自旋霍尔纳米振荡器的非线性动力学及其应用

自旋霍尔纳米振荡器利用电流产生的自旋轨道力矩驱动磁性薄膜中磁矩进行高频进动，能在微纳尺度下实现全电学调控的相干自旋波和微波信号，是一类新型的纳米自旋电子学器件，在信息存储、处理和通信方面具有广泛的应用前景。基于强自旋轨道矩效应，人们近期在各类铁 磁/非磁重金属构成的双层薄膜结构中，已实现了多种不同自旋波模式的电学激发和调控，并对 其复杂的非线性动力学特性进行了深入的探究。基于这些前期的研究结果与最新的进展，我们在 本综述中对“对三角”结构的纳米间隙型、“蝴蝶结”型、纳米线型、垂直纳米点接触型以及阵 列等具有各类器件结构的自旋霍尔纳米振荡器所体现出来的丰富非线性动力学特性进行了详细讨 论与归纳，并对其在新型低能耗量子磁振子自旋器件和非冯诺依曼架构的自旋型人工神经网络计 算方面的潜在应用也进行了探讨。     

磁性金属纳米结构的畴壁特性与磁逻辑电路构筑

自旋电子学由于其丰富的物理内涵和广泛的应用前景受到学术界和工业界的高度重视,成为近年来凝聚态物理和信息技术领域关注的焦点。本文介绍了利用磁性金属纳米结构实现作为自旋电子器件基础的自旋注入的方法,特别涉及利用铁磁金属纳米点接触结构钉扎磁畴的特点,研究自旋极化电流与磁畴壁的相互作用规律, 理解纳米结构中畴壁的动力学行为,并以此为基础构筑结构简单、性能优异的全金属磁逻辑电路,从而实现了由电信号驱动,通过电信号检测,并与CMOS技术兼容的目的。     

Spin Thermoelectric Effects in a Three-Terminal Double-Dot Interferometer

We theoretically investigate the thermoelectric properties of a three-terminal double-dot interferometer with Rashba spin-orbit interaction. It is found that with some temperature distributions a thermal spin current can even be produced without the help of magnetic flux and by tuning the spin interference effect in the system, a pure spin or fully spin-polarized current can be driven by temperature differences. For the cases that two of the terminals are held at the same temperature, the charge (spin) thermopower and the charge (spin) figure of merit are defined and calculated in the linear response regime. With some choices of the system parameters the calculated spin and charge thermopowers are of the same order of magnitude and the charge figure of merit can exceed 1.     

Anisotropic spin-dependent thermopower and current in ferromagnetic graphene junctions

We study the spin-dependent thermoelectric transport through two-dimensional normal/ferromagnetic/normal/ferromagnetic/normal graphene (NG/FG/NG/FG/NG) junctions. It is found that both charge and spin thermopowers depend on the FGʼs magnetization direction and exhibit an anisotropic behavior. Interestingly, the spin thermopower can be as large as the charge thermopower and even can exceed the latter in magnitude. Moreover, the pure spin thermopower and spin current emerge in this device. The results obtained here suggest a feasible way of enhancing thermospin effects and generating the pure spin current in two-dimensional graphene.     

石墨烯沟道全自旋逻辑器件开关特性

由于石墨烯的电导率相比典型的金属材料更大,自旋弛豫时间更长,自旋轨道相互作用更弱,从而在相同的注入电流情况下,自旋电流在石墨烯材料中的耗散作用更弱.基于自旋传输和磁化动力学耦合模型,研究了石墨烯沟道全自旋逻辑器件的开关特性.结果显示,在相同的电源电压下和器件尺寸下,石墨烯沟道材料的全自旋逻辑器件磁矩翻转时间比Cu沟道更短,流入输出纳磁体的自旋电流更大.同时,长度越短、宽度越窄的沟道其开关时间更短,功耗更小.在满足磁体磁矩翻转的临界开关电流的情况下,石墨烯沟道的可靠工作长度也显著大于Cu沟道.所以石墨烯材料是相比于金属材料更理想的沟道材料.另外,通过合理选择沟道尺寸,能进一步降低器件开关时间和功耗.上述结论为全自旋逻辑器件的优化设计与应用提供了理论参考.     

氮化硼纳米带功能化碳纳米管的热自旋输运性质

热自旋电子学器件结合了自旋电子学和热电子学各自的优点,对人类可持续发展具有重要作用.本文研究了锯齿形BN纳米带(ZBNRs)共价功能化碳纳米管(SWCNT)的电子结构,发现ZBNRs-B-(6,6)SWCNT为磁性半金属,nZBNRs-B-(6,6)SWCNT(n=2—8)为磁性金属;nZBNRs-N-(6,6)SWCNT(n=1—8)为双极化铁磁半导体;4ZBNRs-B-(4,4)SWCNT和4ZBNRs-N-(4,4)SWCNT为磁性半金属,4ZBNRs-B-(m,m)SWCNT(m=5—9)为磁性金属;4ZBNRs-N-(m,m)SWCNT(m=5—9)为双极化铁磁半导体.然后,基于锯齿形BN纳米带共价功能化碳纳米管设计了新型热自旋电子学器件,发现基于ZBNRs-N-(6,6)SWCNT的器件具有热自旋过滤效应;而8ZBNRs-N-(6,6)SWCNT和nZBNRs-B-(6,6)SWCNT(n=1,8)都存在自旋相关塞贝克效应.这些发现表明BN纳米带功能化碳纳米管在热自旋电子学器件方面具有潜在的应用.     

Detection of spin current through a quantum dot with Majorana bound states

The spin transport properties are theoretically investigated when a quantum dot(QD) is side-coupled to Majorana bound states(MBSs) driven by a symmetric dipolar spin battery. It is found that MBSs have a great effect on spin transport properties. The peak-to-valley ratio of the spin current decreases as the coupling strength between the MBS and the QD increases. Moreover, a non-zero charge current with two resonance peaks appears in the system. In the extreme case where the dot–MBS coupling strength is strong enough, the spin current and the charge current are both constants in the non-resonance peak range. When considering the effect of the Zeeman energy, it is interesting that the resonance peak at the higher energy appears one shoulder. And the shoulder turns into a peak when the Zeeman energy is big enough. In addition, the coupling strength between the two MBSs weakens their effects on the currents of the system. These results are helpful for understanding the MBSs signature in the transport spectra.     

Nonlocal Andreev reflection with Rashba spin-orbital interaction in a triple-quantum-dot ring

We theoretically studied the nonlocal Andreev reflection with Rashba spin-orbital interaction in a triple-quantumdot(QD) ring,which is introduced as Rashba spin-orbital interaction to act locally on one component quantum dot.It is found that the electronic current and spin current are sensitive to the systematic parameters.The interdot spin-flip term does not play a leading role in causing electronic and spin currents.Otherwise the spin precessing term leads to shift of the peaks of the the spin-up and spin-down electronic currents in different directions and results in the spin current.Moreover,the spin-orbital interaction suppresses the nonlocal Andreev reflection,so we cannot obtain the pure spin current.     

Controllable Spin Polarization of Charge Current by Rashba Spin Orbital Coupling

We report a theoretic study on modulating the spin polarization of charge current in a mesoscopic four-terminal device of cross structure by using the inverse spin hall effect. The scattering region of device is a two-dimensional electron gas (2DEG) with Rashba spin orbital interaction (RSOI), one of lead is ferromagnetic metal and other three leads are spin-degenerate normal metals. By using Landauer-Büttiker formalism, we found that when alongitudinal charge current flows through 2DEG scattering region from FM lead by external bias, the transverse current can be either a pure spin current or full-polarized charge current due to the combined effect of spin hall effect and its inverse process, and the polarization of this transverse current can be easily controlled by several device parameters such as the Fermi energy, ferromagnetic magnetization, and the RSOI constant. Our method may pave a new way to control the spin polarization of a charge current.     

Electrical generation of pure spin current with oscillating spin-orbit interaction

We propose an electrical scheme for the generation of a pure spin current without a charge current in a two-terminal device, which consists of a scattering region of a two-dimensional electron gas (2DEG) with Rashba (R) and/or Dresselhaus (S) spin-orbit interaction (SOI) and two normal leads. The SOI is modulated by a time-dependent gate voltage to pump a spin current. Based on a tight-binding model and the Keldysh Green’s function technique, we obtain the analytical expression of the spin current. It is shown that a pure spin current can be pumped out, and its magnitude could be modulated by device parameters such as the oscillating frequency of the SOI, as well as the SOI strength. Moreover, the spin polarisation direction of the spin current could also be tuned by the strength ratio between RSOI and DSOI. Our proposal provides not only a fully electrical means to generate a pure spin current but also a way to control the spin polarisation direction of the generated spin current.     

基于钴和坡莫合金纳磁体的全自旋逻辑器件开关特性研究

基于纳磁体动力学和自旋传输机理, 建立了全自旋逻辑(ASL)器件的自旋传输-磁动力学模型. 基于该模型分别研究了钴纳磁体构成的全自旋逻辑(CoASL)器件和坡莫合金纳磁体构成的全自旋逻辑(PyASL)器件在不同沟道长度和电源电压下的开关特性. 结果显示PyASL器件在开关延迟时间和功耗上要小于CoASL器件, 且能可靠工作的最大沟道长度要大于CoASL器件. 另外, 两种ASL器件的开关延迟时间可通过减小沟道长度或增加电源电压来减小; 而功耗可通过减小沟道长度或电源电压来减小. 同时, 减小沟道长度能有效抑制热噪声对开关延迟时间和功耗的影响, 但增大电源电压只能抑制热噪声对开关延迟时间的影响. 上述研究结果将为优化ASL器件磁性材料和器件结构提供重要的参数选择依据.     

Temperature-controllable spin-polarized current and spin polarization in a Rashba three-terminal double-quantum-dot device

We propose a Rashba three-terminal double-quantum-dot device to generate a spin-polarized current and manipulate the electron spin in each quantum dot by utilizing the temperature gradient instead of the electric bias voltage. This device possesses a nonresonant tunneling channel and two resonant tunneling channels. The Keldysh nonequilibrium Green's function techniques are employed to determinate the spin-polarized current flowing from the electrodes and the spin accumulation in each quantum dot. We find that their signs and magnitudes are well controllable by the gate voltage or the temperature gradient. This result is attributed to the change in the slope of the transmission probability at the Fermi levels in the low-temperature region. Importantly, an obviously pure spin current can be injected into or extracted from one of the three electrodes by properly choosing the temperature gradient and the gate voltages. Therefore, the device can be used as an ideal thermal generator to produce a pure spin current and manipulate the electron spin in the quantum dot.     

Pure spin current generation in monolayer graphene by quantum pumping

We study a method to generate pure spin current in monolayer graphene over a wide range of Fermi energy by adiabatic quantum pumping. The device consists of three gate electrodes and two ferromagnetic strips, which induce a spin-splitting in the graphene through the proximity effect. A pure spin current is generated by applying two periodic oscillating gate voltages. We find that the pumped pure spin current is a sensitive oscillatory function of the Fermi energy. Large spin currents can be found at Fermi energies where there are Fabry-Perot resonances in the barriers. Furthermore, we analyze the effects of the parameters of the system on the pumped currents. Our predicted pumped spin current can be of the order of 100 nA which is measurable using the current technology. The proposed method is useful in the realization of graphene spintronic devices.     

Spin current and its heat effect in a multichannel quantum wire with Rashba spinben orbit coupling

Using the perturbation method, we theoretically study the spin current and its heat effect in a multichannel quantum wire with Rashba spin—orbit coupling. The heat generated by the spin current is calculated. With the increase of the width of the quantum wire, the spin current and the heat generated both exhibit period oscillations with equal amplitudes. When the quantum-channel number is doubled, the oscillation periods of the spin current and of the heat generated both decrease by a factor of 2. For the spin current j_s,xy, the amplitude increases with the decrease of the quantum channel; while the amplitude of the spin current j_s,yx remains the same. Therefore we conclude that the effect of the quantum-channel number on the spin current j_s,xy is greater than that on the spin current j_s,yx. The strength of the Rashba spin—orbit coupling is tunable by the gate voltage, and the gate voltage can be varied experimentally, which implies a new method of detecting the spin current. In addition, we can control the amplitude and the oscillation period of the spin current by controlling the number of the quantum channels. All these characteristics of the spin current will be very important for detecting and controlling the spin current, and especially for designing new spintronic devices in the future.     

双磁性中心内嵌富勒烯Y_2C_2@C_(82)-C_2(1)中的超快自旋动力学行为

自旋翻转和自旋转移是实现基于内嵌富勒体系自旋逻辑功能器件设计的先决条件.本文以双磁性中心内嵌富勒烯Y_2C_2@C8_2-C_2(1)体系为例,采用第一性原理计算方法,结合Λ进程理论模型和自编的遗传算法程序,在该内嵌富勒烯体系中分别实现了亚皮秒时间尺度内的自旋翻转和自旋转移过程.计算结果表明,优化后的内嵌Y_2C_2团簇结构和实验得到的各项数据基本吻合,并且会对外部的C8_2-C_2(1)笼结构产生一定的排斥力,但由于富勒烯笼状结构具有很强的稳定性,所以整个体系仍然保持碳笼结构的完整性.通过对自旋密度分布与激光脉冲作用下自旋期望值演化的具体分析,经由Λ进程的自旋翻转是基于两个Y元素的整体自旋翻转;自旋转移则源自两个磁性中心以及碳笼之间在激光脉冲作用下的自旋密度重新分布.本文结果揭示了Y_2C_2@C8_2-C_2(1)体系中的超快自旋动力学机理,可望为基于实际内嵌富勒烯分子的自旋逻辑功能器件设计提供理论依据.     

Spin and valley half metal induced by staggered potential and magnetization in silicene

We investigate the electron transport in silicene with both staggered electric potential and magnetization; the latter comes from the magnetic proximity effect by depositing silicene on a magnetic insulator. It is shown that the silicene could be a spin and valley half metal under appropriate parameters when the spin–orbit interaction is considered; further, the filtered spin and valley could be controlled by modulating the staggered potential or magnetization. It is also found that in the spin-valve structure of silicene, not only can the antiparallel magnetization configuration significantly reduce the valve-structure conductance, but the reversing staggered electric potential can cause a high-performance magnetoresistance due to the spin and valley blocking effects. Our findings show that the silicene might be an ideal basis for the spin and valley filter analyzer devices.     

Nonequilibrium spin-polarized transport through two parallel-coupled quantum dots

Spin-polarized transport through an Aharonov–Bohm ring containing two quantum dots (QDs) in each of its arms is studied by using the nonequilibrium Green’s function technique. We take both the Rashba spin-orbit interaction that exists in one of the QDs, and an inhomogeneous magnetic flux penetrating through the ring, into consideration. It is found that a 100% spin-polarized current can be driven out of the QDs ring, and both the spin directions and the magnitude of the outgoing current can be controlled. The origin of the pure spin-up or spin-down current is interpreted in terms of the spin accumulation in the QDs. This device is realizable by presently available technologies and can be used as a spin filter.     

Interfacial spin Hall current in a Josephson junction with Rashba spin—orbit coupling

We theoretically investigate the spin transport properties of the Cooper pairs in a conventional Josephson junction with Rashba spin-orbit coupling considered in one of the superconducting leads.It is found that an angle-resolved spin supercurrent flows through the junction and a nonzero interfacial spin Hall current driven by the superconducting phase difference also appears at the interface.The physical origin of this is that the Rashba spin-orbit coupling can induce a triplet order parameter in the s-wave superconductor.The interfacial spin Hall current dependences on the system parameters are also discussed.     

Pure spin currents generation in magnetic tunnel junctions by means of adiabatic quantum pumping

We study the spin polarized currents generation in a magnetic (ferromagnetic/ferromagnetic) tunnel junction by means of adiabatic quantum pumping. Using a scattering matrix approach, it is shown that a pure spin current can be pumped from one ferromagnetic lead into the adjacent one by adiabatic modulation of the magnetization and the height of the barrier at the interface in absence of external bias voltage. We numerically study the characteristic features of the pure spin current and discuss its behavior for realistic values of the parameters. We show that the generated pure spin current is robust with respect to the variation of the magnetization strength, a very important feature for a realistic device, and that the proposed device can operate close to the optimal pumping regime. An experimental realization of a pure spin current injector is also discussed.     

Controllable Spin-Polarized Transport in a Three-Terminal Model

By means of the Keldysh Green's function method, we investigate the spin-polarized electron transport in a three-terminal device, which is composed of three normal metal leads and two serially-coupled quantum dots (QDs). The Rashba spin-orbit interaction (RSOI) is also considered in one of the QDs. We show that the spin-polarized charge current with arbitrary spin polarization can be obtained because of the quantum spin interference effect arising from the Rashba spin precession phase, and it can be modulated by the system parameters such as the applied external voltages, the RSOI strength, the QD levels, as well as the dot-lead coupling strengths. Moreover, a fully spin-polarized current or a pure spin current without any accompanying charge current can also be controlled to flow in the system. Our findings indicate that the proposed model can serve as an all-electrical spin device in spintronics field.