左手材料的反射特性与负折射率行为

利用平板波导法研究了不同入射角度下周期排列开口谐振环负磁导率材料、周期排列金属杆负介电常数材料以及左手材料微波反射特性，并利用劈尖法研究了左手材料的负折射特性.实验结果表明：负磁导率材料反射率曲线形成反射峰，其对应的反射峰频率与材料的谐振频率一致；负介电常数材料反射率接近0dB；左手材料出现单个反射较小的反射峰，其峰值反射率随入射角度的增大而变大，即反射能力增强，且反射峰与透射峰有相对频移.劈尖法测量还表明，左手材料在9800MHz频率附近出现负折射现象，其折射率n为-0.796. 关键词： 左手材料 反射 负折射率     

晶格常数对左手材料的能量透射率及负折射率的影响

研究晶格常数对左手材料的能量透射率、负折射率以及品质因素(FOM)的影响.结果表明,随着晶格常数的减小,左手材料的低阶透射峰出现异常增大,其物理机制为阻抗匹配;左手材料的负折射的中心频率随着晶格常数的减小而蓝移,与理论结果基本一致;晶格常数对左手材料的FOM有重要的影响,当晶格常数减小到一定值时,可以实现完美阻抗匹配,从而得到较高的FOM.     

线偏振光在手征负折射材料表面的传输特性研究

从理论上研究了手征负折射材料表面的反射与透射特性,给出了归一化的反射透射功率与入射角之间的关系曲线.当入射波分别为垂直和平行极化波(TE和TM波)时,得到了发生负折射时的布儒斯特角和全内反射角随手征参数和材料折射率的变化关系.手征负折射介质中的一个本征波发生了负折射,其功率流方向与波矢方向相反.     

色散负折射特异介质的1维光子晶体缺陷态

在1维光子晶体中引入色散负折射特异介质,分析了其介电常数和磁导率在微波区（1～10 GHz）与频率的关系。分别对以色散负折射介质为缺陷的正折射率介质光子晶体及以正折射率介质为缺陷的正负折射率介质光子晶体进行了数值仿真,得出了均匀平面电磁波在正入射和斜入射时的透射谱。结果表明:在介电常数和磁导率均为负值的不同禁带中,分别出现了单、双缺陷模。利用透射谱的这一特点,可实现单、双通道滤波。     

同时实现介电常数和磁导率为负的H型结构单元左手材料

基于用一种结构同时实现材料介电常数和磁导率为负的思想，提出了H型结构单元左手材料模型.采用矩形波导法测试表明，H型结构单元在微波频率范围出现左手透射峰，并且可以由参数t对左手特性区域进行调控.同时利用相位法、棱镜折射法和散射参量法从实验和理论证明了在左手透射峰区域材料的折射率为负值，介电常数和磁导率亦同时为负.相对由金属开口谐振环与金属线两种结构组合实现的左手材料，H型结构集磁谐振与电谐振于一体，结构简单、制备方便，对微波器件左手材料表现出更多的优越性.     

基于硅柱-磁性液体体系的光子晶体的可调谐负折射特性研究

本文研究了硅柱在MnFe₂O₄磁性液体背景中排列成六边形结构的二维光子晶体的可调谐负折射特性. 利用平面波展开法和时域有限差分法理论研究了硅柱-磁性液体体系二维光子晶体的带隙结构、等频曲线和负折射现象随外磁场强度的变化关系. 模拟结果表明, 硅柱-磁性液体体系二维光子晶体工作在TE模式时, 其负折射特性可由外磁场调节. 在固定背景溶液的磁性颗粒体积分数和入射光频率时, 所研究的折射光束的偏转角和光子晶体的负折射率绝对值随外磁场的增大而增大, 而在固定背景溶液的磁性颗粒体积分数和外磁场强度时, 负折射角和负折射率的绝对值随入射光归一化频率增大而减小. 固定外场强度和入射光频率时, 所研究结构的负折射特性随背景溶液的磁性颗粒体积分数增大而变弱.     

负折射率介质测试装置设计与测试

为深人了解负折射率媒质的奇异传输特性,基于斯涅耳折射原理,设计并加工了一种用于测试X波段((8.2-12.4GHz),以亚铁磁材料为基体,内嵌金属线阵列宏结构的负折射率介质样品折射特性的实验装置.分别测试了楔形石蜡样品和楔形负折射率介质样品在波段的折射特性,对石蜡样品测试结果的分析证明了该折射特性测试装置的有效性,对负...     

负折射率材料透镜的消色差

以工作在近红外波段0.848 μm～1.114μm,焦距100 mm,入瞳直径20 mm,具有负阿贝数的负折射率平凹透镜为例,介绍了两种对该类负折射率透镜的消色差设计方法,即利用正折射率材料透镜与负折射率材料透镜组合消色差和负折射率透镜中引入衍射光学元件实现折衍射混合透镜消色差方法.结果表明,正负折射率材料透镜组合消色差方法中正折射率材料透镜承担几乎全部光焦度,进而引入大量额外单色像差,但利用衍射光学元件可以在不引入额外像差的同时实现负折射率透镜的消色差.根据负折射率材料在介质与空气分界面的特殊折射特性,推导了以负折射率为基底的衍射光学元件的衍射效率公式,得到衍射微结构高度公式,求出不同波长处的衍射效率值.负折射率二元衍射光学元件在设计波长0.912 μm处衍射效率为40.53％,在波长0.848 μm处的衍射效率为35.06％,在波长1.114 μm处的衍射效率值为39.83％.     

光波段多频负折射率超材料

从光波段圆孔形双鱼网结构的负折射材料模型出发,采用基于有限积分技术的CST软件系统研究了原胞结构的改变对负折射行为的影响.数值仿真结果表明,对原胞结构做微小调节也可获得负折射率频带的增大效应.将双鱼网结构改为阶梯形孔洞和半球形孔洞结构,可以在更多的频段里出现负折射率,并且谐振频率发生了一定的红移.半球形孔洞的双鱼网结构可以方便地用化学模板法制备,这为从实验上实现红外及可见光波段的多频负折射材料提供了一种简单可行的方法. 关键词： 负折射率 多频段 双鱼网结构     

一种新型左手材料的设计和特性研究

通过对左手材料的理论分析,设计了一种宽频带左手材料结构单元.该结构单元由一个矩形闭合环和十字型结构构成的谐振器和金属线组合而成.这种新结构中的谐振器实现负磁导率,金属线实现负介电常量,经过合理的设计,可以在某一频段内使得磁导率和介电常量同时为负,即具有负的有效折射率和正的波阻抗.数值仿真结果表明:在其工作频段内存在一个通带并且在17.6～29.0GHz频率范围内折射率实部为负,而虚部接近于零;同时在该频率范围内波阻抗实部大于零,从而说明了该左手材料具有左手特性.除此之外,相对左手带宽达到48.9%,远远优于传统的左手材料.     

Fermat原理在左手媒质中的推广

 在考虑左、右手媒质定义对比基础上，定义了广义折射率，并对Fermat原理的表述进行了推广。从电磁理论出发，得到了折射率的具体表示。广义的折射率可以通过媒质电参数有效地表现理想及人工复合左、右手媒质中折射的负正特性。以此所得理论可以有效描述由左、右手媒质所共同构成的折射率可变的混合稳态电磁或光学传输系统。讨论了折射率的高频形式，并对负折射现象进行了讨论。     

二维负磁导率材料中的缺陷效应

研究了以金属铜六边形开口谐振环为基元的二维负磁导率材料的缺陷效应.利用电路板刻蚀 技术制备了二维负磁导率材料样品.采用波导法测量了点缺陷和线缺陷对二维负磁导率材料X 波段(8—12GHz)微波透射行为的影响.实验发现，无缺陷的二维负磁导率材料样品存在一个 谐振频率，在稍大于该谐振频率的极窄区域内表现为负磁导率.点缺陷和线缺陷SRR的引入导 致材料主谐振峰的强度下降、谐振频率发生移动，品质因数Q显著下降.缺陷的存在破坏 了材料的周期性结构，从而引起其谐振峰的谐振强度和谐振频率发生变化.缺陷效应的研究 不 关键词： 负磁导率 缺陷效应 开口谐振环     

非线性介质表面缺陷对激光光场的调制

以高斯光束为例,研究了非线性介质表面振幅调制型缺陷对光场的调制。基于广义惠更斯-菲涅尔衍射积分并采用泰勒级数展开方法,建立了高斯光束经过表面存在缺陷的非线性介质后的传输模型,得到了受缺陷调制光束经非线性介质后的光强分布解析式,研究了缺陷尺寸和光束在非线性介质中产生的附加相移大小对光强分布的影响,结果表明介质表面的缺陷尺寸越大,介质内产生的附加相移越大,光场受到的调制越严重。分别考虑了非线性折射率为正值和为负值的情况,研究发现相应的折射率值导致光束发生会聚或发散现象,并由于缺陷调制的作用,在光束传输过程中始终存在一光强极值点,且随着附加相移绝对值的增大光强极值点的峰值也随之增强。     

Structural change of radiation defects in graphite crystals induced by STM probing

It was found that STM (scanning tunneling microscopy) images of defects in highly oriented pyrolytic graphite introduced by bombardment of 400 eV Ar⁺ ions in ultra-high vacuum exhibit substantial changes in the course of STM probing. Detailed examination of abrupt changes in the tunneling current measured at defect sites during voltage scans shows that the primary cause of the defect-image change was found to be neither the injected current nor the injected power but the absolute value of the voltage applied between the probe tip and the sample. We propose that an electric polarization induced force attracting the sample surface toward the probe tip widens the layer spacing of the graphite surface, leading to an acceleration of the lateral diffusion of interstitial atoms introduced by the ion irradiation, which results in a change in the defect structures and the accompanying electronic structures sensible in the STMimaging. Received: 14 June 2001 / Accepted: 7 September 2001 / Published online: 20 December 2001     

Flat superlens by using negative refraction in two-dimensional phononic crystals

We experimentally and theoretically demonstrated a flat superlens by negative refraction imaging for acoustic waves in a two-dimensional phononic crystal. The sample consists of a square array of steel cylinders immersed in water. The dispersion surfaces at the first band for this sample are nearly circular around point M in the first Brillouin zone, which makes the index of the negative refraction for the phononic crystal sample be well defined for all angles of incidence. Both the observed negative refraction behavior and imaging effect are in excellent agreement with numerical simulations by the Multiple Scattering Theory method.     

Subwavelength resolution in a two-dimensional photonic-crystal-based superlens

We experimentally and theoretically demonstrate single-beam negative refraction and superlensing in the valence band of a two-dimensional photonic crystal operating in the microwave regime. By measuring the refracted electromagnetic waves from a slab shaped photonic crystal, we find a refractive index of -1.94 that is very close to the theoretical value of -2.06. A scanning transmission measurement technique is used to measure the spatial power distribution of the focused electromagnetic waves that radiate from a point source. The full width at half maximum of the focused beam is measured to be 0.21 lambda, which is in good agreement with the finite difference time domain method simulations. We also report a subwavelength resolution for the image of two incoherent point sources, which are separated by a distance of lambda/3.     

Defect solitons supported by parity-time symmetric defects in superlattices

The existence and stability of defect solitons supported by parity-time (PT) symmetric defects in superlattices are investigated. In the semi-infinite gap, in-phase solitons are found to exist stably for positive defects, zero defects, and negative defects. In the first gap, out-of-phase solitons are stable for positive defects or zero defects, whereas in-phase solitons are stable for negative defects. For both the in-phase and out-of-phase solitons with the positive defect and in-phase solitons with negative defect in the first gap, there exists a cutoff point of the propagation constant below which the defect solitons vanish. The value of the cutoff point depends on the depth of defect and the imaginary parts of the PT symmetric defect potentials. The influence of the imaginary part of the PT symmetric defect potentials on soliton stability is revealed.     

Anomalous behavior of group velocity and index of refraction in a defect photonic band gap structure

In the present paper, we have made an analysis to observe the effect of introduction of defect on dispersion relation, group velocity, and effective group index in a conventional photonic band gap (PBG) structure. The study shows that inside the PBG materials group velocity and effective group index becomes negative in both types (conventional as well as defect PBG structure) of structure at a certain range of frequencies. Also, near the edges of the bands it attains very high values of index of refraction. A defect PBG structure gives a very unique feature that group velocity becomes exactly zero at a particular value of frequency and also becomes several hundred times greater than the velocity of light which is not attainable with the conventional PBG structure. Defect PBG structures with such peculiar characteristics are seen in lasing without inversion, in construction of perfect lens, in trapping of photon and other optical devices.