Surface morphology development during ion sputtering: roughening or smoothing?

We report on STM studies of ion-sputtered surfaces, applying sputtering conditions which were shown to produce a relatively smooth surface. The height correlation function was calculated for the nickel layer in both the as-received and sputtered conditions. The large-scale roughness of the as-received specimen was reduced by ion sputtering according to expectations derived from Auger depth profiling. On the other hand, the small-scale roughness was increased due to sputtering. Self-affine scaling regions are identified, and the exponents are compared to theoretical and numerical results.     

基于椭圆偏振光谱法的玻璃表面离子束改性分析

采用阳极层线性离子源解离氮气对玻璃表面进行刻蚀处理,研究表面改性后玻璃表面的变化,并分析离化电压对表面粗糙度、折射率以及光学厚度的影响。在此基础上,基于椭圆偏振光谱仪,通过对比不同表面状态下的Δ光谱,讨论固定波长变化入射角的Δ光谱曲线特征与表面折射率、布儒斯特角、粗糙度以及光学厚度之间的关系。结果表明,刻蚀后玻璃的布儒斯特角附近的Δ光谱曲线形状发生变化,突变向高角度偏移,曲线下降斜率增大。通过建模并拟合分析发现,氮离子束轰击使玻璃表面产生光密介质层,表面折射率增大,布儒斯特角增大,粗糙度降低,且随离化电压升高,折射率不变,而光密介质层厚度增加。由原子力显微镜分析表面形貌,验证了离子束对玻璃表面的平整化作用。X射线光电子能谱结果表明离子束使玻璃表面发生选择性溅射,推断光密介质层的产生来自于离子束对玻璃表面的夯实作用。此外,推导并验证了Δ光谱曲线的特征与材料表面状态之间的普适关系,提出了基于椭圆偏振光谱仪的材料表面评估方法,即Δ曲线的突变发生角度增大说明折射率与布儒斯特角的增大;下降斜率增大说明表面粗糙度减小;曲线两端尖角增大说明光学厚度增大。反之亦然。     

Temperature,roughness and depth resolution in ion sputter profiles

The depth resolutions of evaporated silver layers on polished polycrystalline copper substrates are studied at various temperatures during argon ion sputtemg with AES. A detailed analysis of the profile shape at the interface reveals the nature of contributions to the terms governing interface resolution. The profiles are all accurately described by an error function leading edge followed by an exponential trailing edge. The characteristic of the trailing edge is governed by the development of roughness which depends on the depth, z, sputtered as z^0.875. The roughness is reduced at elevated temperatures by the action of surface diffusion such that the maximum reduction occurs at the highest temperature and the lowest sputtering rate. The characteristic of the leading edge is composed of three terms added in quadrature, (i) defect-enhanced diffusion of copper into the silver film, (ii) roughness as above, and (iii) a constant term due to film nucleation. In the present samples the increased interdiffusion at elevated temperatures and low sputtering rates largely offsets the improvements in topography so that, overall, the depth resolution appears to be a very weak function of temperature. However, in other systems where interdiffusion is small, the resolution could be greatly enhanced.     

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依据钨材料表面溅射的实验现象,建立钨材料表面粗糙模型,模拟了高能H+、He+粒子辐照下的钨材料表面的溅射行为过程,并与基于离子输运的双群模型计算得到的结果作了比较。结果表明,随着钨材料表面粗糙程度的增加,溅射率降低;对一定的粗糙表面,相同能量的不同入射粒子,质量越大粒子溅射率越高,这些结果为分析聚变装置中心等离子体杂质水平和评价偏滤器寿命等提供了一定的理论支撑。     

表面粗糙度对面向等离子体钨材料溅射的影响

依据钨材料表面溅射的实验现象,建立钨材料表面粗糙模型,模拟了高能H⁺、He⁺粒子辐照下的钨材料表面的溅射行为过程,并与基于离子输运的双群模型计算得到的结果作了比较。结果表明,随着钨材料表面粗糙程度的增加,溅射率降低;对一定的粗糙表面,相同能量的不同入射粒子,质量越大粒子溅射率越高,这些结果为分析聚变装置中心等离子体杂质水平和评价偏滤器寿命等提供了一定的理论支撑。     

沉积工艺对二氧化锆薄膜生长特性影响的研究

利用反应离子束溅射、反应磁控溅射和电子束蒸发在K9基底上沉积ZrO2薄膜，并用原子力显微镜对薄膜表面形貌进行测量。通过数值相关运算，对不同工艺条件下薄膜生长界面进行定量描述，得到了薄膜表面的粗糙度指数、横向相关长度、标准偏差粗糙度等参量。由于沉积条件的不同，薄膜生长具有不同的动力学过程。在反应离子束溅射和反应磁控溅射沉积薄膜过程中，薄膜生长动力学行为均可用Kuramoto-Sivashinsky方程来描述，电子束蒸发制备薄膜的过程可以用Mullins扩散模型来描述，并发现在沉积薄膜过程中基底温度和沉积过程的稳定性对薄膜表面特征影响很大。     

High sputtering yields of organic compounds by large gas cluster ions

We measured the sputtering yield, surface roughness and surface damage of thin leucine films bombarded with Ar cluster ions and examined the usefulness of large gas cluster ions for the depth profiling of organic compounds. Ar cluster ion beams with a mean size of 2000 atoms/cluster and energies from 5 to 30 keV were used. Sputtering yields increased linearly with incident ion energy and were extremely high compared to inorganic materials. Surface damage was investigated by measuring positive secondary ions emitted from the leucine film before and after cluster ion irradiation. After irradiation the leucine surface became smoother. The yield ratio of protonated leucine ions to other fragment ions kept constant before and after Ar cluster ion irradiation. These results indicate that large gas cluster ions are useful for depth profiling of organic compounds.     

Simulation of sputtering from ion-beam-roughened carbon surfaces

Effects of ion-induced surface roughness on sputtering of amorphous carbon under ion bombardment are studied by means of binary-collision computer simulation in a wide range of incidence angles. Most simulations refer to 1–10?keV Ar ion bombardment, and sinusoidal ripple morphology is assumed. It is shown that surface roughness is a key factor to achieve quantitative agreement with experiment. The simulation results are compared with the analytical estimates of the yield from sine-shaped and ridged surfaces based on continuum models of ion sputtering. Some deviations between the results are discussed.     

Surface defects,stress evolution,and laser damage enhancement mechanism of fused silica under oxygen-enriched condition

Oxygen ions (O⁺) were implanted into fused silica at a fixed fluence of 1×10¹⁷ ions/cm² with different ion energies ranging from 10 keV to 60 keV. The surface roughness, optical properties, mechanical properties and laser damage performance of fused silica were investigated to understand the effect of oxygen ion implantation on laser damage resistance of fused silica. The ion implantation accompanied with sputtering effect can passivate the sub-/surface defects to reduce the surface roughness and improve the surface quality slightly. The implanted oxygen ions can combine with the structural defects (ODCs and E' centers) to reduce the defect densities and compensate the loss of oxygen in fused silica surface under laser irradiation. Furthermore, oxygen ion implantation can reduce the Si-O-Si bond angle and densify the surface structure, thus introducing compressive stress in the surface to strengthen the surface of fused silica. Therefore, the laser induced damage threshold of fused silica increases and the damage growth coefficient decreases when ion energy up to 30 keV. However, at higher ion energy, the sputtering effect is weakened and implantation becomes dominant, which leads to the surface roughness increase slightly. In addition, excessive energy aggravates the breaking of Si-O bonds. At the same time, the density of structural defects increases and the compressive stress decreases. These will degrade the laser laser-damage resistance of fused silica. The results indicate that oxygen ion implantation with appropriate ion energy is helpful to improve the damage resistance capability of fused silica components.     

直流磁控溅射制备AlN薄膜的结构和表面粗糙度

采用直流磁控反应溅射法,在Si(111)基底上成功制备了多晶六方相AlN薄膜.研究了溅射过程中溅射气压对薄膜结构和表面粗糙度的影响.结果表明:当溅射气压低于0.6 Pa时,薄膜为非晶态,在傅里叶变换红外光谱中,没有明显的吸收峰;当溅射气压不低于0.6 Pa时,薄膜的X射线衍射图中均出现了六方相的AlN(100)、(11...     

Analysis of C60 and Cs sputtering ions for depth profiling gold/silicon and GaAs multilayer samples by time of flight secondary ion mass spectrometry

Time of flight secondary ion mass spectrometry (ToF-SIMS) depth profiles of several inorganic layered samples using Cs⁺ and C₆₀⁺ primary sputtering ions of different energies are compared to evaluate sputter yield and depth resolution. A gold/silicon model system is employed to study interfaces between metals and semiconductors, and multilayers of AlGaAs, Al, and InAs in GaAs are analyzed to explore the ability of C₆₀⁺ to analyze semiconductor interfaces in GaAs. Roughness measurements are reported to differentiate between different factors affecting depth resolution. The best depth resolution from all samples analyzed is achieved using 1 keV Cs⁺. However, C₆₀⁺ sputtering has advantages for analyzing conductor/insulator interfaces because of its high sputter yield, and for analyzing deeper heterolayers in GaAs due to lower sputter-induced roughness.     

A study of fused silica micro/nano patterning by focused-ion-beam

A dual-beam scanning electron microscopy (SEM)/focused-ion-beam (FIB) system was used to pattern fused silica substrates coated with a 15 nm thin Cr layer. The dimensions of fabricated features together with their surface morphology and profiles were investigated by SEM and atomic force microscopy (AFM). The study demonstrated that with the increase of the ion beam fluence the sputtering rate of the fused silica decreased non-linearly. Also, it was found that initially the sputtering rate increased with the increase of the beam current, after reaching a maximum value, it started decreasing when further beam current increment was performed. Compared with unprocessed areas, the surface finish of the features fabricated by FIB exhibited a significant improvement, and the ion fluence influence on the surface roughness of trenches with low aspect ratios could be considered as negligible. Using a fine beam probe, nano-gratings in the form of grooves with a width down to 54 nm and an aspect ratio higher than three were fabricated. The study showed that FIB machining could be an alternative technology to e-beam lithography for producing fused silica templates for UV nanoimprinting.     

Ion beam induced formation and interrogation of Au nanoclusters

Low-energy ion bombardment of a Au thin film by 0.5 keV Ar+ forms self-organized nanoclusters that display quantum size effects. The reduction of Au coverage with sputtering time is quantified with x-ray photoemission spectroscopy, and a decrease of both the rms roughness and correlation length is measured by STM. Neutralization of scattered 3 keV Na+ and K+ alkali-metal ions is used to probe the electronic states of the sputter-induced nanoclusters. The neutral fractions gradually increase as the cluster dimensions decrease, indicating that the electronic structure is similar to that of clusters grown by deposition.     

Focused ion beam based sputtering yield measurements on ZnO and Mo thin films

In order to facilitate the lateral structuring of solar cell multilayer structures, the ion beam sputtering behaviour of Mo and ZnO thin films deposited onto soda-lime glass and single crystalline Si substrates was studied. Prior to ion beam processing the layers were analyzed by Energy Dispersive X-Ray Spectrometry (EDS), X-Ray Diffractometry (XRD) and Rutherford Backscattering (RBS). In order to characterize the ion beam sputtering of the investigated layers, 2×2 μm² fractions of the thin films were removed by a scanned 30 keV focused Ga⁺ ion beam (FIB) in a dual beam system. SEM images taken during the milling process allowed continuous monitoring of the process without breaking the vacuum. The depth of the groove after removal of the layers was measured by Atomic Force Microscopy (AFM) and was plotted as a function of the ion dose. The sputtering depth has a dependence on the ion dose that is close to linear. The deviation from linearity is produced by heating effects at high beam currents. Sputtering yield values calculated from the experiments and simulations showed good agreement in the case of Mo but deviation was found in the case of ZnO.     

电子束、离子辅助和离子束溅射三种工艺对光学薄膜性能的影响

 运用电子束、离子辅助和离子束溅射三种镀膜工艺分别制备光学薄膜，包括单层氧化物薄膜和增透膜，然后采取一系列测试手段，如Zygo轮廓仪、原子力显微镜、表面热透镜技术和X射线衍射等技术，来分析和研究不同的工艺对这些薄膜性能的不同影响，以判断合理的沉积工艺。     

Systematic investigation of the reactive ion beam sputter deposition process of SiO<Subscript>2</Subscript>

Ion beam sputter deposition (IBSD) is an established physical vapour deposition technique that offers the opportunity to tailor the properties of film-forming particles and, consequently, film properties. This is because of two reasons: (i) ion generation and acceleration (ion source), sputtering (target) and film deposition (substrate) are locally separated. (ii) The angular and energy distribution of sputtered target atoms and scattered primary particles depend on ion incidence angle, ion energy, and ion species. Ion beam sputtering of a Si target in a reactive oxygen atmosphere was used to grow SiO₂ films on silicon substrates. The sputtering geometry, ion energy and ion species were varied systematically and their influence on film properties was investigated. The SiO₂ films are amorphous. The growth rate increases with increasing ion energy and ion incidence angle. Thickness, index of refraction, stoichiometry, mass density and surface roughness show a strong correlation with the sputtering geometry. A considerable amount of primary inert gas particles is found in the deposited films. The primary ion species also has an impact on the film properties, whereas the influence of the ion energy is rather small.     

Sputtering of SiC with low energy He and Ar ions under grazing incidence

The effect of low energy sputtering under grazing incidence upon the surface composition of SiC was investigated by Auger electron spectroscopy. The energy of the sputtering projectiles (He, Ar) varied from 200 to 1500?eV. Peak shifts to the higher energies with increasing argon ion energy were observed for all silicon and carbon Auger transitions. These shifts were explained by enhanced damage of the surface region within the sampling depth of the Auger electrons. The insensitivity of the Auger peak position to the energy of helium ions indicates that the damage state in the surface region does not change with the increasing energy of helium ions. An increase of the carbon concentration with the decrease of the argon energy was observed. The experiments were accompanied by dynamic Monte Carlo simulations by the TRIDYN code.     

On the influence of reactive gases on sputtering and secondary ion emission

As a continuation of earlier sputtering yield measurements in an ion microprobe, the influence of oxygen and nitrogen on sputtering yield, ionisation efficiency and depth resolutions has been studied. For inert gas bombardment the yield of Ti and V falls sharply at a certain oxygen exposure. While this decrease in yield can be correlated with an increase in surface binding energy in the case of titanium, cone formation causes the yield to drop for oxygen exposed vanadium. In contrast, during nitrogen bombardment the only effect of oxygen exposure is a drastic increase of the ionisation efficiency; the sputtering yield or the depth resolution Δz/z is hardly influenced by oxygen coverage. As was observed earlier in the case of Cu?Ni layers, Δz is essentially constant for erosion depthsz?800 Å, thus yielding better resolution at large depths than is to beexpected from a sequential layer removal model. The extent of the transition zone Δz, is determined by surface topography and thus depends on the target composition as well as its structure.     

Characterization of ion beam sputter deposited W and Si films and W/Si interfaces by grazing incidence X-ray reflectivity, atomic force microscopy and spectroscopic ellipsometry

An ion beam sputtering system, which uses a commercial ECR microwave based plasma ion source, has been designed and fabricated in-house for deposition of soft X-ray multilayer mirrors. To begin with, in the ion beam sputtering system W, Si thin films, W/Si bi-layer and W/Si/W tri-layer samples have been deposited on c-Si substrates as precursors to W/Si multilayer stack. The samples have been characterized by grazing incidence X-ray reflectivity (GIXR), atomic force microscopy (AFM) and spectroscopic ellipsometry (SE) techniques. By analyzing the results, density, thickness, surface roughness of the single layer samples and interface width of the bi-layer and tri-layer samples have been estimated.     

溅射功率对直流磁控溅射Ti膜结构的影响

 采用直流磁控溅射方法制备了纯Ti膜，研究了不同功率下Ti膜的沉积速率、表面形貌及晶型结构，并对其应力进行了研究。研究表明：薄膜的沉积速率随溅射功率的增加而增加，当溅射功率为20 W时，原子力显微镜(AFM)图像显示Ti膜光洁、致密，均方根粗糙度最小可达0.9 nm。X射线衍射(XRD)分析表明薄膜的晶体结构为六方晶型，Ti膜应力先随溅射功率增大而增大，在60 W时达到最大值（为945.1 MPa），之后随溅射功率的增大有所减小。