A comparative study on diode-pumped continuous wave Tm:Ho:YVO<Subscript>4</Subscript> and Tm:Ho:GdVO<Subscript>4</Subscript> lasers

In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 μm range, Tm:Ho:YVO₄ microchip laser and Tm:Ho:GdVO₄ microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO₄ laser and Tm:Ho:GdVO₄ laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO₄ laser, Tm:Ho:YVO₄ laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO₄ laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO₄ laser.     

Diode-pumped Nd<Superscript>3+</Superscript>:YAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> laser at 1338 nm

A high-power diode -pumped Nd³⁺:YAl₃(BO₃)₄ (Nd:YAB) laser emitting at 1338 nm is described. At the incident pump power of 9.8 W, as high as 734 mW of continuous-wave (CW) output power at 1338 nm is achieved. The slope efficiency with respect to the incident pump power was 9.0%. To the best of our knowledge, this is the first demonstration of such a laser system. The output power stability over 60 min is better than 2.6%. The laser beam quality M ² factor is 1.21.     

Continuous wave laser operation of Yb<Superscript>3+</Superscript>:YVO<Subscript>4</Subscript>

We have demonstrated the continuous wave laser operation of Yb³⁺:YVO₄. For Ti:Al₂O₃ laser pumping at 985 nm, a maximum slope efficiency of 41.1% and a threshold pump power of 76 mW were obtained. The maximum output power was 433 mW at a laser wavelength of 1037 nm.Using a cw diode laser around 974 nm as a pump source, a slope efficiency of 10.9% and a maximum output power of 152 mW were achieved at a laser wavelength of 1039 nm. The laser threshold pump power was 608 mW with respect to the absorbed pump power. The effective emission cross-sections for the ²F_5/2²F_7/2 transition were determined using the Füchtbauer–Ladenburg equation. The maxima of the effective absorption and emission cross-sections were found at 984.5 nm (6.74×10^-20 cm²) in -po larization and 985.5 nm (4.28×10^-20 cm²) also in -p olarization. The upper laser level lifetime was measured with suppression of radiation trapping and is around 318 s. PACS 42.55.Rz; 42.55.Xi; 42.70.Hj     

Spectroscopy and laser properties of Tm<Superscript>3+</Superscript>:KY(WO<Subscript>4</Subscript>)<Subscript>2</Subscript> crystal

The polarized absorption spectra of Tm³⁺-doped potassium yttrium tungstate (Tm:KY(WO₄)₂) crystal at room temperature were measured. The emission spectrum and lifetime of the ³ F ₄ excited state were determined. Using standard and modified Judd–Ofelt theories, the intensity parameters and the radiative lifetimes were calculated and good agreement with the experimental results was obtained for both theories. Continuous-wave laser operation in Tm:KYW crystal under laser diode pumping at 802 nm and 1750 nm was demonstrated with slope efficiency of 53% and 28% and output power of about 555 mW and 86 mW, respectively. PACS 42.55.Xi; 42.60.Pk; 42.70.Hj     

Diode-pumped Nd:CaYAlO<Subscript>4</Subscript>-KTP intracavity-doubled green laser at 540 nm

It is reported that efficient continuous-wave (CW) green laser generation at 540 nm in a KTP crystal at type-II phase matching direction performed with a diode-pumped Nd:CaYAlO₄ laser. With incident pump power of 18.2 W, output power of 324 mW at 540 nm has been obtained using a 5 mm-long KTP crystal. At the output power level of 324 mW, the output stability is better than 2.8%. The beam quality M ² values were equal to 1.34 and 1.22 in X and Y directions, respectively.     

Diode-pumped Pr<Superscript>3+</Superscript>:YAlO<Subscript>3</Subscript>/LBO violet laser at 374 nm

We report a diode-pumped Pr³⁺:YAlO₃ laser emitting at 747 nm. A power of 232 mW at 747 nm has been achieved in continuous-wave operation with a diode emitting 2 W at 448 nm. Furthermore, intracavity second-harmonic generation in continuous-wave mode has also been demonstrated with a power of 52 mW at 374 nm by using a LBO nonlinear crystal. The fluctuation of the violet output power was better than 2.3%. The beam quality M ² value is 2.2.     

Efficient blue light generated by intracavity frequency doubling of a 937 nm Nd:GGG laser with BiB<Subscript>3</Subscript>O<Subscript>6</Subscript>

Efficient CW intracavity frequency doubling of a diode-end-pumped Nd:GGG laser operating on ⁴ F _3/2 → ⁴ I _9/2 transitions at 937 nm has been demonstrated. A 10-mm-long BiB₃O₆(BiBO) crystal, cut for critical type I phase matching, was used for the intracavity frequency doubling of the laser. A maximum output power of 350 mW in the blue spectral range at 469 nm has been achieved at 18.3 W of pump power. The M² factors are 1.18 and 1.29 in X and Y directions, respectively.     

Diode pumped Nd:Lu<Subscript>0.5</Subscript>Y<Subscript>0.5</Subscript>VO<Subscript>4</Subscript>-LBO red laser at 671 nm

We report a efficient compact red laser at 671 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode pumped Nd:Lu_0.5Y_0.5VO₄ laser on the ⁴ F _3/2-⁴ I _13/2 transition at 1342 nm. An LBO crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an absorbed pump power of 17.8 W, as high as 2.25 W of continuous wave output power at 671 nm is achieved with 10-mm-long LBO. The optical-to-optical conversion efficiency is up to 12.6%, and the fluctuation of the red output power was better than 3.6% in the given 30 min.     

Upconversion Based Tunable White-Light Generation in Ln:Y<Subscript>2</Subscript>O<Subscript>3</Subscript> Nanocrystalline Phosphor (Ln = Tm/Er/Yb)

We report the generation of efficient white light based on upconversion (UC) in Tm³⁺/Er³⁺/Yb³⁺:Y₂O₃ nanocrystalline phosphor synthesized by simple and cost effective solution combustion technique on 976 nm laser excitation. The calculated color coordinates (using 1931 CIE standard) for samples annealed at different temperatures vary from (0.16, 0.30) to (0.32, 0.33) with dopant concentration, annealing temperature and the pump power; thus providing a wide color tunability including the white one. White emission is observed even at a very low laser power (60 mW). The maximum upconversion efficiency obtained for white emission is 2.79% with the color coordinates (0.30, 0.32) at laser power of 420 mW which is quite close to the standard white color coordinates.     

Multilevel resistance switching of Ag/Nb-doped SrTiO<Subscript>3</Subscript>/Ti structure

Rectifying and photovoltaic properties of a La_0.7Sr_0.3CoO_3−σ /Si heterostructure have been experimentally studied. The heterostructure exhibits a rectifying behavior, similar to that of the traditional diode. A photovoltaic effect is observed when the heterostructure is exposed to the laser with a wavelength of 532 nm and a power of 6 mW/mm². It is interesting to note that the peak photovoltages initially increase with decreasing temperature, followed by a decrease at T<220 K. This reveals that the photovoltaic effect can be modulated by the intrinsic properties of the La_0.7Sr_0.3CoO_3−σ layer.     

Timing-jitter reduced high-repetition-rate Q-switched Nd:YVO<Subscript>4</Subscript>/Cr<Superscript>4+</Superscript>:YAG micro laser with low pump power

We report a high repetition rate Q-switched Nd:YVO₄/Cr⁴⁺:YAG micro laser with small pump power. Unwanted defects in pulse train, which are inherently large in passively Q-switched laser, was simply minimized by controlling temperature of Nd:YVO₄/Cr⁴⁺:YAG medium. When T ₀ = 90% Cr⁴⁺:YAG and R _OC = 90% output coupler were used, Q-switched Nd:YVO₄/Cr⁴⁺:YAG micro laser showed the optimum output; maximum output power of 58 mW, optical-to-optical efficiency of 9.1%, repetition rate of 1.1 MHz, and pulse width of 57 ns were achieved with 640 mW pumping. MHz-order repetition rate in Nd:YVO₄/Cr⁴⁺:YAG Q-switched laser with low pumping (<1 W) is the highest value to the best of our knowledge.     

Spectroscopy,continuous-wave and <Emphasis Type="Italic">Q</Emphasis>-switched diode-pumped laser operation of Er<Superscript>3+</Superscript>,Yb<Superscript>3+</Superscript>:YVO<Subscript>4</Subscript> crystal

We report on the spectroscopy and, for the first time to our knowledge, continuous-wave and Q-switched diode-pumped laser operation of Er,Yb:YVO₄ crystal. Absorption and emission spectra of the crystal were determined. Lifetimes of Er^{3+ 4} I _13/2 and ⁴ I _11/2 levels that define laser performance of the crystal were measured and parameters of energy transfer between Yb³⁺ and Er³⁺ ions were estimated. cw output power of 115 mW with slope efficiency of 5.4% was achieved at 1604 nm. In the Q-switched mode an average output power of 81 mW with slope efficiency of 3.5% and pulse duration of 150 ns was obtained. In quasi-cw regime maximal peak power of 610 mW with slope efficiency of 6.7% was demonstrated. PACS 42.55.Xi; 42.60.Gd; 42.70.Hj     

Intracavity sum-frequency generation of CW blue light in Nd:LuVO<Subscript>4</Subscript> laser

We report for the first time a continuous-wave (CW) blue laser emission by sum-frequency mixing in Nd:LuVO₄ crystal. Using type-I critical phase-matching (CPM) LBO crystal, a blue laser at 493 nm is obtained by 1066 and 916 nm intracavity sum-frequency mixing. The maximum laser output power of 520 mW is obtained when an incident pump laser of 18.2 W is used. At the output power level of 520 mW, the output stability is better than 2.8%. The beam quality M ² value is are about 1.22 and 1.31 in both horizontal and vertical dimensions respectively.     

All-solid-state CW Nd:GdVO<Subscript>4</Subscript>-LBO red laser under direct 912 nm pumping

We report a red laser at 670.5 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a 1341 nm Nd:GdVO₄ laser under in-band diode pumping at 912 nm. An LBO crystal, cut for critical type I phase matching is used for second harmonic generation of the laser. At an incident pump power of 8.9 W, as high as 347 mW of CW output power at 670.5 nm is achieved. The fluctuation of the red output power was better than 3.7% in the given 30 min, and the beam quality factor M ² is 1.65.     

Efficient and compact intracavity-frequency-doubled Nd:LuVO<Subscript>4</Subscript>/LBO laser at 538 nm end-pumped by a fiber-coupled laser diode

We report a diode-pumped Nd:LuVO₄ laser emitting at 1076 nm, based on the ⁴ F _3/2−⁴ I _11/2 transition, generally used for a 1066 nm emission. A power of 689 mW at 1076 nm has been achieved in continuous-wave (CW) operation with a fiber-coupled laser diode emitting 17.8 W at 809 nm. Intracavity second-harmonic generation (SHG) in CW mode has also been demonstrated with a power of 105 mW at 538 nm by using a LiB₃O₅ (LBO) nonlinear crystal.     

Diode-pumped CW Nd:YAG laser at 1116 nm based on the <Superscript>4</Superscript><Emphasis Type="Italic">F</Emphasis><Subscript>3/2</Subscript>-<Superscript>4</Superscript><Emphasis Type="Italic">I</Emphasis><Subscript>11/2</Subscript> transition

We describe the output performances of the 1116 nm ⁴ F _3/2-⁴ I _11/2 transition (generally used for a 1064 nm transition) in Nd:YAG under in-band pumping with diode laser at the 809 nm wavelength. An end-pumped Nd:YAG crystal yielded 680 mW of continuous-wave (CW) output power for 18.2 W of incident pump power. Moreover, intracavity second-harmonic generation (SHG) has also been achieved with a power of 97 mW at 558 nm by using a LiB₃O₅ (LBO) nonlinear crystal. The yellow-green beam quality factor M ² was less than 1.21. The yellow-green power stability was less 2.5% in 4 h.     

Diode pumped Pr<Superscript>3+</Superscript>:LiYF<Subscript>4</Subscript>-BBO ultraviolet laser at 320 nm

A diode pumped Pr³⁺:LiYF₄ laser at 639.5 nm has been demonstrated. With an incident pump power of 920 mW, the maximum red output power was 272 mW. Moreover, intracavity second-harmonic generation (SHG) has also been achieved with a maximum ultraviolet power of 23 mW by using a β-BaB₂O₄ (BBO) nonlinear crystal. To the best of our knowledge, this is the first report on continuous-wave ultraviolet generation by intracavity frequency doubling Pr³⁺:LiYF₄ laser.     

Efficient Nd:Y<Subscript>0.36</Subscript>Gd<Subscript>0.64</Subscript>VO<Subscript>4</Subscript>-GdCa<Subscript>4</Subscript>O(BO<Subscript>3</Subscript>)<Subscript>3</Subscript> red laser under diode pumping into the emitting level

We report a red laser at 671 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1342 nm Nd:Y_0.36Gd_0.64VO₄ laser under diode pumping into the emitting level ⁴ F _3/2. An GdCa₄O(BO₃)₃ (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 1.12 W of cw output power at 671 nm is achieved. The optical-to-optical conversion efficiency is up to 6.3%, and the fluctuation of the red output power was better than 3.5% in the given 30 min.     

High slope efficiency and low threshold in a laser-diode-pumped passively Q-switched ion-implanted Nd:YVO<Subscript>4</Subscript> planar waveguide laser with GaAs saturable absorber

A passively Q-switched waveguide laser, to our knowledge, has been firstly demonstrated in Nd: YVO₄ crystal formed by 3 MeV Si⁺ ion implantation at a dose of 1 × 10¹⁵ ions/cm² at room temperature, in which GaAs was used as saturable absorber. The dependences of the average output power, pulse width, pulse repetition rate on absorbed pump power have been measured at different output plane mirror transmissions. At an absorbed pump power of 78.8 mW and output transmission of 20%, the shortest pulse width of 3.88 ns was obtained, corresponding to the peak power and single pulse energy of 212 W and 0.82 μJ, respectively. The threshold pump power was as low as 40 mW, and the slope efficiency was about 64.5% when the absorbed pump power was lower than 70 mW.     

A comparative study on diode-pumped single-frequency Tm:YAG and Tm:GdVO<Subscript>4</Subscript> lasers

In this paper, we present experimental results concerning on the laser characteristics of Tm:YAG laser and Tm: GdVO₄ laser. At room temperature, the maximum output power of Tm:YAG laser and Tm:GdVO₄ laser is 210 and 145 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:GdVO₄ laser, Tm:YAG laser can operate on single frequency with high power easily. As much as 60 mW of 2013.9 nm single-longitudinal-mode (SLM) laser was achieved for Tm:YAG laser. For Tm:GdVO₄ laser 51 mW of 1919.7 nm SLM laser was achieved. The SLM Tm:YAG laser is better for using as a seed laser for coherent wind measurements and differential absorption LIDAR systems.