LD抽运Nd:LuVO4微片激光器性能研究

报道了一类新型的LD端面抽运Nd:LuVO4微片激光器,讨论了在不同掺杂浓度,不同厚度和不同透过率下的激光性质,测定了在不同抽运功率下,微片最佳激光输出功率与LD抽运温度的关系.在2W抽运功率下获得923mW的1064nm激光输出,阈值为48mW,斜效率为52%.对微片制冷后斜效率提高到59%.     

LD抽运Cr,Tm,Ho∶YAG微片激光器单纵模运转特性的研究

研究了LD抽运的单纵模Cr,Tm,Ho∶YAG微片激光器,激光器厚度为1?mm,在用波长785?nm的LD进行端面抽运时,激光器阈值为1060?mW,单纵模激光最大输出功率为31?mW. 对激光器输出功率随温度变化特性进行了研究,验证了CTH∶YAG晶体的温度敏感性. 还研究了激光器的温度调谐特性,实验测得激光器的温度调谐系数为14?GHz/℃. 关键词： 激光光学 CTH∶YAG微片激光器 LD抽运 单纵模运转     

LD抽运Yb:GSO实现1090 nm低阈值激光运转

用Yb:Gd₂SiO₅(Yb:GSO)晶体实现激光运转.利用940 nm的二极管激光器作为抽运源，得到Yb:GSO激光器的激光中心波长为1090 nm，抽运阈值功率密度仅为1.27 kW/cm²，小于Yb:YAG的理论阈值1.53 kW/cm².利用2%的输出镜得到最大输出功率为360 mW，相应的斜效率为19%. 关键词： Yb:GSO晶体 激光二极管抽运 阈值     

激光二极管抽运Nd∶YVO4晶体1342nm和671nm激光器研究

报道了激光二极管抽运的Nd∶YVO₄晶体1342和671nm激光特性.1342nm激光最大输出功率为1.75W，光-光转换效率为32.1%，斜效率为43%.利用Ⅰ类非临界相位匹配LBO晶体腔内倍频，当输入抽运功率为6W时，获得功率为502mW的671nm激光输出，光-光转换效率超过8.3%；当671nm激光输出功率为400mW时，短期的不稳定度小于2%. 关键词：     

高稳定输出功率的全固态激光器

介绍了一种高稳定性输出功率的连续LD抽运Nd∶YVO₄全固态532 nm激光器,输出功率为144 mW,采用LD抽运Nd∶YVO₄晶体,KTP晶体腔内倍频方式工作。该激光器采用热电制冷器(TEC)实现对LD、KTP晶体的高精度温控,其温控精度达到±0.1 ℃。建立了LD电流与输出功率的非线性曲线,通过硅光电池检测激光输出功率实现激光功率实时光反馈,采用阈值式PI控制算法进一步降低稳态误差,通过对抽运驱动电流实施反馈控制获得了波动小于±1%的长时间高稳定功率输出。     

LD端面抽运Nd:YAG 1319/1338nm双波长激光器研究

从LD端面抽运固体激光器的激光阈值公式出发,建立了双波长激光同时振荡的阈值条件,理论计算了腔镜对于两个波长的透过率关系,实现了LD端面抽运Nd:YAG 1319nm/1338nm双波长激光连续和准连续输出.双波长激光连续输出功率可达6W,斜效率为30%;准连续输出功率在重复频率50kHz时可达4.75W,斜效率为24.73%,脉冲宽度为55.05ns;腔内插入布儒斯特片,在重复频率为50kHz时,双波长激光准连续线偏振输出功率可达2.22W,不稳定性小于0.52%,M² 关键词： 端泵Nd:YAG激光器 1319nm/1338nm双波长 声光调Q 太赫兹波     

LD端面抽运c切Nd:YVO4自拉曼倍频589 nm黄光激光研究

报道了LD端面抽运c切Nd:YVO₄自拉曼倍频黄光激光器的研究. 采用10 mm长,二类临界相位匹配角 (θ=69°,ø=0°)切割的KTP晶体作为倍频晶体. 考虑到c切Nd:YVO₄跃迁截面较小,所以通过对谐振腔及晶体膜系的严格设计,减少腔内插入损耗和衍射损耗. 最终在脉冲重复率为10 kHz,抽运功率为11.2 W下,获得了最高570 mW的倍频黄光激光输出,对应抽运光到倍频黄光的转化效率约为 关键词： 拉曼激光 c切Nd:YVO₄')" href="#">c切Nd:YVO₄ 589 nm 黄光激光     

LD抽运Cr,Tm,Ho:YAG微片激光器单纵模运转特性的研究

研究了LD抽运的单纵模Cr,Tm,Ho:YAG微片激光器,激光器厚度为1mm,在用波长785nm的LD进行端面抽运时,激光器阈值为1060mW,单纵模激光最大输出功率为31mW. 对激光器输出功率随温度变化特性进行了研究,验证了CTH:YAG晶体的温度敏感性. 还研究了激光器的温度调谐特性,实验测得激光器的温度调谐系数为1.4GHz/℃.     

紧凑型LD端面抽运Nd:YAG内腔三倍频准连续355 nm紫外激光器

报道了一台LD端面抽运Nd:YAG晶体内腔三倍频355 nm激光高效率、高峰值功率准连续输出的全固态紫外激光器.激光腔采用紧凑型平平直腔,腔长仅106 mm.当注入抽运功率为5.73 W、重复频率为9 kHz时,获得163 mW的355 nm激光准连续输出,光光转换效率达到最高2.84％.当注入抽运功率为6.7 W重复频率为5 kHz时,获得最高174 mW的355 nm激光准连续输出,输出功率短期不稳定性为5％,光束质量因子M²为3.79.当注入抽运功率为5.73 W、重复频率为2 kHz时,获得112 mW的355 nm激光准连续输出,峰值功率最高达到9.15 kW.通过采用内腔倍频技术和设计合理的腔结构,实现了中小功率准连续输出的全固态紫外激光器的小型化、便携化,进一步拓宽了紫外激光器的应用领域. 关键词： LD端面抽运 内腔三倍频 Q')" href="#">声光调Q 紫外激光     

高效率LD端面抽运准连续355 nm激光器

报道了一台激光二极管（LD）端面抽运Nd：YVO₄晶体腔内倍频和腔外和频相结合的声光调Q准连续355 nm 紫外激光器。采用LD端面抽运双侧翼键合YVO₄基质的Nd：YVO₄晶体,在腔内置入Ⅰ类相位匹配的LiB₃O₅（LBO）晶体进行倍频实现1 064 nm和532 nm双波长准连续激光输出,通过消色差透镜将双波长激光聚焦耦合到Ⅱ类相位匹配的LBO 晶体中进行和频,并采用双向和频光路,获得了高效率、高光束质量、高重复频率的准连续355 nm 紫外激光输出。在抽运功率为28.6 W、重复频率为20 kHz时,355 nm激光最大输出功率4.2 W,脉宽为20.6 ns,光-光转换效率为14.7%,激光器光束质量因子M_x²和M_y²分别为1.29和1.23。     

激光二极管端泵微片固体激光器的研究

本文介绍了一种用波长为809nm的激光二极管(LD)端面泵浦厚度为1mm的微片Nd:YVO4全固化固体激光器。器件结构上采用了一种独特的光学系统,该系统由分别用于LD激光束的耦合和聚焦的两部分组成。由Nd:YVO4的一个平面与一个曲率半径为21mm的球面镜组成半共焦腔,以获得高的转换效率。文中详细讨论了单横模运转时的泵浦光与激光腔模之间的匹配问题。当泵浦光功率为400mW时,获得152mW的1064nm波长的TEM00模激光输出。器件阈值功率为48.3mW,总的光-光转换效率为38%,斜效率为43%.     

Characteristics of Nd：GdVO4 Laser with Different Nd-Doping Concentrations

We report the properties of a compact diode-pumped continuous-wave Nd：GdV04 laser with a linear cavity and different Nd-doped laser crystals. In a 0.2at.% Nd-doped Nd：GdVO4 laser, 1.54 W output laser power is achieved at 912nm wavelength with a slope efficiency of 24.8% at an absorbed pump power of 9.4W. With 0.3at.% Nd-doping concentration, we can obtain the either single-wavelength emission at 1064nm or 912nm or the dual-wavelength emission at 1064nm and 912nm by controlling the incident pump power. From an incident pump power of 11.6 W, the 1064nm emission between ^4Fa/2 and ^4I11/2 is suppressed completely by the 912nm emission between ^4Fa/2 and ^4I9/2. We obtain 670 mW output of the 912nm single-wavelength laser emission with a slope efficiency of 5.5% by taking an incident pump power of 18.4 W. Using a Nd：GdV04 laser with 0.4at.% Nd-doping concentration, we obtain either the single-wavelength emission at 1064nm or the dual-wavelength emission at both 1064nm and 912nm by increasing the incident pump power. We observe a strong competition process in the dualavelength laser.     

Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

2041.3 nm/2054.6 nm simultaneous dual-wavelength single-longitudinal-mode Tm,Ho:YVO<Subscript>4</Subscript> microchip laser

We report a single-longitudinal-mode CW diode-pumped Tm, Ho: YVO₄ microchip laser emitting at both 2041.3 and 2054.6 nm. At each wavelength, the laser has a single longitudinal mode. The total single-longitudinal-mode output power reaches 185 mW with 20.4% optical conversion efficiency at 905 mW incident pump power.     

Diode-end-pumped Tm,Ho:YVO<Subscript>4</Subscript> microchip laser at room temperature

Room temperature Tm, Ho:YVO₄ microchip laser operated around 2 μm was demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, a maximum output power of 47 mW was obtained by using a 0.25 mm length crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 9.1%. Increasing the temperature to 288 K, as much as 16.5 mW 2052.3 nm single-longitudinal-mode laser was achieved. The M ² factor was measured to be 1.4.     

Diode-pumped Nd:LuVO<Subscript>4</Subscript>-Nd:YVO<Subscript>4</Subscript> laser at 492 nm with intracavity sum-frequency-mixing in LiB<Subscript>3</Subscript>O<Subscript>6</Subscript>

We present for the first time a Nd:YVO₄ laser emitting at 1064 nm intracavity pumped by a 916 nm diode-pumped Nd:LuVO₄ laser. A 809 nm laser diode is used to pump the Nd:LuVO₄ crystal emitting at 916 nm, a Nd:YVO₄ laser crystal was pumped at 916 nm and lased at 1064 nm. Intracavity sum-frequency mixing at 916 and 1064 nm was then realized in a LiB₃O₆ (LBO) crystal to reach the blue range. We obtained a continuous-wave output power of 216 mW at 492 nm under 19.6 W of incident pump power at 809 nm.     

LD end-pumped passively mode-locked Nd:YVO<Subscript>4</Subscript> laser with single-walled carbon nanotubes

We demonstrate a LD end-pumped passively mode-locked Nd:YVO₄ laser using a single-walled carbon nanotubes saturable absorber (SWCNT-SA). The SWCNT wafer was fabricated by electric arc discharge method on quartz substrate with absorption wavelength of 1064 nm. At the absorbed pump of 15.8 W, an output power of 750 mW CW (continuous wave) mode-locked laser pulse was achieved with the repetition of 79.7 MHz, corresponding to optical-optical efficiency of 4.75%.     

Dual-wavelength laser operation at 1064 and 914 nm in two Nd:YVO<Subscript>4</Subscript> crystals

We present for the first time a dual-wavelength laser operation at 1064 and 914 nm in two NdYVO₄ crystals. A 879 nm laser diode is used to pump the first Nd:YVO₄ crystal emitting at 914 nm, and the second Nd:YVO₄ laser emitting at 1064 nm intracavity pumped at 914 nm. A total output power of 4.28 W at the two fundamental wavelengths was achieved at the absorbed pump power of 13.8 W. The M² values for 914 and 1064 nm lights at the maximum output power were found to be around 1.3 and 1.1, respectively.     

Stable MHz-repetition-rate passively Q-switched microchip laser frequency doubled by MgO:PPLN

We present an Nd³⁺:YVO₄ microchip laser that is passively Q-switched by a semiconductor saturable absorber mirror. The system generates 520 ps pulses at 1064 nm with 340 mW average output power at up to 2.3 MHz repetition rate. Single longitudinal and transverse mode operation with a peak-to-peak timing jitter less than 1 % is achieved. We discuss the influence of different setup parameters by using numerical simulations of the coupled rate equations and FEM simulations of the thermal management. The infrared light was frequency doubled in an MgO:PPLN crystal with up to 75 % conversion efficiency, which to our knowledge is the highest conversion efficiency that was ever achieved with passively Q-switched microchip lasers.