| 新型半导体开关高压电磁脉冲产生技术 |
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| 引用本文： | 梁勤金,邓晓磊,石小燕,潘文武.新型半导体开关高压电磁脉冲产生技术[J].强激光与粒子束,2012,24(2):497-500. |
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| 作者姓名： | 梁勤金 邓晓磊 石小燕 潘文武 |
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| 作者单位： | 1.中国工程物理研究院 应用电子学研究所, 高功率微波技术实验室, 四川 绵阳 621 900; |
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| 基金项目： | 国家高技术发展计划项目 |
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| 摘 要： | 基于独特结构和物理特性的两类高性能新型高压半导体开关漂移阶跃恢复二极管和快速离化开关，提出一种新型高功率高压纳秒电磁脉冲产生方法，其技术路径是通过高压漂移阶跃恢复二极管开关将高贮能电感能量向高压快速离化开关及负载转移，产生高功率、高重复频率纳秒电磁脉冲，并用实验验证该方法在高重复频率（120,200,300 kHz）下产生高功率、高重复频率纳秒脉冲的有效性，输出脉冲电压分别为1.62,1.41,1.36 kV。
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| 关 键 词： | 半导体开关 高压脉冲 高重复频率 电磁脉冲产生 |
| 收稿时间： | 2011/10/10 |
High voltage electromagnetic pulse generation using semiconductor switches |
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| Liang Qinjin
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Deng Xiaolei
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Shi Xiaoyan
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Pan Wenwu.High voltage electromagnetic pulse generation using semiconductor switches[J].High Power Laser and Particle Beams,2012,24(2):497-500. |
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| Authors: | Liang Qinjin Deng Xiaolei Shi Xiaoyan Pan Wenwu |
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| Affiliation: | 1.Laboratory of High Power Microwave Technology,Institute of Applied Electronics,CAEP,P.O.Box 919-1017,Mianyang 621900,China;2.School of Communication and Information Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China |
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| Abstract: | According to the particular structures and working principles of high voltage semiconductor switches, drift step recovery diodes and fast ionization devices, a high pulse repetition frequency(PRF) and high voltage nanosecond electromagnetic pulse generation method is provided. The technology path is to transmit the high energy of storage inductance on the FID and load through the DSRD.The feasibility of the method is tested and verified by experiments under input trigger PRFs as high as 120, 200 and 300 kHz, and the output pulse voltages are 1.62, 1.41 and 1.36 kV, respectively. |
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| Keywords: | semiconductor switch high voltage pulse high pulse repetition frequency electromagnetic pulse generation |
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