新型半导体开关高压电磁脉冲产生技术

基于独特结构和物理特性的两类高性能新型高压半导体开关漂移阶跃恢复二极管和快速离化开关,提出一种新型高功率高压纳秒电磁脉冲产生方法,其技术路径是通过高压漂移阶跃恢复二极管开关将高贮能电感能量向高压快速离化开关及负载转移,产生高功率、高重复频率纳秒电磁脉冲,并用实验验证该方法在高重复频率（120,200,300 kHz）下产生高功率、高重复频率纳秒脉冲的有效性,输出脉冲电压分别为1.62,1.41,1.36 kV。     

稍不均匀电场中低气压击穿的起始路径研究

稍不均匀电场间隙的起始击穿路径问题对于气体放电触发以及电极表面削蚀有重要意义.为研究低气压击穿工况中起始路径的位置规律,本文建立了一种基于蒙特卡罗碰撞模型与电子运动轨迹假设相结合的路径判断模型(determination of the critical path模型, DCP模型),并以2种电极装置的击穿试验来验证DCP模型的正确性.通过负电极表面的痕迹捕捉和击穿电压的测量可以分别验证DCP模型对起始击穿路径和击穿电压的计算能力.根据试验结果,起始击穿路径在不同压强或流率下会发生转移,且转移趋势与计算结果相符;同时, DCP模型对击穿电压的计算误差不超过7.9%,可初步验证DCP模型的计算精度.在此基础上,利用DCP模型对其他4种典型的电极装置进行数值计算,发现全部击穿案例都存在一些共性:随着间隙压强或流率的升高,最小电压区域((pd) min过渡区)的起始路径转移频繁,并伴随击穿电压上下波动,近似持平,且起始路径几乎都服从较长路径向较短路径的转移规律.最后,通过DCP模型的数值分析,揭示了上述起始路径相关规律的内在机理.     

Superconductor/semiconductor nanostructures on p-type InAs

Recent experimental results for Nb/p-type InAs/Nb Josephson junctions are reviewed. In these devices, the superconducting Nb electrodes are coupled through the native inversion layer at the surface of p-type InAs. Besides the dc and ac Josephson effects, we discuss the opening of a proximity-effect induced energy gap in the density of states of the inversion layer where it is covered by Nb. In field-effect controlled devices, the short electrode separation comparable to the mean free path allows the observation of Fabry–Pérot type resonances in the current–voltage characteristics.     

400 kW高压全固态电源实验研究

 介绍用于高功率微波器件测试的400 kW 脉冲步进调制器高压全固态电源调试和应用研究，包括当负载过荷时使系统切断高压保护速度提高到10 μs内的方法；故障时进入弧道能量的研究；通过改变接地方式对系统管体电流波形测量的影响研究。实验表明：这种原理的大功率全固态电源具有突出的抗干扰性，并且维修方便，效率高，是大功率微波器件热测台的优选方案。     

Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs

This paper reports that multi-recessed gate 4H-SiC MESFETs (metal semiconductor filed effect transistors) with a gate periphery of 5-mm are fabricated and characterized. The multi-recessed region under the gate terminal is applied to improve the gate--drain breakdown voltage and to alleviate the trapping induced instabilities by moving the current path away from the surface of the device. The experimental results demonstrate that microwave output power density, power gain and power-added efficiency for multi-finger 5-mm gate periphery SiC MESFETs with multi-recessed gate structure are about 29%, 1.1dB and 7% higher than those of conventional devices fabricated in this work using the same process.     

Two-dimensional mapping of electro-optic phase retardation in lithium niobate crystals by digital holography

We demonstrate accurate two-dimensional mapping of the phase retardation induced by the electro-optic effect in lithium niobate crystals. Off-axis digital holography is used to investigate congruent z-cut crystals. The spatially resolved optical path difference is interferometrically measured while a linearly rising voltage ramp is applied to the crystal. This procedure provides information on the uniformity of crystals' electro-optic properties and offers the ability to detect the presence of defects that is of fundamental importance for reliable processing of photonic devices.     

Programmable agile beam steering based on a liquid crystal prism

To meet the application need for agile precision beam steering, a novel liquid crystal prism device with a simple structure, convenient control, low cost and applicable performance is presented, and analysed theoretically and experimentally. The relationships between the optical path and the thickness of the liquid crystal cell under different voltages are investigated quantitatively by using a theoretical model. Analysis results show that the optical path profile of the liquid crystal prism has a quasi-linear slope and the standard deviation of the linear slope is less than 16 nm. The slope ratio can be changed by a voltage, which achieves the programmable beam steering and control. Practical liquid crystal prism devices are fabricated. Their deflection angles and wavefront profiles with different voltages are experimentally tested. The results are in good agreement with the simulated results. The results imply that the agile beam steering in a scope of 100 μrad with a micro-rad resolution is substantiated in the device. The two-dimensional beam steering is also achieved by cascading two liquid crystal prism devices.     

Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles

Floating gate devices with nanoparticles embedded in dielectrics have recently attracted much attention due to the fact that these devices operate as non-volatile memories with high speed, high density and low power consumption. In this paper, memory devices containing gold (Au) nanoparticles have been fabricated using e-gun evaporation. The Au nanoparticles are deposited on a very thin SiO₂ layer and are then fully covered by a HfO₂ layer. The HfO₂ is a high-k dielectric and gives good scalability to the fabricated devices. We studied the effect of the deposition parameters to the size and the shape of the Au nanoparticles using capacitance–voltage and conductance–voltage measurements, we demonstrated that the fabricated device can indeed operate as a low-voltage memory device.     

Multiple air-gap filters and constricted mesa lasers – material processing meets the front of optical device technology

Real three-dimensional material structures enable enormous perspectives in the functionality of advanced electronic and optoelectronic III/V semiconductor devices. We report on the technological implementation of surface-micromachined III/V semiconductor devices for optoelectronic applications. Considering fabrication technology, the general principles can be reduced to three fundamental process steps: deposition of a layered heterostructure on a substrate, vertical structurization and horizontal undercutting by selectively removing sacrificial layers. Very useful quality-control elements for precise process control are presented. The basic principles are applied and illustrated in detail by presenting two selected optoelectronic examples. (i) The fabrication technology of buried mushroom stripe lasers is shown. Bent waveguides on homogeneous grating fields are used to obtain chirped gratings, enabling a high potential to tailor specific performances. Excellent optical properties are obtained. (ii) The fabrication technology of vertical optical cavity based tunable single- or multi-membrane devices including air gaps is shown. Record optical tuning characteristics for vertical cavity Fabry–Pérot filters are presented. Single parametric wavelength tuning over 142 nm with an actuation voltage of only 3.2 V is demonstrated. PACS 85.60.-q; 87.80.Mj; 68.65.Ac     

微秒脉冲下极性效应对碳酸丙烯酯击穿场强的影响

通过对比碳酸丙烯酯在针板电极间距分别为0.5、1.0和2.0 mm下的击穿电压大小的实验,研究碳酸丙烯酯的极性效应.实验设备包含一个充电时间在5～20毫秒的电容储能型脉冲型脉冲功率源和一个内置针板电极的击穿试件. 每一组的击穿电压通过示波器显示记录. 三组不同间距下的击穿实验数据表明碳酸丙烯酯的正电极击穿场强高于负电极击穿场强,并且击穿场强随着电极间距的增大而增 大. 对碳酸丙烯酯针板电极的击穿进行了仿真模拟实验. 基于实验结果对碳酸丙烯酯的极性效应给出了相应的解释.     

半导体量子器件物理讲座：第五讲 弹道输运器和量子干涉器件

当器件的尺度小型与电子的平均自由程相当时,电子的输运可以看作弹道输运。文章介绍了隧穿热电子晶体管输运放大器和电子能谱仪两种工作模式下的工作原理以及用共振隧穿热电子晶体管做成的记忆器,如果器件的尺寸进一步减小,电子的波动特性也必须考虑,文章介绍了研究这种器件中的输运特性的方法及量子干涉晶体管和量子反射晶体管的工作原理。     

电子线路多级过电压保护电路的分析

本文基于电子线路的多级过电压保护装置的设计原则,提出了把低通滤波器件和限幅器件组合在一起的组合防雷系统,并采用电磁暂态计算程序EMTP分析了低虎波器元件参数对保护性能的影响和其幅频特性。同时,本文还提出了过电压冲击自动报警与计数系统设计的可行性方案。     

Silicon photonic crystal all-optical logic gates

All-optical logic gates, including OR, XOR, NOT, XNOR, and NAND gates, are realized theoretically in a two-dimensional silicon photonic crystal using the light beam interference effect. The ingenious photonic crystal waveguide component design, the precisely controlled optical path difference, and the elaborate device configuration ensure the simultaneous realization of five types of logic gate with low-power and a contrast ratio between the logic states of “1” and “0” as high as 20 dB. High power is not necessary for operation of these logic gate devices. This offers a simple and effective approach for the realization of integrated all-optical logic devices.     

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Silicon germanium(SiGe) heterojunction bipolar transistor(HBT) on thin silicon-on-insulator(SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology.The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion,which is different from that of a bulk counterpart.A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation.The Early voltage shows a kink with the increase of the reverse base-collector bias.Large differences are observed between SOI devices and their bulk counterparts.The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design,the simulation and the fabrication of high performance SOI SiGe devices and circuits.     

Ab initio analysis of electron-phonon coupling in molecular devices

We report a first principles analysis of electron-phonon coupling in molecular devices under external bias voltage and during current flow. Our theory and computational framework are based on carrying out density functional theory within the Keldysh nonequilibrium Green's function formalism. Using a molecular tunnel junction of a 1,4-benzenedithiolate molecule contacted by two aluminum leads as an example, we analyze which molecular vibrational modes are most relevant to charge transport under nonequilibrium conditions. We find that the low-lying modes are most important. As a function of bias voltage, the electron-phonon coupling strength can change drastically while the vibrational spectrum changes at a few percent level.     

Family of graphene-based superconducting devices

A family of highly sensitive devices based on a graphene nanobridge and superconducting electrodes has been developed, manufactured, and examined. These devices can be used to create a graphene-based integral receiver. A cold-electron bolometer prototype with superconductor-insulator-normal metal tunnel junctions has been studied. Its response to a change in the temperature and external microwave radiation has been measured. A superconducting quantum interferometer with a graphene strip as a weak coupling between superconducting electrodes has been examined. The corresponding modulation of the voltage by a magnetic field at a given current has been measured. The effect of the gate voltage on the resistance of graphene has been analyzed for these samples. To confirm that graphene is single-layer, measurements with the reference samples were performed in high magnetic fields, displaying the half-integer quantum Hall effect.     

Electric field modulation of galvanomagnetic properties of mesoscopic graphite

Electric field effect devices based on mesoscopic graphite are fabricated for galvanomagnetic measurements. Strong modulation of magnetoresistance and Hall resistance as a function of the gate voltage is observed as the sample thickness approaches the screening length. Electric field dependent Landau level formation is detected from Shubnikov-de Haas oscillations. The effective mass of electron and hole carriers has been measured from the temperature dependent behavior of these oscillations.     

HOT-CARRIER GENERATION MECHANISM AND HOT-CARRIER EFFECT IMMUNITY IN DEEP-SUB-MICRON GROOVED-GATE PMOSFETS

Based on the hydrodynamic energy transport model, immunity from the hot-carrier effect in deep-sub-micron grooved-gate p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) is analysed. The results show that hot carriers generated in grooved-gate PMOSFETs are much smaller than those in planar ones, especially for the case of channel lengths lying in the deep-sub-micron and super deep-sub-micron regions. Then, the hot-carrier generation mechanism and the reason why grooved-gate MOS devices can suppress the hot-carrier effect are studied from the viewpoint of physical mechanisms occurring in devices. It is found that the highest hot-carrier generating rate is at a medium gate bias voltage in three stress areas, similar to conventional planar devices. In deep-sub-micron grooved-gate PMOSFETs, the hot-carrier injection gate current is still composed mainly of the hot-electron injection current, and the hole injection current becomes dominant only at an extremely high gate voltage. In order to investigate other influences of the hot-carrier effect on the device characteristics, the degradation of the device performance is studied for both grooved-gate and planar devices at different interface states. The results show that the drift of the device electrical performance induced by the interface states in grooved-gate PMOSFETs is far larger than that in planar devices.     

Pseudospark switches-technological aspects and application

We report results of the development of fast closing switches, so-called pseudospark switches, at Erlangen University. Two different parameter regimes are under investigation: medium power switches (32 kV anode voltage, 30 kA anode current and 0.02 C charge transfer per shot) for pulsed gas discharge lasers and high power switches (30 kV anode voltage, 400 kA anode current and 3.4 C charge transfer per shot) for high current applications. The lifetime of these switches is determined by erosion of the cathode. The total charge transfer of devices with one discharge channel is about 220 kC for the medium and 27 kC for the high power switch. At currents exceeding 45 kA a sudden increase in erosion rate was observed. Multichannel devices are suited to increase lifetime as the current per channel can be reduced. Successful experiments with radial and coaxial arrangements of the discharge channels were performed. In these systems the discharge channels move due to magnetic forces. A skilful use of this phenomena will result in a considerably increase of switch lifetime. Multigap devices enable an increase of anode voltage. A three gap switch has run reliably at an anode voltage of 70 kV     

从电动力学到量子电动力学：纳米光电子器件

纳米尺度下的光电器件的研制与米、毫米、微米尺度下电子器件或光学器件的研制在基本原理与制造技术上有本质的不同。必须采用量子电动力学和介观物理作为基本原理。在量子电动力学中,光子与电子可以相互转化,光子也可以储存在“空腔”中。光一电转换或光一电一光的转换甚至可以在远小于一个光波的尺度内实现（如100nm以下）。基于大量最新现象发现的启示与推动,产生了一种全新的光予技术：纳米光子技术。在这种全新的纳光子技术中,人们将光子电子的输运与转化联合起来进行考虑,非线性光学获得了长足的发展。微电子技术和概念被大量地推广应用于纳光子技术开发。创新型元件如集成激光器、30dB光放大器、效率为30％的1．55μm滤波器等层出不穷地涌现。纳米技术的研发为信息储存、输运和处理开辟了新的天地。进入21世纪,纳米光子技术研究日新月异。在摩尔经验规律的指导下,不断发展的微电子工业的制造精度已进入100nm领域。大规模应用纳米电子、纳米光子技术的时代已经来临。一些新型的光通讯线路已开始应用纳米光子器件。对公众而言,用于照明的LED只是一个应用实例。报告将结合法国国家纳米研究平台的研发成果来阐述纳米光子学的原理和纳米光子器件发展的趋势。