多晶硅太阳电池激光掺杂选择性发射极

研究了多晶硅片扩散工艺与激光掺杂工艺的匹配性.采用波长532nm的纳秒脉冲激光器对扩散后未去磷硅玻璃的多晶硅片表面进行激光扫描掺杂,激光扫描掺杂后硅片方块电阻降低为扩散后硅片方阻的50%左右,而且随着激光功率的增加,扩散到硅片表面的磷原子浓度增大,硅片方阻下降更明显.测试了激光掺杂后多晶硅太阳能电池的外量子效率,其外量子效率在340~480nm波段范围与常规多晶硅太阳能电池相比提高18%~5%.研究了激光掺杂后多晶硅电池的光电转换特性,分析了较高激光功率掺杂时多晶硅电池的失效特性,结果表明:优化工艺后多晶硅太阳电池平均光电转换效率达到17.11%,比普通工艺多晶硅太阳电池提高0.34%,最高转换效率达到17.47%.激光掺杂选择性发射极工艺流程简单,电池效率提升明显,易于实现产业化.     

n-ZnO:Al/i-ZnO/n-CdS/p-Cu2ZnSnS4太阳能电池光伏特性的分析

具有高光吸收系数的半导体Cu₂ZnSnS₄ (CZTS)薄膜是一种新型太阳能电池材料. 本文对n-ZnO:Al/i-ZnO/n-CdS/p-CZTS结构的CZTS薄膜太阳能电池进行分析, 讨论CZTS薄膜的掺杂浓度、厚度、缺陷态和CdS薄膜的掺杂浓度、 厚度对太阳能电池转换效率的影响以及太阳能电池的温度特性. 分析表明, CZTS薄膜作为太阳能电池的主要光吸收层, CZTS薄膜的掺杂浓度和厚度的取值对太阳能电池的转换效率有显著影响, CZTS薄膜结构缺陷态的存在会导致太阳能电池性能的下降. CdS缓冲层的掺杂浓度、厚度对太阳能电池光伏特性的影响较小. 经结构参数优化得到的n-ZnO:Al/i-ZnO/n-CdS/p-CZTS薄膜太阳能电池的最佳光 伏特性为开路电压1.127 V、短路电流密度27.39 mA/cm²、填充因子87.5%、 转换效率27.02%,转换效率温度系数为-0.14%/K.     

溶胶-凝胶法制备GaInP/GaAs/Ge三结太阳能电池梯度折射率减反膜

为了减少太阳能电池表面反射,提高多结太阳能电池效率,针对GaInP/GaAs/Ge三结太阳能电池和AM0光谱,设计了折射率梯度排列的四层减反膜系结构.利用溶胶-凝胶技术,通过对材料折射率的定向调节,制备了折射率梯度排列的TiO_2/ZrO_2/酸性SiO_2/碱性SiO_2四层减反膜.实验结果表明,镀膜后的三结太阳能电池在300~1 700 nm波长范围内的加权平均反射率由原先的28.58%降低至4.86%,最高反射率由46.35%降低至15.45%.     

金纳米四面体增强有机太阳电池光吸收及光伏性能研究

为增强有机太阳能电池的光利用率,提高能量转换效率,本文合成了金四面体形状的纳米粒子,并用聚苯乙烯磺酸钠(PSS)包裹形成了核壳结构的金纳米四面体(Au@PSS tetrahedra NPs).将其掺杂到有机太阳能电池空穴提取层与活性层的界面处,利用表面等离子体共振效应来增强活性层对光的吸收,从而提高有机太阳能电池的能量转换效率.研究了掺杂浓度和PSS包裹厚度对电池性能的影响.结果表明:掺杂浓度为6%时,器件性能最佳,能量转换效率达到3.08%; PSS壳层厚度优化为2.5 nm时,转换效率达到3.65%,较标准电池提升了22.9%.电池性能的改善主要源于金四面体纳米粒子的共振吸收峰位于给体材料吸收谱范围内,纳米粒子的共振促进了给体的吸收,同时PSS壳层的引入促进了激子的解离和电荷的转移,上述因素的改善提升了电池的短路电流、填充因子和转换效率.     

ECRCVD技术淀积太阳电池的减反膜

本文报道了用电子回旋共振化学气相淀积(ECRCVD)技术实现了低温(50℃)淀积SiON/SiN膜作硅太阳电池减反射膜的实验研究.探讨了影响薄膜性能的主要工艺参数,设计了具有较佳抗反效果的双层减反膜,并对膜层的反射率和太阳电池参数进行了测定.结果表明:该减反膜具有良好的减反效果,能实现较宽波段范围内的均匀增透,使太阳电池短路电流密度提高了42%,电池转换效率提高了45%.     

基于金纳米棒@二氧化硅表面等离子体共振增强的有机太阳能电池

把包裹SiO₂的金纳米棒（Au NRs@SiO₂）掺杂到有机太阳能电池的活性层中,利用表面等离子体共振效应来增强活性层对光的吸收,从而提高有机太阳能电池的能量转换效率。研究了不同掺杂浓度和不同包裹厚度对电池性能的影响。结果表明,掺杂浓度为1.5%时,器件性能最佳,能量转换效率达到4.02%;SiO₂壳层厚度为3 nm时,转换效率达到4.38%,较标准电池提升了29.2%。     

GaAs纳米线阵列太阳能电池的设计与优化

为了得到纳米线阵列太阳能电池的最优转换效率,通过仿真计算对GaAs轴向pin结纳米线阵列进行了结构优化.首先利用三维有限时域差分法分析了GaAs纳米线阵列的光吸收特性,并对其直径、密度等结构参量进行优化,优化后的GaAs纳米线阵列的光吸收率可达87.4%.在此基础上,利用Sentaurus软件包中的电学仿真模块分析了电池的电学性能,并根据光生载流子在纳米线中的分布,对轴向pin结结构进行优化,最终优化过的太阳能电池功率转换效率可达到17.6%.分析结果表明,通过钝化处理以降低GaAs纳米线的表面复合速率,可显著提升电池的功率转换效率,而通过减小纳米线顶端高掺杂区域的体积,可减少载流子复合损耗,从而提高电池效率.该研究可为制作高性能的纳米线太阳能电池提供参考.     

三光子量子剪裁系统后置提高太阳能电池效率

稀土离子材料量子剪裁的研究能有效的提高基质发光材料的发光效率,近年来量子剪裁也不断的在太阳能电池领域取得比较重要的位置。利用稀土离子掺杂材料能有效的获得三光子量子剪裁能拓展太阳光谱的响应范围,同时在太阳能电池中产生多个电子空穴对,电子空穴对多元化有效的减少能量损失以及太阳光谱利用范围的拓宽有效提高了太阳能电池的效率。根据量子剪裁的理论设置相应的具有下转换系统太阳能电池的物理模型及等效电路图,根据太阳能电池效率计算的细致平衡原理求得其最大的极限效率。把稀土离子三光子量子剪裁应用于实际太阳能电池的应用价值进行粗略的估算,三光子量子剪裁系统后置太阳能电池时可以得到最大效率为58.58%,与Trupke双光子下转换模型相比效率有很大的提高。三光子系统后置太阳能电池理论模型的设置比较好的证明了稀土材料三光子量子剪裁对于推进太阳能电池课题的发展具有重要意义。     

二甲基亚砜添加剂对聚合物太阳能电池性能的影响（英文）

研究了二甲基亚砜(DMSO)掺杂浓度对基于聚(3-己基噻吩)(P3HT)和(6,6)-苯基碳60丁酸甲酯(PCBM)为有源层的聚合物太阳能电池性能影响。结果表明,掺杂DMSO可以提高聚合物太阳能电池短路电流密度和填充因子。DMSO掺杂质量比为3%时,电池短路电流密度提高到7.88mA·cm-2,填充因子为55.5%。能量转换效率达到2.54%,相比没有掺杂DMSO的电池,能量转换效率提高了17%。傅里叶变换红外光谱被用于鉴定和分析掺杂DMSO对材料P3HT∶PCBM化学性质的影响。傅里叶变换红外光谱表明,掺杂后P3HT和PCBM的化学性质都没有改变。为分析掺杂DMSO改善器件能量转换效率的原因,通过紫外-可见光谱和电流密度-电压特性曲线分别表征器件的光吸收能力以及电致发光器件的载流子迁移率。与P3HT∶PCBM薄膜相比,P3HT∶PCBM∶DMSO薄膜在可见光范围内的吸收峰有明显红移且吸收强度增强。可见光吸收的改善是实现短路电流密度提高的有力保障。太阳能电池性能的增强是因为DMSO的掺杂提高了P3HT∶PCBM的载流子迁移率和吸收光谱宽度。     

二甲基亚砜添加剂对聚合物太阳能电池性能的影响

研究了二甲基亚砜(DMSO)掺杂浓度对基于聚(3-己基噻吩)(P3HT)和(6,6)-苯基碳60丁酸甲酯(PCBM)为有源层的聚合物太阳能电池性能影响。结果表明,掺杂DMSO可以提高聚合物太阳能电池短路电流密度和填充因子。DMSO掺杂质量比为3%时,电池短路电流密度提高到7.88 mA·cm-2,填充因子为55.5%。能量转换效率达到2.54％,相比没有掺杂DMSO的电池,能量转换效率提高了17%。傅里叶变换红外光谱被用于鉴定和分析掺杂DMSO对材料P3HT∶PCBM化学性质的影响。傅里叶变换红外光谱表明,掺杂后P3HT和PCBM的化学性质都没有改变。为分析掺杂DMSO改善器件能量转换效率的原因,通过紫外-可见光谱和电流密度-电压特性曲线分别表征器件的光吸收能力以及电致发光器件的载流子迁移率。与P3HT∶PCBM薄膜相比,P3HT∶PCBM∶DMSO薄膜在可见光范围内的吸收峰有明显红移且吸收强度增强。可见光吸收的改善是实现短路电流密度提高的有力保障。太阳能电池性能的增强是因为DMSO的掺杂提高了P3HT∶PCBM的载流子迁移率和吸收光谱宽度。     

Dependence of the solar cell performance on nanocarbon/Si heterojunctions

Solar cells that combine single-crystalline silicon(Si) with graphene(G) have been widely researched in order to develop next-generation photovoltaic devices. However, the power conversion efficiency(PCE) of G/Si solar cell without chemical doping is commonly low due to the relatively high resistance of graphene. In this work, through combining graphene with carbon nanotube(CNT) networks, we fabricated three kinds of hybrid nanocarbon film/Si heterojunction solar cells in order to increase the PCE of the graphene based Si solar cell. We investigated the characteristics of different nanocarbon film/Si solar cells and found that their performance depends on the heterojunctions. Specifically, a doping-free G-CNT/Si solar cell demonstrated a high PCE of 7.9%, which is nearly equal to the combined value of two individuals(G/Si and CNT/Si). This high efficiency is attributed to the synergistic effect of graphene and CNTs, and can be further increased to 9.1% after applying a PMMA antireflection coating. This study provides a potential way to further improve the Si based heterojunction solar cells.     

彩色多晶硅太阳电池性能研究

通过调节单层SiN_x:H减反射膜的厚度制备各种颜色的多晶硅太阳电池. 测试了太阳电池片和组件的光学和电学性能, 用PC1D软件对其性能进行模拟. 通过分析得到以下结论: 1)当减反射膜的厚度小于50 nm时, 影响彩色组件和电池片功率变化的主要因素是开路电压(V_oc)和短路电流(I_sc), 当减反射膜的膜厚度大于50 nm时, 随着减反射膜钝化作用的稳定, 影响彩色组件和电池片功率变化的主要因素是I_sc; 2)大多数彩色电池片的效率比传统蓝色电池片的效率低, 但是在封装之后, 彩色电池组件可以有不同程度的增益, 主要原因是减反射膜与乙烯-醋酸乙烯共聚物和玻璃匹配性较好. 关键词： 彩色太阳电池 氮化硅 钝化 光学匹配     

Surface profile optimization of antireflection gratings for solar cells

The solar cell efficiency can be improved by antireflection gratings. In this paper, the antireflection gratings with different symmetrical surface profiles are investigated by numerical simulations based on the Rigorous Coupled-Wave Analysis. Simulated results show that the antireflection performance of sharp profile such as quadratic profile has a significant improvement compared with triangular and parabolic profiles, while the top cutoff in the grating tip will severely influence the antireflection performance. Meanwhile, proper length of flat region between grating features in the nonclose-packed triangular antireflection grating can have better antireflection performance than the close-packed counterpart for the same grating period and height. Such antireflection gratings with different surface profiles may offer attractive solutions to current commercial silicon solar cell, as well as organic and other semiconductor material based solar cells.     

Influence of deposition conditions on the antireflection properties of diamond-like carbon films for Si-based solar cells

The influence of deposition conditions on the antireflection properties of diamond-like carbon films for Si-based solar cells is studied theoretically. The values of the short-circuit current density for Si solar cells covered by diamond-like carbon films deposited at different concentrations of nitrogen in the gas mixture are calculated and compared with the associated values for uncovered solar cells. It is shown that the short-circuit current density increases with nitrogen concentration in the gas mixture because of a lower light absorption by the growing film. Optimum thicknesses of the diamond-like carbon films are calculated that provides a maximal increase in the output short-circuit current density of Si-based solar cells under both AM1.5 and AM0 conditions. Published in Russian in Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 76, No. 5, pp. 122–126. The article was translated by the authors.     

硅薄膜太阳电池表面纳米线阵列光学设计

陷光结构的优化是增加硅薄膜太阳电池光吸收进而提高其效率的关键技术之一. 以硅纳米线阵列为代表的光子晶体微纳陷光结构具有突破传统陷光结构Yablonovith极限的巨大潜力. 通常硅纳米线阵列可以用作太阳电池的增透减反层、轴向p-n结、径向p-n结. 针对以上三种应用, 本文运用有限时域差分(FDTD)法系统研究了硅纳米线阵列在 300-1100 nm 波段的光学特性. 结果表明, 当硅纳米线作为太阳电池的减反层时, 周期P=300 nm, 高度H=1.5 μm, 填充率(FR)为0.282条件下时, 反射率最低为7.9%. 当硅纳米线作为轴向p-n结电池时, P=500 nm, H=1.5 μm, FR=0.55条件下纳米线阵列的吸收效率高达22.3%. 硅纳米线作为径向p-n结电池时, 其光吸收主要依靠纳米线, 硅纳米线P=300 nm, H=6 μm, FR= 0.349 条件下其吸收效率高达32.4%, 进一步提高其高度吸收效率变化不再明显. 此外, 本文还分析了非周期性硅纳米线阵列的光学性质, 与周期性硅纳米线阵列相比, 直径随机分布和位置随机分布的硅纳米线阵列都可以使吸收效率进一步提高, 相比于周期性硅纳米线阵列, 优化后直径随机分布的硅纳米线阵列吸收效率提高了39%, 吸收效率为27.8%. 本文运用FDTD法对硅纳米线阵列的光学特性进行设计与优化, 为硅纳米线阵列在太阳电池中的应用提供了理论支持.     

Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells

Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.     

Enhanced optical absorption by Ag nanoparticles in a thin film Si solar cell

Thin film solar cells have the potential to significantly reduce the cost of photovoltaics. Light trapping is crucial to such a thin film silicon solar cell because of a low absorption coefficient due to its indirect band gap. In this paper, we investigate the suitability of surface plasmon resonance Ag nanoparticles for enhancing optical absorption in the thin film solar cell. For evaluating the transmittance capability of Ag nanoparticles and the conventional antireflection film, an enhanced transmittance factor is introduced. We find that under the solar spectrum AM1.5, the transmittance of Ag nanoparticles with radius over 160 nm is equivalent to that of conventional textured antireflection film, and its effect is better than that of the planar antireflection film. The influence of the surrounding medium is also discussed.     

Characteraction of Ag-doped ZnO thin film synthesized by sol–gel method and its using in thin film solar cells

Pure 2% and 4% Ag-doped ZnO thin films have been synthesized on glass substrates by sol–gel method. The structure, morphology and optical properties of the samples have been studied by X-ray diffractometer (XRD), scanning probe microscope, UV–vis spectrophotometer, respectively. The XRD result shows that the pure ZnO has a wurtzite hexagonal structure, no phase segregation is observed. The surface morphology of pure ZnO thin film shows that the grains are growing preferentially along the c-axis orientation perpendicular to the substrates. The transmittance spectra reveal that all samples have high transmittance above 90% in visible region. With Ag doping content increase, a red shift is observed. The performance of Ag-doped ZnO films using in thin film solar cells are simulated. The results show that 4% Ag-doped ZnO thin film can greatly improve the absorption of the cells. Compare to pure ZnO, solar cell's energy conversion efficiency improvement of 2.47% is obtained with 4% Ag doped ZnO thin film.