of light. It is established that the plasmonic enhancement of the photocurrent in rectangular aperture array is suppressed as compared to that in circular and square aperture arrays. It is found that, in hybrid structures with rectangular apertures, there exists a range of wave vectors where the energy of surface plasmons is independent of the wave vector of incident radiation. The results are explained by the excitation of dipole modes localized at rectangular apertures with a large aspect ratio by light waves.     

Extraordinary THz transmission through subwavelength semiconductor slits under antiparallel external magnetic fields

We theoretically study the resonant transmission of electromagnetic waves at the THz frequencies through subwavelength semiconductor slits under external static magnetic fields. The dispersion relations of the surface plasmon polaritons (SPPs) inside a subwavelength slit are analytically derived. It is found that the SPPs propagating along one direction and its reverse are symmetric when parallel external magnetic fields are applied, but are asymmetric when antiparallel external magnetic fields are applied. The transmission properties of periodic subwavelength semiconductor slit arrays with the antiparallel magnetic fields in each unit cell are investigated by the mode expansion technique. The two significant transmission characteristics are observed: (i) The resonant peaks are redshifted with increasing external magnetic fields; (ii) The transmissions in the two opposite directions through the slit arrays are asymmetric. The origin of the transmission asymmetry is reasonably explained by the magnetic-field induced asymmetric SPP propagation losses.     

Nonlinear response of GaAs gratings in the extraordinary transmission regime

We theoretically describe a way to enhance harmonic generation from subwavelength slits milled on semiconductor substrates in strongly absorptive regimes. The metal-like response typical of semiconductors, like GaAs and GaP, triggers enhanced transmission and nonlinear optical phenomena in the deep UV range. We numerically study correlations between linear and nonlinear responses and their intricacies in infinite arrays, and highlight differences between nonlinear surface and magnetic sources, and intrinsic χ((2)) and χ((3)) contributions to harmonic generation. The results show promising efficiencies at wavelengths below 120 nm, and reveal coupling of TE and TM polarizations for pump and harmonic signals. A downconversion process that can regenerate pump photons with polarization orthogonal to the incident pump is also discussed.     

基于超材料的中波红外宽带偏振转换研究

基于硅纳米块阵列和亚波长金属光栅,硅纳米块长轴与金属光栅夹角为45°,本文设计了一种高效、宽带偏振转换结构.模拟计算表明该结构实现了线偏振光90°旋转,在3.4—4.5μm波段偏振转换率大于60%,在3—5μm光谱范围内的转换对比率大于10~4.由于该结构光学性能优异,制备难度低,可以应用于光传输控制.     

Simulation of photodetection using finite-difference time-domain method with application to near-field subwavelength imaging based on nanoscale semiconductor photodetector array

Simulation of detecting photoelectrons using multi-level multi-electron (MLME) finite-difference time-domain (FDTD) method with an application to near-field subwavelength imaging based on semiconductor nanophotodetector (NPD) array is reported. The photocurrents from the photodiode pixels are obtained to explore the resolution of this novel NPD device for subwavelength imaging. One limiting factor of the NPD device is the optical power coupling between adjacent detector pixels. We investigate such power coupling in the presence of absorbing media as well as the spatial distributions of the electric field and photoelectron density using the MLME FDTD simulation. Our results show that the detection resolution is about one tenth of the operating wavelength, which is comparable to that of a near-field scanning optical microscope based on metal clad tapered fiber.     

A Compact Optical Switch via Plasmonics of Subwavelength Circular‐Sharp Hole Arrays in Metal Films

We studied numerically the enhanced optical transmission (EOT) through periodic subwavelength circular‐sharp hole arrays in metallic films with different edge sharp distribution features of unit structures. Detailed studies indicate that the unit structure edge sharp distribution features strongly influence the surface plasmons (SPs). These results demonstrate that the number of edge sharp activated the localized surface plamons (LSP) resonance on the unit structure is changed by rotating the polarization of the incident light, leading to change the infrared transmittance of the array. Moreover, a compact plasmonic switch via periodic circular‐sharp hole arrays based on the dependence of SPs on unit structural edge sharp distributions is proposed. The finding provides a new idea for designing plasmonics devices, and expands the application range of metal micro‐nano structure in the field of optical communications and information processing.     

金催化的硅纳米线的可控制备及光学特性研究

硅纳米线是新型一维半导体纳米材料的典型代表。利用阳极氧化铝薄膜为模版复制出具有有序纳米结构的金膜,在金的催化辅助下对单晶硅进行湿法刻蚀,得到尺寸、形状、分布可控的硅纳米线阵列,并对其光学特性进行了研究。研究结果表明,金代替银作为催化剂,可以有效地抑制二次刻蚀,金的化学性质相对于银更加稳定,克服了银膜在较高的温度或较长刻蚀时间下产生的结构性破坏,得到形貌规整、尺寸可控的硅纳米线阵列。对该阵列在400 nm~1 200 nm波段的反射率、透过率进行了测试,并对比分析了金模板催化与传统方法机理的异同。测试结果表明,相较于传统金属辅助化学刻蚀法,文中提出的金模板催化法制备的硅纳米线阵列尺寸及分布更加均匀可控,在宽光谱范围内的抗反射性得到了显著提高。     

Design and fabrication of antireflective GaN subwavelength grating structures using periodic silica sphere monolayer array patterning

We designed and fabricated gallium nitride (GaN) subwavelength grating (SWG) structures on GaN/sapphire via patterning using the periodic silica sphere monolayer array as an etch mask and a subsequent dry etching for efficient antireflection coatings. Theoretical optimization of GaN SWG structures was performed in terms of their geometrical parameters by the rigorous coupled-wave analysis simulation using a theoretical structural model. The bullet-like parabola-shaped SWGs with a large height-to-diameter ratio (R _H/D) yielded good broadband and wide-angle antireflective surface properties. Considering the R _H/D, the GaN SWG structure using 320-nm silica spheres theoretically and experimentally exhibited the most efficient antireflection property because it provided a linearly graded effective refractive index profile with relatively long relaxation length. For various geometries of the fabricated GaN SWGs on GaN/sapphire, the calculated reflectance results showed a similar tendency with the experimental results.     

Interference-induced enhancement of intensity and energy of a quantum optical field by a subwavelength array of coherent light sources

Recently, we have shown a mechanism that could provide great resonant and nonresonant transmission enhancements of the classical (nonquantum) light waves passed through subwavelength aperture arrays in thin metal films not by the plasmon–polariton waves, but by the constructive interference of diffracted waves (beams generated by the apertures) at the detector placed in the far-field zone. We now present a quantum reformulation of the model. The Hamiltonian describing the phenomenon of interference-induced enhancement and suppression of both the intensity and energy of a quantum optical field is derived. The basic properties of the field energy determining by the Hamiltonian are analyzed. Normally, the interference (addition) of two or more waves causes enhancement or suppression of the light intensity, but not the light energy. The model shows that the phenomenon could be observed experimentally, for instance, by using a subwavelength array of the coherent quantum light-sources (one- and two-dimensional subwavelength apertures, fibers, dipoles, and atoms).